• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Current Photovoltaic Research
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• v.1 no.1
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.16 no.11
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• pp.7773-7780
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• 2015

Analysis of existing kettle and its heating system has been the topic for localization technology development. Test pieces are made, polished and etched for existing kettle analysis. Surface of test pieces is observed using SEM, the kettle is verified to be made by deep drawing process from Ferrite-Perlite material. The kettle is also identified to be plated $16{\sim}49{\mu}m$ of thickness with Nickel(16%). Also heat transfer characteristics based on hot wire arrangement is investigated and optimal hot wire system is developed. Developed control system detects overheating and stops the whole system on the long operating time. Developed kettle takes the performance evaluation test for volume expansion and satisfied for standard 'KS G3602'.

• Korean Journal of Materials Research
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• v.21 no.12
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• pp.666-672
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• 2011

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

• 한국신재생에너지학회:학술대회논문집
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• 2005.11a
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 1999.08a
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• pp.119-125
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• 1999

At Wire Rod Mill Plant, wire is made of the billet produced at continuous casting machine, or rolled bloom produced at billeting mill, and the product can be classified of wire of 5.5${\Phi}$ and bar in coil of 14∼42${\Phi}$ in diameter(bar in coil will be referred to as coil as below). At present, wire is produced at POSCO No.1, 2, 3 WRM, coil at garret line of No. 2 WRM. Head and tail of coil are properly cut and treated to scrap to fulfill the customer's satisfaction. This above cutting is done off line, and small size coil can be cut manually with clipper, large size coil with hydraulic cutter. Nowadays, it is being investigated to cut automatically in line with trimming shear after passing mill stand. At the moment, Because the coil produced at the garret line of No.2 WRM is hot 400∼600$^{\circ}C$ and trimming is done manually with cutter, there are always interference from manual operation or safety problem of bad working condition. Not only because of the diversity of the coil size 14∼42${\Phi}$ in diameter, but because of the rolling speed 2.5∼22m/sec, it is required to be equipped with several trimming shear. But this can be accomplished with only one shear installed proper place at this paper.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.13 no.1
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• pp.8-13
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• 2012

Ti-3Al-2.5V ingot was produced, processed into a titanium alloy wire of 9mm diameter, and the characteristics were studied in comparison with imported material. The ingot satisfied ASTM Grade 9 standard showing oxygen content of 0.11wt% and iron content of 0.085wt%. The hardness of the 9mm diameter titanium alloy was similar to that of the imported material showing values between 225 and 250Hv, and the tensile strength of the imported material was 804MPa while that of the domestic development was 734MPa. The elongation of the imported material was 12% while that of the domestic development was 22%. A new process of manufacturing 9.0mm diameter titanium alloy wire through forging and multi-step hot rolling process out of 400mm diameter ingot was developed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.6
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• pp.614-618
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• 2024

MBB (multi-busbar) technology is a module technology to achieve high power, and the use of a number of thin circular metal wires increases light-receiving capacity and reduces resistance. In the process of interconnection using a wire, the stress of the cell increases depending on the degree of coupling between the wire and the cell and the degree of damage caused by heat, or the mobility of current decreases due to poor bonding. The degree of such loss is affected by IR lamp, hot plate temperature and wire thickness. In addition, the values of contact resistance were compared and analyzed to analyze the cause of the decrease in electrical characteristics. In this study, process condition optimization was carried out through peeling test, SEM analysis, EL test, and pre/post bonding efficiency characteristic analysis of the bonded cell according to process conditions, compared the contact resistance.

• Transactions of the Korean Society of Mechanical Engineers
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• v.10 no.4
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• pp.541-557
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• 1986

본 연구에서는 캐패시턴스 성분을 고려한 브리지(bridge) 모델을 적용하여 지 금까지 설명할 수 없었던 문제를 설명함으로서 이 모델의 정당성을 확인하고자 하며, 더욱 나아가 다른 여러가지 변수에 대한 응답특성의 예측을 가능하게 하고자 한다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2012.10a
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• pp.825-826
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• 2012