• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.350-354
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• 2009

In this work, polymer - inorganic composites have prepared using polymer such as polyethylene glycol (PEG)/poly (methyl methacrylate, PMMA) and inorganic nanofillers materials such as TiO2 nanotubes (TiNTs)/carbon nanotubes (CNTs). The extensive structural, morphological and ionic properties revealed that the high surface area and tubular feature of nanofillers improved the interaction and cross-linking to polymer matrix which is significantly enhanced the ionic conductivity and electrical properties of composite electrolytes. Comparably high conversion efficiency ~4.5% has been observed by using the newly prepared PEG-TiNTs composite solid electrolyte as compared with PMMA-CNTs electrolyte based DSSCs (~3%). The detailed comparative properties would be discussed in term of their structural, morphology, ionic and photovoltaic properties.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.3
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• pp.241-252
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• 2024

With the recent development of emerging technologies, information acquisition and delivery between users has been actively conducted, and inorganic thin film transfer technology that effectively transfers various materials and devices is being studied to develop flexible electronic devices accordingly. This is aimed at innovative structural changes and functional improvement of electronic devices in the era of the Internet of Things (IoT). In particular, advanced technologies such as microLEDs are used to realize high-resolution flexible displays, and the possibility of heterogeneous integrated technologies can be presented by precisely transferring materials to substrates through various transfer process. This paper introduced physical, chemical, and self-assembly transfer methods based on inorganic thin film materials to implement heterogeneous integrated flexible semiconductor systems and introduces the results of application studies of semiconductor devices obtained through different transfer technologies. These studies are expected to bring about innovative changes in the field of smart devices, medical technology, and user interfaces in the future.

• Journal of Semiconductor Engineering
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• v.1 no.1
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• pp.46-56
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• 2020

This article highlights new opportunities of inorganic semiconductor materials for bio-implantable electronics, as a subset of 'transient' technology defined by an ability to physically dissolve, chemically degrade, or disintegrate in a controlled manner. Concepts of foundational materials for this area of technology with historical background start with the dissolution chemistry and reaction kinetics associated with hydrolysis of nanoscale silicon surface as a function of temperature and pH level. The following section covers biocompatibility of silicon, including related other semiconductor materials. Recent transient demonstrations of components and device levels for bioresorbable implantation enable the future direction of the transient electronics, as temporary implanters and other medical devices that provide important diagnosis and precisely personalized therapies. A final section outlines recent bioresorbable applications for sensing various biophysical parameters, monitoring electrophysiological activities, and delivering therapeutic signals in a programmed manner.

• Bulletin of the Korean Chemical Society
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• v.33 no.10
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• pp.3218-3224
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• 2012

Uniform and well dispersed metal sulfide semiconductor nanoparticles incorporated into matrices of alginate biopolymer are prepared by using a facile in situ method. The reaction was accomplished by impregnation of alginate with divalent metal ions followed by reaction with thioacetamide. XRD analysis showed that the nanoparticles incorporated in the polymer matrix were of cubic structure with the average particle diameter of 1.8 to 4.8 nm. Field emission scanning electron microscopy and high resolution transmission electron microscopy images indicated that the particles were well dispersed and distributed uniformly in the matrices of alginate polymer. FT-IR spectra confirmed the presence of alginate in the nanocomposite. The crystalline nature and thermal stability of the alginate polymer was found to be influenced by the nature of the divalent metal ions used for the synthesis. The proposed method is considered to be a simple and greener approach for large scale synthesis of uniform sized nanoparticles.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.114-114
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• 2011

We report a high-performance and air-stable flexible and invisible semiconductor which can be substitute for the n-type organic semiconductors. N-type organic-inorganic nanohybrid superlattices were developed for active semiconducting channel layers of thin film transistors at low temperature of $150^{\circ}C$ by using molecular layer deposition with atomic layer deposition. In these nanohybrid superlattices, self-assembled organic layers (SAOLs) offer structural flexibility, whereas ZnO inorganic layers provide the potential for semiconducting properties, and thermal and mechanical stability. The prepared SAOLs-ZnO nanohybrid thin films exhibited good flexibility, transparent in the visible range, and excellent field effect mobility (> 7cm2/$V{\cdot}s$) under low voltage operation (from -1 to 3V). The nanohybrid semiconductor is also compatible with pentacene in p-n junction diodes.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.465-465
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• 2012

In this study, we developed an Al2O3 nanolaminated single gas barrier layer using a Neutral Beam Assisted Sputtering (NBAS) process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nanocrystal phase with various grain sizes and lead to the formation of a nanolaminated structure in the single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the nanolaminated Al2O3 thin films by NBAS process have improved more than 40% compared with that of conventional Al2O3 layers by the RF magnetron sputtering process under the same sputtering conditions.

• Bulletin of the Korean Chemical Society
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• v.20 no.2
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• pp.226-228
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• 1999

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.787-790
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• 2009

High contrast red, green and blue organic light-emitting diodes were fabricated using inorganic metal multi layer composed of thin Al, KCl and thick Al and then were compared to optical and electrical characteristics with the attached polarizer and conventional OLEDs. Ambient light reflection of OLED using inorganic metal layer, polarizer and conventional metal layer were 29.2, 31.1 and 82.5% respectively. Optical characteristics of OLEDs using inorganic metal layer were max luminescence of 13040 cd/m2 and luminous efficiency of 2.12 cd/A at 8V whereas OLEDs using polarizer has 8456 cd/m2 and 1.43 cd/A at 8V each. OLEDs including inorganic metal multi layers show significant technical advantages in achieving high performance of OLED display with improved contrast ratio of 251:1, specifically in Red OLED.

• Journal of the Microelectronics and Packaging Society
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• v.20 no.2
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• pp.1-9
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• 2013

Recently flexible electronic devices have attracted a great deal of attention because of new application possibilities including flexible display, flexible memory, flexible solar cell and flexible sensor. In particular, development of flexible memory is essential to complete the flexible integrated systems such as flexible smart phone and wearable computer. Research of flexible memory has primarily focused on organic-based materials. However, organic flexible memory has still several disadvantages, including lower electrical performance and long-term reliability. Therefore, emerging research in flexible electronics seeks to develop flexible and stretchable technologies that offer the high performance of conventional wafer-based devices as well as superior flexibility. Development of flexible memory with inorganic silicon materials is based on the design principle that any material, in sufficiently thin form, is flexible and bendable since the bending strain is directly proportional to thickness. This article reviews progress in recent technologies for flexible memory and flexible electronics with inorganic silicon materials, including transfer printing technology, wavy or serpentine interconnection structure for reducing strain, and wafer thinning technology.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.299-299
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• 2011

A dipolar interlayer can cause dramatic changes in the device characteristics of organic field-effect transistors (OFETs) or photovoltaics. A shift in the threshold voltage, for example, has been observed in an OFET where the organic semiconductor active layer is deposited on SiO2 modified with a dipolar monolayer. Dipolar molecules can similarly be used to change the current-voltage characteristics of organic-inorganic heterojunctions. We have conducted a series of experiments in which different molecular linkages are placed between a pentacene thin film and a silicon substrate. Interface modifications with different linkages allow us to predict and examine the nature of tunneling through pentacene on modified Si surfaces with different dipole moment. The molecular-scale structure and the tunneling properties of pentacene thin films on modified Si (001) with nitrobenzene and styrene were examined using scanning tunneling spectroscopy. Electronic interfaces using organic surface dipoles can be used to control the band lineups of a semiconductor at organic/inorganic interfaces. Our results can provide insights into the charge transport characteristics of organic thin films at electronic interfaces.