• 대한기계학회논문집
• /
• 제13권1호
• /
• pp.96-104
• /
• 1989

본 연구에서는 AE법에 의해 J$_{IC}$를 결정하는 것은 Takahashi등의 방법을 따르되 AE 실험결과를 토대로 이론을 전개하여 재료의 물성 곡선인 J-R곡선의 실험식과 재료 찢어짐 계수를 계산할 수 있는 실험식을 유도하며, 이렇게 구한 실험식을 불안정 파괴 조건에 적용하여 그 타당성을 검토한다.다.

• 대한두개안면성형외과학회지
• /
• 제20권2호
• /
• pp.130-133
• /
• 2019

Ehlers-Danlos syndrome (EDS) is an inherited disorder of collagen biosynthesis and structure, characterized by skin hyperextensibility, joint hypermobility, aberrant scars, and tissue friability. Besides the skin, skeleton (joint) and vessels, other organs such as the eyes and the intestine can be affected in this syndrome. Accordingly, interdisciplinary cooperation is necessary for a successful treatment. Three basic surgical problems are arising due to an EDS: decreased the strength of the tissue causes making the wound dehiscence, increased bleeding tendency due to the blood vessel fragility, and delayed wound healing period. Surgery patients with an EDS require an experienced surgeon in treating EDS patients; the treatment process requires careful tissue handling and a long postoperative care. A surgeon should also recognize whether the patient shows a resistance to local anesthetics and a high risk of hematoma formation. This report describes a patient with a wide open wound on the foot dorsum and delayed wound healing after the primary approximation of the wound margins.

• Carbon letters
• /
• 제23권
• /
• pp.1-8
• /
• 2017

Polycrystalline diamond (PCD) tools possessing high hardness and abrasive wear resistance are particularly suited for drilling of carbon fiber reinforced plastic (CFRP) composites, where tool life and consistent hole quality are important. While PCD presents superior performance when drilling CFRP, it is unclear how it performs when drilling multi-stack materials such as CFRP-titanium (Ti) stacks. This comparative study aims to investigate drilling of a Ti plate stacked on a CFRP panel when using PCD tools. The first sequence of the drilling experiments was to drill 20 holes in CFRP only. CFRP-Ti stacks were then drilled for the next 20 holes with the same drill bit. CFRP holes and CFRP-Ti stack holes were evaluated in terms of machined hole quality. The main tool wear mechanism of PCD drills is micro-fractures that occur when machining the Ti plate of the stack. Tool wear increases the instability and the operation temperature when machining the Ti plate. This results in high drilling forces, large hole diameter errors, high surface roughness, wider CFRP exit thermal damage, and taller exit Ti burrs.

• 한국세라믹학회지
• /
• 제35권10호
• /
• pp.1061-1069
• /
• 1998

The thermal instability of Al2TiO5 Ceramics was contrlled by solid solution with MgO SiO2 and ZrO2 through electrofusion in an arc furnace. The thermal expansion properties of Al2TiO5 composites show the hysteresis due to the strong anisotropy of The crystal axes of these material. These phenomena are ex-plained by the opening and closing of microcracks. The difference in microcracking temperatures e.g 587.6(ATG2), 405.9(ATG3) and 519.7$^{\circ}C$(ATG4) is caused by the difference in grain size and stabilizer type. The thermal shock behaviour under cyclic conditions between 750-1400-75$0^{\circ}C$ show no change in mi-crostructure and phase assemblage for all three stabilized specimens. After the thermal loading test at 110$0^{\circ}C$ for 100hrs. ATG1 and ATG2 materials decomposes completely to its components corundum and ru-tile in both cases. However with approximatelly 20% retention of the Al2TiO5 Thus in order to prevent decomposition of the stabilized material in the critical temperature range 800-130$0^{\circ}C$ it must be traversed within a short period of time.

