• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.248-248
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• 2016

We have investigated the crystallinity, preferential ordering, and interfacial stability of 1,4,5,8,9,11-hexaazatriphenylene-hexanitrile (HATCN) thin film interconnected with organic/inorganic multilayer. At the region close to the organic-organic interface, HATCN formed low crystalline order with substantial amorphous phase. As film growth continued, HATCN stacked with high crystalline phase. After a sputtering deposition of the indium zinc oxide (IZO) layer on top of HATCN/organic layer, the volume fraction of preferentially ordered HATCN crystals increased without any structural deterioration. In addition, the HATCN surface was kept quite stable by preserving the sharp interface between HATCN and sputtering deposited IZO layers.

• The Korean Journal of Ceramics
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• v.7 no.1
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• pp.26-29
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• 2001

Indium tin oxide (ITO) films were deposited on glass substrates at $300^{\circ}C$ in oxygen/argon mixtures by RF-enhanced DC-magnetron sputtering and were compared to those by conventional DC magnetron sputtering. The RF enhancement was performed using a coil above an ITO target. X-ray diffraction measurements revealed that RF-enhanced plasma affected the preferred orientation and the crystallinity of the films. The resistivity of the films prepared by RF-enhanced DC-magnetron sputtering was almost constant at oxygen content lower than 0.3% and then increased sharply with increasing oxygen content. However the resistivity of the films by conventional sputtering has little dependence on the oxygen content. Those results can be explained on the basis of the incorporation of oxygen into the ITO films due to the RF enhancement.

• Journal of Electrochemical Science and Technology
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• v.3 no.2
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• pp.68-71
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• 2012

The electrospinning technique is a revolutionary template-catalyst-free method that can generate 1D nanostructure with the tunability and the potential for the mass production. This approach received a great deal of attention due to its ability to give direct pathways for electrical current and has been utilized in various electronic applications. However, the delamination of inorganic electrospun film has prevented the intense utilization due to the thermal expansion/contraction during the calcination. In this study, we propose an electrical grounding method for transparent conducting oxide and electrospun nanowires to enhance the adhesion after the calcination. Then, we examined the potential of the technique on ZnO based dye-sensitized solar cells.

• Korean Journal of Materials Research
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• v.8 no.8
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• pp.714-719
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• 1998

저용융점을 가진 새로운 무기접착제인 단사정 HBO2가 알루미나 분말의 선택적 레이저 소결을 하기 위한 접착제로서 개발되었다. 12$0^{\circ}C$로 유지된 진공오븐 안에서 Boron Oxide 분말을 탄수시키면 단사정 HBO2가 만들어진다. 이것을 이용하여 만들어진 green body는 현재까지 알루미나 분말의 선택적 레이저 소결을 위하여 개발된 다른 무기 접착제들인 알루미늄(AI)과 Ammonium Phosphate(NH4H2PO4)을 이용하여 제조된 것에 비교하여 훨씬 높은 굽힘 강도를 가지고 있고 또 정밀도가 우수하였다. Green body를 열처리하여서 얻은 세라믹 시편도 똑같은 결과를 보여주었다. 이 이유는 단사정 HBO2가 낮은 점도를 보여주고 알루미나 분말에 대하여 좋은 젖음성을 가지고 있기 때문에 가능한 것으로 사료되어진다. 접착제로서 Boron Oxide의 양, 레이저 에너지밀도 등이 SLS에 의하여 제조되어진 복합재료의 굽힘강도에 미치는 영향이 조사되었다.

• Journal of the Korean Ceramic Society
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• v.30 no.11
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• pp.949-954
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• 1993

Microstructural development at the ZrO2/NiTi bonding interface and reaction products were examined and identified with SEM and AEM. Ti-oxide, Ti2Ni and Ni2Ti layer were observed whose thickness depends on bonding temperature typically. The development of Ti-oxide layer is related with oxygen ion in ZrO2 and liquid phase Ti2Ni. It is considered that compositional deviation from homogeneity and residual stress caused by thermal expansion mismatch are closely related with the formation of the Ti2Ni phase.

