• Proceedings of the Korean Institute of Building Construction Conference
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• 2012.05a
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• pp.217-218
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• 2012

To prevent energy waste in buildings used heat insulator. Heat insulator materials can be classified inorganic and organic. The organic material is be toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. This study focused on thermal conductivity and density of inorganic foam material for using industrial by-products materials.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2013.11a
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• pp.198-199
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• 2013

To prevent energy waste in buildings used heat insulator. Heat insulator materials can be classified inorganic and organic. The inorganic material has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. Technologies on energy saving and materials used in curtain walls have progressed with increase of high-rise and large buildings. However, there is little study to explain water resistance performance of the curtain walls. This study focused on evaluation of insulation of inorganic materials and performance evaluation by thermal conductivity.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2012.11a
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• pp.211-212
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• 2012

To prevent energy waste in buildings used heat insulator. Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. Technologies on energy saving and materials used in curtain walls have progressed with increase of high-rise and large buildings. However, there is little study to explain fire resistance performance of the curtain walls. This study focused on evaluation of the physical properties of light-weight inorganic foam panel for using industrial by-products materials and performance evaluation by mock up test.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2011.11a
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• pp.79-81
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• 2011

To prevent energy waste in buildings used heat insulator. Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. This study focused on evaluation of the physical properties and fire-resistance of inorganic foam material for using industrial by-products materials for the applicability of Fire-resistance Light-weight material.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2015.05a
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• pp.90-91
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• 2015

Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. In this study, cullet and fly ash were used as basic materials in order to secure a recycling technology of by-products which was mostly discarded and reclimed, and measure of physical properties of light-weight ceramic insulator.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2014.11a
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• pp.180-181
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• 2014

Heat insulator materials can be classified inorganic and organic. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials. In this study, cullet and fly ash were used as basic materials in order to secure a recycling technology of by-products which was mostly discarded and reclimed, and measure of physical properties of light-weight ceramic insulator.

• Proceedings of the Korean Institute of Building Construction Conference
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• 2016.05a
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• pp.124-125
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• 2016

This study is to development of inorganic insulation material using by-product materials. The organic material is due to toxic gas emission, when a fire occurs. And it has lower water resistance. The inorganic material is heavy and worse thermal performance than organic materials.In this study, cullet and fly ash were used as basic materials in order to secure a recycling technology of by-products which was mostly discarded and reclimed, and measure of physical properties of light-weight ceramic insulator.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.932-934
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• 2003

For the insulator of inorganic thin film electroluminescent (TFEL), devices AlON combined with TiON was used and it exhibits higher luminance than AlON as well as $Al_{2}O_{3}$ insulator. Furthermore, using AlON with TiON film show better stability and higher luminance than that with $TiO_{2}$ grown by conventional atomic layer deposition (ALD) for the application of the insulator of ZnS:Mn TFEL device.

• 전기의세계
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• v.18 no.2
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• pp.15-20
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• 1969

The main focus of this paper is on the study of the .gamma. ray irradiation effect upon the electrical properties of a B-kind insulator which is one of the inorganic insulators. The mica is so typical of the B kind insulators as to be selected for a sample. DC, AC, and Impulse voltage is applied to the variable .gamma. ray irradiated dose samples with the constant time duration and the time variable samples with the .gamma. ray irradiated dose. The dielectric breakdown voltage and dielectric constant are measured from the samples and we get the experimental data that the dielectric breakown voltage variations are relatively large, but the dielectric constants are almost constant. The above conclusion is useful for the selection and application of the inorganic insulators under the irradiation effects, and we expect that the conclusion can apply to not only B-kind insulators but also the inorganic insulators.

• Journal of the Korean Ceramic Society
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• v.39 no.4
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• pp.377-385
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• 2002

The possibility of $ZrO_2$ thin film as insulator for Metal-Ferroelectric-Insulator-Semiconductor(MFIS) structure was investgated. $SrBi_2Ta_2O_9$ and $SrBi_2Ta_2O_9$(SBT) thin films were deposited on P-type Si(111) wafer by R. F. magnetron sputtering method. The electrical properties of MFIS gate were relatively improved by inserting the $ZrO_2$ buffer layer. The window memory increased from 0.5 to 2.2V in the applied gate voltage range of 3-9V when the thickness of SBT film increased from 160 to 220nm with 20nm thick $ZrO_2$. The maximum value of window memory is 2.2V in Pt/SBT(160nm)/$ZrO_2$(20nm)/Si structure with the optimum thickness of $ZrO_2$. These memory windows are sufficient for practical application of NDRO-FRAM operating at low voltage.