• Title/Summary/Keyword: i-layer

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Electrical Characteristics of Triple-Gate RSO Power MOSFET (TGRMOS) with Various Gate Configurations and Bias Conditions

  • Na, Kyoung Il;Won, Jongil;Koo, Jin-Gun;Kim, Sang Gi;Kim, Jongdae;Yang, Yil Suk;Lee, Jin Ho
    • ETRI Journal
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    • v.35 no.3
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    • pp.425-430
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    • 2013
  • In this paper, we propose a triple-gate trench power MOSFET (TGRMOS) that is made through a modified RESURF stepped oxide (RSO) process, that is, the nitride_RSO process. The electrical characteristics of TGRMOSs, such as the blocking voltage ($BV_{DS}$) and on-state current ($I_{D,MAX}$), are strongly dependent on the gate configuration and its bias condition. In the nitride_RSO process, the thick single insulation layer ($SiO_2$) of a conventional RSO power MOSFET is changed to a multilayered insulator ($SiO_2/SiN_x/TEOS$). The inserted $SiN_x$ layer can create the selective etching of the TEOS layer between the gate oxide and poly-Si layers. After additional oxidation and the poly-Si filling processes, the gates are automatically separated into three parts. Moreover, to confirm the variation in the electrical properties of TGRMOSs, such as $BV_{DS}$ and $I_{D,MAX}$, simulation studies are performed on the function of the gate configurations and their bias conditions. $BV_{DS}$ and $I_{D,MAX}$ are controlled from 87 V to 152 V and from 0.14 mA to 0.24 mA at a 15-V gate voltage. This $I_{D,MAX}$ variation indicates the specific on-resistance modulation.

Prediction of Defect Size of Steam Generator Tube in Nuclear Power Plant Using Neural Network (신경회로망을 이용한 원전SG 세관 결함크기 예측)

  • Han, Ki-Won;Jo, Nam-Hoon;Lee, Hyang-Beom
    • Journal of the Korean Society for Nondestructive Testing
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    • v.27 no.5
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    • pp.383-392
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    • 2007
  • In this paper, we study the prediction of depth and width of a defect in steam generator tube in nuclear power plant using neural network. To this end, we first generate eddy current testing (ECT) signals for 4 defect patterns of SG tube: I-In type, I-Out type, V-In type, and V-Out type. In particular, we generate 400 ECT signals for various widths and depths for each defect type by the numerical analysis program based on finite element modeling. From those generated ECT signals, we extract new feature vectors for the prediction of defect size, which include the angle between the two points where the maximum impedance and half the maximum impedance are achieved. Using the extracted feature vector, multi-layer perceptron with one hidden layer is used to predict the size of defects. Through the computer simulation study, it is shown that the proposed method achieves decent prediction performance in terms of maximum error and mean absolute percentage error (MAPE).

Morphological Study on the Osphradium of Rapana venosa (Gastropoda : Muricidae) (피뿔고동 ( Rapana venosa Valenciennes )의 Osphardium 에 관한 형태학적 연구)

