• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2000년도 추계종합학술대회 논문집(2)
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• pp.325-328
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• 2000

The control of the data retention time is a main issue for realizing future high density dynamic random access memory. In this paper, we propose the new implantation scheme by gate-related ion beam shadowing effect and buffer-enhanced $\Delta$ Rp increase using buffered N- implantation with tilt and 4X-rotation that is designed on the basis of the local-field-enhancement model of the tail component. We report an excellent tail improvement of the retention time distribution attributed to the reduction of electric field across the cell junction due to the redistribution of N- concentration which is intentionally caused by Ion Beam Shadowing and Buffering Effect using tilt implantation with 4X-rotation.

• 한국표면공학회지
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• 제42권3호
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• pp.103-108
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• 2009

The effect of Arsenic in copper-sulfate solutions during electrorefining of copper was investigated using scanning electron microscopy, X-ray diffraction and cyclic voltammetry analysis. Electrodeposition was carried out using Arsenic, Antimony and bismuth addition to sulfate electrolytes: 45 g/l $Cu^{2+}$ and 170 g/l $H_2SO_4$. Arsenic in sulfate electrolytes changed the morphology and structure of the copper deposits as compared with those obtained from impurity free solutions. When arsenic was present in the sulfate electrolytes, $Cu-3$As intermetallic phase was formed locally on the deposits.

• 한국세라믹학회지
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• 제31권9호
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• pp.1012-1220
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• 1994

BaTiO3 ceramics doped with 0.1 to 4.0 mol% Nb2O5 were prepared by conventional solid stage sintering process, so as to investigate the effect of the amount of Nb2O5 on the dielectric properties and complex impedance patterns of barium titanates. From the measurement of capacitance, we found that the dielectric constant of BaTiO3 samples with 1 mol% or more Nb2O5 remained approximately constant around room temperature with values higher than 2500. In this paper, the effect of impurity content as well as temperature on complex impedance patterns was discussed in detail. In particular, the grain and grain boundary behavior of samples which showed PTCR characteristics was discussed in terms of measuring temperature.

• Journal of Radiation Protection and Research
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• 제34권2호
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• pp.65-68
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• 2009

Metal-semiconductor contact is very important for the operating property of semiconductor detector. $Cd_{0.96}$ $Zn_{0.04}$ Te semiconductor crystal was grown with Bridgman method, and the crystal was cut and polished. EPMA (Electron Probe Micro Analyzer) and ICP-MS (Inductively Coupled Plasma Mass Spectrometry) analysis were done to obtain the chemical composition and impurity of the crystal. Metal contact was deposited with thermal evaporator on both sides of the crystal. Detectors with Au/CZT/Au and In/CZT/Au structure were made, and I-V curve and the energy spectrum were measured with the detectors. It could be seen that the detector with the In/CZT/Au structure has superior property than the detector with Au/CZT/Au structure when the crystal resistivity was low. However, the metal contact structure effect becomes low when the crystal resistivity was high.

• Current Applied Physics
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• 제18권12호
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• pp.1553-1557
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• 2018

Gallium nitride (GaN) nanoparticles are synthesized by the gallium particle trapping effect in a $N_2$ nonthermal plasma with metallic Ga vapor. A proposed method has an advantage of synthesized GaN nanoparticle purity because the gallium vapor from the inductively heated tungsten boat does not contain any impurity source. The synthesized particle size can be controlled by the amount of Ga vapor, which is adjusted using the plasma emission ratio of nitrogen to gallium, owing to the particle trapping effect. The synthesized nanoparticles are investigated by electron microscopy studies. High-resolution transmission electron microscopy (HRTEM) studies confirm that the synthesized GaN nanoparticles (10-40 nm) crystallize in a single-phase wurtzite structure. Room-temperature photoluminescence (PL) measurements indicate the band-edge emission of GaN at around 378 nm without yellow emission, which implies that the synthesized GaN nanoparticles have high crystallinity.

• The Korean Journal of Ceramics
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• 제5권1호
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• pp.1-11
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• 1999

The effect of aliovalent dopents, $Nb_3O_5$ and MnO, on the grain growth kinetics of 12 mol% ceria stabilized tetragonal zirconia polycrystals (Ce-TZP) was studied. All specimens were sintered at $1550^{\circ}C$ for 20 minutes prior to annealing at different temperatures to study grain growth kinetics. Grain growth kinetics of Ce-TZP and 1 mol% $Nb_2O_5$ doped Ce-TZP (Ce-TZP/$Nb_3O_5$) during annealing at 1475, 1550, and $1600^{\circ}C$ adequately matched with square law $(D^2-D_\;o^2=k_at)$. However, grain growth in 1 mol% MnO suppressed grain growth in Ce-TZP by drag force exerted by $Mn^{+2}$ ions which segregated strongly to the positively-charged grain boundaries of Ce-TZP, $Nb_2O_5$ enhanced grain growth by increasing the concentration of vacancies of $Zr^{+4}$ ion and $Ce^{+4}$ ions. Surface analysis with X-ray photoelectron spectroscopy (XPS) showed the segregation of Mn+2 ions to grain boundaries. The kinetics of grain growth obtained in the base Ce-TZP and the Ce-TZPs with the aliovalent dopants were examined in the context of impurity drag effect and space charge effect.

