• Title/Summary/Keyword: inert materials

Search Result 227, Processing Time 0.029 seconds

Application of Pulsed Chemical Vapor Deposited Tungsten Thin Film as a Nucleation Layer for Ultrahigh Aspect Ratio Tungsten-Plug Fill Process

  • Jang, Byeonghyeon;Kim, Soo-Hyun
    • Korean Journal of Materials Research
    • /
    • v.26 no.9
    • /
    • pp.486-492
    • /
    • 2016
  • Tungsten (W) thin film was deposited at $400^{\circ}C$ using pulsed chemical vapor deposition (pulsed CVD); film was then evaluated as a nucleation layer for W-plug deposition at the contact, with an ultrahigh aspect ratio of about 14~15 (top opening diameter: 240~250 nm, bottom diameter: 98~100 nm) for dynamic random access memory. The deposition stage of pulsed CVD has four steps resulting in one deposition cycle: (1) Reaction of $WF_6$ with $SiH_4$. (2) Inert gas purge. (3) $SiH_4$ exposure without $WF_6$ supply. (4) Inert gas purge while conventional CVD consists of the continuous reaction of $WF_6$ and $SiH_4$. The pulsed CVD-W film showed better conformality at contacts compared to that of conventional CVD-W nucleation layer. It was found that resistivities of films deposited by pulsed CVD were closely related with the phases formed and with the microstructure, as characterized by the grain size. A lower contact resistance was obtained by using pulsed CVD-W film as a nucleation layer compared to that of the conventional CVD-W nucleation layer, even though the former has a higher resistivity (${\sim}100{\mu}{\Omega}-cm$) than that of the latter (${\sim}25{\mu}{\Omega}-cm$). The plan-view scanning electron microscopy images after focused ion beam milling showed that the lower contact resistance of the pulsed CVD-W based W-plug fill scheme was mainly due to its better plug filling capability.

Synthesis of Intermetallics and Nanocomposites by High-Energy Milling

  • Bernd F. Kieback;H. Kubsch;Alexander Bohm;M. Zumdick;Thomas Weissgaerber
    • Journal of Powder Materials
    • /
    • v.9 no.6
    • /
    • pp.416-421
    • /
    • 2002
  • Elemental powders are used in high energy milling processes for the synthesis of new compounds. The low temperature solid state reactions during milling in inert gas atmosphere may result in intermetallic phases, carbides, nitrides or silicides with a nanocrystalline structure. To obtain dense materials from the powders a pressure assisted densification is necessary. On the other side the defect-rich microstructure can be used for activated sintering of elemental powder mixtures to obtain dense bodies by pressureless sintering. Results are discussed for nanocrystalline cermet systems and for the sintering of aluminides and silicides.

Emission Characteristics of Flat Fluorescent Lamp for LCD Backlight Using Inert Gas Mixture

  • Heo, Sung-Taek;Lee, Yang-Kyu;Kang, Jong-Hyun;Yoon, Seung-Il;Oh, Myung-Hoon;Lee, Dong-Gu
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2007.08b
    • /
    • pp.1522-1525
    • /
    • 2007
  • In this study, flat fluorescent lamps (FFLs) having surface discharge structures was fabricated by screen printing technique and were studied using spectraradiometer and square pulse power supply. Two types of FFLs having different shapes of electrodes (crosstype and line-type structure) were compared with variation of discharge shape and mixed gas ratio.

  • PDF

Phase analysis of simulated nuclear fuel debris synthesized using UO2, Zr, and stainless steel and leaching behavior of the fission products and matrix elements

