• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.54-54
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• 2010

This article reports a spontaneous method for controlling the growth mode from vertically arrayed ultra-slim MgZnO nanowires to nanowalls through the Zn random motion of seeds formed by surface phase separation by Mg injection near an evaporation temperature of Zn. The random motion of single crystal MgZnO seeds with relative Zn rich phase played a vital role in the growth of the MgZnO nanowalls. The seeds were networked with increasing Zn flux compared with Mg flux and closing to the evaporation temperature of Zn on phase separation layers. We achieved fabrication of MgZnO nanowalls on various non- and conducting substrates by this advanced growth method. The MgZnO nanowalls hydrogen sensor showed an improved sensing performance compared to the MgZnO nanowires grown under the similar conditions. Based on the microstructural characterizations, the growth procedure and models for the evolution of the structure transition from MgZnO nanowires to nanowalls on the Si substrates are proposed for phased growth times.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.33.1-33.1
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• 2018

pH is expressed mathematically as $pH=-{\log}[H^+]$, is a measure of the hydrogen ion concentration, [$H^+$] to specify the acidity or basicity of an aqueous solution. The pH scale usually ranges from 0 to 14. Every aqueous solution can be measured to determine its pH value. The pH values below 7.0 express the acidity, above 7.0 are alkalinity and pH 7.0 is a neutral solution. The solution pH can be determined by indicator or by measurement using pH sensor, which measuring the voltage generated between a glass electrode and a reference electrode according to the Nernst Equation. The pH value of solutions depends on the temperature and the activity of contained ions. In nickel electroless plating process, the controlled pH value in some limited ranges are extremely important to achieve optimal deposition rate, phosphorus content as well as solution stability. Basically, nickel electroless plating solution contains of $Ni^{2+}ions$, reducing agent, buffer and complexing agents. The plating processes are normally carried out at $82-92^{\circ}C$. However, the change of its pH values with temperatures does not follow any rule. Thus, the purpose of study is to understand the relationship between pH and temperature of some based solutions and electroless nickel plating solutions. The change of pH with changing temperatures is explained by view of the thermal dynamic and the practical measurements.

• Proceedings of the KIEE Conference
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• 2006.10a
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• pp.93-94
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• 2006

In this research, the enhancement of electron-transfer activity of hemoglobin (Hb) in dodecanoic acid film was investigated for the first time. This type of composite film was made on glassy carbon electrode by casting method. Cyclic voltammetric result of the modified electrode displays a well defined redox peaks which was attributed to the direct electrochemical response of Rb. Our results illustrate that Rb exchange electrons directly with electrode and exhibits the characteristics of peroxidase. When we apply this modified electrode as a biosensor, it gives excellent performances in the electrocatalytic reduction of hydrogen peroxide ($H_{2}O_{2}$). Through the optimal conditions, the proposed biosensor shows the linear range for H2O2 determination was from $1{\times}10^{-5}$ to $1.25{\times}10^{-4}mol/L$ with a detection limit of $1{\times}10^{-7}mol/L$. The biosensor retained more than 90% of the initial response after 14 days.

• Applied Chemistry for Engineering
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• v.30 no.6
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• pp.719-725
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• 2019

In this study, activated carbon fibers were treated with oxygen plasma to investigate gas sensing properties of the dimethyl methylphosphonate (DMMP), which is a simulant gas of the chemical warfare agent, according to oxygen functional group contents. As the flow rate of oxygen plasma treatment increased, oxygen groups were introduced to the surface of activated carbon fibers from 6.90 up to 36.6%, increasing the -OH group which influences the DMMP gas sensing properties. However, as the flow rate of oxygen plasma increases, the specific surface area tends to decrease because etching on the surface of activated carbon fibers occurs due to active species generated during the oxygen plasma treatment. The resistance change rate of the DMMP gas sensor increased from 4.2 up to 25.1% as the oxygen plasma treatment flow rate increased. This is attributed to the hydrogen bonding between DMMP gas and introduced hydroxyl functional group on activated carbon fibers by the oxygen plasma treatment. Therefore, the oxygen plasma is considered to be one of the important surface treatment methods for detecting chemical warfare agents at room temperature.

• Journal of Sensor Science and Technology
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• v.9 no.6
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• pp.430-439
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• 2000

$In_2O_3$-based thin film sensor with 500-600 nm thick was fabricated for the detection of CO gas by rf magnetron sputtering. In order to improve both sensitivity to CO gas and selectivity to hydrogen gas containing -CH, ultra-thin transition metal Co catalyst was sputtered over $In_2O_3$ thin film and annealed at $500^{\circ}C$. Sensitivity to CO was maximum at the thickness of Co 2.1 nm and $300^{\circ}C$, and that to $C_3H_8$ was at the thickness of Co 1.4 nm and $350-400^{\circ}C$. From the x-ray photoelectron spectroscopy (XPS) result, ultra-thin Co was existed into CoO covered with $Co_2O_3$ on $In_2O_3$ particles, and thus p-n junction of $In_2O_3(n-type)$-CoO(p-type) was thought to be formed. In this p-n junction type sensors, sensing mechanism with reducing gases can be explained by the variation of depletion layer thickness formed in the interface.

