• Journal of Information Display
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• v.12 no.4
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• pp.223-227
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• 2011

Electrophosphorescent devices with ionomer-type hole transport layers were investigated. On top of the 3,4-ethylenedioxy thiophene:poly(4-styrene sulfonate) [PEDOT:PSS] structures, fluoropolymer interfacial layers (FPIs) with different side chain lengths were introduced. Both for the PEDOT:PSS/FPI (layered) and PEDOT:PSS (mixed) structures with soluble phosphorescent emitters, the short-side-chain FPIs showed higher efficiency. The difference in the electrical properties of the two FPIs for bipolar (light-emitting) devices was not clear, but the hole-only device clearly showed the favored hole injection at the PEDOT:PSS/FPI structure with a shorter side chain, a copolymer of tetrafluoroethylene and sulfonyl fluoride vinyl ether.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.46-47
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• 2008

Organic light-emitting diode is quick response speed, low power consumption and the self-interest has many advantages, such as insanity. So, organic light-emitting diode mechanism of light-emitting diode in order to more clearly understand the changes in the thickness of emitting materials for OLED characteristics of the simulation. emitting layer to a thickness of 10 [nm] ~ 100 [nm] changed the experiment, and hole transport layer 190 [nm] as a fixed. and emitting layer 10 [nm] ~ 100 [nm] to change the simulation results. Changes in the thickness of emitting layer gradually increased. depending on the emitting was 20 [nm] in the high 441 [lm / W] shows. and was gradually reduced. emitting layer 190 [nm] when fixed, hole transport layer, depending on changes in the thickness of 70 [nm] in the efficiency maximum value of 477 [lm / W], and was gradually reduced.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.497-500
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• 2001

Due to their better photosensitivity in X-ray, the amorphous selenium based photoreceptor is widely used on the X-ray conversion materials. It was possible to control the charge carrier transport of amorphous selenium by suitably alloying a-Se with other elements(e,g. As, Cl). The charge transport properties of amorphous Selenium is decided on hole which is induced from metal to selenium in metal-selenium junction and which is transferred in a-Se bulk. This phenomenon is resulted of changing electric field owing to increasing of space charge by deep trap of a-Se bulk. In this paper, We dopped the chlorine to compensate deep hole trap and deposited blocking layer using dielectric material to prevent from increasing space charge for injection charge between metal electrode and a-Se layer. We compared space charge and the decreasing of trap density through measuring dark and photo current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.12
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• pp.899-903
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• 2013

We investigated the luminescence properties of $Alq_3$ in the device structure of ITO/CuPc/TPD/$Alq_3$/Al. The CuPc as a hole-injection material and TPD as hole-transport material. Emission properties were measured by varying a layer thickness of CuPc (0 nm to 50 nm), which is the hole-injection layer. As a result, it was found that the hole injection occurs smoothly when the layer thickness was 20 nm among the thicknesses from 0 nm to 50 nm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.18 no.12
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• pp.1139-1142
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• 2005

Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The IP and EA were 6.5 eV and 3.0 eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 450 nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emiting material layer(EML) and cathode, and between hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.447-448
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• 2005

Recently, organic light emitting diodes(OLEDs) is widely used as one of the information display techniques. We synthesized 2-(2-hydroxyphenyl)benzoxazole($Zn(HPB)_2$). We studied the luminescent properties of OLEDs using $Zn(HPB)_2$. The ionization potential(IP) and the electron affinity(EA) of $Zn(HPB)_2$ investigated using cyclic-voltammetry(C-V). The JP, EA and Eg were 6.5eV, 3.0eV and 3.5eV, respectively. The PL and EL spectra of $Zn(HPB)_2$ were observed at the wavelength of 4S0nm. We used $Zn(HPB)_2$ as an emitting layer and hole blocking layer. At the experiment about hole blocking effect, we inserted $Zn(HPB)_2$ between emitting material layer(EML) and cathode, and hole transport layer(HTL) and emitting material layer(EML). We measured current density-voltage and luminance-voltage characteristics at room temperature.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.885-886
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• 2003

A bilayer is used as an anode electrode for organic electroluminescent devices. The bilayer consist of an ultrathjn ZnO layer adjacent to an hole-transporting layer and an Indium tin oxide(ITO) outerlayer. We tried to bring low the barrier between the devices as deposited ZnO films on ITO substrates. We fabricated the organic EL structure consisted of Al as cathode, $Al_{2}O_{3}$ as electro transport layer, Alq3 as luminously layer, triphenyl diamine(TPD) as hole transport layer and ZnO(l nm )/ITO(l50 nm) as anode. The result of this experiment was not good compared with the case of using ITO, Nevertheless, at this structure we obtained the lowest turn-on voltage as the value of 19 V and the good brightness (6200 $cd/m^{2}$) of the emission light from the devices. Then the quantum efficiency was to be 1.0%.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.321-321
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• 2010

The PEDOT:PSS layer is usually used as hole transporting layer for the polymer bulk heterojunction solar cells. However, the interface between ITO and PEDOT:PSS is not stable and the chemical reaction between ITO and PEDOT can result in degraded device performance. We used the tungsten oxides as a hole transport layer by spin-coating. The $WO_3$ nanoparticles were well dispersed in ammonium hydroxide and deionized water and formed thin layer on the ITO anode. We found that $WO_3$ surface is more hydrophobic than the bare ITO or PEDOT:PSS-coated surfaces. The hydrophobic surfaces promote an ordered growth of P3HT films. A higher degree of P3HT ordering is expected to improve the hole mobility and the lifetime of the device using the tungsten oxide showed better stability compared to the device using the PEDOT:PSS.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.1
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• pp.74-80
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• 2009

In the structure of ITO/N,N'-diphenyl-N,N' bis (3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD)/tris (8-hydroxyquinoline)aluminum($Alq_3$)/Al device, we studied the efficiency improvement of organic light-emitting diodes due to variation of deposition rate of hole transport layer (TPD) materials using hole-size of crucible boat. The thickness of TPD and $Alq_3$ was manufactured 40 nm, 60 nm, respectively under a base pressure of $5{\times}10^{-6}$ Torr using a thermal evaporation. The $Alq_3$ used for an electron-transport and emissive layer were evaporated to be at a deposition rate of $2.5\;{\AA}/s$. When the deposition rate of TPD increased from 1.5 to $3.0\;{\AA}/s$, we studied the efficiency improvement of TPD using the hole-size of crucible is 1.0 mm. When the deposition rate of TPD is $2.5\;{\AA}/s$, we found that the average roughness is rather smoother, the luminous efficiency the external quantum efficiency is superior to the others. Compared to the two from the devices made with the deposition rate of TPD is $2.0\;{\AA}/s$ and $3.0\;{\AA}/s$, the external quantum efficiency was improved by four-times and two-times, respectively.

• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.363-367
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• 2015

This paper reports on thermally adjusted graphene oxide (GO) as the hole transport layer (HTL) for organic light-emitting diodes (OLEDs). GO is generally not suitable for HTL of OLEDs because of intrinsic specific resistance. In this paper, the specific resistance of GO is adjusted by the thermal annealing process. The optimum specific resistance of HTL is found to be $10^2{\Omega}{\cdot}m$, and is defined by the maximum current efficiency of OLEDs, 2 cd/A. In addition, the reasons for specific resistance change are identified by x-ray photoelectron spectroscopy (XPS). First, the XPS results show that several functional groups of GO were detached by thermal energy, and the amount of epoxide changed substantially following the temperature. Second, the full width at half maximum (FWHM) of the C-C bond decreased during the process. That means the crystallinity of the graphene improved, which is the scientific basis for the change in specific resistance.