• Journal of Surface Science and Engineering
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• v.29 no.5
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• pp.577-584
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• 1996

Silicon oxide films with high hardness and water repellency were prepared by microwave plasma-enhanced CVD using four kind of organosilicon compound-fluoro-alkyl silane mixtures as source gases. An argon gas was used as a carrier gas for fluoro-alkyl silane. The substrate temperatures during deposition were controlled by resistant heating at a constant value between 50 and $300^{\circ}C$. The hardness of the films increased, but the deposition rate and the contact angle for a water drop decreased with increasing substrate temperature. The number of methoxy groups also affected the water repellency and hardness. The deposited films became more inorganic with increasing substrate temperature because of the thermal dissociation of reactants.

• Proceedings of the KIEE Conference
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• 2002.11a
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• pp.164-166
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• 2002

Over the past two decades, the electrochemical supercapaictors are receiving growing attention due to their possible applications as power backup in electronic equipment and electrical vehicles. Both of amorphous cobalt oxide and manganese dioxide were prepared by sol-gel process reported in our previous work. Nano-structured supramolecular oligomer of 1,5-diamino anthraquinone(DAAQ) coated metal oxides were successfully prepared by electrochemical oxidation from an acidic non-aqueous medium. We established process parameters of the technique for the formation of nano-structured materials. Furthermore, improved the capacitive properties of the nano structured metal oxide electrodes using controlled solution chemistry. $CoO_2$ and $MnO_2$-based composite electrode showed relatively good electrochemical behaviors in acidic electrolyte system with respect to specific capacity and scan rate dependency

• Bulletin of the Korean Chemical Society
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• v.7 no.3
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• pp.235-237
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• 1986

Reaction of $(E)-{\beta}-chloro-{\gamma}$-hydroxyvinylmercurials, prepared by mercuration of propargyl alcohol and 2-methyl-3-butyne-2-ol, with olefins in the presence of a catalytic amount of $Li_2PdCl_4$ and 2 equiv of cupric chloride in methanol at $50^{\circ}C$ gave the corresponding (E,E)-2,4-dienols in moderate yields. However, addition of 1 equiv of inorganic bases such as magnesium oxide to the reaction mixture brings a rapid and clean vinylation and gave high yields of the dienols at room temperature. In the case of hindered (E)-2-chloro-3-chloromercuri-2-buten-1,4-diol prepared from 2-butyne-1,4-diol, reaction with olefins gave the dienols only in low yields even in the presence of 2 equiv of magnesium oxide.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04b
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• pp.39-42
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• 2000

As gate dimensions continue to shrink below $0.2{\mu}m$, improving CD (Critical Dimension) control has become a major challenge during CMOS process development. Anti-Reflective Coatings are widely used to overcome high substrate reflectivity at Deep UV wavelengths by canceling out these reflections. In this study, we have investigated Batchtype system for PECVO SiOxNy as Anti-Reflective Coatings. The Singletype system was baseline and Batchtype system was new process. The test structure of Singletype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ and Batchtype is SiON $250{\AA}$ + Cap Oxide $50{\AA}$ or N2O plasma treatment. Inorganic chemical vapor deposition SiOxNy layer has been qualified for bottom ARC on Poly+WSix layer, But, this test was practiced on the actual device structure of TiN/Al-Cu/TiN/Ti stacks. A former day, in Batchtype chamber thin oxide thickness control was difficult. In this test, Batchtype system is consist of six deposition station, and demanded 6th station plasma treatment kits for N2O treatment or Cap Oxide after SiON $250{\AA}$. Good reflectivity can be obtained by Cap Oxide rather than N2O plasma treatment and both system of PECVD SiOxNy ARC have good electrical properties.

• Journal of Sensor Science and Technology
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• v.14 no.1
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• pp.56-61
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• 2005

This paper present characteristics of chromium oxide thin-film as piezoresistive sensors, which were deposited on Si substrates by DC reactive magnetron sputtering in an argon-Oxide atmosphere for high temperature applications. The chemical composition, physical and electrical properties and thermal stability ranges of the $CrO_{x}$ sensing elements have studied. $CrO_{x}$ thin films with a linear gauge factor(GF${\fallingdotseq}$15), high electrical resistivity (${\rho}$ = $340{\mu}{\Omega}cm$) and TCR<-55 ppm/$^{\circ}C$ have been obtained. These $CrO_{x}$ thin films may allow high temperature pressure sensor miniaturization to be achieved.