• The KIPS Transactions:PartD
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• v.18D no.3
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• pp.157-168
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• 2011

Recently flash memory has been being utilized as a main storage device in mobile devices, and flashSSDs are getting popularity as a major storage device in laptop and desktop computers, and even in enterprise-level server machines. Unlike HDDs, on flash memory, the overwrite operation is not able to be performed unless it is preceded by the erase operation to the same block. To address this, FTL(Flash memory Translation Layer) is employed on flash memory. Even though the modified data block is overwritten to the same logical address, FTL writes the updated data block to the different physical address from the previous one, mapping the logical address to the new physical address. This enables flash memory to avoid the high block-erase cost. A flashSSD has an array of NAND flash memory packages so it can access one or more flash memory packages in parallel at once. To take advantage of the internal parallelism of flashSSDs, it is beneficial for DBMSs to request I/O operations on sequential logical addresses. However, the B-tree structure, which is a representative index scheme of current relational DBMSs, produces excessive I/O operations in random order when its node structures are updated. Therefore, the original b-tree is not favorable to SSD. In this paper, we propose AS(Always Sequential) B-tree that writes the updated node contiguously to the previously written node in the logical address for every update operation. In the experiments, AS B-tree enhanced 21% of B-tree's insertion performance.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2007.06a
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• pp.515-516
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• 2007

• Journal of KIISE:Computer Systems and Theory
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• v.36 no.5
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• pp.412-421
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• 2009

Due to the physical characteristics of NAND flash memory, overwrite operations are not permitted at the same location, and therefore erase operations are required prior to rewriting. These extra operations cause performance degradation of NAND flash memory file system. Since it also has an upper limit to the number of erase operations for a specific location, frequent erases should reduce the lifetime of NAND flash memory. These problems can be resolved by delaying write operations in order to improve I/O performance: however, it will lower the cache hit ratio. This paper proposes a policy of page management using double cache for NAND flash memory file system. Double cache consists of Real cache and Ghost cache to analyze page reference patterns. This policy attempts to delay write operations in Ghost cache to maintain the hit ratio in Real cache. It can also improve write performance by reducing the search time for dirty pages, since Ghost cache consists of Dirty and Clean list. We find that the hit ratio and I/O performance of our policy are improved by 20.57% and 20.59% in average, respectively, when comparing them with the existing policies. The number of write operations is also reduced by 30.75% in average, compared with of the existing policies.

• Proceedings of the Korean Society of Computer Information Conference
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• 2014.07a
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• pp.235-236
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• 2014

플래시 메모리 기술이 발전함에 따라 낸드 플래시 기반의 SSD가 상용화 되면서 I/O시간을 줄이기 위한 연구들이 진행되고 있다. 이에 본 논문에서는 기존의 메인 메모리와 저장장치 사이에 확장 버퍼 캐시로써 SSD를 사용하고 메인 메모리에서 방출 된 페이지들을 구분하여 같은 성향의 페이지들을 블록화 하는 모델을 제안한다. 이러한 모델을 통하여 블록 단위로 사용되는 SSD를 효율적으로 이용하여 읽기 및 쓰기 성능을 높이고 I/O에 해당하는 시간들을 줄임으로써 전체적인 성능 향상을 증명하였다.

• Fire Science and Engineering
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• v.13 no.1
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• pp.11-19
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• 1999

The flash point is generally used as a hazardous index of fire and explosion of a flammable liquid. A classification of the flash points is important for the safe handling of flammable liquids such as solvent mixtures. The flash points of pure substances and solvent mixtures can be c calculated with the appropriate use of the fundamental laws of Raoult, Dalton, Le Chatelier and a activity coefficient models. In this study, experimentally determined lower and upper flash points w were compared with the calculated values by using Raoult's law and van Laar equation. The flash points of pure substances were in agreement with the calculated values by vapor pressure and e explosive limits. Also, the lower flash points of M.E.K(methylethylketone)-toluene system were i in agreement with the predicted values by Raoult’s law, and the upper flash points were in a agreement with the predicted values by van Laar equation. By means of this methodology, it is possible to evaluate reliability of expermental data of the flash points of the flammable mixtures.

• The KIPS Transactions:PartA
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• v.14A no.4
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• pp.235-244
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• 2007

Caching and prefetching policies have been used in most of computer systems to compensate speed differences between primary memory and secondary storage devices. In this paper, we design and implement a Flash Cache Core Module(FCCM) on the YAFFS which operates on a file system layer for NAND flash memory. The FCCM is independent of the underlying kernel in order to support its stability and compatibility. Also, we implement the Dirty-Last memory replacement technique considering the characteristics of flash memory, and the waiting queue for pages to be prefetched according to page hit. The FCCM reduced the number of I/Os and the amount of prefetched pages by maximum 55%(20% on average) and maximum 55%(24% on average), respectively, comparing with caching and prefetching policies of Linux.

• Journal of KIISE:Computing Practices and Letters
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• v.13 no.4
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• pp.213-225
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• 2007

Flash memory is widely used as a storage device for potable equipments such as digital cameras, MP3 players and cellular phones because of its characteristics such as its large volume and nonvolatile feature, low power consumption, and good performance. However, a block in flash memories should be erased to write because of its hardware characteristic which is called as erase-before-write architecture. The erase operation is much slower than read or write operations. FTL is used to overcome this problem. We compared the performance of the existing FTL algorithms on Windows-based OS. We have developed a tool called FTL APAT in order to gather I/O patterns of the disk and analyze the performance of the FTL algorithms. It is the log buffer scheme with full associative sector translation(FAST) that the performance is best.

• KIEE International Transactions on Electrophysics and Applications
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• v.5C no.1
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• pp.14-17
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• 2005

In this paper, an automated methodology for generating model parameters considering real manufacturing processes is presented with verified results. In addition, the outcomes of applications to the next generation of flash memory devices using the parameters calibrated from the process specification decision are analyzed. The test vehicle is replaced with a well-calibrated TCAD simulation. First, the calibration methodology is introduced and tested for a flash memory device. The calibration errors are less than 5% of a full chip operation, which is acceptable to designers. The results of the calibration are then used to predict the I-V curves and the model parameters of various transistors for the design of flash devices.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2005.10a
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• pp.109-112
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• 2005

Friction welding is welding method to use frictional heat of two material. A defect of friction welding is that create flash. The flash is part that must have cut after welding finished. But the welding part with flow gallery by friction welding can't cut flash. Therefore the welding part with flow gallery was designed with no effect in flow. In this research, decide the welding shape parameter of welding part with flow gallery and do friction welding analysis. In friction welding analysis, must input necessary S-S curve, friction coefficient by temperature change, upset pressure, RPM etc. According to analysis result, decided the optimal shape of welding part with no effect in flow.

• Proceedings of the IEEK Conference
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• 2006.06a
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• pp.777-778
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• 2006

In this thesis, we design and implement a Flash Cache Core Module (FCCM) which operates on the YAFFS NAND flash memory. The FCCM applies memory replacement policy and prefetching policy based on the page reference pattern of applications. Also, implement the Clean-First memory replacement technique considering the characteristics of flash memory. In this method the decision is made according to page hit to apply prefetched waiting area. The FCCM decrease I/O hit frequency up to 37%, Compared with the linux cache and prefetching policy. Also, it operated using less memory for prefetching(maximum 24% and average 16%) compared with the linux kernel.