• Electrical & Electronic Materials
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• v.10 no.8
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• pp.800-806
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• 1997

The behavior of de levels in rapid thermal annealed Fe-doped semi-insulating InP(100) was studied by photoinduced current transient spectrocopy(PICTS). In bulk InP, T2(Ec-0.24 eV), T3(Ec-0.30 eV) and T5(Ec-0.62 eV) traps were observed. After annealing the T2 trap was annihilated at 20$0^{\circ}C$ and recreated at 35$0^{\circ}C$. T3 trap was not affected below 40$0^{\circ}C$. With increasing temperature the concentration of T5 trap reduced and it was annihilated at 30$0^{\circ}C$. However the T1(Ec-0.16 eV) and T4(Ec-0.42 eV) traps were began to appear at 40$0^{\circ}C$and these concentrations were increased with annealing temperature. The T1 and T4 traps seem to be related to the isolated phosphorus vacancy( $V_{p}$) and $V_{p}$-indium antisite( $V_{p}$- $P_{in}$ ) or $V_{p}$-indium interstitial( $V_{p}$-I $n_{I}$) respectiely.respectiely.

• Journal of Veterinary Science
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• v.21 no.2
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• pp.32.1-32.13
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• 2020

Levofloxacin pharmacokinetic profiles were evaluated in 6 healthy female rabbits after intravenous (I/V), intramuscular (I/M), or subcutaneous (S/C) administration routes at a single dose of 5 mg/kg in a 3 × 3 cross-over study. Plasma levofloxacin concentrations were detected using a validated Ultra Performance Liquid Chromatography method with a fluorescence detector. Levofloxacin was quantifiable up to 10 h post-drug administration. Mean AUC_0-last values of 9.03 ± 2.66, 9.07 ± 1.80, and 9.28 ± 1.56 mg/h^*L were obtained via I/V, I/M, and S/C, respectively. Plasma clearance was 0.6 mL/g*h after I/V administration. Peak plasma concentrations using the I/M and S/C routes were 3.33 ± 0.39 and 2.91 ± 0.56 ㎍/mL. Bioavailability values, after extravascular administration were complete, - 105% ± 27% (I/M) and 118% ± 40% (S/C). Average extraction ratio of levofloxacin after I/V administration was 7%. Additionally, levofloxacin administration effects on tear production and osmolarity were evaluated. Tear osmolarity decreased within 48 h post-drug administration. All 3 levofloxacin administration routes produced similar pharmacokinetic profiles. The studied dose is unlikely to be effective in rabbits; however, it was calculated that a daily dose of 29 mg/kg appears effective for I/V administration for pathogens with MIC < 0.5 ㎍/mL.

• ETRI Journal
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• v.27 no.3
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• pp.319-325
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• 2005

In this paper the effect of temperature on the electrical properties of organic semiconductor disperse orange dye 25 (OD) have been examined. Thin films of OD have been deposited on $In_{2}O_{3}$ substrates using a centrifugal machine. DC current-voltage (I-V) characteristics of the fabricated devices $(Al/OD/In_{2}O_{3)$ have been evaluated at varying temperatures ranging from 40 to $60^{\circ}C$. A rectification behavior in these devices has been observed such that the rectifying ratio increases as a function of temperature. I-V characteristics observed in $Al/OD/In_{2}O_{3)$ devices have been classified as low temperature $({\leq} 50^{\circ}C)$ and high temperature characteristics (approximately $60^{\circ}C$). Low temperature characteristics have been explained on the basis of the charge transport mechanism associated with free carriers available in OD, whereas high temperature characteristics have been explained on the basis of the trapped space-charge-limited current. Different electrical parameters such as traps factor, free carrier density, trapped carrier density, trap density of states, and effective mobility have been determined from the observed temperature dependent I-V characteristics. It has been shown that the traps factor, effective mobility, and free carrier density increase with increasing values of temperature, whilst no significant change has been observed in the trap density of states.

