• Nuclear Engineering and Technology
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• v.9 no.1
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• pp.1-6
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• 1977

Monoiodobromosulfophthalein-$^{131}$ I (MIBSP-$^{131}$ I), one of the useful radiopharmaceuticals for liver function studies, has been prepared by a simple isotope exchange between the MIBSP and the molecular iodine-$^{131}$ I in phosphate buffer, pH 5.3. The pooled cold MIBSP was prepared by a normal iodination of BSP using iodine monochloride, and separated from the iodination mixture by applying a Sephadex LH-20 chromatography. At 10$0^{\circ}C$, the exchange rate was so fast that the reaction could be terminated in 5 min to show upto 95% yield. The final product could be obtained simply by further heating for about 5 min in a boiling water bath in the presence of a small amount of hydrogen peroxide, and subsequent pH adjustment and membrane filtration.

• Nuclear Engineering and Technology
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• v.41 no.5
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• pp.575-602
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• 2009

In the wake of the Three Mile Island accident, vigorous research efforts were initiated to acquire a basic knowledge of the progression and consequences of accidents that involve a substantial degree of core degradation and melting. The primary emphasis of this research was placed on containment integrity, with: i) hydrogen combustion-detonation, ii) steam explosion, iii) direct containment heating (DCH), and iv) melt attack on the BWR Mark-I containment shell identified as energetic processes that could lead to early containment failure (i.e., within the first 24 hours of the accident). Should the core melt fail the reactor vessel, then non-condensable gas production from Molten Core-Concrete Interaction (MCCI) was identified as a mechanism that could fail the containment by pressurization over the long term. One signification question that arose as part of this investigation was the effectiveness of water in terminating an MCCI by flooding the interacting masses from above, thereby quenching the molten core debris and rendering it permanently coolable. Successful quenching of the core melt would prevent basemat melt through, as well as continued containment pressurization by non-condensable gas production, and so the accident progression would be successfully terminated without release of radioactivity to the environment. Based on these potential merits, ex-vessel corium coolability has been the focus of extensive research over the last 20 years as a potential accident management strategy for current plants. In addition, outcomes from this research have impacted the accident management strategies for the Gen III+LWR plant designs that are currently being deployed around the world. This paper provides: i) an historical overview of corium coolability research, ii) summarizes the current status of research in this area, and iii) highlights trends in severe accident management strategies that have evolved based on the findings from this work.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.391-391
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• 2016

The carrier transport is a key factor that determines the device performances of semiconductor devices such as solar cells and transistors [1]. Particularly, devices composed of in amorphous semiconductors, the transport is often restricted by carrier trapping, associated with various defects. So far, the trapping has been studied for as-grown films at room temperature; however it has not been studied during growth under plasma processing. Here, we demonstrate the detection of trapped carriers in hydrogenated amorphous silicon (a-Si:H) films during plasma processing, and discuss the carrier trapping and defect kinetics. Using an optically pump-probe technique, we detected the trapped carriers (electrons) in an a-Si:H films during growth by a hydrogen diluted silane discharge [2]. A device-grade intrinsic a-Si:H film growing on a glass substrate was illuminated with pump and probe light. The pump induced the photocurrent, whereas the pulsed probe induced an increment in the photocurrent. The photocurrent and its increment were separately measured using a lock-in technique. Because the increment in the photocurrent originates from emission of trapped carriers, and therefore the trapped carrier density was determined from this increment under the assumption of carrier generation and recombination dynamics [2]. We found that the trapped carrier density in device grade intrinsic a-Si:H was the order of 1e17 to 1e18 cm-3. It was highly dependent on the growth conditions, particularly on the growth temperature. At 473K, the trapped carrier density was minimized. Interestingly, the detected trapped carriers were homogeneously distributed in the direction of film growth, and they were decreased once the film growth was terminated by turning off the discharge.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.221-221
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• 2013

