• Title/Summary/Keyword: in-line wet etch/cleaning system

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ITO Wet Etch Properties in an In-line Wet Etch/Cleaning System by using an Alternating Movement of Substrate (기판의 왕복 운동을 이용한 인라인 식각세정장치 내 ITO 식각특성)

  • Hong, Sung-Jae;Kwon, Sang-Jik;Cho, Eou-Sik
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.8
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    • pp.715-718
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    • 2008
  • An in-line wet etch/cleaning system was established for the research and development in wet etch process. The system was equipped with a reverse moving system for the reduction in the size of the in-line wet etch/cleaning system and it was possible for the glass substrate to be moved back and forth and alternated in a wet etch bath. For the comparison of the effect of the normal motion and that of the alternating motion on the in-line wet etch process, indium tin oxide(ITO) pattern was obtained through both wet etch process conditions. The results showed that the alternating motion is not inferior to the normal motion in etch rate and in etch uniformity. It is concluded that the alternating motion is possible to be applied to the in-line etch process.

ITO Patterning of an In-line Wet Etch/Cleaning System by using a Reverse Moving Control System (반송제어모드를 이용한 인라인 식각/세정장치의 ITO 전극형성기술)

  • Hong, Sung-Jae;Im, Seoung-Hyeok;Han, Hyung-Seok;Kwon, Sang-Jik;Cho, Eou-Sik
    • Journal of Institute of Control, Robotics and Systems
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    • v.14 no.4
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    • pp.327-331
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    • 2008
  • An in-line wet etch/cleaning system was established for the research and development in wet etch process as a formation of electrode such as metal or transparent conductive oxide layer. A reverse moving system was equipped in the in-line wet etch/cleaning system for the alternating motion of glass substrate in a wet etch bath of the system. Therefore, it was possible for the glass substrate to be moved back and forth and it was possible to reduce the size of the system by using the reversing moving system. For the effect of the alternating motion of substrate on the etch rate in the in-line wet etch bath, indium tin oxide(ITO) patterns were obtained through wet etch process in the in-line system in which the substrate was moved back and forth. From the CD(critical dimension) skews resulted from the ADI CD and ACI CD of the ITO patterns, it was concluded that the alternating motion of glass substrate are possible to be applied to the mass production of wet etch process.

A Compacted In-line Wet Etch/Cleaning System With a Reverse Moving Control System

  • Im, Seung-Hyeok;Cho, Eou-Sik;Kwon, Sang-Jik
    • 한국정보디스플레이학회:학술대회논문집
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    • 2008.10a
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    • pp.863-866
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    • 2008
  • For the cost reduction in the fabrication of display panels, a reverse moving system was equipped to a compacted in-line wet etch/cleaning system. For the effect of the alternating movement of substrate on the wet etch process, ITO layers were etched in various moving modes of substrates and the results were compared and analyzed.

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