• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.6
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• pp.487-490
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• 2007

In this paper, the formation and thermal stability characteristics of Ni silicide using Ni-V alloy on Boron cluster ($B_{18}H_{22}$) implanted bulk and SOI substrate were examined in comparison with pure Ni for nano-scale CMOSFET. The Ni silicide using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate after high temperature post-silicidation annealing showed the lower sheet resistance, no agglomeration interface image and lower surface roughness than that using pure Ni. The thermal stability of Ni silicide was improved by using Ni-V alloy on $B_{18}H_{22}$ implanted SOI substrate.

• Progress in Medical Physics
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• v.5 no.2
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• pp.3-12
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• 1994

$\^$137/Cs gamma ray induced thermoluminescenc(TL) from Na$\^$+/ ion implanted Al$_2$O$_3$ and unimplanted Al$_2$O$_3$ and the TL from Na$\^$+/ ion implanted Al$_2$O$_3$ are measured over the temperature range of 340K～620K. The TL curve of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is split into iolated TL peak located at 415K, 452K, 508K, and 568K. Because that the concentration of trapped char he carries of $\^$137/Cs gamma ray induced Al$_2$O$_3$ implanted with Na$\^$+/ ion is larger than that of Na$\^$+/ ion only implanted Al$_2$O$_3$, and the trap concentration of Na$\^$+/ ion implanted Al$_2$O$_3$ is much than that of $\^$137/Cs gamma ray only irradiated Al$_2$O$_3$, the TL intensity of Na$\^$+/ ion implanted Al$_2$O$_3$ induced by $\^$137/Cs gamma ray is about 20 times and 5 times higher than that of Al$_2$O$_3$ only implanted with Na$\^$+/ ion and Al$_2$O$_3$ only irradiated with $\^$137/Cs gamma ray, respectively. In proportion as ion implantation does and energy are incresed, the number of generated defects and the rate of defect creation are incresed, respectively. Therefore the TL intensity of ion implanted Al$_2$O$_3$ is depend on ion dose and energy. Acccrding to increse of incident ion mass, the TL intensity of ion implanted Al$_2$O$_3$ is abruptly decresce. This result showes that the TL intensity of ion implanted Al$_2$O$_3$ is closely related to ion depth range as wll as rate of defect creatin. The TL intensity of ion implanted Al$_2$O$_3$ is found to be related with defects generated by ion implantation. Table Caption

• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.2
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• pp.188-195
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• 1988

The electronic states in implanted n-type silicon inversion layers have been calculated by solving Schrodinger and Poisson's equations self-consistently. The results show that implantation affects seriously energy levels, populations, and electron distribution of n-type silicon inversion layers. The calcualted channel charge is in excellent agreement with the experimental data reported elsewhere. This analysis is expected to provide powerful means to evaluate the performance of implanted n-channel MOSTs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.10 no.4
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• pp.260-264
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• 2010

In this paper, Ni silicide is formed on boron cluster ($B_{18}H_{22}$) implanted source/drains for shallow junctions of nano-scale CMOSFETs and its thermal stability is improved, using vacuum annealing. Although Ni silicide on $B_{18}H_{22}$ implanted Si substrate exhibited greater sheet resistance than on the $BF_2$ implanted one, its thermal stability was greatly improved using vacuum annealing. Moreover, the boron depth profile, using vacuum post-silicidation annealing, showed a shallower junction than that using $N_2$ annealing.

• Proceedings of the Korean Society of Tribologists and Lubrication Engineers Conference
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• 2004.11a
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• pp.301-305
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• 2004

Effects of ion implantation on the adhesion strength of DLC film as a function of ion doses and implanted energies were investigated. Ti ions were implanted on the Si-wafer substrates followed by DLC coating using ion beam deposition method. Adhesion strength of DLC films were determined by scratch adhesion tester. Morphologies and compositional variations at the different ion energies and doses were observer by Laser Microscope and Auger Electron Spectroscopy, respectively. From results of scratch test, the adhesion strength of films was improved as increasing ion implanted energy, however there was no significant evidence with ion dose.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.1
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• pp.8-11
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• 2002

Ni, Si and $SiO_2$ films were implanted by 350 keV B $i_{+}$ ions at room temperature with fluences of 1$\times$10$^{16}$ and 2$\times$10$^{16}$ ions/c $m^2$ The depth distributions of implanted B $i^{+}$ ions in Ni, Si and $SiO_2$ films were by investigated by Rutherford backscattering. The results show that the depth distributions of implanted B $i^{+}$ ions into Ni, Si and $SiO_2$ films have obeyed nearly Gaussian distributions. The maximum difference between experimental and calculated values is less than 18 % for mean projected range. Experimental range straggling deviated significantly from calculated value. The possible reasons are discussed.sed.d.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.51-58
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• 1985

A simple model for the impurity profile in an ion-implanted channel layer of an enhance-ment type IGFET is assumed and a simple expression for the threshold voltage is derived by the assumed impurity profile. In application, the concept of correction factor K is used and the value of threshold voltage is well agreed with experimental value. Also, 1-V character-istics curve is well agreed with experimental value. In addition, this program is packaged and is utilized.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.24 no.7 s.178
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• pp.1748-1752
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• 2000

In this paper, the measurement technique of cutting temperatures of shear zone using implanted thermocouples is proposed in ball end milling. K-type thermocouple implanted in the hole of workpieces is directly cut in order to measure temperatures of the shear zone in cutting process. Experiments are performed for a nickel based superalloy(Inconel 718) using a ball nose end mill. The results show that the cutting temperature in shear zone is about 3200C at the cutting speed of 90m/min with dry.

• Electrical & Electronic Materials
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• v.10 no.9
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• pp.881-888
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• 1997

This study demonstrats the profiles of phosphorus ions in silicon by MeV implantation(1∼3 MeV). Implanted profiles could be measured by SIMS(Cameca 4f) and compared with simulation results(TRIM program and analytical description method only using on Pearson function). The experimental result in the peak concentration region has a little bit deviation from simulation data. By RBS and Channeling measurements the defect distribution of implanted samples could be measured and spectrum are calibrated depth with RUMP simulation By XTEM measurement the thickness of defect zone also could be measured. Finally thermal annealing for the electrical activation of implanted ions carried out by RTA(rapid thermal annealing). The concentration-depth profiles after heat treatment was measured by SR(spreading resistance)-method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.700-704
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• 1998

In this paper, the optical properties of boron ion implanted GaAs were investigated by photoluminescence(PL) measurements. The implantations were preformed at room temperature with the energy of 150 eV. The range of implanted dose was $10^{12}~10^{15} ions/cm^2$. The boron implanted samples were annealed between $450^{\circ}C$ and $800^{\circ}C$ for 20 minutes. The crystallinity of low dosed samples were increased with increasing annealing temperature up to $700^{\circ}C$ while that of the high dosed($10^{15} ions/cm^2$) was almost same. From the samples with dose of $10^{14}~10^{15} ions/cm^2$, two emission bands were observed at 1.438 eV (B1) and 1.459 eV (B2) after the thermal treatment. These emission bands seems to be attributed to the $B_{Ga}$-defect complex.