• 반도체디스플레이기술학회지
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• 제19권4호
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• pp.88-93
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• 2020

Based on the capture-emission energy (CEE) maps of CMOS devices, a physics-informed machine learning model for the bias temperature instability (BTI)-induced threshold voltage shifts and low frequency noise is presented. In order to incorporate physics theories into the machine learning model, the integration of artificial neural network (IANN) is employed for the computation of the threshold voltage shifts and low frequency noise. The model combines the computational efficiency of IANN with the optimal estimation of Gaussian mixture model (GMM) with soft clustering. It enables full lifetime prediction of BTI under various stress and recovery conditions and provides accurate prediction of the dynamic behavior of the original measured data.

• 대한전기학회논문지
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• 제37권12호
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• pp.903-913
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• 1988

본 논문의 전기철도의 AT급전방식에서 통신선에 미치는 유도장해에 관하여 컴토하엿다. 전기철도에서 통신선에 대한 유도장애는 상시 유도전압과 고장시 이상유도전압 및 잡음유도전압이 있다. 이 논문은 AT급전방식에서 통신선에 미치는 유도전압을 계산하는 앨고리즘을 도출하였으며 급전선 지락 사고시에 지락전류 계산 알고리즘을 유도하였다. 이 유도된 알고리즘을 이용하여 컴퓨터나 프로그램 팩키지화 하였다. 이 개발된 컴퓨터 프로그램 팩키지는 모의 시스템에 적용하여 그 타당성을 검증하였으며 AT급전방식에서 통신선에 대한 적절한 보호대책을 제시 및 평가할 수 있도록 하였다. 이 팩키지 프로그램은 전기철도 부설시 또는 통신선을 전기철도에 인접하여 가설시 적절한 보호대책을 평가 할 수 있으므로 아주 유용하게 이용되리라 기대된다.

• 전기학회논문지
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• 제57권11호
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• pp.2035-2040
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• 2008

The electrical discharge of high voltage direct current(HVDC) overhead transmission line generate audible noise, radio noise, electric field, ion current and induced voltage on the ground. These items are major factors to design environmentally friendly configuration of DC transmission line. Therefore, HVDC transmission lines must be designed to keep all these corona effects within acceptable levels. Several techniques have been used to assess interference caused by ions on HVDC overhead transmission line. In this study, to assess the ion characteristic of DC line, the ion current density and induced voltage caused by ion flow were measured by plate electrodes manufactured from a metal flat board and charged bodies, respectively. The charged body has two types of cylinder and cylindrical plate. From the results of calibration experiments, the sensitivity of flat electrode and charged body can be obtained. At present, the developed system is used to investigate the ion generation characteristics of Kochang DC ${\pm}500kV$ test line.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2004년도 하계종합학술대회 논문집(2)
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• pp.465-468
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• 2004

In this paper, we describe the design and implementation of the new current-current negative feedback (CCNF) voltage-controlled oscillator (VCO), which suppresses 1/f induced low-frequency noise. By means of the CCNF, the high-frequency noise as well as the low-frequency noise is prevented from being converted into phase noise. The proposed CCNF VCO shows 11-dB reduction in phase noise at 10 kHz offset, compared with the conventional differential VCO. The phase noise of the proposed VCO is -87 dBc/Hz at 10 kHz offset frequency from 5.5-GHz carrier. The proposed VCO consumes 14.0 mA at 2.0 V supply voltage, and shows single-ended output power of -12.0 dBm.

• 한국정보통신학회논문지
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• 제18권9호
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• pp.2176-2182
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• 2014

이 논문에서는 기존의 위상고정루프에 전원 잡음 제거 회로를 추가한 위상고정 루프 회로를 제안한다. 제안한 구조는 주파수 전압 변환기를 변형한 전원 잡음 제거 회로를 사용하여 임의의 전원 잡음에 대해 보상하여 동작한다. 전원 잡음 제거 회로를 사용하여 전원 잡음에 의해 발생하는 지터의 크기를 1/3로 줄였다. 제안한 위상 고정 루프는 0.18um CMOS 공정을 사용 하여 HSPICE 시뮬레이션을 통해 예측되는 결과를 검증하였다.

