• 제목/요약/키워드: infrared ray sensor

검색결과 67건 처리시간 0.03초

PIR 센서와 정전류 IC를 이용한 인체 감지형 POWER LED 구동 회로 (A Human Body Sensing POWER LED Drive Circuit Using Constant-Current IC and PIR Sensor)

  • 박종연;유진완;최왕섭
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2008년도 제39회 하계학술대회
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    • pp.2295-2296
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    • 2008
  • 본 논문에서는 에너지 절감을 위하여 POWER LED 구동회로를 PIR(Pyroelectric Infrared Ray) 센서를 이용하여 ON/OFF 제어를 하였다. POWER LED의 전류 특성을 설명하였으며 설명된 전류 특성을 개선하고자 정전류 유지 회로를 구성하였다. 그리고 인체 감지 센서에서 발생되는 ON/OFF 신호를 증폭시키는 구동 회로를 설계하여 정전류 유지 회로에 직접 결합하는 방식을 제안하였다. 실험한 결과는 POWER LED의 ON 상태시 4Watt, OFF 상태시 0.5Watt를 소비하였으며, 정전류 유지 회로에 의해 POWER LED 구동 전류의 리플이 줄어들어 안정적인 동작을 하는 것으로 나타났다.

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Growth of High Quality $Cd_{0.96} Zn_{0.04} Te$ Epilayers Used for an Far-infrared Sensor and Radiation Detector

  • Kim, B. J.
    • 한국공작기계학회논문집
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    • 제11권6호
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    • pp.111-117
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    • 2002
  • The high quality and a nearly stoichometric growth of $Cd_{1-y} Zn_y$/Te(y=0.04) epilayers have been successfully grown on GaAs substrate by hot wall epitaxy (HWE) by optimizing the growth condition including the preheating treatment and Cd reservoir temperature. The relationship between quality and thickness was examined and best value of FWHM from X-ray rocking curve of 121 arcsec are obtained. Also, emission peaks related to the recombination of free excitons such as the ground state and the first excited state were observed in the PL spectrum at 4.2K. The ($A^0$, X) emission related to Cd vacancy and deep level emission was not measured. These results indicated that the grown CZT/GaAs epilayer was high qualify and purity.

안드로이드 기반의 실시간 범죄방지 보안솔루션 설계 및 구현 (Design and implementation of The crime prevention security solution based on Android System)

  • 봉선종;윤희용
    • 한국컴퓨터정보학회:학술대회논문집
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    • 한국컴퓨터정보학회 2014년도 제49차 동계학술대회논문집 22권1호
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    • pp.385-386
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    • 2014
  • 최근 강력범죄와 빈집을 대상으로 하는 범죄가 증가함에 따라 언제 어디서나 실시간으로 주거지를 확인하고 대응을 할 수 있는 보안 솔루션에 대한 요구가 증가하고 있다. 본 논문에서 구현된 보안솔루션은 서버와의 통신을 통해 실시간으로 사용자의 스마트폰 애플리케이션에서 내부 침입을 확인할 수 있으며, 내부의 개폐장치를 스마트폰 애플리케이션을 통해 동작하는 보안 솔루션을 제안한다.

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Land Mine Detecting Technology by Using IR Cameras

  • Shimoi, Nobuhiro;Takita, Yoshihiro;Nonami, Kenzo;Wasaki, Katsumi
    • 제어로봇시스템학회:학술대회논문집
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    • 제어로봇시스템학회 2001년도 ICCAS
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    • pp.28.4-28
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    • 2001
  • This paper proposes an IR camera system that performs the task of removing mines for humanitarian purposes. Because of the high risks involved, it is necessary to conduct mine detection from the most remote endeavoring. By mating use of infrared ray (IR) cameras, scattered mines can be detected from remote locations. In the case of mines buried in the ground, detection is possible if the peripheral temperature difference is large enough between the ground and mine weapon. As one of the world´s advanced nations in sensor technology, Japan should promote surveys and studies for detecting mines safely by using its advanced remote sensing technologies.

