• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.05b
• /
• pp.75-81
• /
• 2003

This study evaporates ZnO layer thickness differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1{\varepsilon}_2)$ has larger peak values as it’s thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Bulletin of the Korean Chemical Society
• /
• v.24 no.3
• /
• pp.274-278
• /
• 2003

New banana-shaped achiral compounds, 1,3-phenylene bis [4-{4-(alkenyloxy) phenyliminomethyl}benzoate]s were synthesized by varying the length of alkenyl group; their ferroelectric properties are described. The smectic mesophases, including a switchable chiral smectic C $(Sm\;C^*)$ phase, were characterized by differential scanning calorimetry, polarizing optical microscopy and triangular wave method. The presence of vinyl groups at the terminals of linear side wings in the banana-shaped achiral molecules containing Schiff's base mesogen induced a decrease in melting temperature and formation of the switchable $(Sm\;C^*)$ phase in the melt. The smectic phases having the octenyloxy group such as $(CH_2)_6CH=CH_2$ showed ferroelctric switching, and their values of spontaneous polarization on reversal of an applied electric field were 120 nC/cm² (X=H) and 225 nC/ cm² (X=F), respectively. We could obtain ferroelectric phases by controlling the number of carbon atom in alkenyloxy chain of a bent-core molecule.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.08a
• /
• pp.73-79
• /
• 2002

This study evaporates ZnO layer thickness' differently with RF sputtering method on Si Wafer(n-100). This study is performed to examine the characteristics of photon energy and dielectric loss according to the thickness of ZnO and increase the reliability and reproduction of ZnO thin film. It is confirmed that the variation of electric Permittivity by frequency is resulted from the formation of particles within thin film, the particle size and the polarization on grain boundary. Peak of electric Permittivity value of thin film has slower and less value in early low wavelength by the coulomb force involved in carrier combination according to the increase of frequency. Reversal of electric Permittivity values is induced by dipole polarization shown in the dielectric of thin film. Complex electric constant $({\varepsilon}_1,{\varepsilon}_2)$ has larger peak values as it's thickness is thinner and then it is larger according to the increase of frequency. Electric Permittivity by photon energy has large value in imaginary number and is reduced exponentially by the increase of carrier density according to that of photon energy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.66-66
• /
• 2007

Lead zirconate titanate (PZT) is one of the most attractive perovskite-type materials for ferroelectric random access memory (FRAM) due to its higher remanant polarization and the ability to withstand higher coercive fields. We first applied the damascene process using chemical mechanical polishing (CMP) to fabricate the PZT thin film capacitor to solve the problems of plasma etching including low etching profile and ion charging. The $0.8{\times}0.8\;{\mu}m$ square patterns of silicon dioxide on Pt/Ti/$SiO_2$/Si substrate were coated by sol-gel method with the precursor solution of PZT. Damascene process by CMP was performed to pattern the PZT thin film with the vertical sidewall and no plasma damage. The polarization-voltage (P-V) characteristics of PZT capacitors and the current-voltage characteristics (I-V) were examined by change of process parameters. To examine the CMP induced damage to PZT capacitor, the domain structure of the polished PZT thin film was also investigated by piezoresponse force microscopy (PFM).

• The Proceeding of the Korean Institute of Electromagnetic Engineering and Science
• /
• v.6 no.1
• /
• pp.10-16
• /
• 1995

The E-polarized scattering problems by a perfect conductor strip grating are analyzed by the method of moments. For an E-polarization the induced surface current density is expected to blow up at the strip both edges. Then the induced surface current density on the strip is expanded in a series of multiplication of Ultraspherical ploynomials with zeroth order and functions with appropriate edge boundary condition. The numerical results for current density and reflection cofficient are compared with other functions, it is shown that numerical results better improves the convergence of the moment method soulutions with general incident angles than the existing several other functions. The sharp variation points in the magnitude of geometric-optical reflection coefficient can be moved by varying the incident angle, strip width, and strip spacing.

• Journal of the Optical Society of Korea
• /
• v.3 no.1
• /
• pp.23-26
• /
• 1999

A simple technique to measure electro-optic coefficients has been developed. It is based on rotating analyzer polarimetry. With a coaxial configuration of the optically active polarizing devices, the synchronously digitized signals are Fourier analyzed to quantitatively determine the elliptical polarization of light and, hence, the electric field induced birefringence. This technique has the advantage that it does not require waveguiding, and since it is improved from the crossed polarizer method it measures the phase retardation directly. It has been applied for the precise determination of electro-optic coefficients of uniaxial LiNbO3 single crystals. The excellent agreeement with reported values confirms its usefulness toward accurate characterization of electro-optic coefficients of unknown specimens.

