• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.17.1-17.1
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• 2011

Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as a type of implantable LED biosensor and as a therapy tool.

• Macromolecular Research
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• v.13 no.2
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• pp.96-101
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• 2005

Thin-film humidity sensors were prepared using inorganic/organic hybrid polyelectrolytes, which were prepared from the sol-gel reaction of copolymers of [2-(methacryloyloxy)ethyl]dimethylpropylammonium bromide (MEPAB), n-butyl methacrylate (BMA), and 3-(trimethoxysilyl)propyl methacrylate (TSPM) with tetraethyl ortho-silicate (TEOS). The humidity-sensitive polyelectrolytes were composed of the copolymers having the following mole ratios of MEPAB, BMA, and TSPM: 60/30/10, 55/30/15, and 50/30/20. We found that the impedance varied with the content of MEPAB or TEOS; it ranged from $10^{7} to 10^{3}\Omega$ between 20 and $95\%$ relative humidity, which is the range required for a humidity sensor operating at ambient humidity. In addition we investigated a number of characteristics of these humidity sensors, such as their hysteresis, response time, temperature dependence, frequency dependence, water durability, and long-term stability.

• Journal of Magnetics
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• v.17 no.4
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• pp.261-264
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• 2012

Interfacial properties of 5 nm MgO(001)/7 nm Fe(001)/1.8 nm MgO(001)/t nm Cu-phthalocyanine (CuPc) hybrid multilayers with t = 0, 1, 7, and 10 were investigated by using x-ray photoemission spectroscopy (XPS). Rather sharp interfacial properties were observed in the CuPc films grown on an epitaxial MgO/Fe/MgO(001) trilayer than a MgO/Fe(001) bilayer. This work suggests a new way to improve device performance of organic spintronic devices by utilizing an artificially grown MgO(001) thin layer.

• Proceedings of the Korean Vacuum Society Conference
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• 2005.08a
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• pp.67-67
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• 2005

• Journal of the Korean Vacuum Society
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• v.7 no.s1
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• pp.30-36
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• 1998

The plasma-spray technique is currently the most frequently used method to produce calcium phosphate coatings. Hydroxyapatite(HAp), one form of calcium phosphate, is preferred by its ability to form a direct bond with living bone, resulting in improvements of implant fixation and faster bone healing. Recently, concerns have been raised regarding the viable use and long-term stability of plasma-spray HAp coatings due to its nature of comparatively thick, porous, and poor bonding strength to metal implants. Thin layers (maximum of few microns) of calcium phosphate were formed by an e-beam evaporation with and without ion bombardments. The Ca/P ration of film was controlled by either using the evaporants having the different ration of Ca/P with addition of CaO, or adjusting the ion beam assist current. The Ca/P ration had great effects on the structure formation after heat treatment and the dissolution bahavior. The calcium phosphate films produced by IBAD exhibited high adhesion strength.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.416-416
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• 2016

Organic-inorganic metal halide perovskite solar cells have received attention because it has a number of advantages with excellent light harvesting, high carrier mobility, and facile solution processability and also recorded recently power conversion efficiency (PCEs) of over 20%. The major issue on perovskite solar cells have been reached the limit of small area laboratory scale devices produced using fabrication techniques such as spin coating and physical vapor deposition which are incompatible with low-cost and large area fabrication of perovskite solar cells using printing and coating techniques. To solution these problems, we have investigated the feasibility of achieving fully printable perovskite solar cells by the blade-coating technique. The blade-coating fabrication has been widely used to fabricate organic solar cells (OSCs) and is proven to be a simple, environment-friendly, and low-cost method for the solution-processed photovoltaic. Moreover, the film morphology control in the blade-coating method is much easier than the spray coating and roll-to-roll printing; high-quality photoactive layers with controllable thickness can be performed by using a precisely polished blade with low surface roughness and coating gap control between blade and coating substrate[1]. In order to fabricate perovskite devices with good efficiency, one of the main factors in printed electronic processing is the fabrication of thin films with controlled morphology, high surface coverage and minimum pinholes for high performance, printed thin film perovskite solar cells. Charge dissociation efficiency, charge transport and diffusion length of charge species are dependent on the crystallinity of the film [2]. We fabricated the printed perovskite solar cells with large area and flexible by the bar-coating. The morphology of printed film could be closely related with the condition of the bar-coating technique such as coating speed, concentration and amount of solution, drying condition, and suitable film thickness was also studied by using the optical analysis with SEM. Electrical performance of printed devices is gives hysteresis and efficiency distribution.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.36-36
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• 2010

Currently, there are several newly developed energy resources for the future to replace petroleum resources such as hydrogen fuel cell, solar cell, wind power, and etc. Among them, solar cell has attracted a worldwide concern, because it has an enormous amount of resources. In general, a study of solar cells can be classified in to an area of bulk type and thin-film type. Inorganic solar cells based on silicon have been tremendously developed in technology and efficiency. However, since there are many lithographic steps, high processing temperature approximately $1000^{\circ}C$, and expensive raw materials, a manufacturing cost of device are nearly reaching a limit. Contrary to those disadvantages, organic solar cells can be manufactured at room temperature. Also, it has many advantages such as a low cost, easy fabrication of thin film, and possible manufacture to a large size. Because it can be made to be flexible, research and development on solar cells are actively in progress for the next generation. ever though an efficiency of the organic solar cell is low compared to that of inorganic one, a continuous study is needed. In this paper, we report optimal device structure obtained by a program simulation for design and development of highly efficient organic photovoltaic cells. we have also compared simulated results to experimental ones.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.300-300
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• 2008

In this study, the advanced DuoPIGatron-type ion beam (IB) system was applied to inorganic thin film for aligning liquid crystal (LC). LC alignment on $Ta_2O_5$ via IB irradiation was embodied. As a result of IB irradiation, the homogeneously aligned liquid crystal display (LCD) on $Ta_2O_5$ was observed with low pretilt angles. The $Ta_2O_5$ were deposited on indium-tin-oxide coated Coming 1737 glass substrates by rf magnetron sputtering at $200^{\circ}C$. The deposition process resulted in forming very uniform thin film on glass substrates without any defects. To confirm the application of the inorganic alignment on modem display optical devices, we fabricated twisted nematic LCD and measured optical property and response time. As a result of the experiment, the electro optical characteristics of the LCD fabricated by using IB irradiation on $Ta_2O_5$ alignment layer were similar with the other LCD fabricated by using rubbing process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.

• Korean Journal of Materials Research
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• v.4 no.6
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• pp.662-668
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• 1994

The physical and electrical characteristics of sub-l0nm thick capacitor dielectrics formed by wet oxidation of silicon nitride(oxide/nitride composite) and by removing the top oxide of oxidized silicon nitride(0xynitride) are described. For the capacitors with an oxide/nitride composite layer, the capacitance decreases sharply, but the breakdown field increases with an increase in the wet oxidation time at $900^{\circ}C$. For the capacitors with oxynitride layers, the values of both the capacitance and the breakdown field increase with increasing wet oxidation time. The reduction of effective thickness and the improved quality of oxynitride film are responsible for the improved capacitance and increased breakdown fields, respectively. In addition, intrinsic TDDB characteristics and early breakdown failure rate of oxynitride film are improved with increasing oxidation time. Consequently, the oxynitride film is suitable for dynamic memories as a thin dielectric film.