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유기 발광 소자 디스플레이를 위한 적외선 램프 소스를 활용한 열 전사 픽셀 패터닝 (Thermal Transfer Pixel Patterning by Using an Infrared Lamp Source for Organic LED Display)

  • 배형우;장영찬;안명찬;박경태;이동구
    • 센서학회지
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    • 제29권1호
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    • pp.27-32
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    • 2020
  • This study proposes a pixel-patterning method for organic light-emitting diodes (OLEDs) based on thermal transfer. An infrared lamp was introduced as a heat source, and glass type donor element, which absorbs infrared and generates heat and then transfers the organic layer to the substrate, was designed to selectively sublimate the organic material. A 200 nm-thick layer of molybdenum (Mo) was used as the lightto-heat conversion (LTHC) layer, and a 300 nm-thick layer of patterned silicon dioxide (SiO2), featuring a low heat-transfer coefficient, was formed on top of the LTHC layer to selectively block heat transfer. To prevent the thermal oxidation and diffusion of the LTHC material, a 100 nm-thick layer of silicon nitride (SiNx) was coated on the material. The fabricated donor glass exhibited appropriate temperature-increment property until 249 ℃, which is enough to evaporate the organic materials. The alpha-step thickness profiler and X-ray reflection (XRR) analysis revealed that the thickness of the transferred film decreased with increase in film density. In the patterning test, we achieved a 100 ㎛-long line and dot pattern with a high transfer accuracy and a mean deviation of ± 4.49 ㎛. By using the thermal-transfer process, we also fabricated a red phosphorescent device to confirm that the emissive layer was transferred well without the separation of the host and the dopant owing to a difference in their evaporation temperatures. Consequently, its efficiency suffered a minor decline owing to the oxidation of the material caused by the poor vacuum pressure of the process chamber; however, it exhibited an identical color property.

초음파 센서를 이용한 이동로봇의 경로 계획 (Path Planing for a Moving Robot using Ultra Sonic Sensors)

  • 차경환;신현실;황기현
    • 융합신호처리학회논문지
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    • 제8권1호
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    • pp.78-83
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    • 2007
  • 로봇이 미지의 환경에서 주위의 정보를 추출하여 인식하기 위해 비젼 센서, 적외선 센서, 초음파 센서 등을 이용해 주변 정보를 얻는다. 그 중 가장 많이 사용되고 있는 비젼 센서는 빛에 대한 간섭에 민감하여 어두운 곳이나 밝은 곳에서는 데이터 추출이 어려우며, 표시 된 마크나 직선 성분 및 곡선의 이미지를 통해 데이터를 추출함에 있어 많은 계산을 요구한다.반면 초음파 센서는 비젼 시스템의 단점을 극복하고 쉽게 사용할 수 있는 센서이다. 특히 어두운 곳의 물체 정보 및 거리 정보를 얻을 수 있고 비젼 시스템보다 사용하기 간단하다. 본 논문에서는 초음파 빔의 왜곡 및 산란의 특성을 고려하여 부정확 정보에 대한 오차를 줄여 환경 인식, 경로 계획 및 자율 주행의 극대화를 시키기 위한 알고리즘을 연구 및 개발한다. 그리고 알고리즘을 실제 이동 로봇에 적용하여 경로 계획 및 환경 인식이 가능한 시스템을 구현한다.

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$3.2\;{\mu}m$ 중적외선 센서를 이용한 메탄가스누출검지기의 개발 (Development of Methane Gas Leak Detector Using Mid-infrared Ray Sensors with $3.2\;{\mu}m$)

  • 박규태;유근준;한상인;오정석;김지윤;안상국;윤명섭;권정락
    • 한국가스학회지
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    • 제12권2호
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    • pp.48-52
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    • 2008
  • 산업의 성장으로 가스사용량이 증가함에 따라 가스설비, 화학플랜트 등 시설 또한 점차로 증가하고 있으나, 가스에 대한 안전관리는 여전히 미흡한 실정이다. 공장과 가정에서 많이 사용되고 있는 메탄은 천연가스의 주성분으로 가연성이면서 폭발성가스이어서 그에 대한 안전관리도 매우 중요하다. 그 한 가지 방안으로 $3.2\;{\mu}m$ 중적외선 영역의 LED 및 PD를 이용하여 메탄가스누출검지시스템을 개발하고자 한다. 이 파장대역의 센서로 레이저를 이용할 경우 고열이 발생하여 초저온 냉각장치가 필요하나 LED는 상온에서 동작함으로 냉각장치가 필요 없다. 그래서 초소형이나 휴대용으로 구현이 가능하다. $3.2\;{\mu}m$ 부근의 파장대역은 $1.67\;{\mu}m$에 비하여 메탄흡수강도가 강하여서 극미량의 가스탐지가 가능하고 응답성 또한 빠르다. 본 연구에서는 이를 상용화하여 매설 및 노출배관 등 가스설비의 가스누출을 보다 정확하고 신속히 검지함으로써 사고를 미연에 방지하고 그 피해를 최소화하고자 한다.