Striving to replace the well known silicon nanocrystals embedded in oxides with solution-processable charge-trapping materials has been debated because of large scale and cost effective demands. Herein, a silicon quantum dot-polystyrene nanocomposite (SiQD-PS NC) was synthesized by postfunctionalization of hydrogen-terminated silicon quantum dots (H-SiQDs) with styrene using a thermally induced surface-initiated polymerization approach. The NC contains two miscible components: PS and SiQD@PS, which respectively are polystyrene and polystyrene chains-capped SiQDs. Spin-coated films of the nanocomposite on various substrate were thermally annealed at different temperatures and subsequently used to construct metal-insulator-semiconductor (MIS) devices and thin film field effect transistors (TFTs) having a structure p-$S^{++}$/$SiO_2$/NC/pentacene/Au source-drain. C-V curves obtained from the MIS devices exhibit a well-defined counterclockwise hysteresis with negative fat band shifts, which was stable over a wide range of curing temperature ($50{\sim}250^{\circ}C$. The positive charge trapping capability of the NC originates from the spherical potential well structure of the SiQD@PS component while the strong chemical bonding between SiQDs and polystyrene chains accounts for the thermal stability of the charge trapping property. The transfer curve of the transistor was controllably shifted to the negative direction by chaining applied gate voltage. Thereby, this newly synthesized and solution processable SiQD-PS nanocomposite is applicable as charge trapping materials for TFT based memory devices.

• Journal of the Korean Chemical Society
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• v.27 no.1
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• pp.58-65
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• 1983

The mechanical properties (tensile strength, 100% modulus and hardness) of the urethane elastomers prepared from hydroxyl terminated polybutadiene (HTPB), several low molecular weight diols (ethylene glycol, 1, 3-propane diol, 1,4-butane diol, 1,5-pentane diol and 1,6-hexane diol) and two kinds of diisocyanates(TDI: toluene diisocyanate, IPDI: isophorone diisomechanical properties were enhanced for the increases of the concentrations of the urethane group, as predicted. In case of TDI, when the mechanical properties of the elastomers were plotted patterns were observed, which can be explained by hydrogen bondings depending on the number of the methylene carbons. But the mechanical properties of the elastomers derived from IPDI had decreasing curves against the number of methylene carbons in low molecular weight diols, without the characteristic zigzag patterns.

• Applied Chemistry for Engineering
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• v.7 no.1
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• pp.59-66
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• 1996

Novel chitosan beads containing a series of bisamino-terminated polyethylene glycol (Bisamino-PEG, $Jeffamine^{(R)}ED$ series) have been prepared via capillary extrusion method using an alkaline solution. The results of swelling kinetics of chitosan beads showed that as the chain length of PEG in chitosan beads increased, the swelling process of the beads proceeded slowly. In order to study the releasing kinetics quantitatively, fluorescamine was coupled to the pendant amino groups and the releasing processes were followed by UV spectra. The results revealed that the releasing process was retarded in the order of $Jeffamine^{(R)}ED$-600 < $Jeffamine^{(R)}ED$-900 < $Jeffamine^{(R)}ED$-2001 as the chain length of PEG was increased. The slow release of PEG from the beads is considered to be governed by the chain length of PEG and interpolymeric hydrogen bonding between PEG and the chitosan molecule.

• Polymer(Korea)
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• v.38 no.2
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• pp.138-143
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• 2014

${\alpha},{\omega}$-Hydroxypropyl polydimethylsiloxane (HO-PDMS) was prepared by hydrosilylation of hydrogen terminated polydimethylsiloxane with allyl alcohol. Polydimethylsiloxane modified urethane with isocyanate group (PSU) was prepared from cyclic trimer of hexamethylenediisocyanate with HO-PDMS. PDMS modified urethane base resin with acrylic group (PSUA) was prepared from the urethane reaction of PSU with isocyanate group and 2-hydroxyethylmethacrylate. Their structures were characterized using FTIR and NMR. Coating materials were prepared by mixing PSUA, acrylic hardner, photo-initiator, and solvent and coated on PET film to obtain flexible and hard coating film by UV irradiation. Transparency of coating film was 89.7%, contact angle, $88^{\circ}$, and pencil hardness, 3H.

• Applied Chemistry for Engineering
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• v.22 no.1
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• pp.109-113
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• 2011

${\alpha},{\omega}$-Hydroxypropylpoly(dimethylsiloxane) was prepared from the reaction of a ${\alpha},{\omega}$-hydrogen polydimethylsiloxane with an allyl alcohol. MPE-g-poly(dimethylsiloxane) copolymer (MPES) was prepared from the graft copolymerization of MPE with ${\alpha},{\omega}$-hydroxypropyl group terminated PDMS. MPES/HDPE/EtO-CNT need to varify was prepared from the compounding of MPES, HDPE, and surface treated MWCNT with 4-ethoxybenzoic acid at $180^{\circ}C$. Melting point of the MPES/HDPE/EtO-CNT composite was decreased from 130 to $129^{\circ}C$ as increasing the content of MWCNT 10 to 20 wt% in the composite PTC characteristic of the MPES/HDPE/EtO-CNT composite was appeared at $120^{\circ}C$ as abruptly increasing the electrical resistivity at this temperature. The heighest PTC intensity of MPES/HDPE/EtO-CNT compsite at 10 wt% loading of EtO-CNT was 1.9.

