• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.390.2-390.2
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• 2016

Single crystalline indium-tin-oxide (ITO) nanowires (NWs) were grown by sputtering method. A thin Ni film of 5 nm was coated before ITO sputtering. Thermal treatment forms Ni nanoparticles, which act as templates to diffuse Ni into the sputtered ITO layer to grow single crystalline ITO NWs. Highly optical transparent photoelectric devices were realized by using a transparent metal-oxide semiconductor heterojunction by combining of p-type NiO and n-type ZnO. A functional template of ITO nanowires was applied to this transparent heterojunction device to enlarge the light-reactive surface. The ITO NWs/n-ZnO/p-NiO heterojunction device provided a significant high rectification ratio of 275 with a considerably low reverse saturation current of 0.2 nA. The optical transparency was about 80% for visible wavelengths, however showed an excellent blocking UV light. The nanostructured transparent heterojunction devices were applied for UV photodetectors to show ultra fast photoresponses with a rise time of 8.3 mS and a fall time of 20 ms, respectively. We suggest this transparent and super-performing UV responser can practically applied in transparent electronics and smart window applications.

• 한국응용과학기술학회지
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• 제34권4호
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• pp.705-716
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• 2017

본 연구에서는 0.5, 1.0, 1.5 wt%의 $TiO_2$를 함유하는 인듐-티타늄 수산화물을 졸 및 염기 첨가에 의해 얻었고, $200^{\circ}C$와 $500^{\circ}C$에서 겔화 과정을 통해 ITiO(Indium Titanate Oxide)를 얻었다. $200^{\circ}C$에서 겔화 과정 후 얻어지는 ITiO 입자가 작아서 조밀성이 있는 ITiO 타겟을 제조하였다. 0.5, 1.0, 1.5 wt%의 $TiO_2$를 함유하는 ITiO 타겟을 스퍼터링하여 ITiO 박막을 유리판위에 제작하여 비저항, 전하 이동도, 캐리어 농도를 조사하였다. 이들 박막 중에서 산소 조성이 0.4 %인 조건에서 0.5 wt% 중량% $TiO_2$를 함유하는 ITiO 타겟으로부터 제작된 ITiO 박막이 가장 낮은 비저항, 가장 큰 전하이동도 및 가장 낮은 캐리어 농도를 보임을 알 수 있었고, 얻어진 ITiO 박막의 광투과율을 측정하여 적외선 영역에서 광투과율이 ITO(Indium Tin Oxide) 박막에 비해 현저히 증가함을 발견하였다.

• 센서학회지
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• 제4권2호
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• pp.51-57
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• 1995

Indium Tin Oxide (ITO) 박막을 $In_{2}O_{3}$(90mol%) : $SnO_{2}$(10mo1%)의 조성비를 가지는 타겟을 사하여 rf 마그네트론 스퍼터링 법으로 제작하였다. 기판온도 100, 200, 300, 400, $500^{\circ}C$ 와 열처리 온도 300, 400, $500^{\circ}C$로 변화시켜 주면서 제작하였으며 X-ray 회절 패턴, 전기적 특성, 투과도, SEM 사진 등으로 분석하였다. 그 결과 기판온도를 증가시킬수록 결정성, 전기 전도도와 투과도가 향상되었다. 그러나 공기 중에서 열처리 온도를 증가함에 따라 도리어 전도도는 감소하였다. 기판온도 $300^{\circ}C$ 이상에서 $3000\;{\AA}$ 두께를 가지고 성장된 ITO 박막은 약 $2{\times}10^{-4}{\Omega}cm$의 저항률과 85% 이상의 가시광 투과율을 가졌다.

• 전기전자학회논문지
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• 제20권4호
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• pp.392-397
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• 2016

본 논문에서는 투명 전극용 ITO(Indium Tin Oxide) 박막의 성막 조건을 알아내기 위하여 DC(Direct Current) 마그네트론 스퍼터를 사용해 증착된 ITO 박막의 특성을 분석하였다. 실험 조건은 1~3[mTorr] 분위기압으로 조절하고 인가전압은 260~330[V]로 10[V]씩 스텝을 주어 실험을 진행하였다. 증착된 박막의 투과율, 굴절률 및 표면과 단면 형상을 자외선-가시광선 분광광도계, 타원편광분석기와 주사전자현미경으로 측정하였다. ITO 성막 조건 1~2[mTorr] 분위기압에서 300[V] 정도의 전압이 투과율이 90[%] 이상으로 우수하고 굴절률이 2이상 이였다. 따라서 높은 투명 전도성 전극을 만들기에 적절한 조건임을 확인하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 추계학술발표강연 및 논문개요집
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• pp.234-234
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• 2003

