• Journal of the Korean Institute of Landscape Architecture
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• v.21 no.2
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• pp.34-49
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• 1993

This research aimed to analize the cognitive intensity of valuation(C.I.V) on urban environment as a first stage of the works on evaluative urban image under the hypothesis that it could be interpreted with a correlation analysis between the C.I.V and attitude(Satisfaction of unsatisfaction Intensity) toward urban environment. As a method of a study, 118 cognitive elements were selected representing an urban environment, and each of elements was suggested to citizens of Kyungju with 7 point Likert Scale. The analysis of C.I.V was operated under the three criteria: The first, three of urban space scale(urban scale, neighborhood scale, and housing scale), the second, four elements of urban living environment(safety, amenity, healthfulness, and effectiveness), and the last, thirteen urban unit environment(housing, traffic, education, tourism, medical/health, culture, etc.). The results were as follows: C.I.V to each of 118 elements was cleary defined, showing the possibilities of being applied to a method for subjective, or cognitive evaluation on urban environment: It was revealed that citizens'C.I.V was rather higher in non-physical, qualitative elements than in physical and quantitative ones. This shows well the limitation of the objective method of evaluation of urban environment: The results of the others' studies on the image of Kyungju based on the cognitive approach, being focused on the analysis of the visual aspects of urban structure, cultural assets, historic site and tourism, were almost same as this study but it was quite different for this research to reveal well the citizens' cognition on their living environment of traffic, education, medical, etc..

• Journal of the Korean Geotechnical Society
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• v.23 no.7
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• pp.87-98
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• 2007

A series of dilatometer test, field vane test, and $CK_0U$ triaxial test were performed for clayey soils of Busan new port site to develop the relationships between undrained shear strength and the DMT results. Normalized undrained shear strength is turned out to be $S_{u(CKU)}/{\sigma}'_v=0.30{\sim}0.35\;for\;CK_0U$ triaxial test and ${\mu}S_{u(VST)}/{\sigma}'_v=0.20{\sim}0.22$ for vane shear test. By comparing the undrained shear strength estimated from DMT indices with the results measured by in-situ vane test or $CK_0U$ triaxial test, two methods to predict the undrained shear strength from DMT results are suggested. One is based on the relationship between $S_u/{\sigma}'_v$ and horizontal stress index (KD) while another method comes from $N_c-I_D$ and $N_c-E_D$ correlation. It was observed that the method based on $N_c-I_D\;or\;N_c-E_D$ relation shows slightly better accuracy than the one based on $K_D$ although all of the methods suggested in this study provided comparable values of predicted undrained shear strength. Since the definitions of $I_D\;and\;E_D$ contain $p_1-p_0$, in which soil condition is reflected, it is believed that the prediction method using $N_c$ is capable of taking a material type into consideration.

• Journal of IKEEE
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• v.18 no.4
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• pp.447-455
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• 2014

In this research, n-based 4H-MOS Capacitor was fabricated with PECVD (plasma enhanced chemical vapor deposition) process for improving SiC/$SiO_2$ interface properties known as main problem of 4H-SiC MOSFET. To overcome the problems of dry oxidation process such as lower growth rate, high interface trap density and low critical electric field of $SiO_2$, PECVD and NO annealing processes are used to MOS Capacitor fabrication. After fabrication, MOS Capacitor's interface properties were measured and evaluated by hi-lo C-V measure, I-V measure and SIMS. As a result of comparing the interface properties with the dry oxidation case, improved interface and oxide properties such as 20% reduced flatband voltage shift, 25% reduced effective oxide charge density, increased oxide breakdown field of 8MV/cm and best effective barrier height of 1.57eV, 69.05% reduced interface trap density in the range of 0.375~0.495eV under the conduction band are observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.284-284
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• 2012

본 연구에서는 다이오드 소자의 온도 증가에 따른 C-V 특성을 분석하였다. 180 kHz 주파수 조건에서 온도는 300 K에서 450 K까지 50 K 간격으로 가변하였다. 측정 결과 reverse bias 영역에서는 커패시턴스의 온도 의존성이 없었으나, forward bias 영역에서는 온도가 증가함에 따라 동일 전압에서의 커패시턴스가 증가하였다. 이로부터 온도가 증가 할수록 소자가 반전(inversion) 상태에서 축적(accumulation) 상태로 빨리 전환함을 확인하였으며, 1/C2-V 그래프로부터 온도 증가에 따른 전위장벽(Built-in potential, Vbi) 감소를 확인하였다. 전위장벽은 0.63 V에서 0.31 V로 온도 상승에 따라 약 0.1 V씩 감소하였다. 이는 energy band diagram에서 p-type 영역과 n-type 영역의 energy band 차가 감소해 공핍층 영역의 폭이 좁아짐을 의미한다. 공핍층의 두께 감소로 다이오드 전류의 급격한 증가뿐 아니라 위에서 언급한 바와 같은 C-V 특성을 보였다. 이번 연구에서는 기존의 보편화 된 I-V 측정을 통한 다이오드 소자 분석과는 달리 온도 변화에 따른 C-V 분석을 통해 소자 내부의 전위 장벽 및 공핍층 폭 감소에 따른 소자 특성 변화를 분석하였다.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.110-110
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• 1998

