• Membrane and Water Treatment
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• 제8권3호
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• pp.211-223
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• 2017

In this work, an attempt was made to compare the effects of UV irradiation on the intrinsic and separation properties of membranes made of two different polymeric materials, i.e., polyvinylidene fluoride (PVDF) and polyetherimide (PEI). The changes on membrane structural morphologies and chemical characteristics upon UV-A exposure (up to 60 h) were studied by FESEM and FTIR, respectively. It was found that cracks and fractures were detected on the PVDF-based membrane surface when the membrane was exposed directly to UV light for up to 60 h. Furthermore, the mechanical strength and thermal stability of irradiated PVDF-based membrane was reported to decrease with increasing UV exposure time. The PEI membrane surface meanwhile remained almost intact throughout the entire UV irradiation process. Filtration experiments showed that the permeate flux of UV-irradiated PVDF membrane was significantly increased from approximately 11 to $16L/m^2.h$ with increasing UV exposure time from zero to 60 h. Oil rejection meanwhile was decreased from 98 to 85%. For the PEI-based membrane, oil rejection of >97% was recorded and its overall structural integrity was marginally affected throughout the entire UV irradiation process. The findings of this work showed that the PEI-based membrane should be considered as the host for photocatalyts incorporation if the membrane was to be used for UV-assisted wastewater treatment process.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 춘계학술대회 논문집
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• pp.819-823
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• 1996

In the large steel ingosts, void defects exhibiting microvoid shapes are inevitably formed in the V-segregation zone of the ingots during solidification. In the hot open-die forging process, material properties are improved by eliminating internal porosity. The void size is practically very small as compared with the huge large ingot. Thus, for deformation analysis of a large ingot, a massive number of elements are needed in order to describe a void surface and to uniform mesh sturcture. In the present work the Global/Local scheme has been introduced in order to reduce the computational time and to easily generate the mesh system as a void module of local mesh for obtaining the accurate solution around a void. The procedure of the global- local method consists of two steps. In the first step global analysis is carried out which seeks a reasonably good solution with a cpurse mesh system without describing a void. Then, a local analysis is performed locally with a fine mesh system under the size-criterion of a local region. The computational time has been greatly reduced. Though the work it has been shown that large ingot forging incorporation small voids can be effectively analyzed by using the proposed Global/Local scheme.

• Applied Science and Convergence Technology
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• 제26권5호
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• pp.133-138
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• 2017

We investigated the interface defect engineering and reaction mechanism of reduced transition layer and nitride layer in the active plasma process on 4H-SiC by the plasma reaction with the rapid processing time at the room temperature. Through the combination of experiment and theoretical studies, we clearly observed that advanced active plasma process on 4H-SiC of oxidation and nitridation have improved electrical properties by the stable bond structure and decrease of the interfacial defects. In the plasma oxidation system, we showed that plasma oxide on SiC has enhanced electrical characteristics than the thermally oxidation and suppressed generation of the interface trap density. The decrease of the defect states in transition layer and stress induced leakage current (SILC) clearly showed that plasma process enhances quality of $SiO_2$ by the reduction of transition layer due to the controlled interstitial C atoms. And in another processes, the Plasma Nitridation (PN) system, we investigated the modification in bond structure in the nitride SiC surface by the rapid PN process. We observed that converted N reacted through spontaneous incorporation the SiC sub-surface, resulting in N atoms converted to C-site by the low bond energy. In particular, electrical properties exhibited that the generated trap states was suppressed with the nitrided layer. The results of active plasma oxidation and nitridation system suggest plasma processes on SiC of rapid and low temperature process, compare with the traditional gas annealing process with high temperature and long process time.

• 한국작물학회지
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• 제50권2호
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• pp.67-72
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• 2005

Overwintering capacity, closely related to winter hardiness, of Chinese milk vetch planted with different sowing times and sowing practices was investigated to improve the incorporation into cropping system in Korea. The tolerance to low temperature was evaluated with $LT_50$ using leaf disc leaching method. Dry weight of CMV was reduced remarkably with delayed planting from Sep. 5 to Oct. 20. The differences in tolerance to freezing temperature were not conspicuous among CMV genotypes, however, the differences between genotype (collections at different regions) were due to the plant architecture, mainly to the leaf angle. The crouching genotype collected at central region of Korean peninsula, which showed excellent freezing tolerant, has planophile leaves. The feature of internal constituents of CMV genotypes did not show any noticeable differences with respect to the freezing tolerance which evaluated by leaf disc leaching experiment. To overcome the poor overwintering capacity, tolerant genotype should be developed by selection with considering the plant architecture. The reduction of CMV growth during overwintering period was ameliorated with furrow-sowing under late-sown condition, therefore, when the CMV is inevitably sown late after recommended time, the seeds should be sown on furrow to overcome the cold stress.

• 한국통신학회논문지
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• 제25권5A호
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• pp.668-673
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• 2000

본 논문에서는 센트럴 모우먼트 알고리즘을 디지틀 통신 채널에 적용함으로써 기존의 시뮬레이션인 기법인 Conventional Importance Samping와 Improved Importance Sampling 으로 해결할 수 없었던 문제점들의 해결 뿐 아니라 수행시간의 획기적인 개선도 가능하게 하였다. 즉 디지털 통신 채널의 수신단에서 잡음이 혼합된 수신신호의 센트랄 모우멘트를 측정하여 수신 신호의 확률적인 특성인 누적확률분포를 구함으로써 채널의 성능을 평가한다. 제안 알고리즘을 검증하기 위하여 Cadence사의 시뮬레이션 프로그램인 SPW를 이용하여 QPSK 위성통신 채널을 구현한 후 시뮬레이션 수행시간의 개선 효과를 확인하였다.