  • Ryutaro Tonna;Takayuki Sasaki;Yuji Kodama;Taishi Kobayashi;Daisuke Akiyama;Akira Kirishima;Nobuaki Sato;Yuta Kumagai;Ryoji Kusaka;Masayuki Watanabe
    • Nuclear Engineering and Technology
    • /
    • v.55 no.4
    • /
    • pp.1300-1309
    • /
    • 2023
  • Simulated debris was synthesized using UO2, Zr, and stainless steel and a heat treatment method under inert or oxidizing conditions. The primary U solid phase of the debris synthesized at 1473 K under inert conditions was UO2, whereas a (U, Zr)O2 solid solution formed at 1873 K. Under oxidizing conditions, a mixture of U3O8 and (Fe, Cr)UO4 phases formed at 1473 K, whereas a (U, Zr)O2+x solid solution formed at 1873 K. The leaching behavior of the fission products from the simulated debris was evaluated using two methods: the irradiation method, for which fission products were produced via neutron irradiation, and the doping method, for which trace amounts of non-radioactive elements were doped into the debris. The dissolution behavior of U depended on the properties of the debris and aqueous solution for immersion. Cs, Sr, and Ba leached out regardless of the primary solid phases. The leaching of high-valence Eu and Ru ions was suppressed, possibly owing to their solid-solution reaction with or incorporation into the uranium compounds of the simulated debris.

Assessment of Ni Catalyst Properties for Removal of O2 and CO Impurity in Inert Gas (불활성 가스의 O2와 CO 불순물 제거를 위한 Ni 촉매의 물성 평가)

  • Kim, Kwangbae;Jin, Saera;Kim, Eunseok;Lim, Yesol;Lee, Hyunjun;Kim, Seonghoon;Noh, Yunyoung;Song, Ohsung
    • Journal of the Korea Academia-Industrial cooperation Society
    • /
    • v.21 no.4
    • /
    • pp.588-595
    • /
    • 2020
  • This study examined the catalytic property of Ni-catalyst used in the gas purifying process to manufacture inert gases of N2 and Ar with high-purity over 9N for semiconductor industrial applications. Two types of Ni-catalysts with a cylindrical shape (C1) and churros shape structure (C2) were compared for the assessment. Optical microscopy and FESEM were used to analyze the shape and microstructure of the Ni-catalyst. EDS, XRD, and micro-Raman characterization were performed to examine the composition and properties. BET and Pulse Titration analyses were conducted to check the surface area and catalytic property of the Ni-catalyst. From the composition analysis results, C1 contained a relatively large amount of graphite as an impurity, and C2 contained higher Ni contents than C1. From specific surface area analysis, the specific surface area of C2 was approximately 1.69 times larger than that of C1. From catalytic property analysis, outstanding performance in O2 and CO impurity removal was observed at room temperature. Therefore, C2, having low-impurity and large specific surface area, is a suitable catalyst for the high-purity inert gas process in the semiconductor industry because of its outstanding performance in O2 and CO impurity removal at room temperature.

Advanced Metallic Coating for the Improvement of Corrosion and Erosion Resistance of Iron Base Materials Used in Buildings and Special Works

  • Jayaraj, J.;Seok, H.K.;Byun, K.H.;Fleury, E.;Hong, K.T.
    • Corrosion Science and Technology
    • /
    • v.4 no.2
    • /
    • pp.64-68
    • /
    • 2005
  • Various metallic materials are coated on Fe base materials via thermal spraying or welding process to improve both corrosion resistance as well as erosion resistance of the Fe base materials used in buildings and special works. The mechanical properties and corrosion resistance of the coat are estimated by means of hardness measurement and anodic polarization test. In additions, the effect of alloying elements and microstructure of the coatings on the mechanical and chemical properties of the coat is investigated using X- ray diffraction, Optical microscope, Transmission electron microscopy and Auger analysis. The coating deposited by tungsten inert gas (TIG) welding exhibit a good combination of hardness and corrosion properties.

The influence of atomosphere on high temperature crystal growth

  • Klimm, D.;Schroder, W.
    • Journal of the Korean Crystal Growth and Crystal Technology
    • /
    • v.9 no.4
    • /
    • pp.360-364
    • /
    • 1999
  • The growth of crystals with high melting point$t_{fus}$$\geq$$1600^{\circ}C$ faces the researcher with experimental problems, as the choice of materials that withstand such high t is rather limited. Many metallic construction materials are in this high t range already molten or exhibit at least a drastically reduced mechanical strength. The very few materials with$t_{fus}$$1600^{\circ}C$ as e.g. W, Mo, and partially even Ir are more or less sensitive against oxygen upon heating. Whenever possible, high t crystal growth is performed under inert atmosphere (noble gases). Unfortunately, many oxides are not thermodynamically stable under such conditions, as reduction takes place within such atmosphere. A thoroughly search for suitable growth conditions has to be performed, that are on the one side "oxidative enough" to keep the oxides stable and on the other side "reductive enough" to avoid destruction of constructive parts of the crystal growth assembly. The relevant parameters are t and the oxygen partial pressure${po}_{2}$. The paper discusses quantitatively relevant properties of interesting oxides and construction materials and wasy to forecast theri behavior under growth conditions.

