• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.11a
• /
• pp.171-171
• /
• 2009

We have investigated dielectric properties depending on temperature and voltage in organic light-emitting diodes using N,N'-diphenyl-N,N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-di-amine (TPD) as an hole transport. We analyzed the Cole-Cole plot of TPD. When the voltage is over 3 V, we found that a radius of Cole-Cole plot and $\beta$ increase as the temperature increases to 65 $^{\circ}C$, However, as the over the 65 $^{\circ}C$, those values decrease. Also, when the voltage is below 3 V, a radius of cole-cole plot and $\beta$ increase with the increased temperature.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.280.2-280.2
• /
• 2016

The graphene, a single atomic sheet of graphite, has attracted tremendous interest owing to its novel properties including high intrinsic mobility, optical transparency and flexibility. However, for more diverse application of graphene devices, it is essential to tune its transport behavior by shifting Dirac Point (DP) of graphene. So, in the following context, we suggest a method to tune structural and electronic properties of graphene using atomic layer deposition. By atomic layer deposition of zinc oxide (ZnO) on graphene using 4-mercaptophenol as linker, we can fabricate n-doped graphene. Through ${\pi}-{\pi}$ stacking between chemically inert graphene and 4-mercaptophenol, conformal deposition of ZnO on graphene was enabled. The electron mobility of graphene TFT increased more than 3 times without considerably decreasing the hole mobility, compared to the pristine graphene. Also, it has high air stability. This ZnO doping method by atomic layer deposition can be applicable to large scale array of CVD graphene TFT.

• Journal of The Korean Astronomical Society
• /
• v.37 no.5
• /
• pp.501-507
• /
• 2004

The uniquely large dimensions of Giant radio galaxies (GRGs) make it possible to probe for stringent limits on total energy content, Faraday rotation, Alfven speeds, particle transport and radiation loss times. All of these quantities are more stringently limited or specified for GRG's than in more 'normal' FRII radio sources. I discuss how both global and detailed analyses of GRG's lead to constraints on the CR electron acceleration mechanisms in GRG's and by extension in all FRII radio sources. The properties of GRG's appear to rule out large scale Fermi-type shock acceleration. The plasma parameters in these systems set up conditions that are favorable for magnetic reconnection, or some other very efficient process of conversion of magnetic to particle energy. We conclude that whatever mechanism operates in GRG's is probably the primary extragalactic CR acceleration mechanism in the Universe.

• Journal of the Korean Society for Precision Engineering
• /
• v.23 no.3 s.180
• /
• pp.132-138
• /
• 2006

With a great requirement of innovation caused by severe competition current companies are encouraged to improve bottleneck areas in production procedure. Specially a chassis line in which assembly processes are mainly carried out manually has the large potential to be automated. The putting of spare tire in trunk in chassis line is still dominated by free dropping method. Through that, parts in trunk such as luggage room lamp, jack and so on were damaged and the complaint of assembler in the next process was occurred due to physical strength. To eliminate these, tile robot system was in this paper developed to place spare tire on the mounting hole in trunk. The movement of robot was synchronized with the velocity of chassis hanger. With this automated system the productivity of the chassis line was increased from the benefits such as simplification of the system using only robot without the mechanically synchronized transport, inserting spare tire into the right position with robot, reduction of damaged parts and production of various type of car.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1403-1406
• /
• 2007

An effective WOLED structure was demonstrated which improved a luminous efficiency and white color chromaticity independent on applied bias by employing effective carrier transporting layer, without any alteration of emissive materials. The modified WOLEDs exhibited 2 times higher luminous efficiency than the control device and showed balanced white emission during an operation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.299-302
• /
• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays. They are attractive because of multicolor emission low operation voltage. In this study, several Eu complexes such as Eu(TPB)$_3$(Phen) and Eu(TPB)$_3$(Bpy) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of glass substrate/ITO/TPD/Europium-complexs/Alq$_3$/Al, where aromatic diamine(TPD) was used as an hole transporting and Alq$_3$ was used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these Europium complexes were dependent upon the ligands coordinated to Europium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.1026-1029
• /
• 2002

We report the electric properties of organic light emitting diodes (OLEDs) by controlling the carrier density according to the crystalline of copper(II) phthalocyanine(CuPc) and the irradiation light intensity. OLEDs were constructed with indium tin oxaide (ITO)/CuPc/triphenyl-diamin (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq3)/Al. The transport properties of OLEDs were changedby the heat-treatments of CuPc. The irradiation of red and blue light exciting CuPc, TPD and Alq3. And then we observed the carrier density of OLEDs.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.972-975
• /
• 2002

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their application as display. One of the problems is red material. It offered a short life and poor emission efficiency to boot. In this study, this problem can be solved by using a multi-layer device structure. Organic electroluminescent devices which are composed of organic thin multi-layer films are fabricated. The basic structure is ITO / Emitting layer / LiP / Al EL device in which Hole transport/Electron blocking PVK layer was blending. We demonstrate the enhancement of eletroluminescence (EL) from blends of poly(3-hexylthiophene) in poly(N-vinylcarvazole). The emitting layer is consisted of a host material(PVK) and a guest emitting material(P3HT). It was showed higher EL intensity and their electro-optical properties were investigated.

• Proceedings of the KIEE Conference
• /
• 1998.11c
• /
• pp.792-794
• /
• 1998

The TPD and the $Alq_3$ film are widely used as a hole transport layer and an emitter layer respectively, in organic electroluminescent(EL) device (ITO Glass/TPD/$Alq_3$/metal). In this structure, we fabricated two models. Model(1) having ITO glass/$Alq_3$/Al structure and model(2) having ITO Glass/TPD/$Alq_3$/Al structure were fabricated by the vacuum evaporation. The comparison between model(1) and model(2) was made about the absorbance, the wave length, the current-voltage characteristic and the ln I - $V^{(1/2)}$characteristic respectively. Electroluminescence of green and wavelength of 510[nm] were observed in both model. We observed absorbance from 320[nm] to 430[nm] in $Alq_3$ material and from 250[nm] to 400[nm] in TPD material.

• Journal of Korean Vacuum Science & Technology
• /
• v.6 no.1
• /
• pp.43-45
• /
• 2002

We have theoretically investigated steady-state carrier transport and current self-oscillation in negative-effective-mass (NEM) p$\^$+/pp$\^$+/diodes. The current self-oscillation here is a result of the formation and traveling of electric field domains in the p base having a NEM. The dependence of self-oscillating frequency on the applied dc voltage is obtained by detailed numerical simulations. In the calculations, we have considered the scatterings by carrier-impurity, carrier-acoustic phonon, carrier-polar-phonon, and carrier-nonpolar-phonon-hole interactions . This kind of NEM oscillator allows us to reach a current oscillation with terahertz frequency, thus it may be used as a broadband source of terahertz radiation.