• Communications of the Korean Mathematical Society
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• v.35 no.1
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• pp.1-12
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• 2020

A pathos block line cut-vertex graph of a tree T, written P BL_c(T), is a graph whose vertices are the blocks, cut-vertices, and paths of a pathos of T, with two vertices of P BL_c(T) adjacent whenever the corresponding blocks of T have a vertex in common or the edge lies on the corresponding path of the pathos or one corresponds to a block B_i of T and the other corresponds to a cut-vertex c_j of T such that c_j is in B_i; two distinct pathos vertices P_m and P_n of P BL_c(T) are adjacent whenever the corresponding paths of the pathos P_m(v_i, v_j) and P_n(v_k, v_l) have a common vertex. We study the properties of P BL_c(T) and present the characterization of graphs whose P BL_c(T) are planar; outerplanar; maximal outerplanar; minimally nonouterplanar; eulerian; and hamiltonian. We further show that for any tree T, the crossing number of P BL_c(T) can never be one.

• KIEE International Transactions on Electrophysics and Applications
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• v.2C no.5
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• pp.258-261
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• 2002

Electrical forming dependent current-voltage (I-V) and numerically derived differential conductance(dI／dV) characteristics have been presented in the multi-layer nano-crystalline silicon／oxygen (no-Si／O) superlattice. Distinct staircase-like features, indicating the presence of resonant tunnel barriers, are clearly observed in the dc I-V characteristics. Also, all samples showed a continuous change in current and zero conductivity around OV corresponding to the Coulomb blockade in the calculated dI／dV-V curve. Also, Ra-man scattering measurement showed the presence of a nano-crystalline Si structure. This result becomes a step in the right direction for the fabrication of silicon-based optoelectronic and quantum devices as well as for the replacement of silicon-on-insulator (SOI) in high speed and low power silicon MOSFET devices of the future.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.11
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• pp.908-913
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• 2000

CoSi$_2$/p+/n diodes(bilayer diodes) were fabricated by using epitaxial CoSi$_2$grown from Co/Ti bilayer as a diffusion source. The I-V characteristics of p+/n diodes were measured and compared with those of diode made from Co monolayer (monolayer diode). Monolayer diodes showed typical p+n junction characteristics with the leakage current of as low as 10$^{-12}$ A and forward current 6-orders higher than the leakage current, when drive-in annealed at 90$0^{\circ}C$ for 20 sec.. On the other hand, bilayer diodes showed the Schottky-like behaviors with forward currents rather higher than those of monolyer diodes, but with too high leakage currents, when drive-in annealed at $700^{\circ}C$ or higher. However, when the annealing temperature was lowered to $700^{\circ}C$ and annealing time was increased to 60 sec., the leakage current was reduced to 10$^{-11}$ A and thus sho3wed typical diode characteristics. The high leakage currents for diodes annealed at $700^{\circ}C$ or higher was attributed to Shannon contacts formed due to unremoved Co-Ti-Si precipitates. But when annealed at 50$0^{\circ}C$, B ions diffused in the direction of the surface layer, and thus the leakage currents were reduced by removing Shannon contacts.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.18 no.5
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• pp.126-141
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• 2019

One of the Cooperative Intelligent Transportation System(C-ITS) priority services is collision prevention support service. Several studies have considered V2I2V communication-based collision prevention support services using Artificial Neural Networks(ANN). However, such services still show some issues due to a low penetration of C-ITS devices and large delay, particularly when loading massive traffic data into the server in the C-ITS center. This study proposes the Artificial Neural Network-based Collision Warning Service(ACWS), which allows upstream vehicle to update pre-determined weights involved in the ANN by using real-time sectional traffic information. This research evaluates the proposed service with respect to various penetration rates and delays. The evaluation result shows the performance of the ACWS increases as the penetration rate of the C-ITS devices in the vehicles increases or the delay decreases. Furthermore, it reveals a better performance is observed in more advanced ANN model-based ACWS for any given set of conditions.

