• Transactions on Electrical and Electronic Materials
• /
• v.1 no.1
• /
• pp.26-31
• /
• 2000

The ~1540 nm $^4$ $I_{13}$ 2/ longrightarro $w^4$ $I_{15}$ 2/ emissions of E $r^{3+}$ in Er-implanted GaN annealed at temperatures in the 400 to 100$0^{\circ}C$ range were investigated to gain a better understanding of the formation and dissociation processes of the various E $r^{3+}$ sites and the recovery of damage caused by the implantation with increasing annealing temperature ( $T_{A}$).The monotonic increase in the intensity of the broad defect photoluminescence(PL) bands with incresing $T_{A}$ proves that these are stable radiative recombination centers introduced by the implantation and annealing process. Theser centers cannot be attributed to implantation-induced damage that is removed by post-implantation annealing. Selective wavelength pumpling of PL spectra at 6K reveals the existence of at least nine different E $r^{3+}$ sites in this Er-implanted semiconductor. Most pf these E $r^{3+}$ PL centers are attributed to complexed of Er atoms with defects and impurities which are thermally activated at different $T_{A}$. Only one of the nine observed E $r^{3+}$ PL centers can be pumped by direct 4f absorption and this indicates that it is highest concentration E $r^{3+}$ center and it represents most of the optically active E $r^{3+}$ in the implanted sample. The fact that this E $r^{3+}$ center cannot be strongly pumped by above-gap light or broad band below-gap absorption indicates that it is an isolated center, i.e not complexed with defects or impurities, The 4f-pumped P: spectrum appears at annealing temperatures as low as 40$0^{\circ}C$, and although its intensity increase monotonically with increasing $T_{A}$ the wavelengths and linewidths of its characteristic peaks asre unaltered. The observation of this high quality E $r_{3+}$PL spectrum at low annealing temperatures illustrates that the crystalline structure of GaN is not rendered amorphous by the ion implantation. The increase of the PL intensities of the various E $R_{3+}$sites with increasing $T_{A}$is due to the removal of competing nonradiative channels with annealing. with annealing.annealing.

• Journal of Korean Vacuum Science & Technology
• /
• v.3 no.1
• /
• pp.1-9
• /
• 1999

This paper presents a newly enhanced damage model in Monte Carlo (MC) simulation for the accurate prediction of 3-Dimensional (3D) as-implanted impurity and point defect profiles induced by ion implantation in (100) crystal silicon. An empirical electronic energy loss model for B, BF2, As, P and Si self implant over the wide energy range has been proposed for the ULSI device technology and development. Our model shows very good agreement with the SIMS data over the wide energy range. In the damage accumulation, we considered the self-annealing effects by introducing our proposed non-linear recomvination probability function of each point defect for the computational efficiency. For the damage profiles, we compared the published RBS/channeling data with our results of phosphorus implants. Our damage model shows very reasonable agreement with the experiments for phosphorus implants.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.2
• /
• pp.97-100
• /
• 2002

NaEr(WO$_4$)$_2$ is a new laser material. The planar optical waveguide was formed in NaEr(WO$_4$)$_2$ crystal by 2.6 MeV He$^{+}$ ion implantation at doses of 1.0-1.5 $\times$ 10$^{16}$ ions/cm$^2$ at room temperature. The effective refractive indices of the dark modes were measured using the prism coupling method. foul n modes and five TM modes were observed in the waveguide. The refractive index profiles were analyzed using the reflectivity calculation method (RCM). The influence of heat treatment at moderate temperature on the refractive index profiles of the waveguide was also investigated. We used the TRIM'98 (Transport of ton in Matter) code to simulate the damage profile in the NaEr(WO$_4$) crystal by 2.6 MeV He$^{+}$ion implantation which is helpful for a better understanding of the waveguide formation.ion.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.30A no.8
• /
• pp.42-48
• /
• 1993

Ar ions were implanted at 1 MeV into (100)Cz Si wafers with dose of 1 * 10$^{15}$ ions/cm$^{2}$. Damage induced by high energy implantation and its annealing behavior during rapid thermal annealing for 10sec at temperatures from 550 to 1100${\circ}C$ were investigated by crosssection transmission electron microscopy study. It can be clearly seen from the observation that the SPE(Solid Phase Epitaxy) regrowth of the buried amorphous layer induced by ion implantation proceeds from both upper and lower amorphous/crystalline (a/c) interfaces, and the activation energy for SPE from interfaces were both 1.43eV. Misfit dislocation where two interfaces met was formed and it coalesced into the hair pin dislocation in the upper regrown region. At the higher temperature after annealing out of the misfit dislocation, hair pin dislocations showed considerable drop in its bandwidth. However, they were not disappeared even at the temperature 1100${\circ}C$ with the end of range dislocation loops which were formed at the original lower a/c interface.