GaN는 직접천이형 에너지 캡을 가지며 In과 화합물을 형성할 경우 1.geV-3.4eV까지 다양한 에너지 캡을 가지므로 청색 발광소자 고출력소자 고온 전자소자둥 웅용성이 많 은 물절로서 각광을 받고 있다. 그러나 G랴‘에 적합한 기판이 없다는 문제점으로 인하여 F FET, LD와 같은 다양한 구조의 웅용에 제 약이 따랐다. 이에 본 연구에서는 RF(radio frequency) Plasma-Assisted MBE( molecular beam e epitaxy )를 이용하여 InxGaj xN/G암J 양자우물 구조를 성장하였다. 이렇게 성장된 I InxGaj xN 박막과 InxGaj xN/GaN 양자우물구조의 특성의 분석은 광학적 특성올 PL( p photoluminescence ) , 결 정 성 의 분석 은 XRD ( x-ray diffraction ), 표면 과 단변 의 계 변 특성은 SEM(scanning electron microscopy)을 이용하여 분석하였다. 저온 PL의 측정결 과 기판온도를 680$^{\circ}$C로 고정한 후 In cell의 온도를 650$^{\circ}$C에서 775$^{\circ}$C까지 증가함에 따라 I InxGaj xN에 관계된 피크위치가 약3이neV정도 red shift 함을 관찰할 수 있었다. 한편 I InxGaj xN/GaN 양자우물구조의 경우 PL피크가 3.2없eV로써 InxGaj- xN의 PL 피크에 비 해 에서 약 25me V 고에너지 이동이 관측되었으며 이것은 우불 내에서 에너지레벨의 c confinement효과에 의해 에너지의 변화에 의한 것엄올 확인하였으며, 양자우물 구조에서 우물의 두께를 줄임에 따라 변화 폭은 1이neV정도 고에너지 이동을 관찰할 수 있었다. X XRD 측정의 결과 In의 mole fraction에 따라 격자상수의 변화를 관찰하였으며, 결정 성의 변화를 피크의 세기로 관찰하였다 .. XRD로 판단한 In의 mole fraction은 0.2임을 알 았다 .. SEM 측정은 표변과 단면의 측정으로서 표연특성과 단면의 특성을 InxGaj xN, I InxGaj xN/GaN 양자우물 구조 모두 알아보았다. 측정 결과 InxGaj-xN의 성 장조건으로 기판온도가 낮아지면서 표면의 거칠기 정도가 증가하였으며,680$^{\circ}$C의 기판온도에서 성장 한 양자우물 구조에 있어서 매끄라운 표면올 얻올 수 있었다.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.111-116
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• 2004

The Ni/SiC Schottky diode was fabricated with the $\alpha$-SiC thin film grown by the ICP-CVD method on a (111) Si wafer. $\alpha$-SiC film has been grown on a carbonized Si layer in which the Si surface was chemically converted to a very thin SiC layer achieved using an ICP-CVD method at $700^{\circ}C$. To reduce defects between the Si and $\alpha$-SiC, the surface of the Si wafer was slightly carbonized. The film characteristics of $\alpha$-SiC were investigated by employing TEM (Transmission Electron Microscopy) and FT-IR (Fourier Transform Infrared Spectroscopy). Sputterd Ni thin film was used as the anode metal. The boundary status of the Ni/SiC contact was investigated by AES (Auger Electron Spectroscopy) as a function of the annealing temperature. It is shown that the ohmic contact could be acquired beyond a 100$0^{\circ}C$ annealing temperature. The forward voltage drop at 100A/cm was I.0V. The breakdown voltage of the Ni/$\alpha$-SiC Schottky diode was 545 V, which is five times larger than the ideal breakdown voltage of the silicon device. As well, the dependence of barrier height on temperature was observed. The barrier height from C- V characteristics was higher than those from I-V.