• 전기학회논문지
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• 제58권3호
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• pp.431-436
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• 2009

As the telecommunication lines bring into widespread use, one of the most important aspects related to power distribution systems is effectively to evaluate the effect on the telecommunication lines from power lines. One of the efficient methods to evaluate the effect is to measure the induced voltage of a telecommunication line as a result of a ground-loop. If the power lines cause high induced voltage, the ground reference in the telecommunication lines is no longer a stable potential, so signals may ride on the noise. A ground loop is common wiring conditions where a ground current may take more than one path to return to the grounding electrode at the arrangement between the power lines and telecommunication lines. When a multi-path connection between the power lines and telecommunication line circuits exists, the resulting arrangement is known as a ground loop. Whenever a ground loop exists, there are potential for damages or abnormal operations of the telecommunication lines. The power lines can induce the voltage on the communication line. The effects can be calculated by considering the inductances and capacitances. However, if we assume that there are only power lines, it doesn't have a practical meaning because there are conductors with other purpose in the neighborhood of the lines. If we consider that case, we need more complex system. Therefore we suggest more complex system considering the conductors with other purpose in the neighborhood of the lines. The neutral wires and the overhead ground wires are considered for calculating the induced voltage. We assume that there are the messenger wires beside the power line as a result of increased use of them. The main purpose of this paper is a study on a shielding effect of messenger wires in the distribution lines. EMTP(Electro-Magnetic Transients Program) program is used for the induced voltage calculation.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 V
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• pp.2835-2838
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• 2003

We study the characteristics of oscillating in non-autonomous condition and the conducted noise generation in a RL-photocoupler circuit. This circuit may be shown a period-doubling and a chaos dynamics under any specific conditions of input circuit. But, the relationship between input signals and output signals is different according to the amplitude of driving input voltage. Then, the oscillation noise was analyzed with respect to both the frequency and the amplitude of an external ac signal and do values. The results show that the noise-induced oscillations for falling and rising cycles induced by kick-back effect in an inductor, nonlinear capacitance, nonlinear resistance and charge storage time in a diode and an LED. We also compared the simulation with the experimental results.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1987년도 정기총회 및 창립40주년기념 학술대회 학회본부
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• pp.454-456
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• 1987

A more specialized area of transient evaluations is transmission line fault-detecting and protection system. During the first cycle or two following a power system fault, a high-speed protective relay is expected to make a decision as to the severity or location of the fault, usually based on 60 Hz information, i.e. the phase and magnitude of 60 Hz voltage or current signals. It is precisely at this time however that the signal is badly corrupted by noise, in the form of a de offset or frequencies above 50 Hz. One of several possible sources of transients in protection measuring signals is in the primary system for which protection is required in its response to the impact of short circuit fault on-set. Other sources are in the primary voltage and current transducers from which protection signals are derived, and, often of particular importance, in the interface circuits between the transducer secondaries and the comparator and measuring elements of the protection system. However, the noise signals that will be described in this paper are due to the main power system only and do not include errors due to current or voltage transducers.

• 조명전기설비학회논문지
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• 제21권10호
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• pp.181-189
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• 2007

본 논문에서는 전기철도에서 발생하는 대지전위와 통신회선의 잡음에 대한 실험적 증명에 관한 것이다. 대지전위차가 발생하는 곳에서 전력유도잡음전압과 케이블 평형도 등을 측정할 경우 계측 오차가 심각하게 발생되는 것으로 나타났다. 측정결과, 고속철도 인접한 곳의 통신케이블은 시스층에 지전류가 많이 흐르는 차폐 케이블보다 일반 케이블을 그대로 사용하는 것이 잡음피해를 보다 줄일 수 있음이 실험 결과로 확인 되었다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.533-533
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• 2007

The stress effect of SiGe p-type metal oxide semiconductors field effect transistors(MOSFETs) has been investigated to compare device properties using Si bulk and partially depleted silicon on insulator(PD SOI). The electrical properties in SiGe PD SOI presented enhancements in subthreshold slope and drain induced barrier lowering in comparison to SiGe bulk. The reliability of gate oxides on bulk Si and PD SOI has been evaluated using constant voltage stressing to investigate their breakdown (~ 8.5 V) characteristics. Gate leakage was monitored as a function of voltage stressing time to understand the breakdown phenomena for both structures. Stress induced leakage currents are obtained from I-V measurements at specified stress intervals. The 1/f noise was observed to follow the typical $1/f^{\gamma}$ (${\gamma}\;=\;1$) in SiGe bulk devices, but the abnormal behavior ${\gamma}\;=\;2$ in SiGe PD SOI. The difference of noise frequency exponent is mainly attributed to traps at silicon oxide interfaces. We will discuss stress induced instability in conjunction with the 1/f noise characteristics in detail.