• Transactions of the Korean hydrogen and new energy society
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• v.34 no.4
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• pp.350-357
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• 2023

In this study, the experimental investigation and theoretical analysis were conducted to verify the cooling capacity of the cryocooler used for pre-cooling of hydrogen gas. The effect of the flow rate on a copper pipe attached to the bottom of the cryocooler, which has a coil shape in a hydrogen line, was investigated. Temperature sensors were strategically placed at various positions on the cryocooler to analyze the temperature variations with respect to the flow rate. In this study, the thermal properties of hydrogen for the pressure and temperature were utilized using REFPROP to analyze the cooling capacity of the cryocooler. Based on the experimental results derived from this study, the cooling capacity of the cryocooler for pre-cooling hydrogen gas was considered by calculating the cooling temperature according to the flow rate through theoretical analysis.

• Journal of IKEEE
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• v.22 no.2
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• pp.356-361
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• 2018

We investigated a hydrogen gas sensor which is available in a high temperature atmosphere. The hydrogen sensors were fabricated into a metal-oxide-semiconductor (MOS) structure made of $Pd/Ta_2O_5/SiC$, and the thin tantalum oxide ($Ta_2O_5$) layer was fabricated by rapid thermal oxidation (RTO). In the experiment, we made three types of sensors with different palladium (Pd) patterns to evaluate the effect of Pd electrode on response characteristics. As the result, the response characteristics in capacitance were improved further when the filled area of the Pd electrode became larger.

• Journal of Sensor Science and Technology
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• v.5 no.4
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• pp.41-46
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• 1996

The Pd/Pt gate MISFET type hydrogen sensors, for detecting dissolved hydrogen gas in the transformer oil, were fabricated and their characteristics were investigated. These sensors including diffused resister heater and temperature monitoring diode were fabricated on the same chip by a conventional silicon process technique. The differential pair plays a role in minimizing the intrinsic voltage drift of the MISFET. To avoid the drift of the sensors induced by the hydrogen, the gate insulators of both FETs were constructed with double layers of silicon dioxide and silicon nitride. In order to eliminate the blister formation on the surface of the hydrogen sensing gate metal, Pt and Pd double metal layers were deposited on the gate insulator. The hydrogen response of the Pd/Pt gate MISFET suggests that the proposed sensor can detect the dissolved hydrogen in transformer oil with 40mV/10ppm of sensitivity and 0.14mV/day of stability.

• Korean Journal of Materials Research
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• v.20 no.12
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• pp.636-639
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• 2010

ZnO thin films were prepared on a glass substrate by radio frequency (RF) magnetron sputtering without intentional substrate heating and then surfaces of the ZnO films were irradiated with intense electrons in vacuum condition to investigate the effect of electron bombardment on crystallization, surface roughness, morphology and hydrogen gas sensitivity. In XRD pattern, as deposited ZnO films show a higher ZnO (002) peak intensity. However, the peak intensity for ZnO (002) is decreased with increase of electron bombarding energy. Atomic force microscope images show that surface morphology is also dependent on electron bombarding energy. The surface roughness increases due to intense electron bombardment as high as 2.7 nm. The observed optical transmittance means that the films irradiated with intense electron beams at 900 eV show lower transmittance than the others due to their rough surfaces. In addition, ZnO films irradiated by the electron beam at 900 eV show higher hydrogen gas sensitivity than the films that were electron beam irradiated at 450 eV. From XRD pattern and atomic force microscope observations, it is supposed that intense electron bombardment promotes a rough surface due to the intense bombardments and increased gas sensitivity of ZnO films for hydrogen gas. These results suggest that ZnO films irradiated with intense electron beams are promising for practical high performance hydrogen gas sensors.

• Journal of Sensor Science and Technology
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• v.23 no.5
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• pp.314-319
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• 2014

Here, we review the various methods for the preparation of vanadium dioxide ($VO_2$) films and nanowires, and their potential applications to the sensors such as gas sensor, strain sensor, and temperature sensor. $VO_2$ is an interesting material on account of its easily accessible and sharp Mott metal-insulator transition (MIT) at ${\sim}68^{\circ}C$ in the bulk. The MIT is also triggered by the electric field, stress, magnetic field etc. This paper involves exceptionally sensitive hydrogen sensors based on the catalytic process between hydrogen molecules and Pd nanoparticles on the $VO_2$ surface, and fast responsive sensors based on the self-heating effects which leads to the phase changes of the $VO_2$. These features will be seen in this paper and can enable strategies for the integration of a $VO_2$ material in advanced and complex functional units such as logic gates, memory, FETs for micro/nano-systems as well as the sensors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.3
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• pp.228-233
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• 2007