• Korean Journal of Audiology
• /
• v.25 no.1
• /
• pp.49-54
• /
• 2021

Type II mucopolysaccharidosis (MPS II) commonly known as Hunter syndrome, is a rare X-linked lysosomal storage disorder caused by iduronate-2-sulfatase deficiency, which in turn causes otorhinolaryngological manifestations, including sensorineural hearing loss (SNHL). Previously, the median survival age of patients with MPS was approximately 13.4 years. However, in the era of enzyme replacement therapy and other multidisciplinary care modalities, the life expectancy has increased. Herein, we report a rare case of an adolescent with MPS II who underwent SNHL treatment with cochlear implantation (CI). Based on unexpected findings of mastoid emissary veins and overgrowth of the vessels around the temporal bone, CI was performed using the transmeatal approach instead of the conventional transmastoid method, to avoid damage to the vessels. The average hearing threshold after CI was 35 dB and no surgical complications were encountered. Adolescent MPS II may present vessel abnormalities, which can reduce the success rate of surgery. In patients with MPS II with SNHL, CI should be performed under careful monitoring of vessel overgrowth. Moreover, with regard to feasibility of CI in adolescent patients with MPS II with SNHL, surgical techniques such as the transmeatal approach should be selected based on adequate assessment of the case.

• Journal of Audiology & Otology
• /
• v.25 no.1
• /
• pp.49-54
• /
• 2021

Type II mucopolysaccharidosis (MPS II) commonly known as Hunter syndrome, is a rare X-linked lysosomal storage disorder caused by iduronate-2-sulfatase deficiency, which in turn causes otorhinolaryngological manifestations, including sensorineural hearing loss (SNHL). Previously, the median survival age of patients with MPS was approximately 13.4 years. However, in the era of enzyme replacement therapy and other multidisciplinary care modalities, the life expectancy has increased. Herein, we report a rare case of an adolescent with MPS II who underwent SNHL treatment with cochlear implantation (CI). Based on unexpected findings of mastoid emissary veins and overgrowth of the vessels around the temporal bone, CI was performed using the transmeatal approach instead of the conventional transmastoid method, to avoid damage to the vessels. The average hearing threshold after CI was 35 dB and no surgical complications were encountered. Adolescent MPS II may present vessel abnormalities, which can reduce the success rate of surgery. In patients with MPS II with SNHL, CI should be performed under careful monitoring of vessel overgrowth. Moreover, with regard to feasibility of CI in adolescent patients with MPS II with SNHL, surgical techniques such as the transmeatal approach should be selected based on adequate assessment of the case.

• Journal of the Korean Vacuum Society
• /
• v.6 no.S1
• /
• pp.96-109
• /
• 1997

In order to simulate the corrosion behavior of Zr-4 alloy in pressurized water reactors it was implanted (or bombarded) with 190ke V $Zr^+\; and \;Ar^+$ ions at liquid nitrogen temperature and room temperature respectively up to a dose of $5times10^{15} \sim 8\times10^{16} \textrm{ions/cm}^2$ The oxidation behavior and electrochemical vehavior were studied on implanted and unimplanted samples. The oxidation kinetics of the experimental samples were measured in pure oxygen at 923K and 133.3Pa. The corrosion parameters were measured by anodic polarization methods using a princeton Applied Research Model 350 corrosion measurement system. Auger Electron Spectroscopy (AES) and X-ray Photoelectric Spectroscopy (XPS) were employed to investigate the distribution and the ion valence of oxygen and zirconium ions inside the oxide films before and after implantation. it was found tat: 1) the $Zr^+$ ion implantation (or bombardment) enhanced the oxidation of Zircaloy-4 and resulted in that the oxidation weight gain of the samples at a dose of $8times10^{16}\textrm{ions/cm}^2$ was 4 times greater than that of the unimplantation ones;2) the valence of zirconium ion in the oxide films was classified as $Zr^0,Zr^+,Zr^{2+},Zr^{3+}\; and \;Zr^{4+}$ and the higher vlence of zirconium ion increased after the bombardment ; 3) the anodic passivation current density is about 2 ~ 3 times that of the unimplanted samples; 4) the implantation damage function of the effect of ion implantation on corrosion resistance of Zr-4 alloy was established.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.47 no.4
• /
• pp.13-19
• /
• 2010

MOSFET with deuterium-incorporated gate oxide shows enhanced reliability compared to conventional MOSFET. We present an alternative process whereby deuterium is delivered to the location where the gate oxide reside by an implantation process. Deuterium ions were implanted using two different energies to account for the topography of the overlaying layers and placing the D peak at the top of gate oxide. A short anneal at forming gas was performed to remove the D-implantation damage. We have observed that deuterium ion implantation into the gate oxide region can successfully remove the interface states and the bulk defects. But the energy and the dose of the deuterium implant need to be optimized to maintain the Si substrates dopant activation, while generating deuterium bonds inside gate oxide. CV and IV characteristics studies also determined that the deuterium implant dose not degrade the transistor performance.

• Proceedings of the IEEK Conference
• /
• 2002.06b
• /
• pp.29-32
• /
• 2002

This paper describes a novel structure of NMOSFET with elevated SiGe source/drain region and ultra-shallow source/drain extension(SDE)region. A new ultra-shallow junction formation technology. Which is based on damage-free process for rcplacing of low energy ion implantation, is realized using ultra-high vacuum chemical vapor deposition(UHVCVD) and excimer laser annealing(ELA).

• Proceedings of the Korean Vacuum Society Conference
• /
• 1993.02a
• /
• pp.6-6
• /
• 1993

With brief instroduction of fabrication methods of dia.ond fillls by plasma CVD, recent progress in diamond research mainly done in the author's laboratory at Osaka University is reviewed.especially on the following topics: "low temperature diallond fabrication", "ion implantation", "hydrogen plasma treatment of ion-implanted diaaond to remove ion-induced damage", "Oxygen diffusion into the bulk assisted by the hydrogen treatllent", and "hole-burning effect".ffect".