• Title/Summary/Keyword: imidizing

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Pretilt Angle Properties of Mixture Nematic Liquid crystal for Mobile Information Device (휴대용 통신단말에 사용되는 혼합액정계에서의 프리틸트각 특성에 관한 연구)

  • Han, Jeongmin;Seo, Daeshik
    • Journal of Satellite, Information and Communications
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    • v.10 no.1
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    • pp.67-70
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    • 2015
  • We studied the state of the dual liquid crystal (LC) alignment which displays both homeotropic and homogeneous alignment on blended polyimide (PI) layer. The research was conducted using rubbing method at different imidizing temperatures and the blended PI was made using homeotropic PI having an alkyl side chain and homogeneous PI without the side chain. The uniform LC alignments were achieved, and have thermal stability. The results of contact angles were similar to that of pretilt angles.

Fabrication of Ultrathin Polyimide Films by LB Technique (LB법을 이용한 polyimide 초박막의 제작)

  • Kim, J.H.;Yoo, D.S.;Kim, Y.K.;Shon, B.C.;Kang, D.Y.
    • Proceedings of the KIEE Conference
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    • 1993.11a
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    • pp.174-177
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    • 1993
  • The polyimide films were prepared by imidizing the polyamic acid long-chain alkylamine (dimethylhexadecylamine) salt films with a thermal and chemical treatment, where the polyamic acid alkylamine salt film were formed on various substrates by using Langmuir-Blodgett (LB) method. The imidization of polyamic acid alkylamine salt films with various thickness were identified with FT-IR and UV-visible absorption spectroscopies. Atomic Force Microscopy (AFM) have been used to investigate the surface morpology of polyamic acid alkylamine salt and imidized films.

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A Study on the Electrical Properties of Organic Ultra Thin Films with Polyimide (폴리이미드 유기초박막의 전기적 특성에 관한 연구)

  • Jeong, Soon-Wook;Lim, Hyun-Sung;Yoon, Dong-Han;Jeon, Yoon-Han
    • Journal of the Korean Applied Science and Technology
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    • v.19 no.2
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    • pp.73-78
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    • 2002
  • The polyimide(PI) Langmuir-Blodgett(LB) ultra thin films were prepared by imidizing the PAAS LB films of PMDA and benzidine system with a thermal treatment at $250^{\circ}C$ for 30min, where the PAAS LB films were formed on substrates by using LB technique. The thicknesses of one layer of PAAS and PI LB film that deposited at the surface pressure of 27mN/m were 20.9 and 4A, respectively. At low electric field, ohmic conduction($I^{\propto}$ V) was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}S/cm$. The dielectric constant of LB film was about 7.0.