• Corrosion Science and Technology
• /
• v.17 no.3
• /
• pp.101-108
• /
• 2018

AA7010 is an Al-Zn-Mg-Cu alloy containing Zr, developed as an alternate to traditional AA7075 alloy owing to their high strength combined with better fracture toughness. It is necessary to improve the corrosion resistance and surface properties of the alloy by incorporating plasma electrolytic oxidation (PEO) method. AA7010-T7452 aluminum alloy has been processed through the forging route with multi-stage working operations, and was coated with $10{\mu}m$ thick $Al_2O_3$ ceramic aluminina coating using the plasma electrolytic oxidation (PEO) method. The corrosion, stress corrosion cracking (SCC) and nano-mechanical behaviours were examined by means of potentiodynamic polarization, slow strain rate test (SSRT) and nano-indentation tests. The results indicated that the additional thermomechanical treatment during the forging process caused a fully recrystallized microstructure, which lead to the poor environmental cracking resistance of the alloy in 3.5% NaCl solution, despite the overaging treatment. Although the fabricated PEO coating improved general corrosion resistance, the brittle nature of the coating did not provide any improvement in SCC resistance of the alloy. However, the hardness and elastic modulus of the coating were significantly higher than the base alloy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.14 no.7
• /
• pp.562-566
• /
• 2001

The effects of MnO$_2$ addition on the properties in Pb(Mg$_{1}$3/Nb$_{2}$3/)O$_3$ relaxor ferroelectrics were studied in the phase transition temperature range from -4$0^{\circ}C$ to 11$0^{\circ}C$. Specimens were made via solid state processing method. Dielectric properties, piezoelctric properties, electric-field-induced strain were examined to clarify the effect of MnO$_2$ addition in 0.9MN-0.1PT. As the amount of MnO$_2$ increases, the maximum dielectric constant and the dielectric loss decreases. Q$_{m}$ increased by increasing the doping contents of Mn. When 0.5wt% MnO$_2$ was doped, Q$_{m}$ increased from 95 to 480. The electric-filed-induced strain and polarization decreases as the amount of MnO$_2$ increases. From the experimental results, it was suggested that Mn behaves as an ferroelectric domain pinning element.ent.

• Journal of Magnetics
• /
• v.15 no.2
• /
• pp.51-55
• /
• 2010

The electronic and magnetic properties of Cu-doped GaN with a Cu concentration of 6.25% and 12.5% are examined theoretically using the full-potential linear muffin-tin orbital method. The magnetic moment of Cu atoms decreases with increasing Cu concentration. The spin-polarization of Cu atoms is reduced due to the Cu d-d interaction depending on the distance between the nearest neighbouring Cu atoms. Cu atoms exhibits a clustering tendency in GaN. For Cu-adsorbed GaN thin films with a surface coverage of 0.25, the ferromagnetic state is found to be the energetically favourable state with an induced magnetic moment of $0.54\;{\mu}_B$ per supercell.

• Proceedings of the Optical Society of Korea Conference
• /
• 1990.02a
• /
• pp.162-166
• /
• 1990

Photoinduced anisotropy (PIA) in amorphous As2S3 (a-As2S3 ) thin film, deposited by vacuum evaporation, is investigated. PIA is induced by linearly polarized Ar+ laser beam (λ=514.5nm) and probed by weak Ar+ laser (λ=514.5nm) and He-Ne laser (λ=632.8nm) beam through the crossed analyzer. Keeping pump beam intensity constantly, rotation of pump beam polarization direction induces reorientation phenomina of anisotropic axis. Introducing directional factor into simplified 3-level system, which is used to analyze photodarkening phenomina, an analytical expression of PIA is derived. Temporal behavior of PIAand its reorientation phenomina are investigated andcompared with theory. In the experiment pump beam intensity is 100mW/$\textrm{cm}^2$ and thickness of a-As2S3 thin film is 3${\mu}{\textrm}{m}$. In those condition, time constant of photoinduced anisotropy obtained by method of least square curve fitting is 4.0$\times$10-2sec-1. The time constant of PIA we obtained is larger than that of photodarkening, 2.8$\times$10-2sec-1.