• Elastomers and Composites
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• 제43권2호
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• pp.104-112
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• 2008

통상적인 고무블렌드 방법에 따라 개방식 2-롤밀을 사용하여 ethylene propylene diene terpolymer (EPDM)과 styrene butadiene rubber (SBR) 블렌드 배합물을 제조하여, 이들의 경화 특성, 기계적 성질 및 내오존성 등을 검토하였다. SBR함량이 증가할수록 가황곡선의 토크가 증가하였다. 최대 토크는 SBR 25wt% 일 때 가장 낮았으며 그 이상의 SBR 량에서는 직선적으로 증가하였다. 스코치시간 및 최적경화시간은 SBR고무 함량이 증가함에 따라 감소하였다. 경도는 SBR 함량이 50wt% 일 때 최고값을 보였으며 그 전후에서는 감소하는 경향을 보였다. 내오존시험에 있어서 소량의 EPDM 고무의 첨가에 의하여 내오존성이 크게 개선됨을 확인할 수 있었다.

• 한국전기전자재료학회논문지
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• 제16권8호
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• pp.657-662
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• 2003

This paper presents a new fabrication method of selective SiGe epitaxial growth at 650 $^{\circ}C$ on (100) silicon wafer with oxide patterns by reduced pressure chemical vapor deposition. The new method is characterized by a cyclic process, which is composed of two parts: initially, selective SiGe epitaxy layer is grown on exposed bare silicon during a short incubation time by SiH$_4$/GeH$_4$/HCl/H$_2$system and followed etching step is achieved to remove the SiGe nuclei on oxide by HCl/H$_2$system without source gas flow. As a result, we noted that the addition of HCl serves not only to reduce the growth rate on bare Si, but also to suppress the nucleation on SiO$_2$. In addition, we confirmed that the incubation period is regenerated after etching step, so it is possible to grow thick SiGe epitaxial layer sustaining the selectivity. The effect of the addition of HCl and dopants incorporation was investigated.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2002년도 추계학술대회 발표 논문집
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• pp.81-84
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• 2002

The effects of the isoelectronic AI-doping of GaN grown by metal organic chemical vapor deposition were investigated for the first time using scanning electron microscopy (SEM), Hall measurements, photoluminescence (PL), and time-resolved PL. When a certain amount of Al was incorporated into the GaN films, the room temperature photoluminescence intensity of the films was approximately two orders larger than that of the undoped GaN. More importantly, the electron mobility significantly increased from 130 for the undoped sample to $500\textrm{cm}^2/Vs$ for the sample grown at a TMAl flow rate of $10{\mu}mol/min$, while the unintentional background concentration only increased slightly relative to the TMAl flow. The incorporation of Al as an isoelectronic dopant into GaN was easy during MOCVD growth and significantly improved the optical and electrical properties of the film. This was believed to result from a reduction in the dislocation-related non-radiative recombination centers or certain other defects due to the isoelectronic Al-doping.

• Nuclear Engineering and Technology
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• 제40권5호
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• pp.349-364
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• 2008

Over the years, probabilistic risk assessment (PRA) research activities conducted at the U.S. Nuclear Regulatory Commission (NRC) have played an essential role in support of the agency's move towards risk-informed regulation. These research activities have provided the technical basis for NRC's regulatory activities in key areas; provided PRA methods, tools, and data enabling the agency to meet future challenges; supported the implementation of NRC's 1995 PRA Policy Statement by assessing key sources of risk; and supported the development of necessary technical and human resources supporting NRC's risk-informed activities. PRA research aimed at improving the NRC's understanding of risk can positively affect the agency's regulatory activities, as evidenced by three case studies involving research on fire PRA, human reliability analysis (HRA), and pressurized thermal shock (PTS) PRA. These case studies also show that such research can take a considerable amount of time, and that the incorporation of research results into regulatory practice can take even longer. The need for sustained effort and appropriate lead time is an important consideration in the development of a PRA research program aimed at helping the agency address key sources of risk for current and potential future facilities.

• 센서학회지
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• 제13권1호
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• pp.47-55
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• 2004

This paper presents drug release properties of active drug delivery system (DDS) using volume change of polypyrrole (PPy). The incorporation of various chemical substances into the PPy and controlling its release with the externally applied voltage to the PPy are possible. In order to confirm possibility for drug delivery system qualitatively, indicator(phenol red) was examined as a dopant of PPy. The applied voltage to the PPy electrode was set to -2 V and this negative voltage makes the anionic indicator released in saline solution. After qualitative analysis, in order to confirm quantitative drug release characteristic of PPy, salicylate which is one of the aspirin substance was used as a dopant of PPy. As a result, the salicylate release characteristics with time was thoroughly investigated while varying the electrode area, polymerization time, the applied voltage for drug release. Based on these quantitative results, a preliminary experiment was carried out to check the feasibility of the PPy applicable to the neuronal system.