• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.10
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• pp.595-600
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• 2016

In this paper, the oxide currents of thin silicon oxides is investigated. The oxide currents associated with the on time of applied voltage were used to measure the distribution of voltage stress induced traps in thin silicon oxide films. The stress induced leakage currents were due to the charging and discharging of traps generated by stress voltage in the silicon oxides. The stress induced leakage current will affect data retention in memory devices. The oxide current for the thickness dependence of stress current and stress induced leakage currents has been measured in oxides with thicknesses between $109{\AA}$, $190{\AA}$, $387{\AA}$, and $818{\AA}$ which have the gate area $10^{-3}cm^2$. The oxide currents will affect data retention and the stress current, stress induced leakage current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.428-431
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• 2003

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Proceedings of the IEEK Conference
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• summer
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• pp.209-212
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• 2004

In this paper, The stress induced leakage currents of thin silicon oxides is investigated in the nano scale structure implementation for Soc. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41\square\;and\;113.4\square,$ which have the channel width x length 10x1um, respectively. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.855-858
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• 2001

The stress induced leakage currents of thin silicon oxides is investigated in the VLSI implementation of a self learning neural network integrated circuits using a linearity synapse transistor. The channel current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 41 ${\AA}$, 86${\AA}$, which have the channel width ${\times}$ length 10 ${\times}$1${\mu}$m, 10 ${\times}$0.3${\mu}$m respectively. The stress induced leakage currents will affect data retention in synapse transistors and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor made by thin silicon oxides has represented the neural states and the manipulation which gaves unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the channel current. The stress induced leakage currents affected excitatory state and inhitory state.

• The Journal of Korean Medicine
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• v.17 no.2 s.32
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• pp.277-290
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• 1996

This study was aimed to evaluate the anti-pain effect of Kamikuibitang in acetic acid method and the anti-ulceration effect of Kamikuibitang in indomethacin, aspirin and immobilization stress method in rats. The results were follows; 1. The anti-pain effects of Kuibitang and Kamikuibitang were decreased compared with those of control group. 2. In indomethacin and aspirin method, the anti-ulcerative effects of experimental groups were shown compared with those of control group. 3. In immobilization stress method, the anti-ulcerative effect of experimental groups was significantly shown compared with that of control group. 4. The serum gastrin levels of Kuibitang groups showed very significant decrease in indomethacin-induced and immobilization stress-induced ulcers. The serum gastrin levels of Kamikuibitang groups showed very significant decrease in indomethacin-induced, aspirin- induced and immobilization stress-induced ulcers. 5. The serum $V_{B12}$ levels of Kuibitang groups showed very significant increase in both indomethacin-induced and immobilization stress-induced ulcers. The serum $V_{B12}$ levels of Kamikuibitang groups showed significant increase in aspirin-induced and immobilization stress-induced ulcers whereas very significant increase in indomethacin-induced ulcer. According to the above results, it was concluded that Kamikuibitang had very significant anti-ulceration effect as well as anti-pain effect on gastric ulcer in rats.

• Transactions on Electrical and Electronic Materials
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• v.4 no.6
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• pp.32-37
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• 2003

In this paper, the trap characteristics of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4nm and 814nm, which have the gate area 10$\^$-3/ $\textrm{cm}^2$. The stress induced leakage currents will affect data retention, and the stress current and transient current is used to estimate to fundamental limitations on oxide thicknesses.

• Molecules and Cells
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• v.41 no.11
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• pp.964-970
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• 2018