• 한국정밀공학회지
• /
• 제19권9호
• /
• pp.98-105
• /
• 2002

Some materials exhibit a rising K-R curve, while the K-R curve for other materials is flat. The shape of the K-R curve depends on material behavior and, to a lesser extent, on the configuration of the cracked structure. The K-R curve for an ideally brittle material is flat because the surface energy is an invariant material property. However, the K-R curve can take on a variety of shapes when nonlinear material behavior accompanies fracture. Five different hot-rolled thin plates are tested to investigate K-R curve behavior. A special experimental apparatus is used to prevent specimens from buckling.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2002년도 하계학술대회 논문집
• /
• pp.288-291
• /
• 2002

Application of metal silicides such as TiSi$_2$ and CoSi$_2$ as contacts and gate electrodes are being studied. However, TiSi$_2$ due to the linewidth-dependance, and CoSi$_2$ due to the excessive Si consumption during silicidation cannot be applied to the deep-submicron MOSFET device. NiSi shows no such problems and can be formed at the low temperature. But, NiSi shows thermal instability. In this investigation, NiSi was formed with a Ti-capping layer to improve the thermal stability. Ni and Ti films were deposited by the thermal evaporator. The samples were then annealed in the N$_2$ ambient at 300-800$^{\circ}C$ in a RTA (rapid thermal annealing) system. Four point probe, FESEM, and AES were used to study the thermal properties of Ti-capped NiSi layers. The Ti-capped NiSi was stable up to 700$^{\circ}C$ for 100 sec. RTA, while the uncapped NiSi layers showed high sheet resistance after 600$^{\circ}C$. The AES results revealed that the Ni diffusion further into the Si substrate was retarded by the capping layer, resulting in the suppression of agglomeration of NiSi films.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.276-276
• /
• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
• /
• pp.433-433
• /
• 2013

Graphene, $sp^2$-hybridized 2-Dimension carbon material, has drawn enormous attention due to its desirable performance of excellent properties. Graphene can be applied for many electronic devices such as field-effect transistors (FETs), touch screen, solar cells. Furthermore, indium tin oxide (ITO) is commercially used and sets the standard for transparent electrode. However, ITO has certain limitations, such as increasing cost due to indium scarcity, instability in acid and basic environments, high surface roughness and brittle. Due to those reasons, graphene will be a perfect substitute as a transparent electrode. We report the graphene synthesized by inductive coupled plasma enhanced chemical vapor deposition (ICP-PECVD) process on Cu substrate. The growth was carried out using low temperature at $400^{\circ}C$ rather than typical chemical vapor deposition (CVD) process at $1,000^{\circ}C$ The low-temperature process has advantage of low cost and also low melting point materials will be available to synthesize graphene as substrate, but the drawback is low quality. To improve the quality, the factor affect the quality of graphene was be investigated by changing the plasma power, the flow rate of precursors, the scenario of precursors. Then, graphene film's quality was investigated with Raman spectroscopy and sheet resistance and optical emission spectroscopy.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.155-155
• /
• 2010

Oxygen incorporated $Ge_2Sb_2Te_5$ (GST) films were prepared by an ion beam sputtering deposition (IBSD) method. From the I-V curves, the $V_{th}$ value varies with the oxygen content. Ge-deficient hexagonal phases are responsible for the observed unstability and decrease in $V_h$ values. In the case of a GST film with an elevated oxygen content of 30.8 %, the GST layer melted at 9.02 V due to the instability conferred by the high oxygen content. The formation of Ge-deficient hexagonal phases such as $GeSb_2Te_4$ and $Sb_2Te_3$ appear to be responsible for the $V_{th}$ variation. Impedance analyses indicated that the resistance in GST films with oxygen contentsof 16.7 % and 21.7 % had different origins. Thermal desorption spectroscopy (TDS)data indicate that moisture and hydrocarbons were more readily desorbed at higher oxygen content because the oxygen incorporated GST films are more hydrophilic than undoped GST films.

• 한국강구조학회 논문집
• /
• 제10권4호통권37호
• /
• pp.677-689
• /
• 1998

본 연구에서는 중심압축력을 받는 스털스터드의 설계강도에 대하여 다루었으며 비교 평가하였다. 미국규준인 냉간성형 LRFD 설계규준 (AISI). 유럽의 냉간박벽부재설계규준 (EC3 part 1.3) 및 독일의 관련규정 (DASt-Richtlinie 016)의 유사성과 차이점을 소개하고 분석하며 체계적으로 평가하였다. 특히 유효폭과 전체 안정성문제 (휨좌굴과 비틀림좌굴)가 이 논문에서 내포되어 있다. 또한 예제를 통하여 두 규준인 AISI와 EC3에 의한 설계압축강도를 산정하고 비교 분석하였다.