• Near Infrared Analysis
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• 제1권2호
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• pp.9-20
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• 2000

Recently, near-infrared (NIR) spectroscopy and Raman spectroscopy have received keen interest as powerful techniques for nondestructive analysis of biological materials. The purpose of this review paper is to compare the advantages of NIR and Raman spectroscopy in the nondestructive analysis. Both methods are quite unique and often complementary. For example. NIR spectroscopy is very useful in monitoring in situ the content of components inside biological materials while Raman spectroscopy is very suitable for identifying micro-components on the surface of biological materials. In this article specific characters of the two spectroscopic methods are discussed first and then several examples of applications of NIR and Raman spectroscopy to the biological nondestructive analysis are introduced.

• 한국표면공학회지
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• 제57권2호
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• pp.71-85
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• 2024

This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

• 마이크로전자및패키징학회지
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• 제23권4호
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• pp.19-24
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• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.

• 한국진공학회지
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• 제12권S1호
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• pp.49-51
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• 2003

Amorphous hydrous ruthenium oxide thin films have attracted much interest owing to the possibility of using this material in electrochemical supercapacitors. Recently, it was found that this material is also electrochromic: during the charging/discharging cycle, the optical transmittance of the thin film is modulated. The physical and chemical origin of this phenomenon is not fully understood yet. In this work, we performed in-situ Raman spectroscopy measurements on amorphous hydrous ruthenium oxide thin films during the charging/discharging cycles. Unambiguous changes in the Raman spectrum were observed as protons were injected or extracted from the thin film. When the samples were annealed to reduce the water content, there is a consistent trend in the Raman spectrum. The origins of the Raman features and their relation to the electrochromic and/or supercapacitor characteristics is discussed.

• 한국결정성장학회지
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• 제10권2호
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• pp.116-121
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• 2000

도립형 OMVPE 반응기 내부의 기상 온도분포와 OMVPE 전구체들의 농도분포를 in-situ Raman 분광법으로 조사하였다. 운반기체의 회전 Raman 스펙트럼 분석을 통해 반응기 내부의 온도 분포를 측정하였고, 기판 근처에 수직적 온도 구배가 형성됨을 확인할 수 있었다. 또한 진동 Raman 스펙트럼 해석으로부터 전구체의 열분해도를 관찰살 수 있었다. $NH_3$의 경우 800 K 근처에서, TMGa의 경우 650 K 근처에서 열분해가 시작됨을 알 수 있었고, 기판에 매우 근접한 지역에서도 상당량의 전구체가 분해되지 않은 상태로 잔류함을 알 수 있었다.

• Korean Chemical Engineering Research
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• 제47권3호
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• pp.287-291
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• 2009

전도된 정체점 흐름을 갖는 반응기 안의 가열된 석영(quartz) 표면에서 암모니아($NH_3$)가 분해되는 반응을 실험과 수치 모사을 이용하여 조사하였다. 질소($N_2$)와 혼합된 8 mole%의 암모니아를 사용하였고 반응 표면으로 사용된 석영 표면을 가열하기 위한 전열기의 온도는 $300{\sim}900^{\circ}C$ 범위로 설정하였다. 라만 분광법(in situ Raman spectroscopy)을 이용하여 획득한 반응기 내부의 온도와 암모니아 농도 정보를 반응기 모델을 이용하여 분석한 결과, 전열기의 온도 설정에 의존하는 석영 표면의 온도는 $235{\sim}619^{\circ}C$ 범위였으며 암모니아 분해 반응의 활성화 에너지는 10.9~15.8 kcal/mol 범위를 가졌다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.277-277
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• 2013

The epitaxial graphene on the 4H- or 6H-SiC(0001) surface has been intensively studied due to the possibility of wafer-scale growt. However the existence of interface layer (zero layer graphene) and its influence on the upper graphene layer have been considered as one of the main obstarcles for the industrial application. Among various methods tried to overcome the strong interaction with the substrate through the interface layer, it has been proved that the hydrogen intercalation successfully passivate the Si dangling bond of the substrate and can produce the quasi-free standing epitaxial graphene (QFEG) layers on the siC(0001) surface. In this study, we report the results of the angle-resolved photoemission spectroscopy (ARPES) and Raman spectroscopy for the QFEG layers produced by ex-situ and in-situ hydrogen intercalation.From the ARPES measurement, we confirmed that the Dirac points of QFEG layers exactly coincide with the Fermi level. The band structure of QFEG layer are sustainable upon thermal heating up to 1100 K and robust against the deposition of several metals andmolecular deposition. We also investigated the strain of the QFEG layers by using Raman spectroscopy measurement. From the change of the 2D peak position of graphene Raman spectrum, we found out that unlike the strong compressive strain in the normal epitaxial graphene on the SiC(0001) surface, the strain of the QFEG layer are significantly released and almost similar to that of the mechanically exfoliated graphene on the silicon oxide substrate. These results indicated that various ideas proposed for the ideal free-standing graphene can be tested based on the QFEG graphene layers grown on the SiC(0001) surface.