Atherosclerosis preferentially involves in prone area of low and disturbed blood flow while steady and high levels of laminar blood flow are relatively protected from atherosclerosis. Disturbed flow induces endoplasmic reticulum (ER) stress and the unfolded protein response (UPR). ER stress is caused under stress that disturbs the processing and folding of proteins resulting in the accumulation of misfolded proteins in the ER and activation of the UPR. Prolonged or severe UPR leads to activate apoptotic signaling. Recent studies have indicated that disturbed flow significantly up-regulated $p-ATF6{\alpha}$, $p-IRE1{\alpha}$, and its target spliced XBP-1. However, the role of laminar flow in ER stress-mediated endothelial apoptosis has not been reported yet. The present study thus investigated the role of laminar flow in ER stress-dependent endothelial cell death. The results demonstrated that laminar flow protects ER stress-induced cleavage forms of PARP-1 and caspase-3. Also, laminar flow inhibits ER stress-induced $p-eIF2{\alpha}$, ATF4, CHOP, spliced XBP-1, ATF6 and JNK pathway; these effects are abrogated by pharmacological inhibition of PI3K with wortmannin. Finally, nitric oxide affects thapsigargin-induced cell death in response to laminar flow but not UPR. Taken together, these findings indicate that laminar flow inhibits UPR and ER stress-induced endothelial cell death via PI3K/Akt pathway.

• Korea-Australia Rheology Journal
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• v.19 no.4
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• pp.191-199
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• 2007

Precision injection molding process is of great importance since precision optical products such as CD, DVD and various lens are manufactured by those process. In such products, birefringence affects the optical performance while residual stress that determines the geometric precision level. Therefore, it is needed to study residual stress and birefringence that affect deformation and optical quality, respectively in precision optical product. In the present study, we tried to predict residual stress, final shrinkage and birefringence in injection molded parts in a systematic way, and compared numerical results with the corresponding experimental data. Residual stress and birefringence can be divided into two parts, namely flow induced and thermally induced portions. Flow induced birefringence is dominant during the flow, whereas thermally induced stress is much higher than flow induced one when amorphous polymer undergoes rapid cooling across the glass transition region. A numerical system that is able to predict birefringence, residual stress and final shrinkage in injection molding process has been developed using hybrid finite element-difference method for a general three dimensional thin part geometry. The present modeling attempts to integrate the analysis of the entire process consistently by assuming polymeric materials as nonlinear viscoelastic fluids above a no-flow temperature and as linear viscoelastic solids below the no-flow temperature, while calculating residual stress, shrinkage and birefringence accordingly. Thus, for flow induced ones, the Leonov model and stress-optical law are adopted, while the linear viscoelastic model, photoviscoelastic model and free volume theory taking into account the density relaxation phenomena are employed to predict thermally induced ones. Special cares are taken of the modeling of the lateral boundary condition which can consider product geometry, histories of pressure and residual stress. Deformations at and after ejection have been considered using thin shell viscoelastic finite element method. There were good correspondences between numerical results and experimental data if final shrinkage, residual stress and birefringence were compared.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.27 no.1
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• pp.77-87
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• 2003

The residual stress and birefringence in injection-molded plastic parts can be divided into the flow-induced residual stress and birefringence produced in flowing stage, the thermally-induced residual stress and birefringence produced in cooling stage. However, the physics involved in the generation of the thermally-induced residual stress and birefringence still remains to be understood. Because polymer experiences viscoelastic history near the glass-transition temperature it is hard to model the entire process. Volume relaxation phenomenon was included to predict the final thermally-induced residual stress and birefringence in quenched plastic parts more accurately. The present study focused on comparing the predicted values far thermally-induced residual stress and birefringence with and without volume relaxation behavior (or free volume theory) under free and constrained quenching conditions. As a result, tile residual stress remained as a tensile stress at the center and as a compressible stress near the surface for the free quenching cases. In contract the residual stress remained as a compressible stress at the center and as a tensile stress near the surface fur the constrained quenching cases. The residual birefringence remained as minus values at the center and as plus values near the surface for the free quenching cases. Interestingly the residual birefringence showed minus values in entire zone for the constrained quenching cases. In the prediction of birefringence only the case including free volume theory showed the correct result for the distribution of birefringence in thickness direction.

• Journal of the Institute of Electronics Engineers of Korea TE
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• v.39 no.4
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• pp.335-340
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• 2002

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between 113.4${\AA}$ and 814${\AA}$, which have the gate area $10^3cm^2$. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.