• Near Infrared Analysis
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• v.1 no.2
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• pp.9-20
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• 2000

Recently, near-infrared (NIR) spectroscopy and Raman spectroscopy have received keen interest as powerful techniques for nondestructive analysis of biological materials. The purpose of this review paper is to compare the advantages of NIR and Raman spectroscopy in the nondestructive analysis. Both methods are quite unique and often complementary. For example. NIR spectroscopy is very useful in monitoring in situ the content of components inside biological materials while Raman spectroscopy is very suitable for identifying micro-components on the surface of biological materials. In this article specific characters of the two spectroscopic methods are discussed first and then several examples of applications of NIR and Raman spectroscopy to the biological nondestructive analysis are introduced.

• Journal of the Korean institute of surface engineering
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• v.57 no.2
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• pp.71-85
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• 2024

This article provides an overview of Raman spectroscopy and its practical applications for surface analysis of semiconductor processes including real-time monitoring. Raman spectroscopy is a technique that uses the inelastic scattering of light to provide information on molecular structure and vibrations. Since its inception in 1928, Raman spectroscopy has undergone continuous development, and with the advent of SERS(Surface Enhanced Raman Spectroscopy), TERS(Tip Enhanced Raman Spectroscopy), and confocal Raman spectroscopy, it has proven to be highly advantageous in nano-scale analysis due to its high resolution, high sensitivity, and non-destructive nature. In the field of semiconductor processing, Raman spectroscopy is particularly useful for substrate stress and interface characterization, quality analysis of thin films, elucidation of etching process mechanisms, and detection of residues.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.19-24
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• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.

• Journal of the Korean Vacuum Society
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• v.12 no.S1
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• pp.49-51
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• 2003

Amorphous hydrous ruthenium oxide thin films have attracted much interest owing to the possibility of using this material in electrochemical supercapacitors. Recently, it was found that this material is also electrochromic: during the charging/discharging cycle, the optical transmittance of the thin film is modulated. The physical and chemical origin of this phenomenon is not fully understood yet. In this work, we performed in-situ Raman spectroscopy measurements on amorphous hydrous ruthenium oxide thin films during the charging/discharging cycles. Unambiguous changes in the Raman spectrum were observed as protons were injected or extracted from the thin film. When the samples were annealed to reduce the water content, there is a consistent trend in the Raman spectrum. The origins of the Raman features and their relation to the electrochromic and/or supercapacitor characteristics is discussed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.2
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• pp.116-121
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• 2000

The temperature profiles of gas phase and the concentration profiles of GaN precursors in an inverted OMVPE reactor have been carried out by in-situ Raman spectroscopy. Pure rotational Raman scattering from the carrier gas (rd) was used to determine the temperature profiles in the reactor, and a large temperature gradient perpendicular the susceptor surface was observed. The homogeneous gas phase decompositions of the OMVPE precursors were investigated by the vibrational Raman spectra, and it was found that the pyrolyses of $NH_3$ and TMGa begin above 800 K and 650 K, respectively, but a noticeable amount of precursors remain undecomposed even in the region very close to the susceptor.

• Korean Chemical Engineering Research
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• v.47 no.3
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• pp.287-291
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• 2009

The heterogeneous decomposition of ammonia on a quartz surface in an inverted, stagnation-point flow reactor was investigated using a measurement reactor and a numerical model of the reactor. In the experiments, 8 mole% of ammonia in nitrogen was used and the temperature of an electric heater was set in the range $300{\sim}900^{\circ}C$ to heat the quartz surface where the decomposition took place. Gas temperatures and ammonia concentrations in the reactor obtained using in situ Raman spectroscopy were analyzed with the numerical model and it was revealed that, depending on the heater temperature, the temperature of the quartz surface was estimated to be in the range $235{\sim}619^{\circ}C$ and the activation energy of the decomposition on the surface was in the range 10.9~15.8 kcal/mol.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.277-277
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• 2013

