• 대한전자공학회논문지SD
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• 제40권9호
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• pp.651-657
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• 2003

얇은 중간 금속층을 가지는 측면 연마 광섬유 결합기를 이용한 편광분리기를 구현하였다. 실험 결과는 적절한 두께론 가지는 중간 금속층은 두 측면 연마된 광섬유 사이에서 TE 편광 성분의 광결합은 차단시키는 반면 TM 편광성분의 광결합은 허용함을 보여주었다. 측면 연마 광섬유를 이용한 편광분리기 설계 및 제작 기법을 기술하였다. 제작된 편광분리기는 TE와 TM 편광에 대하여 18dB와 23dB의 분리비를 보였다. 삽입손실은 TE 편광의 경우 0.7dB, TM 편광의 경우 1.3dB로 측정되었다.

• Applied Science and Convergence Technology
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• 제23권6호
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• pp.351-356
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• 2014

The electronic structure at organic-organic interface gives essential information on device performance such as charge transport and mobility. Especially, the molecular orientation of organic material can affect the electronic structure at interface and ultimately the device performance in organic photovoltaics. The molecular orientation is examined by the change in ionization potential (IP) for metal phthalocyanines (MPc, M=Zn, Cu)/fullerene ($C_{60}$) interfaces on ITO by adding the CuI templating layer through ultraviolet photoelectron spectroscopy measurement. On CuPc/$C_{60}$ bilayer, the addition of CuI templating layer represents the noticeable change in IP, while it hardly affects the electronic structure of ZnPc/$C_{60}$ bilayer. The CuPc molecules on CuI represent relatively lying down orientation with intermolecular ${\pi}-{\pi}$ overlap being aligned in vertical direction. Consequently, in organic photovoltaics consisting of CuPc and $C_{60}$ as donor and acceptor, respectively, the carrier transport along the direction is enhanced by the insertion of CuI templaing layer. In addition, optical absorption in CuPc molecules is increased due to aligned transition matrix elements. Overall the lying down orientation of CuPc on CuI will improve photovoltaic efficiency.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.318-319
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• 2008

In this article, magnetic properties of multiferroic bi-layer $BiFeO_3$ (BFO)/$BaTiO_3$ (BTO) thin films were studied. It was found that the magnetization increased by the insertion of BTO buffer layer even though the interfacial stress was slightly relaxed, which indicated a coupling between the ferroelectric and ferromagnetic orders. Furthermore, with slightly increase of BFO film thickness, both BFO and BFO/BTO bi-layer films showed anisotropic magnetic properties with higher in-plane magnetization than the values measured out-of-plane. These are attributable to strain constraint effect at the interface.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 춘계학술대회 논문집 센서 박막재료 반도체재료 기술교육
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• pp.111-118
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• 2002

A new lithium niobate optical modulator with a polymer buffer layer on Ni in-diffused optical waveguide is proposed for the fist time, successfully fabricated and examined at a wavelength of 1.3 mm. By determining the diffusion parameters of Ni in-diffused waveguide to achieve more desirable mode size which is well matched to the mode in the fiber, the detailed results on the achievement of high optical throughput are reported. In addition, the usefulness of polymer buffer layer which can be applicable to a buffer layer in Ni in-diffused waveguide devices is demonstrated. Several sets of channel waveguides fabricated on Z-cut lithium niobate by Ni in-diffusion were obtained and on which coplanar traveling-wave type electrodes with a polymer-employed buffer layer were developed by a conventional fabrication method for characterizing of electro-optical performances of the proposed device. The experimental results show that the measured half-wave voltage is of ~10 V and the total measured fiber-to-fiber insertion loss is of ~6.4 dB for a 40 mm long at a wavelength of =1.3 mm, respectively. From the experimental results, it is confirmed that the polymer-employed buffer layer in LiNbO3 optical modulator can be a substitute material instead of silicon oxide layer which is usually processed at a high temperature of over $300^{\circ}C$. Moreover, the fabrication tolerances by using polymer materials in LiNbO3 optical modulators are much less strict in comparison to the case of dielectric buffer layer.

• 한국음향학회:학술대회논문집
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• 한국음향학회 1985년도 학술발표회 논문집
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• pp.23-26
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• 1985

압전형 초음파 변화자의 특성을 압전체, matching layer, backing, 매질, tuning 및 구동 회로를 고려하여 해석하였다. 압전체는 KLM 모델을 이용하였고 모델변수를 실험적으로 추정하여 시뮬레이션에 대입하였다. 실험적인 RTIL(Round Trip Insertion Loss)은 면반사(plane reflection)에 대한 pulse-echo를 측정하여 계산되었으며, 이론치와 비교할 때 6-dB 주파수 대역내에서 2-dB 이하의 오차가 관찰되었다.

• 한국자기학회:학술대회 개요집
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• 한국자기학회 2014년도 임시총회 및 하계학술연구발표회
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• pp.115-115
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• 2014

• Journal of electromagnetic engineering and science
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• 제10권1호
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• pp.1-5
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• 2010

A spurious suppressed bandpass filter is proposed and discussed using the stepped impedance resonator(SIR) on a substrate-integrated waveguide(SIW) structure with a double-layer substrate. The second resonance of the fundamental $TE_{10}$ mode can be controlled by adjusting the electrical length and impedance ratio of each SIR. The spurious suppressed SIW bandpass filter shows the measurement results of the insertion loss of 3.98 dB and return loss of less than 11.58 dB at the center frequency of 12 GHz. Also, the second spurious frequency is improved to about $1.5f_0$ compared with $1.33f_0$.

• 한국전기전자재료학회논문지
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• 제22권11호
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• pp.905-909
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• 2009

The new Junction Field Effect Transistors (JFETs) with Silicon-germanium (SiGe) layers is investigated. This structure uses SiGe layer to prevent out diffusion of boron in the channel region. In this paper, we report electrical properties of SiGe JFET measured under various design parameters influencing the performance of the device. Simulation results show that out diffusion of boron is reduced by the insertion SiGe layers. Because the SiGe layer acts as a barrier to prevent the spread of boron. This proposed JFET, regardless of changes in fabrication processes, accurate and stable cutoff voltage can be controlled. It is easy to maintain certain electrical characteristics to improve the yield of JFET devices.

• JSTS:Journal of Semiconductor Technology and Science
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• 제2권4호
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• pp.295-301
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• 2002

In this paper, solenoid-type 3-D passives (inductors and transformers) have been designed, fabricated, and characterized by using electroplating techniques, wire bonding techniques, multi-layer thick photoresist, and low temperature processes which are compatible with semiconductor circuitry fabrication. Two different fabrication approaches are performed to develop the solenoid-type 3-D passives and relationship of performance characteristics and geometry is also deeply investigated such as windings, cross-sectional area of core, spacing between windings, and turn ratio. Fully integrated inductor has a quality factor of 31 at 6 GHz, an inductance of 2.7 nH, and a self resonant frequency of 15.8 GHz. Bonded wire inductor has a quality factor of 120, an inductance of 20 nH, and a self resonant frequency of 8 GHz. Integrated transformers with turn ratios of 1:1 and n:l have the minimum insertion loss of about 0.6 dB and the wide bandwidth of a few GHz.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1408-1409
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• 2005

Organic light-emitting diodes (OLEDs) of metalsemiconductor-metal (MSM) structure have been fabricated by using m-MTDATA [4,4',4"-tris (3-methylphenylphenylamino) triphenylamine] as a hole-injection layer (HIL). The m-MTDATA is shown to be an effective hole-injecting material for the OLED, in that the insertion of m-MTDATA greatly reduces the roughness of anode surface and improves the device performance.