  • PDF

Synthesis of Vertically Aligned SiNW/Carbon Core-shell Nanostructures

  • Kim, Jun-Hui;Kim, Min-Su;Kim, Dong-Hwan
    • Proceedings of the Korean Vacuum Society Conference
    • /
    • 2014.02a
    • /
    • pp.488.2-488.2
    • /
    • 2014
  • Carbon-based materials such as carbon nanotubes and graphene have emerged as promising building blocks in applications for nanoelectronics and energy devices due to electrical property, ease of processability, and relatively inert electrochemistry. In recent years, there has been considerable interest in core-shell nanomaterials, in which inorganic nanowires are surrounded by inorganic or organic layers. Especially, carbon encapsulated semiconductor nanowires have been actively investigated by researchers in lithium ion batteries. We report a method to synthesize silicon nanowire (SiNW) core/carbon shell structures by chemical vapor deposition (CVD), using methane (CH4) as a precursor at growth temperature of $1000{\sim}1100^{\circ}C$. Unlike carbon-based materials synthesized via conventional routes, this method is of advantage of metal-catalyst free growth. We characterized these materials with FE-SEM, FE-TEM, and Raman spectroscopy. This would allow us to use these materials for applications ranging from optoelectronics to energy devices such as solar cells and lithium ion batteries.

  • PDF

Cold spray technology as a potential additive manufacturing (3D 프린팅 공정 관점의 저온분사 기술)

  • Kim, Hyeong-Jun;Yun, Sang-Hun
    • Proceedings of the Korean Institute of Surface Engineering Conference
    • /
    • 2017.05a
    • /
    • pp.90-90
    • /
    • 2017
  • Cold spray (Cold gas dynamic spray, kinetic spray) is the latest spray coating process that is known as solid state deposition process. In cold spray, inert gases (typically nitrogen and helium) accelerate powder particles prior to impact onto the substrate. Accelerating particles start to deposit onto the substrate after reaching certain critical velocities depending on the coating materials and substrate. Since process gas temperatures are kept below to melting temperature of the coating materials, it is possible to spray temperature sensitive materials such as copper and titanium, nanocrystal materials, and amorphous metals without affecting the phase change and oxide formation. It is also possible to deposit thick coatings because cold spray coatings present compressive residual stresses. This ability to deposit thick coatings is suitable to repair or rebuild parts as an additive manufacturing process. In this presentation, cold spray is introduced and compared to other additive manufacturing processes such as laser and electron beam based processes. It is also presented some applications especially in the view point of additive manufacturing process.

  • PDF

Preparation and Electrochemical Properties of Carbon Cryogel for Supercapacitor

  • Song, Min-Seob;Nahm, Sahn;Oh, Young-Jei
    • Journal of the Korean Ceramic Society
    • /
    • v.45 no.11
    • /
    • pp.662-666
    • /
    • 2008
  • Electrochemical properties of carbon cryogel electrode for the application of composite electrode materials mixed with metal oxide in supercapacitor have been studied. Carbon cryogels were synthesized by sol-gel polycondensation of resorcinol with form aldehyde, followed by a freeze drying, and then pyrolysis in an inert atmosphere. Physical properties of carbon cryogel were characterized by BET, X-ray diffraction (XRD) and scanning electron microscopy (SEM). It is found that carbon cryogel is amorphous material. The electrochemical properties of carbon cryogel were measured by cyclic voltammetry as a function of concentration of liquid electrolyte, galvanostatic charge-discharge with different scan rates and electrochemical impedance measurements. The result of cyclic voltammetry indicated that the specific capacitance value of a carbon cryogel electrode was approximately 150.2 F/g (at 5 mV/s in 6M KOH electrolyte).