• 한국결정성장학회지
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• 제28권2호
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• pp.57-62
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• 2018

본 연구에서는 Mg acetate 수용액을 사용한 간편한 도핑방법으로 불순물을 주입하여 성장한 $Ga_2O_3$ 박막의 불순물 주입 효과에 대해 연구하였다. MOCVD 방법을 이용해 Si 기판 위에 undoped $Ga_2O_3$ 박막과 Mg-doped $Ga_2O_3$ 박막을 각각 $600^{\circ}C$와 $900^{\circ}C$의 성장온도에서 30분간 성장하였다. 표면 형상 분석 결과 Mg 불순물 주입에 따른 큰 차이는 확인되지 않았으며 $900^{\circ}C$에서 성장한 박막의 표면이 $600^{\circ}C$에서 성장한 박막의 표면보다 큰 거칠기를 가지고 다결정화 되는 것을 확인하였다. 광학적 특성 분석 결과, 도핑된 샘플의 경우 전체적인 발광 피크가 red shift 되었고 UV 방출 세기가 커지는 특성을 보였다. I-V 측정 결과로부터 Mg 불순물에 의해 $600^{\circ}C$ 성장 박막의 누설전류가 감소하고, $900^{\circ}C$ 성장 박막의 광전류는 증가하는 효과를 확인하였다.

• 분석과학
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• 제21권4호
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• pp.332-337
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• 2008

실리카 광물의 정제를 위해 다양한 침출방법을 사용하여 침출특성을 비교하였다. 2.5% HF/HCl 산 침출용액을 사용하여 진동, 젓기, 초음파를 이용한 침출실험에서 초음파에 의한 침출방법이 가장 좋은 불순물 제거 효율을 나타내었다. 실험결과 Al, Ca, Fe, K, Na 등이 주 불순물로 존재하고 있었으며, 그 외 미량의 불순물로 Ba, Cu, Sr, Ti 등이 존재하였다. 실리카 광물중의 불순물 함량은 침출법에 의해 대부분 감소되었다. 또한 주 불순물인 Al, Fe의 경우 침출방법에 따라 제거율이 크게 차이나지 않았으나, Ca, Mn, Na 등은 제거율이 현저히 다른 양상을 나타내었다. 물리적 정제과정을 거친 4종류의 실리카 광물(순도 99% 이상)을 초음파를 이용한 산 침출법으로 정제한 결과, 총 불순물의 양은 NK-Si와 GR-Si이 적었으나 산 침출과정을 거친 후에는 IN-Si 실리카의 불순물 량이 가장 적게 나타났다. 불순물 중 Ca, Cr, K, Zn 등은 거의 80% 이상 초음파 침출법에 의해 제거되었고, 주 불순물인 Al의 경우 시료에 따라 10~60%의 제거율 차이를 나타내며 Fe는 모든 시료에서 60% 이상 제거되었다.

• Journal of Electrochemical Science and Technology
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• 제3권3호
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• pp.123-134
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• 2012

The electrochemical performance of positive pole grids of lead-acid batteries made of Pb-0.08%Ca-1.1%Sn alloys without and with 0.1 wt% of each of Cu, As or Sb and with 0.1 wt% of Cu, As and Sb combined was investigated by electrochemical methods in 4.0 M $H_2SO_4$. The corrodibility of alloys under open-circuit conditions and constant current charging of the positive pole, the positive pole gassing and the self-discharge of the charged positive pole were studied. All impurities (Cu, As, Sb) were found to decrease the corrosion resistance, $R_{corr}$ after 1/2 hour corrosion, but after 24 hours an improvement in $R_{corr}$ was recorded for Sb containing alloy and the alloy with the three impurities combined. While an individual impurity was found to enhance oxygen evolution reaction, the impurities combined significantly inhibition this reaction and the related water loss problem was improved. Impedance results were found helpful in identification of the species involved in the charging/discharging and the self-discharge of the positive pole. Impurities individually or combined were found to increase the self-discharge during polarization (33-68%), where Sb containing alloy was the worst and impurities combined alloy was the least. The corrosion of the positive pole grid in the constant current charging was found to increase in the presence of impurities by 5-10%. Under open-circuit, the self-discharge of the charged positive grids was found to increase significantly (92-212%) in the presence of impurities, with Sb-containing alloy was the worst. The important result of the study is that the harmful effect of the studied impurities combined was not additive but sometimes lesser than any individual impurity.

• 한국초전도ㆍ저온공학회논문지
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• 제5권3호
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• pp.6-10
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• 2003

Silver nano-powder was added to Ma $B_2$ to make (Ag)$_{(x)wt.%}$(Mg $B_2$)$_{(l00-x)wt.%}$ (A $g_{x}$-Mg $B_2$) (10 $\leq$ x $\leq$ 50) composite superconductors to investigate the effect of the Ag nano-powder on the vortex pinning. Pellets made out of the mixed powder were put inside stainless steel tubes, which were sintered at 85$0^{\circ}C$ in Ar atmosphere. No impurity phase was identified for as-rolled samples. However, both the Mg $B_2$ and the A $g_{x}$-Mg $B_2$ composite pellets, when sintered, contain small amount of Mg $B_4$ and MgAg impurity phases. From the magnetization study, it was found that the flux pinning was improved in the high magnetic field region (> 3 T) only when 10w/o Ag was added to Mg $B_2$. The "two step" structures in ZFC M(T) curve gradually increased as the amount of Ag added increased. Pinning centers can be created by adding a suitable amount of Ag nano-powder which is not too large to increase the decoupling between the Mg $B_2$ grains.crease the decoupling between the Mg $B_2$ grains.