• Journal of the Korean Vacuum Society
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• v.1 no.3
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• pp.376-381
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• 1992

Tungsten silicide films were deposited on the highly phosphorus-doped poly Si/SiO2/Si substrates by Low Pressure Chemical Vapor Deposition. They were heat treated in different conditions. XTEM, SIMS and high frequency C-V analysis were conducted for characterization. It can be concluded that outdiffusion of phosphours impurity throught the silicide films lead to its depletion in the poly-Si gate region near the gate oxide, resulting in loss of capacitance and increase of effective gate oxide thickness.

• 전기의세계
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• v.16 no.4
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• pp.11-16
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• 1967

A physical analysis is applied to the measured phenomena of aromatic organic compounds under the uniform electric field of 0.1MV/cm through 1.5MV/cm, when they are irradiated or non-irradiated respectively. Upon the observations about irradiation effects, space charge effects and their temperature dependance, the conditions of lattice defects act conspicuously on electric conductrivity, photo conductivity and dielectric breakdown. Although the qualitative agreement with Frohlich's high energy criterion theory for the above mechanisms is poor, it is concluded that the phenomena of aromatic compounds may possibly be due to the effect of lattice defects or impurity centers generated by .gamma.-ray irradiations.

• Communications for Statistical Applications and Methods
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• v.2 no.1
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• pp.74-88
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• 1995

This article introduces a unified method of choosing the most explanatory and significant multiway partitions for classification tree design and analysis. The method is derived on the impurity reduction (IR) measure of divergence, which is proposed to extend the proportional-reduction-in-error (PRE) measure in the decision-theory context. For the method derivation, the IR measure is analyzed to characterize its statistical properties which are used to consistently handle the subjects of feature formation, feature selection, and feature deletion required in the associated classification tree construction. A numerical example is considered to illustrate the proposed approach.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.2
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• pp.57-62
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• 2018

In this study, we investigated the impurity effect of $Ga_2O_3$ doped thin film by simple doping method using Mg acetate solution. Both undoped $Ga_2O_3$ thin films and Mg-doped $Ga_2O_3$ thin films were grown on Si substrates at 600 and $900^{\circ}C$ for 30 minutes by means of a customized MOCVD method. As a result of the surface analysis, there were no obvious morphological differences by Mg impurity implantation. The surface of the thin film grown at $900^{\circ}C$ was rougher than those grown at $600^{\circ}C$ and polycrystallization was achieved. As a result of the optical property analysis, in the case of the doped sample, the overall emission peak was red shifted and the UV radiation intensity was increased. As a result of the I-V curve, the leakage current of the $600^{\circ}C$ growth thin film decreased by the Mg impurity and the photocurrent of the growth thin film of $900^{\circ}C$ increased.

• Proceedings of the Korean Geotechical Society Conference
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• 2002.03a
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• pp.253-260
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• 2002

Chemical weathering processes related with mineralogical characters and ground water condition are very essential engineering problems in soluble rock masses. Detailed geological mapping were performed and 8 samples were collected from the 2 formations including various rock faces to deduce the possibility of the limestone cavity formation and their mechanism. Petrological descriptions and various petro-mineralogical experiments such as XRD analysis, clay mineral analysis, absorptivity test, impurity analysis were conducted to evaluate the cavity making processes. Laboratory solubility test for rock specimen were also carried out under the strong acid (pH=1) condition. From the experimental data and geological mapping data, it is found that the formation of limestone cavities in limestones are strongly related with geological structures such as beddings, cleavages and the contents of impurities rather than CaCO$_3$contents. In case of dolomites, rock textures, grain size, amounts and types of clay minerals as well as geological structures are major controlling factors of cavity forming processes

• Bulletin of the Korean Chemical Society
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• v.22 no.2
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• pp.159-163
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• 2001

Si3N4 powder has been analyzed by inductively coupled plasma atomic emission spectrometry (ICP-AES). The sample was dissolved by high-pressure acid digestion with HF, H2SO4 (1+1), and HNO3 mix ture. This technique is well suited for the impurity analysis of Si3N4 because the matrix interference is eliminated. A round-robin samples trace elements, such as Ca, W, Co, Al, Fe, Mg, and Na, were determined. For the direct analysis, slurry nebulization of 0.96 mm Si3N4 powder also has been studied by ICP-AES. Emission intensities of Fe were measured as ICP operational conditions were changed. Significant signal difference between slurry particles and aqueous solution was observed in the present experiment. Analytical results of slurry injection and high-pressure acid digestion were compared. For the use of aqueous standard solution for calibration, k-factor was determined to be 1.71 for further application.

• Analytical Science and Technology
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• v.20 no.6
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• pp.516-523
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• 2007

Purification of silica mineral has been investigated by acid leaching of pulverized silica. A series of studies has been carried out on the effect of leaching silica powder as a function of the leaching time at the constant temperature of $80^{\circ}C$ in oxalic acid, aqua regia, and two mixed acids of HF/HCl, $HF/HNO_3$. The impurities of silica and leachantes were measured by neutron activation analysis (NAA), inductively coupled plasma atomic emission spectrometry (ICP-AES), atomic absorption spectrometry, x-ray fluorescence (XRF) method and wet analysis (WA). Certain metals, such as sodium, calcium, iron, aluminium and titanium, have been found in concentrations of hundreds or even thousands of mg/kg. Comparison of purification processes of silica and analytical methods of impurities in the silica was conducted in this study.

• Journal of Hydrogen and New Energy
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• v.16 no.3
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• pp.290-295
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• 2005

For the application of fuel cell, the content and concentration of impurities in hydrogen stream must be classified. The purpose of this study is to provide analysis tool for the determination of impurities in hydrogen with ultra high purity. To produce UHT hydrogen, we purified hydrogen gas by both getter-based catridge and liquid-nitrogen soaked catridge. We compare two methods and propose new method to know about what is in hydrogen stream.

• Journal of the Korean Society for Precision Engineering
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• v.30 no.3
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• pp.278-283
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• 2013

While Built-in Spindle is working in machining center, the tool is changed by ATC(Automatic Tool Changer) automatically. However, impurities could be stacked in front of spindle because of chips formation while machining, and positional error between spindle and tool could be generated. Compressed air holes are necessary for removal of the impurities. But, the diameter and number of compressed air hole are different for each built-in spindle in market. In this paper, flow analysis is carried out to find out the efficient figuration of the compressed air hole by using velocity and pressure distributions.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.946-949
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• 1999

In this research we have developed a reliable, effective and feasible HEI(High-Energy Ion Implantation) process 3D-simulation tool, and then by using it we can predict and analyze the effect of HEI process on characteristics of the standard CMOS device. high-energy ion implantation above 200 keV is inevitable process to form retrograde well and buried layer to prevent leakage current, to conduct field implant for field isolation, and to perform after-gate implantation. The feasible analysis tool is a product of the HEI process modeling verified by comparison of the SIMS experiments with the simulation results. Especially, in this paper, we present the predicting capability of HEI-induced impurity and damage profiles compared with the published SIMS data in order to acquire the reliability of our results ranging from few keV to several MeV for phosphorus and boron implantation.