• Analytical Science and Technology
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• v.17 no.4
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• pp.308-314
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• 2004

When the polymer was used for the guard raw materials of electronic device, the content of U, Th and their daughter nuclides were known as a factor of soft error. Because emitted alpha ray could be caused of mis-operation. And ionic impurities such as Cl, Fe, Na could shorten the device life-time. For the analysis of trace impurities in the polymer, neutron activation analysis(NAA) and ICP/AES have been studied. To improve the accuracy and sensitivity of the trace and ultratrace metallic impurities in the epoxy and phenol polymer, sample pretreatment method and optimum analytical condition of NAA were developed. Using the above method, U, Th and other 23 trace impurity elements were analyzed.

• Nuclear Engineering and Technology
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• v.21 no.1
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• pp.12-17
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• 1989

The correction factor of neutron fraction absorbed by $^{55}$ Mn in the MnSO$_4$ bath was determined for the absolute measurement of neutron emission rate by using the solution circulation-type manganese sulfate bath system. For the determination of this correction factor, I/f, the atomic number desnsity and the effective neutron capture cross section data of Mn, S and impurity elements in the MnSO$_4$ solution were determined. For the atomic number density determination, the MnSO$_4$ solution concentration was determined by using the volumetric EDTA titration and gravimetric method. The impurity contents were analyzed by using the ICP method. For the calculation of effective neutron capture cross sections, a FORTRAN computer program EASCAL was developed in this study. in which Westcott's parameters and Axton's empirical relations are used.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.3
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• pp.149-154
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• 2000

Bi-layer Mo films were deposited on soda-lime glass substrates using DC magnetron supttering. Increasing gas pressure, the resistivity varied from $1\times10^{-5}\; to\; 8.3\times10^{-3}\; \Omega.cm$. Furthermore, stress direction yielded compressive-to-tensile transition stress curves. The micro-structure of the compressively-stressed film which had poor adhesion consists of tightly packed columns, but of the tensile-stressed films had less dense structure. Under all gas pressure conditions, Mo films exhibited distinctly increasing optical reflection with decreasing gas pressure. The expansion of (110) peak width with the gas pressure meant the worse crystalline growth. The impurity levels in the Mo film exhibited highly concentrated Na, Se and O elements due to less dense micro-structure. The degree of Na diffusion depends on the type of the glass substrate used and the nature of the Mo film.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.1
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• pp.31-35
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• 2003

The PL data bases reveal the fact that a part of lattice of HPHT treated diamond is reconfigured by the reduction, elimination, generation, and movement of vacancies and interstitials as well as of impurity elements. In particular, this very sensitive method clearly illustrated that minute amount of nitrogen impurities is present in all of these type IIa diamonds, and reveal the presence of a considerable number of point defects dispersed throughout the crystal lattice.

• Journal of Welding and Joining
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• v.5 no.1
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• pp.73-80
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• 1987

During PWHT, it is well known that residual stress in weld HAZ is one of the reasons for PWHT embitterment. In case of static loading, it was experimentally found that fracture toughness of weld HAZ was dependant upon PWHT conditions. However, the effects of PWHT on fatigue behavior are not clearly verified. Therefore, in this paper, the effects of heating rate PWHT conditions and residual stress simulated in weld HAZ of Cr-Mo steel on fatigue crack propagation behavior were evaluated by fatigue Testing and SEM observation. The obtained results are summarized as follows; 1. Applied stress($10 Kgf/mm^2$) in weld HAZ during PWHT tneded to decrease fatigue strength and to increase fatigue crack growth rate. 2. Applied stress and slow heating rate of 60.deg. C/hr during PWHT contributed to precipitin of impurity elements as well as carbide, which promoted the fatigue crack growth. 3. Fatigue crack growth rate decreased at the heating rate of 220.deg. C/hr in contrast with 600.deg. C/hr and 60.deg. C/hr.