Indium tin oxide(ITO) is an advanced ceramic material with many electronic and optical applications due to its high electrical conductivity and transparency to light ITO thin films are used in transparent electrodes for display devices, transparent coatings for solar energy heat mirrors and windows films in n-p heterojunction solar cells, etc. Almost all display devices were fabricated on transparent ITO electrode substrates. There are several factors that cause decay in the efficiency and the failure of display devices. The degradation or damage of ITO is one of the main factors. Under normal operating conditions, the electric fold required for the operation of display devices is very high As a high electric field induces the joule heat, the degradation of the ITO thin film may be expected. Therefore, it is worthy to investigate the thermal and electrical effect on ITO thin films.

• Journal of Information Display
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• 제2권2호
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• pp.52-60
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• 2001

The electrical and mechanical properties in indium-tin-oxide films deposited on polymer substrate were examined. The materials of substrates were polyethersulfone (PES) which have gas barrier layer and anti-glare coating for plastic-based devices. The experiments were performed by rf-magnetron sputtering using a special instrument and buffer layers. Therefore, we obtained a very flat polymer substrate deposited ITO film and investigated the effects of buffer layers, and the instrument. Moreover, the influences of an oxygen partial pressure and post-deposition annealing in ITO films deposited on polymer substrates were clarified. X-ray diffraction observation, measurement of electrical property, and optical microscope observation were performed for the investigation of micro-structure and electro-mechanical properties, and they indicated that as-deposited ITO thin films are amorphous and become quasi-crystalline after adjusting oxygen partial pressure and thermal annealing above $180^{\circ}C$. As a result, we obtained 20-25 ${\Omega}/sq$ of ITO films with good transmittance (above 80 %) of oxygen contents with under 0.2 % and vacuum annealing. Furthermore, using organic buffer layer, we obtained ITO films which have a rather high electrical resistance (40-45 ${\Omega}/sq$) but have improved optical (more than 85 %) and mechanical characteristics compared to the counterparts. Consequently, a prototype reflective color plastic film LCD was fabricated using the PES polymer substrates to confirm whether the ITO films could be realized in accordance with our experimental results.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2006년도 춘계학술대회 논문집
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• pp.479-480
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• 2006

The purpose of this paper is to investigate the relationship between CMP(Chemical Mechanical Polishing) characteristics of ITO thin film and friction signal by using the CMP monitoring system. Suba 400 pad and MSW2000 slurry of the Rohm & Haas Co. was used in this experiment to investigate the charateristics of ITO CMP. From this experiment, it is proven that the coefficient of friction is related to uniformity of the removal rate of the ITO thin film. Therefore, the prediction of polishing result would be possible by measuring friction signal.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.427-431
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• 2000

ITO (indium tin oxide) thin films on PET (polyethylene terephthalate) and glass substrates have been deposited by a dc magnetron sputtering without heat treatments such as substrate heater and post heat treatment. Each sputtering parameter during the sputtering deposition is an important factor for the high quality of ITO thin films deposited on polymeric substrate. Particularly, the material, electrical and optical properties of as-deposited ITO oxide films are dominated by sputtering power, oxygen partial pressure and films thickness. As the experimental results, the XRD patters of ITO films are influenced by sputtering power and pressure. As the power and pressure are increased, (411) peak is grown suddenly. the electrical resistivity is also increased, as the sputteing power and pressure are increased. Transmittance of ITO thin films in visible light ranges is lowered with increasing the sputtering power and film thickness. Reflectance of ITO films in infia-red region is decreased, as the power and pressure is increased.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.547-550
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• 2004

Indium tin oxide(ITO) films were prepared as a function of varying the proportion of oxygen$[0{\sim}1.0sccm]$ at fixed he gas[20sccm] by facing targets sputtering(FTS) system. Then electrical and optical properties of ITO thin films were estimated by Hall effect measurement system and UV/VIS-spectrometer. In the result, at very little oxygen rate, we can prepare a low resistivity ITO thin film of $3.40{\times}10^{-4}[\Omega{\cdot}cm]$ and transmittance of over 80%. So we noticed that the ITO thin film with low resistivity and high transmittance was prepared by FTS at room temperature.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.