  • 이정재;김성훈
    • The Korean Journal of Malacology
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    • v.4 no.1
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    • pp.1-16
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    • 1988
  • The authors observed histochemical and ultrastructural characters on the osphradium of Rapana venosa Valenciennes using light microscope, scanning and transmission electron microscpes. The results were as follows:1)The basic structure of osphradium was bipectinated shape, which consisted of a septum situating in the center of osphradium and numerous osphradial leaflets. On the other hand, Epidermis of ospradial leaflets formed the structure of pseudostratified ciliated columnar epithelium which was composed of an epithelial cell layer, a basal cel layer and a neuropile. 2) Ciliated dpithelial cells:A large number of these cells were observed on the lateral and ventral regions but a small number of them were observed on the dorsal region. These cells had cylindrical microvilli, slender mitochondria and serve fibers.3) Supporting cells: These cells had cylindrical microvilli, spongy layer, electron dense granules, mitochondria and nerve fibers4) Four types secretory epothelial cells: Four distinct types of secretory epithelial cells were recognized and were arbitrily designated as Type I, Type II, Type III and Type IV.cell type I: These cells contained electron denwe granules(diameter, 0.94-1.56${\mu}{\textrm}{m}$), well developed Golgi apparatus and rough endoplasmic reticula, cell type II: These cills contained two types of granules of the different electron density. One was high electron density granules which were 0.4-1.0${\mu}{\textrm}{m}$ in diameter, The other was low electron density granules which were 0.75-1.2${\mu}{\textrm}{m}$ in diameter.cell type III:These cells had fibrous secretory materials and exhibited strongly positive reaction with Toluidine blue.cell type IV:A large number of this type of cells were observed on the ventral region of ospgradial leaflets and positively reacted with periodic acid Schiff reagent. 5)Dark cells contained several electron dense cillaty rootlets and unmerous granules but cellular organelles were not observed.6) Four types basal cells: Four distinci types of basal cells were recognized and arbitrarily designated as Type I, Type II, Type III and Type IV.Cell type I(light cell): These cells exhibited low electuon density and contained short smooth endoplasmic reticula, several vacuoles and granules.

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Fabrication of a Depletion mode n-channel GaAs MOSFET using $Al_2O_3$ as a gate insulator ($Al_2O_3$ 절연막을 게이트 절연막으로 이용한 공핍형 n-채널 GaAs MOSFET의 제조)

  • Jun, Bon-Keun;Lee, Suk-Hyun;Lee, Jung-Hee;Lee, Yong-Hyun
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.1
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    • pp.1-7
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    • 2000
  • In this paper, we present n-channel GaAs MOSFET having $Al_2O_3$ as gate in insulator fabricated on a semi-insulating GaAs substrate. 1 ${\mu}$m thick undoped GaAs buffer layer, 1500 ${\AA}$ thick n-type GaAs, undoped 500 ${\AA}$ thick AlAs layer, and 50 ${\AA}$ GaAs caplayer were subsequently grown by molecular beam epitaxy(MBE) on (100) oriented semi-insulating GaAs substrate oxidized. When it was wet oxidized, AlAs layer was fully converted $Al_2O_3$. The I-V, $g_m$, breakdown charateristics of the fabricated GaAs MOSFET showed that wet thermal oxidation of AlAs/GaAs epilayer/S${\cdot}$I GaAs was suitable in realizing depletion mode GaAs MOSFET.

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Development of Autonomous Algorithm Using an Online Feedback-Error Learning Based Neural Network for Nonholonomic Mobile Robots (온라인 피드백 에러 학습을 이용한 이동 로봇의 자율주행 알고리즘 개발)

  • Lee, Hyun-Dong;Myung, Byung-Soo
    • Journal of the Korean Institute of Intelligent Systems
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    • v.21 no.5
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    • pp.602-608
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    • 2011
  • In this study, a method of designing a neurointerface using neural network (NN) is proposed for controlling nonholonomic mobile robots. According to the concept of virtual master-slave robots, in particular, a partially stable inverse dynamic model of the master robot is acquired online through the NN by applying a feedback-error learning method, in which the feedback controller is assumed to be based on a PD compensator for such a nonholonomic robot. The NN for the online feedback-error learning can composed that the input layer consists of six units for the inputs $x_i$, i=1~6, the hidden layer consists of two hidden units for hidden outputs $o_j$, j=1~2, and the output layer consists of two units for the outputs ${\tau}_k$, k=1~2. A tracking control problem is demonstrated by some simulations for a nonholonomic mobile robot with two-independent driving wheels. The initial q value was set to [0, 5, ${\pi}$].