• Corrosion Science and Technology
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• 제3권5호
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• pp.198-208
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• 2004

Although there has been no general agreement on the mechanism of primary water stress corrosion cracking (PWSCC) as one of major degradation modes of Ni-base alloys in pressurized water reactors (PWR's), common postulation derived from previous studies is that the damage to the alloy substrate can be related to mass transport characteristics and/or repair properties of overlaid oxide film. Recently, it was shown that the oxide film structure and PWSCC initiation time as well as crack growth rate were systematically varied as a function of dissolved hydrogen concentration in high temperature water, supporting the postulation. In order to understand how the oxide film composition can vary with water chemistry, this study was conducted to characterize oxide films on Alloy 600 by an in-situ Raman spectroscopy. Based on both experimental and thermodynamic prediction results, Ni/NiO thermodynamic equilibrium condition was defined as a function of electrochemical potential and temperature. The results agree well with Attanasio et al.'s data by contact electrical resistance measurements. The anomalously high PWSCC growth rate consistently observed in the vicinity of Ni/NiO equilibrium is then attributed to weak thermodynamic stability of NiO. Redox-induced phase transition between Ni metal and NiO may undermine the integrity of NiO and enhance presumably the percolation of oxidizing environment through the oxide film, especially along grain boundaries. The redox-induced grain boundary oxide degradation mechanism has been postulated and will be tested by using the in-situ Raman facility.

• 헤리티지:역사와 과학
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• 제56권4호
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• pp.216-228
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• 2023

본 연구는 대형불화 현장 조사에 비파괴 조사장비 중 하나인 휴대용 라만 분광기를 적용하고 그 결과를 HH-XRF 데이터와 상호 비교하여 장곡사 미륵불 괘불탱에 사용된 채색 재료를 동정하였다. 대형불화에 사용된 채색 재료 분석시, 현장에서 주로 휴대용 현미경과 HH-XRF를 이용한다. 하지만 채색 재료가 경원소로 구성되어 있거나 여러 안료가 중첩 또는 혼합 채색된 경우, 비파괴 분석 데이터만으로는 해석에 한계가 있다. 또한 문화유산이라는 특성상 수습할 수 있는 시료의 양은 제한적이어서 XRD, SEM-EDS 및 라만 분광을 이용한 정밀 분석을 수행하는데 어려움이 있다. 따라서 현장 조사 시 HH-XRF 분석 데이터를 보완할 분석기술이 필요하다. 장곡사 미륵불 괘불탱을 대상으로 백색, 적색, 황색, 녹색, 청색 색상별 채색 재료에 대하여 HH-XRF로 성분을 분석하고 휴대용 라만 분광기를 적용하여 분자구조를 확인하였다. 분석결과, 백색은 연백, 적색은 진사, 석간주, 황색은 등황, 석황, 녹색은 염화동, 청색은 쪽이 사용된 것을 확인할 수 있었다. 휴대용 라만 분광기를 적용함으로써 데이터에 대한 교차검증뿐 아니라 HH-XRF로 확인이 어려웠던 혼합 채색된 안료에 대한 식별과 유기안료에 대한 정보를 획득하는데 도움이 되었다. 또한 대형불화 등 회화문화유산의 비파괴 현장 조사에 휴대용 라만이 다양하게 활용될 수 있을 것으로 판단된다.

• 전기화학회지
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• 제5권4호
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• pp.221-225
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• 2002

Assisted by the highly sensitive confocal microprobe Raman spectrometer and proper surface roughening procedure, the Raman investigation on the adsorption and reaction of methanol was performed on Pt-Ru electrodes with different coverages. A detailed description of the roughening process of the Pt electrodes and the underpotential deposition of the Ru was given. Reasonably good Raman signal reflecting the metal-carbon vibration and CO vibration was detected. The appearance of vibrations of the Ru oxides, together with the existence of Ru-C, Pt-C and CO bands, clearly demonstrates the participation of the bi-functional mechanism during the oxidation process of methanol on Pt-Ru electrodes. The Pt-Ru electrode was found to have a higher catalytic activity over Pt electrodes. This preliminary study shows that electrochemical Raman spectroscopy can be applied to the study of rough electrode surface.