• Applied Microscopy
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• v.45 no.2
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• pp.89-94
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• 2015

This article briefly reviews the results of recently reported research on high-temperature Pb-free solder alloys and the research trend for characterization of the interfacial reaction layer. To improve the product reliability of high-temperature Pb-free solder alloys, thorough research is necessary not only to enhance the alloy properties but also to characterize and understand the interfacial reaction occurring during and after the bonding process. Transmission electron microscopy analysis is expected to play an important role in the development of high-temperature solders by providing accurate and reliable data with a high spatial resolution and facilitating understanding of the interfacial reaction at the solder joint.

• Korean Journal of Materials Research
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• v.13 no.7
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• pp.478-483
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• 2003

The crystallographic characteristics of the $(Bi, La)_4$$Ti_3$$O_{12}$ thin film, which is considered as an applicable dielectrics in the ferroelectric RAM device due to a low crystallization temperature and a good fatigue property, were investigated at the atomic scale by high resolution transmission electron microscopy and the high resolution Z-contrast technique. The analysis showed that a (00c) preferred orientation and a crystallization of the film were enhanced with the diffraction intensity increase of the (006) and (008) plane as the annealing temperature increased. It indicated a change of the atomic arrangement in the (00c) plane. Stacking faults on the (00c) plane were also observed. Through the comparison of the high-resolution Z-contrast image and the $Bi_4$$Ti_3$$O_{12}$ atomic model, it was evaluated that the intensity of the Bi atom was different according to the atomic plane, and it was attributed to a substitution of La atom for Bi at the specific atom position.

• Korean Journal of Materials Research
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• v.22 no.8
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• pp.421-425
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• 2012

Two types of Pt nanoparticle electrocatalysts were composited on Pt nanowires by a combination of an electrospinning method and an impregnation method with NaBH4 as a reducing agent. The structural properties and electrocatalytic activities for methanol electro-oxidation in direct methanol fuel cells were investigated by means of scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), and cyclic voltammetry. In particular, SEM, HRTEM, XRD, and XPS results indicate that the metallic Pt nanoparticles with polycrystalline property are uniformly decorated on the electro-spun Pt nanowires. In order to investigate the catalytic activity of the Pt nanoparticles decorated on the electro-spun Pt nanowires, two types of 20 wt% Pt nanoparticles and 40 wt% Pt nanoparticles decorated on the electro-spun Pt nanowires were fabricated. In addition, for comparison, single Pt nanowires were fabricated via an electrospinning method without an impregnation method. As a result, the cyclic voltammetry and chronoamperometry results demonstrate that the electrode containing 40 wt% Pt nanoparticles exhibits the best catalytic activity for methanol electro-oxidation and the highest electrochemical stability among the single Pt nanowires, the 20 wt% Pt nanoparticles decorated with Pt nanowires, and the 40 wt% Pt nanoparticles decorated with Pt nanowires studied for use in direct methanol fuel cells.

• Transactions of Materials Processing
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• v.33 no.2
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• pp.118-122
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• 2024

Micro-electromechanical systems (MEMS) based in-situ heating holders have been developed to enable high resolution imaging of heat treatment analysis. However, unlike the standard 3 mm metal disk specimens used in the furnace-based heating holder and general transmission electron microscopy holder, the MEMS-based in-situ heating holder requires thin specimens that can be penetrated by electrons to be transferred onto the MEMS chip. Previously, focused ion beam milling was used to transfer metal specimens, but it has the disadvantage of being expensive and the risk of specimen damage due to gallium ions. Therefore, in this study, we devised a method of transferring metallic materials by ultrasonic treatment using a transmission electron microscopy specimen made by electro jet polishing. A 3mm electropolished metal disk was placed in an appropriate solution, ultrasonicated, and then drop casted. The transfer of the specimen was successful, but it was confirmed that dislocations were formed inside the specimen due to ultrasonic treatment. This study provides a novel method for transferring metallic materials onto MEMS chips, which is cost-effective and less gallium ion damaging to the specimen. The results of this study can be used to improve the efficiency of heat treatment analysis using MEMS-based in-situ heating holders.

• Korean Journal of Materials Research
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• v.15 no.10
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• pp.626-631
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• 2005

GaN-related compound semiconductors were grown on the corrugated interface substrate using a metalorganic chemical vapor deposition system to increase the optical power of white LEDs. The patterning of substrate for enhancing the extraction efficiency was processed using an inductively coupled plasma reactive ion etching system and the surface morphology of the etched sapphire wafer and that of the non-etched surface were investigated using an atomic force microscope. The structural and optical properties of GaN grown on the corrugated interface substrate were characterized by a high-resolution x-ray diffraction, transmission electron microscopy, atomic force microscope and photoluminescence. The roughness of the etched sapphire wafer was higher than that of the non-etched one. The surface of III-nitride films grown on the hemispherically patterned wafer showed the nano-sized pin-holes that were not grown partially. In this case, the leakage current of the LED chip at the reverse bias was abruptly increased. The reason is that the hemispherically patterned region doesn't have (0001) plane that is favor for GaN growth. The lateral growth of the GaN layer grown on (0001) plane located in between the patterns was enhanced by raising the growth temperature ana lowering the reactor pressure resulting in the smooth surface over the patterned region. The crystal quality of GaN on the patterned substrate was also similar with that of GaN on the conventional substrate and no defect was detected in the interface. The optical power of the LED on the patterned substrate was $14\%$ higher than that on the conventional substrate due to the increased extraction efficiency.