Develop physical layer analysis algorithm for OFDMA signal based IEEE 802.16e (IEEE 802.16e 기반 OFDMA 물리층 분석 알고리즘 연구)

  • Jang, Min-Ki
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.20 no.6
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    • pp.342-349
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    • 2019
  • We describe and anlayzes the methodology and implementation results of H / W configuration and signal characteristics analysis algorithm for analyzing equipment for analyzing OFDMA physical layer based on 802.16e. Recently, demand for signal analysis of instruments that analyze these signals with the development of digital communication signals is rapidly increasing. Accordingly, it is necessary to develop signal analysis equipment capable of analyzing characteristics of a broadband communication signal using a wideband digital signal processing module. In this paper, we have studied the basic theory of OFDMA in order to devise a device capable of analyzing characterisitcs of broadband communication signals. Second, the structure of OFDMA transmitter/receiver was examined. Third, a wideband digitizer was implemented. we design Wimax signal analysis algorithm based on OFDMA among broadband communication methods and propose Wimax physical layer analysis S/W implementation through I, Q signals. The IF downconverter used the receiver module and the LO generation module of the spectrum analyzer. Quantitative analysis result is obtained through the algorithm of Wimax signal analysis by I, Q data.

Development and Usability Test of Baby Vest Prototypes with a Body Temperature Sensing Function

  • Yi, Kyong-Hwa;Song, Hayoung
    • Journal of the Korean Society of Clothing and Textiles
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    • v.44 no.3
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    • pp.427-440
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    • 2020
  • This study developed a vest prototype capable of monitoring body temperature using textile electrodes to prevent the sudden death of babies as well as to determine the quality of developed products by evaluating usability with commercial products. Based on the results of the 7th Size Korea Project, a basic pattern for a vest prototype was drafted by applying the average size of two-year-old Korean babies. Two prototypes were the detachable (VEST I) and integrated textile electrodes vest type (VEST II), which followed the same design. The materials were 100% cotton single jersey (SJ) and double jersey (DJ). Six experts evaluated the usability of the developed vests (VEST I & VEST II) and commercial product (VEST M). The single-layer woven textile electrode appeared to have a slightly higher conductivity than the double-layer one. There was no statistical difference in the body temperature sensing function between VEST I and VEST II. Finally, the superiority of the VEST I was verified through a comparison with commercial products (VEST M). The usability test suggested that a wearable smart clothing system of the integrated conductive textile could be further commercialized for bio-monitor applications in Ubiquitous-health care.

Changes of the Level of G Protein ${\alpha}-subunit$ mRNA by Withdrawal from Morphine and Butorphanol

  • Oh, Sei-Kwan
    • The Korean Journal of Physiology and Pharmacology
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    • v.4 no.4
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    • pp.291-299
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    • 2000
  • Morphine or butorphanol was continuously infused into cerebroventricle (i.c.v.) with the rate of $26\;nmol/{\mu}l/h$ for 3 days, and the withdrawal from opioid was rendered 7 hrs after the stopping of infusion. The expression of physical dependence produced by these opioids was evaluated by measuring the naloxone-precipitated withdrawal signs. The withdrawal signs produced in animals dependent on butorphanol (kappa opioid receptor agonist) were similar to those of morphine (mu opioid receptor agonist). Besides the behavioral modifications, opioid withdrawal affected G protein expression in the central nervous system. The G-protein ${\alpha}-subunit$ has been implicated in opioid tolerance and withdrawal. The effects of continuous infusion of morphine or butorphanol on the modulation of G protein ${\alpha}-subunit$ mRNA were investigated by using in situ hybridization study. In situ hybridization showed that the levels of $G\;{\alpha}s$ and $G\;{\alpha}i$ were changed during opioid withdrawal. Specifically, the level of $G\;{\alpha}s$ mRNA was decreased in the cortex and cerebellar granule layer during the morphine and butorphanol withdrawal. The level of $G\;{\alpha}i$ mRNA was decreased in the dentate gyrus and cerebellar granule layer during the morphine withdrawal. However, the level of $G\;{\alpha}i$ mRNA was significantly elevated during the butorphanol withdrawal. These results suggest that region-specific changes of G protein ${\alpha}-subunit$ mRNA were involved in the withdrawal from morphine and butorphanol.

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