Core technologies for integrating hydrogen gas sensor were investigated. In this study, the thermally isolated micro-hot-plate with areas of $100{\times}100-260{\times}260{\mu}m^2$ was fabricated by utilizing surface micromachining technique that provides better manufacturing yield than bulk micromachining counterpart. The optimum design of the sensor was peformed by analyzing the thermal profile of the structure obtained from a ANSYS simulator. The 400-nm-thick polysilicon films doped with phosphorus, the 300-nm-thick aluminum films, and the 200-nm-thick $SnO_2$(or ZnO)films were used as the micro-heater material, the temperature sensor material, and the gas sensitive material, respectively. The experimental results show that the developed gas sensors can detect $H_2$ concentration as low as 1 ppm.

• Journal of Sensor Science and Technology
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• v.31 no.5
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• pp.348-352
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• 2022

Hydrogen gas (H₂) which is odorless, colorless is attracting attention as a renewable energy source in varions applications but its leakage can lead to disastrous disasters, such as inflammable, explosive, and narcotic disasters at high concentrations. Therefore, it is necessary to develop H₂ gas sensor with high performance. In this paper, we confirmed that H₂ gas detection ability of SnO₂ based H₂ gas sensor along with thermal treatment effect of SnO₂. Proposed SnO₂ based H₂ gas sensor is fabricated by MEMS technologies such as photolithgraphy, sputtering and lift-off process, etc. Deposited SnO₂ thin films are thermally treated in various thermal treatement temperature in range of 500-900 ℃ and their H₂ gas detection ability is estimatied by measuring output current of H₂ gas sensor. Based on experimental results, fabricated H₂ gas sensor with SnO₂ thin film which is thermally treated at 700 ℃ has a superior H₂ gas detection ability, and it can be expected to utilize at the practical applications.

• Journal of Auto-vehicle Safety Association
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• v.15 no.4
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• pp.58-64
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• 2023

The adoption of hydrogen-powered Elec is expanding globally. Hydrogen is recognized as a potentially hazardous energy source, and safety assessment is crucial for the development of plans to supply hydrogen-powered electric buses. Hydrogen gas leakage can have a significant impact during bus operations, and continuous hydrogen leakage in hydrogen-powered vehicles can result in fatal accidents. In this study, information about hydrogen leakage is collected through sensors installed within the vehicles and is measured when the sensor detects a leak. The study also proposes the use of Pseudo Fuel Leakage (PFL, %) as an additional indicator for evaluating and monitoring hydrogen safety and leakage.

• Journal of Sensor Science and Technology
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• v.15 no.2
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• pp.120-126
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• 2006

Physicochemical and electrical properties for hydrogen gas sensors based on Pd-deposited $WO_3$ thin films were investigated as a function of Pd thickness, annealing temperature, and operating temperature. $WO_3$ thin films were deposited on an insulating material by thermal evaporator. XRD, FE-SEM, AFM, and XPS were used to evaluate the crystal structure, microstructure, surface roughness, and chemical property, respectively. The deposited films were grown $WO_3$ polycrystalline with rhombohedral structure after annealing at $500^{\circ}C$. The addition effect of Pd is not the crystallinity but the suppression of grain growth of $WO_3$. Pd was scattered an isolated small spherical grain on $WO_3$ thin film after annealing at $500^{\circ}C$ and it was agglomerated as an irregular large grain or diffused into $WO_3$ after annealing at $600^{\circ}C$. 2 nm Pd-deposited $WO_3$ thin films operated at $250^{\circ}C$ showed good response and recovery property.

• Journal of the Korean Society for Heat Treatment
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• v.25 no.6
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• pp.279-282
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• 2012

$SnO_2$ thin films were prepared on the Si substrate by radio frequency (RF) magnetron sputtering and then surface of the films were irradiated with intense Ar ion beam to investigate the effect of Ar ion irradiation on the properties and hydrogen gas sensitivity of the films. From atomic force microscope observation, it is supposed that intense Ar bombardments promote rough surface and increase gas sensitivity of $SnO_2$ films for hydrogen gas. The films that Ar ion beam irradiated at 6 keV show the higher sensitivity than the films were irradiated at 3 keV and 9 keV. These results suggest that the $SnO_2$ thin films irradiated with optimized Ar ion beam are promising for practical high-performance hydrogen gas sensors.