• Textile Coloration and Finishing
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• v.19 no.3
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• pp.18-25
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• 2007

The fixing behaviors of anthraquinone disperse dyes containing dimethylamino substituent, such as C. I. Disperse Violet 26(D.V.26) and C. I. Disperse Blue 14(D.V.14), or containing diamino substituent, such as C. I. Disperse Blue 73(D.B.73), and monochlorotriazinyl azo reactive dyes, such as C. I. Reactive Orange 13(R.O.13), C. I. Reactive Red 3(R.R.3). C. I. Reactive Yellow 2(R.Y.2) on polyester/cotton blend(P/C) fabrics were examined for the one-step printing of P/C fabrics. The high temperature steaming of $175^{\circ}C$ is the most satisfactory fixing method for P/C one-step printing with above disperse and reactive dyes among the four different fixing methods: $175^{\circ}C$ steaming, $102^{\circ}C$ steaming${\rightarrow}175^{\circ}C$ steaming, $190^{\circ}C$ thermosol, $102^{\circ}C$ steaming${\rightarrow}190^{\circ}C$ thermosol. $190^{\circ}C$ thermosol is unfit to fix R.R.3 and R.Y.2 whose heat stability is poor. It was found that D.V.26 and D.B.14 containing dimethylamino substituent are unstable for heat and alkali, but D.B.73 is stable for them to print P/C blend fabrics with R.O.13 which is also stable for heat. Therefore we found that D.B.73, R.O.13 and a pair of D.B.73 and R.O.13 were very suitable for one-step printing of P/C blend fabrics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.975-978
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• 2003

The microwave dielectric properties and the microstructures on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ doped with $V_2$ $O_{5}$ were systematically investigated. B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics sintered at 920-96$0^{\circ}C$ were mainly consisted of orthorhombic and triclinic phases after addition of $V_2$ $O_{5}$. The apparent density increased slightly with increasing the $V_2$ $O_{5}$ addition. The dielectric constants($\varepsilon$$_{r}$) also increased with $V_2$ $O_{5}$ addition(30-45). The Q${\times}$ $f_{0}$ values measured on B $i_{0.97}$T $m_{0.03}$Nb $O_4$ ceramics doped with $V_2$ $O_{5}$ were between 2,000 and 12,000[GHz] when the sintering temperatures were in the range of 920-960[$^{\circ}C$]. It was confirmed that the temperature coefficient of the resonant frequency($\tau$$_{f}$) can be adjusted from a positive value of +10ppm/$^{\circ}C$ to a negative value of -15ppm/$^{\circ}C$ by increasing the amount of $V_2$ $O_{5}$ Based on our experimental results, the B $i_{0.97}$T $m_{0.03}$Nb $O_4$(added $V_2$ $O_{5}$) ceramics can be applied to multilayer microwave devices at low sintering temperatures.ng temperatures.emperatures.ratures.

• Archives of Pharmacal Research
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• v.12 no.4
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• pp.282-288
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• 1989

This study was investigated the effects of imipramine (IMI) and electroconvulsive shock (ECS), which are used as antidepressant therapy, on the central $\beta_1$or $\beta_2$ adrenergic receptor in anesthetized rats. The resting blood pressure and heart rate decreased in reserpinized group (5 mg/kg i. p., 24 hr before), but not in order 4 groups i. e. acute IMI (20 mg/kg i. p.. 3-5 hr before), chronic IMI (Same dose, twice a day for 14 days), siggle ECS (sinusoidal 20 Hz, 120 V for 2 sec) and repeated ECS (same condition, daily for 12 days). The increase of heart rate and hypotension evoked by 1 or 3 $\mu$g intracerebroventricular (i. c. v.) administration of (+) dobutamine, $\beta_2$-agonist, 1 or 3 $\mu$g i. c. v. was significantly attenuated in repeated ECS or reserpine treatment. And, the diminuation of pulse pressure of salbutamol also reduced by repeated ECS. These results suggest that IMI or ECS result in attenuation on tachycardia by (+) dobutamine or on hypotension by salbutamol, presumably by which the central $\beta_1$ or $\beta_2$receptor sensitivity may be suppressed, repectively.