• Journal of the Korean Vacuum Society
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• v.8 no.3B
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• pp.302-307
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• 1999

We have grown a high quality ZnSe(100) epilayer on the GaAs(100) substrate by hot-wall epitaxy method. The FWHM value from double-crystal x-ray diffraction rocking curve and growth rate of the ZnSe epilayer grown under the optimal growth conditions were 195 arcsec and 0.03 $\mu \textrm m$/min, respectively. The $I_2^U$ and $I_2^L$ peaks, which split by strain due to lattice mismatch between substrate and epilayer, were measured from the photoluminescence experiment. And we found that the residual impurities in ZnSe epilayer were concerned with Al or CI elements from the calculated binding energy of donor impurity.

• Journal of Powder Materials
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• v.3 no.2
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• pp.112-119
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• 1996

Using rice husks pulverized by rotating knife cutter, the raw rice husk powder was solution treated by nitric and hydrochloric acids in order to separate phytolith from organic constituents. Because of the strong resistance of organic components of rice husk to acids, the raw powder had to be boiled in concentrated acids up to 300 min. By boiling in nitric acid for 60~120 min, all organic components were resolved while amorphous silica Powder of about 20 nm in size and of higher than 99.8% in purity was left behind. Inferior to the nitric acid, hydrochloric acid was not able to resolve organic component completely leaving unresolved matter of about 40% by weight even after 300 min of boiling. From the acid treatments and impurity analyses, it is considered that most of metallic elements in rice husks are combined to organic components that are easily soluble to acids.

• Journal of Powder Materials
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• v.5 no.3
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• pp.210-219
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• 1998

The W-Cu composite powders were synthesized from W and Cu elemental powders by ball-milling process, and their microstructural changes and sintering behaviors were evaluated. The ball milling process was carried out in a 3-dimensional mixer (Turbula mixer) using zirconic ($ZrO_2$) ball and alumina ($Al_2O_3$) vial up to 300 hrs. The ball-milled W-Cu powders revealed nearly spherical shape. Microstructure of the composite powders showed onion-like structure which consists of W and Cu shells due to the moving characteristic of Turbula mixer. The W and Cu elements in the composite powders milled for 300 hrs were homogeneously distributed, and W grain size in the ball-milled powder was smaller than 0.5 $\mu\textrm{m}$. Fe impurity introduced during ball milling process was very low as of 0.001 wt%. The relative sintered density of ball-milled W-Cu specimens reached about 94% after sintering at $1100^{\circ}C$.

• Corrosion Science and Technology
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• v.7 no.3
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• pp.158-161
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• 2008

It is well known that iron is one of the most common impurity elements found in aluminum and its alloys. Iron in the aluminum forms an intermetallic compounds such as $FeAl_3$. The $FeAl_3$ particles on the aluminum surface are one of the most detrimental phases to the corrosion process and anodizing procedure for aluminum and its alloys. Trial and error surface treatment will be carried out to find the preferential and effective removal of $FeAl_3$ particles on the surfaces without dissolution of aluminum matrix around the particles. One of the preferable surface treatments for the aim of getting $FeAl_3$ free surface was an electrochemical treatment such as cathodic current density of $-2kAm^{-2}$ in a 20-30 mass% $HNO_3$ solution for the period of 300s. The corrosion characteristics of aluminum surface with $FeAl_3$ free particles are examined in a $0.1kmol/m^3$ NaCl solution. It is found that aluminum with free $FeAl_3$ particles shows higher corrosion resistance than aluminum with $FeAl_3$ particles.

• Transactions on Electrical and Electronic Materials
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• v.7 no.4
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• pp.173-179
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• 2006

Due to the limitations of the channel length, the lateral spread for two-dimensional impurity distributions is critical for the analysis of devices including the integrated complementary metal oxide semiconductor (CMOS) circuits and high frequency semiconductor devices. The developed codes were then compared with the two-dimensional implanted profiles measured by transmission electron microscope (TEM) as well as simulated by a commercial TSUPREM4 for verification purposes. The measured two-dimensional TEM data obtained by chemical etching-method was consistent with the results of the developed analytical model, and it seemed to be more accurate than the results attained by a commercial TSUPREM4. The developed codes can be applied on a wider energy range $(1KeV{\sim}30MeV)$ than a commercial TSUPREM4 of which the maximum energy range cannot exceed 1MeV for the limited doping elements. Moreover, it is not only limited to diffusion process but also can be applied to implantation due to the sloped and nano scale structure of the mask.