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Determination of Ascorbic Acid, Acetaminophen, and Caffeine in Urine, Blood Serum by Electrochemical Sensor Based on ZnO-Zn2SnO4-SnO2 Nanocomposite and Graphene

  • Nikpanje, Elham;Bahmaei, Manochehr;Sharif, Amirabdolah Mehrdad
    • Journal of Electrochemical Science and Technology
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    • 제12권2호
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    • pp.173-187
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    • 2021
  • In the present research, a simple electrochemical sensor based on a carbon paste electrode (CPE) modified with ZnO-Zn2SnO4-SnO2 and graphene (ZnO-Zn2SnO4-SnO2/Gr/CPE) was developed for the direct, simultaneous and individual electrochemical measurement of Acetaminophen (AC), Caffeine (Caf) and Ascorbic acid (AA). The synthesized nano-materials were investigated using scanning electron microscopy, X-ray Diffraction, Fourier-transform infrared spectroscopy, and electrochemical impedance spectroscopy techniques. Cyclic voltammetry and differential pulse voltammetry were applied for electrochemical investigation ZnO-Zn2SnO4-SnO2/Gr/CPE, and the impact of scan rate and the concentration of H+ on the electrode's responses were investigated. The voltammograms showed a linear relationship between the response of the electrode for individual oxidation of AA, AC and, Caf in the range of 0.021-120, 0.018-85.3, and 0.02-97.51 μM with the detection limit of 8.94, 6.66 and 7.09 nM (S/N = 3), respectively. Also, the amperometric technique was applied for the measuring of the target molecules in the range of 0.013-16, 0.008-12 and, 0.01-14 μM for AA, AC and, Caf with the detection limit of 6.28, 3.64 and 3.85 nM, respectively. Besides, the ZnO-Zn2SnO4-SnO2/Gr/CPE shows an excellent selectivity, stability, repeatability, and reproducibility for the determination of AA, AC and, Caf. Finally, the proposed sensor was successfully used to show the amount of AA, AC and, Caf in urine, blood serum samples with recoveries ranging between 95.8% and 104.06%.

Structure and Conductivity Characteristics of Sandwich Structures with Fullerite Films

  • Berdinsky, A.S.;Shevtsov, Yu. V.;Chun, Hui-Gon;Yoo, Yong-Zoo;Fink, D.;Ayupov, B.M.
    • 센서학회지
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    • 제13권5호
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    • pp.399-404
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    • 2004
  • We report on the technology of formation of sandwich structures based on fullerite films and on experimental results in research of optical and conductivity properties of these sandwich samples. Single crystals of sapphire (100) or silicon were used as substrates. The sandwich specimens were based on the structure M/$C_{60}$/M (M=Cr, Pd, Ag, Al, Cu). The thickness of the fullerite films was about $0.2{\sim}1.0{\mu}m$. The area of the $C_{60}$ film under the top contact was about $1cm^{2}$. The specimens have been investigated by infrared spectroscopy, spectra-photometry, ellipsometry and X-ray diffraction analysis. Measurements of the current/voltage characteristics and research on the temperature dependence of conductivity were performed as well. It was shown that metals such as Cr, Pd, Ag, Al, and Cu penetrate easily into the fullerite films. It appears that these specimens have a large conductivity. For silver/$C_{60}$ and other sandwich structures the conductivities show a semiconductor-like behaviour.

In-situ 도핑된 M/NEMS용 다결정 3C-SiC 박막의 특성 (Characteristics of in-situ doped polycrystalline 3C-SiCthin films for M/NEMS applications)

  • 김강산;정귀상
    • 센서학회지
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    • 제17권5호
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    • pp.325-328
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    • 2008
  • This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at $1200^{\circ}C$ using HMDS (hexamethyildisilane: $Si_2(CH_3)_6)$) as Si and C precursor, and $0{\sim}100$ sccm $N_2$ as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on $SiO_2/Si$ substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from $8.35{\Omega}{\cdot}cm$ with $N_2$ of 0 sccm to $0.014{\Omega}{\cdot}cm$ with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from $3.0819{\times}10^{17}$ to $2.2994{\times}10^{19}cm^{-3}$ and their electronic mobilities increased from 2.433 to $29.299cm^2/V{\cdot}S$, respectively.