• Journal of Electrical Engineering and Technology
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• v.9 no.1
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• pp.280-285
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• 2014

In order to evaluate the insulation deterioration in the stator windings of five gas turbine generators(137 MVA, 13.8 kV) which has been operated for more than 13 years, diagnostic test and AC dielectric breakdown test were performed at phases A, B and C. These tests included measurements of AC current, dissipation factor, partial discharge (PD) magnitude and capacitance. ${\Delta}I$ and ${\Delta}tan{\delta}$ in all three phases (A, B and C) of No. 1 generator stator windings showed that they were in good condition but PD magnitude indicated marginally serviceable and bad level to the insulation condition. Overall analysis of the results suggested that the generator stator windings were indicated serious insulation deterioration and patterns of the PD in all three phases were analyzed to be internal, slot and spark discharges. After the diagnostic test, an AC overvoltage test was performed by gradually increasing the voltage applied to the generator stator windings until electrical insulation failure occurred, in order to determine the breakdown voltage. The breakdown voltage at phases A, B and C of No. 1 generator stator windings failed at 28.0 kV, 17.9 kV, and 21.3 kV, respectively. The breakdown voltage was lower than that expected for good-quality windings (28.6 kV) in a 13.8kV class generator. In the AC dielectric breakdown and diagnostic tests, there was a strong correlation between the breakdown voltage and the voltage at which charging current increases abruptly ($P_{i1}$, $P_{i2}$).

• The Korean Journal of Pharmacology
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• v.21 no.2
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• pp.119-127
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• 1985

The renal function is under regulatory influence of the central nervous system, mainly through activation of sympathetic nerve to the kidney, and it was recently reported that clonidine, an agonist to ${\alpha}_2$-adrenoceptors, induces diuresis and natriuresis when injected directly into a lateral ventricle of the rabbit brain (i.c.v.). This study was undertaken, therefore, to obtain further information as to the role of the central ${\alpha}_2$-adrenoceptors in regulating renal function, by observing the effects of i.c.v. yohimbine, a specific antagonist of adrenoceptors of ${\alpha}_2$-type, on the rabbit renal function, and to elucidate the mechanism involved in it. With 10 ${\mu}g/kg$ i.c.v. of yohimbine sodium excretion transiently increased along with increasing tendency of urine flow, renal plasma flow and glomerular filtration rate. These responses decreased with increasing doses. With 100 and 300 ${\mu}g/kg$ i.c.v. marked antidiuresis and antinatriuresis as well as profound decreases of renal perfusion and glomerular filtration were noted. Systemic blood pressure transiently increased. In reserpinized rabbits, 100 ${\mu}g/kg$ yohimbine i.c.v. did not produce any significant changes in urine flow, sodium excretion as well as in renal hemodynamics. The pressor response was also abolished. In preparations in which one kidney was denervated and the other left intact as control, i.c.v. yohimbine elicited typical antidiuretic antinatriuretic response in the innervated control kidney, whereas the denervated experimental kidney responded with marked diuresis and increases in excretory rates of sodium and potassium and in osmolar clearance in spite of absence of increased filtration and perfusion . Systemic blood pressure responded as in the normal rabbits. These observations indicate that i.c.v. yohimbine affects renal function in dual ways in opposite directions, the first being the antidiuretic antinatriuretic effects which results from decreased renal perfusion and glomerular filtration due to sympathetic activation and which is predominantly expressed in the normal rabbits, and the second less apparent effect being the diuretic and natriuretic action which is not mediated by nerve pathway but brought about by some humoral mechanism and which is effected by decreased sodium reabsorption in the tubules, possibly of the proximal portion.

• Korean Journal of Materials Research
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• v.3 no.4
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• pp.388-394
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• 1993

The state of aggregation and optical contrast of poly(vinyl chlorich, )(PVC)!nematic liquid crystal(LC) composite film liave been studied for a wide range(30~70 wt% LC)of film composition. In addition. effects of temperature, frequency and voltage of the applied AV electric field on the film transmittance have heen measured for a film containing (6O wt % I, C, which showed maximum optical contrast. For this particular composition of film, tlw thn'shold voltage was smalkr than .40$V_{p-p}$ at I kHZ, $25^{\circ}C$, and the rise time and decay time were smalle, r than l0Oms at 100$V_{p-p}$, I kHz, and $25^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.05b
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• pp.179-184
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• 2000

The I-V characteristics of $ZnO-Pr_6O_{11}-CoO-Dy_2O_3$ based varistors were investigated in the $Pr_6O_{11}/CoO$ composition ratio range of 0.5/0.5 to 1.0/1.0 and sintering temperature range of 1300 to $1350^{\circ}C$ as the basic study to develop the advanced $Pr_6O_{11}$-based ZnO varistors. All varistors except for $Pr_6O_{11}$/CoO = 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. However, the varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 exhibited the best I-V characteristics at $1350^{\circ}C$. The varistors with $Pr_6O_{11}$/CoO= 0.5/1.0 of all varistors exhibited the best I-V characteristics, which the nonlinear exponent is 36.9 and the leakage current is 7.6 ${\mu}A$ Therefore, it was estimated that ZnO-$Pr_6O_{11}-CoO-Dy_2O_3$ ceramics with $Pr_6O_{11}$/CoO= 0.5/1.0 will be usefully used as varistor materials in the future.