• Journal of the Korean Vacuum Society
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• v.14 no.2
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• pp.78-83
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• 2005

Nanometric crystalline silicon (no-Si) embedded in dielectric medium has been paid attention as an efficient light emitting center for more than a decade. In nc-Si, excitonic electron-hole pairs are considered to attribute to radiative recombination. However the surface defects surrounding no-Si is one of non-radiative decay paths competing with the radiative band edge transition, ultimately which makes the emission efficiency of no-Si very poor. In order to passivate those defects - dangling bonds in the $Si:SiO_2$ interface, hydrogen is usually utilized. The luminescence yield from no-Si is dramatically enhanced by defect termination. However due to relatively high mobility of hydrogen in a matrix, hydrogen-terminated no-Si may no longer sustain the enhancement effect on subsequent thermal processes. Therefore instead of easily reversible hydrogen, phosphorus was introduced by ion implantation, expecting to have the same enhancement effect and to be more resistive against succeeding thermal treatments. Samples were Prepared by 400 keV Si implantation with doses of $1\times10^{17}\;Si/cm^2$ and by multi-energy Phosphorus implantation to make relatively uniform phosphorus concentration in the region where implanted Si ions are distributed. Crystalline silicon was precipitated by annealing at $1,100^{\circ}C$ for 2 hours in Ar environment and subsequent annealing were performed for an hour in Ar at a few temperature stages up to $1,000^{\circ}C$ to show improved thermal resistance. Experimental data such as enhancement effect of PL yield, decay time, peak shift for the phosphorus implanted nc-Si are shown, and the possible mechanisms are discussed as well.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.7-8
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• 2010

The surface conductive layer (SCL) of chemical vapor deposition (CVD) diamonds has attracting much interest. However, neither photoemission electron microscopic (PEEM) nor micro-spectroscopic (PEEMS) information is available so far. Since SCL retains in an ultra-high vacuum (UHV) condition, PEEM or PEEMS study will give an insight of SCL, which is the subject of the present study. The sample was made on a Ib-type HTHP diamond (001) substrate by non-doping CVD growthin a DC-plasma deposition chamber. The SCL properties of the sample in air were; a few tens K/Sq. in sheet resistance, ${\sim}180\;cm^2/vs$ in Hall mobility, ${\sim}2{\times}10^{12}/cm^2$ in carrier concentration. The root-square-mean surface roughness (Rq) of the sample was ~0.2nm as checked by AFM. A $2{\times}1$ LEED pattern and a sheet resistance of several hundreds K/Sq. in UHV were checked in a UHV chamber with an in-situ resist-meter [1]. The sample was then installed in a commercial PEEM/S apparatus (Omicron FOCUS IS-PEEM) which was composed of electro-static-lens optics together with an electron energy-analyzer. The presence of SCL was regularly monitored by measuring resistance between two electrodes (colloidal graphite) pasted on the two ends of sample surface. Figure 1 shows two PEEM images of a same area of the sample; a) is excited with a Hg-lamp and b) with a Xe-lamp. The maximum photon energy of the Hg-lamp is ~4.9 eV which is smaller that the band gap energy ($E_G=5.5\;eV$) of diamond and the maximum photon energy of the Xe-lamp is ~6.2 eV which is larger than $E_G$. The image that appear with the Hg-lamp can be due to photo-excitation to unoccupied states of the hydrogen-terminated negative electron affinity (NEA) diamond surface [2]. Secondary electron energy distribution of the white background of Figs.1a) and b) indeed shows that the whole surface is NEA except a large black dot on the upper center. However, Figs.1a) and 1b) show several features that are qualitatively different from each other. Some of the differences are the followings: the two main dark lines A and B in Fig.1b) are not at all obvious and the white lines B and C in Fig.1b) appear to be dark lines in Fig.1a). A PEEMS analysis of secondary electron energy distribution showed that all of the features A-D have negative electron affinity with marginal differences among them. These differences can be attributed to differences in the details of energy band bending underneath the surface present in SCL [3].