• Korean Chemical Engineering Research
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• v.48 no.2
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• pp.218-223
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• 2010

The zinc oxide thin film, which can be applied as the gas sensor of a semiconductor type, was grown on the silicon substrate by CFR(continuous flow reaction) method in this study. The growth property and the electrical property of the zinc oxide thin films synthesized by CFR method were also investigated. Zinc acetate solutions of 0.005~0.02 M were used as the precursor for the preparation of zinc oxide thin films. The size of ZnO particles consisted on the zinc oxide thin film increased not only with increasing concentration of precursor, but also the thickness of thin film increased. The growth rate of zinc oxide thin film by CFR method was proportionably depend on the concentration of precursor and the uniform ZnO thin film was prepared when zinc acetate of 0.01 M is used as the precursor. The charged currents on the zinc oxide thin films were obtained as its electrical property by I-V meter, and increased agree with increasing the thickness of zinc oxide thin film. Thus, it was concluded that the charged current on the zinc oxide thin film can be controlled with changing concentration of precursor solution in CFR method. The charged currents on the zinc oxide thin films also decreased when ZnO thin film is exposed under hydrogen sulfide of 500 ppmv at $300^{\circ}C$ for 5 min. From these results, it could be confirmed that the zinc oxide thin film prepared by CFR method can be used for the detection of sulfur compounds.

• Analytical Science and Technology
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• v.19 no.6
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• pp.482-489
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• 2006

Two electrode-based lactate biosensor was prepared by immobilizing lactate oxidase (LOD) obtained from pediococcus species in a poly(vinyl alcohol). Hydrogen peroxide ($H_2O_2$) produced by the reaction of lactate and LOD was detected on the Pt-black that was electrochemically deposited on the Au electrode. Sensors fabricated with Pt-black deposited Au electrode provided a high current of $H_2O_2$ oxidation at a substantially lowered applied potential (+300 mV vs. Ag/AgCl), resulting in reduced interferences from easily oxidizable species such as ascorbic acid, acetaminophen, and uric acid. An outer membrane is formulated by adjusting water uptake of hydrophilic polyurethane (HPU). The sensor performance was evaluated in vitro with both flow-through arrangement and static mode. The sensor showed a linear range from 0.1 mM to about 9.0 mM in 0.05 M phosphate buffer (pH 7.6) containing 0.05 M NaCl. Storing the sensors prepared in this work at $4^{\circ}C$ buffer solution while not in use, they provided same electrochemical performance for more than 25 days.

• Journal of Sensor Science and Technology
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• v.33 no.1
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• pp.40-47
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• 2024

The creation of vertically aligned one-dimensional (1D) nanostructures through the decoration of n-type tin oxide (SnO₂) on p-type chromium oxide (Cr₂O₃) constitutes an effective strategy for enhancing gas sensing performance. These heterostructures are deposited in multiple stages using a glancing angle deposition technique with an electron beam evaporator, resulting in a reduction in the surface porosity of the nanorods as SnO₂ is incorporated. In comparison to Cr₂O₃ films, the bare Cr₂O₃ nanorods exhibits a response 3.3 times greater to 50 ppm H₂S at 300℃, while the SnO₂-decorated Cr₂O₃ nanorods demonstrate an eleven-fold increase in response. Furthermore, when subjected to various gases (CH₄, H₂S, CO₂, H₂), a notable selectivity toward H₂S is observed. This study paves the way for the development of p-type semiconductor sensors with heightened selectivity and sensitivity towards H₂S, thus advancing the prospects of gas sensor technology.

• Journal of Sensor Science and Technology
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• v.6 no.1
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• pp.49-55
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• 1997

ZnO thin film had been deposited on the glass by sputtering method, and investigated by optical and electrical properties. When the rf power was 180W and sputtering pressure was $1{\times}10^{-3}$Torr at room temperature, thin lam deposited had strongly oriented c-axis and the lowest resistivity($1{\times}10^{-4}{\Omega}{\cdot}cm$), and then carrier concentration and Hall mobility were $6.27{\times}10^{20}cm^{-3}$ and $22.04cm^{2}/V{\cdot}s$, respectively. Transmittance of ZnO thin film in visible range was above 90%, and this thin film cut of the ultraviolet range below 320nm and the infrared range above 850nm. And after annealing in hydrogen atmosphere, the resistivity of ZnO thin film was somewhat decreased, while obtained as stable state.

• Journal of Sensor Science and Technology
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• v.9 no.2
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• pp.134-140
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• 2000

Si wafer direct bonding(SDB) technology is very attractive for both Si-on-insulator(SOI) electronic devices and MEMS applications. This paper presents on pre-bonding according to HF pre-treatment conditions in Si wafer direct bonding. The characteristics of bonded sample were measured under different bonding conditions of HF concentration and applied pressure. The bonding strength was evaluated by tensile strength method. A bond characteristic on the interface was analyzed by using FT-IR, and surface roughness according to HF concentration was analyzed by AFM. Si-F bonds on Si surface after HF pre-treatment are replaced by Si-OH during a DI water rinse. Consequently, hydrophobic wafer was bonded by hydrogen bonding of Si-OH$\cdots$(HOH$\cdots$HOH$\cdots$HOH)$\cdots$OH-Si. The pre-bonding strength depends on the HF pre-treatment condition before pre-bonding. (Min : $2.4kgf/cm^2{\sim}$Max : $14.9kgf/cm^2$)