The epitaxial graphene on the 4H- or 6H-SiC(0001) surface has been intensively studied due to the possibility of wafer-scale growt. However the existence of interface layer (zero layer graphene) and its influence on the upper graphene layer have been considered as one of the main obstarcles for the industrial application. Among various methods tried to overcome the strong interaction with the substrate through the interface layer, it has been proved that the hydrogen intercalation successfully passivate the Si dangling bond of the substrate and can produce the quasi-free standing epitaxial graphene (QFEG) layers on the siC(0001) surface. In this study, we report the results of the angle-resolved photoemission spectroscopy (ARPES) and Raman spectroscopy for the QFEG layers produced by ex-situ and in-situ hydrogen intercalation.From the ARPES measurement, we confirmed that the Dirac points of QFEG layers exactly coincide with the Fermi level. The band structure of QFEG layer are sustainable upon thermal heating up to 1100 K and robust against the deposition of several metals andmolecular deposition. We also investigated the strain of the QFEG layers by using Raman spectroscopy measurement. From the change of the 2D peak position of graphene Raman spectrum, we found out that unlike the strong compressive strain in the normal epitaxial graphene on the SiC(0001) surface, the strain of the QFEG layer are significantly released and almost similar to that of the mechanically exfoliated graphene on the silicon oxide substrate. These results indicated that various ideas proposed for the ideal free-standing graphene can be tested based on the QFEG graphene layers grown on the SiC(0001) surface.

• Corrosion Science and Technology
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• v.3 no.5
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• pp.198-208
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• 2004

Although there has been no general agreement on the mechanism of primary water stress corrosion cracking (PWSCC) as one of major degradation modes of Ni-base alloys in pressurized water reactors (PWR's), common postulation derived from previous studies is that the damage to the alloy substrate can be related to mass transport characteristics and/or repair properties of overlaid oxide film. Recently, it was shown that the oxide film structure and PWSCC initiation time as well as crack growth rate were systematically varied as a function of dissolved hydrogen concentration in high temperature water, supporting the postulation. In order to understand how the oxide film composition can vary with water chemistry, this study was conducted to characterize oxide films on Alloy 600 by an in-situ Raman spectroscopy. Based on both experimental and thermodynamic prediction results, Ni/NiO thermodynamic equilibrium condition was defined as a function of electrochemical potential and temperature. The results agree well with Attanasio et al.'s data by contact electrical resistance measurements. The anomalously high PWSCC growth rate consistently observed in the vicinity of Ni/NiO equilibrium is then attributed to weak thermodynamic stability of NiO. Redox-induced phase transition between Ni metal and NiO may undermine the integrity of NiO and enhance presumably the percolation of oxidizing environment through the oxide film, especially along grain boundaries. The redox-induced grain boundary oxide degradation mechanism has been postulated and will be tested by using the in-situ Raman facility.

• Korean Journal of Heritage: History & Science
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• v.56 no.4
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• pp.216-228
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• 2023

The purpose of this study is to apply the handheld Raman spectrometer to identify the coloring materials used in a large Buddhist painting (of Maitreya Buddha) at Janggoksa Temple through cross-validation with HH-XRF. An in situ investigation was performed together with use of a digital microscope and HH-XRF analysis to verify the properties of pigments used in the gwaebul ("large Buddhist painting") via a non-destructive method. However, the identification of coloring materials composed of light elements and mixed or overlaid pigments is difficult using only non-destructive analysis data. Unlike in situ investigation, laboratory analysis often required samples yet the sampling is restricted to a small quantity due to the cultural heritage characteristic. Thus, it is necessary to develop a non-destructive in situ method to supplement the HH-XRF data. The large Buddhist painting at Janggoksa Temple was painted mainly using white, red, yellow, green, and blue colors. The Raman spectroscopy provides molecular information, while XRF spectroscopy provides information about elemental composition of the pigments. Analysis results identified various coloring materials: inorganic pigment, such as lead white, minium, cinnabar, and orpiment, as well as organic pigment such as gamboge and indigo. Therefore, it is possible to obtain more information for the identification of pigments; organic pigment and mixed or overlaid pigments, while at the same time minimizing the collection sample and simplifying the analysis procedure compared to previously used methods. The results of this study will be used as basic data for the analysis of painting cultural heritage through a non-destructive in situ method in the future.

• Journal of the Korean Electrochemical Society
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• v.5 no.4
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• pp.221-225
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• 2002

Assisted by the highly sensitive confocal microprobe Raman spectrometer and proper surface roughening procedure, the Raman investigation on the adsorption and reaction of methanol was performed on Pt-Ru electrodes with different coverages. A detailed description of the roughening process of the Pt electrodes and the underpotential deposition of the Ru was given. Reasonably good Raman signal reflecting the metal-carbon vibration and CO vibration was detected. The appearance of vibrations of the Ru oxides, together with the existence of Ru-C, Pt-C and CO bands, clearly demonstrates the participation of the bi-functional mechanism during the oxidation process of methanol on Pt-Ru electrodes. The Pt-Ru electrode was found to have a higher catalytic activity over Pt electrodes. This preliminary study shows that electrochemical Raman spectroscopy can be applied to the study of rough electrode surface.