• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.72-75
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• 1996

A hydride vapor phase epitaxy (HVPE) method is performed to prepare the GaN thin films on c-plane sapphire substrate. The full-width at half maximum of double crystal X-ray rocking curves from 20$\mu\textrm{m}$-thick GaN was 576 arcsecond. The photoluminescence spectrum measured 10 K shows the hallow bound exciton (I$_2$) line and weak donor-acceptor peak, however, there was not observed deep donor-acceptor pair recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality. The GaN layer is n-type conducting with electron mobility of 72 $\textrm{cm}^2$/V$.$sec and with carrier concentration of 6 x 10$\^$18/cm/sup-3/.

• Applied Science and Convergence Technology
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• 제25권1호
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• pp.1-6
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• 2016

Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

• Journal of Biosystems Engineering
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• 제28권4호
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• pp.325-334
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• 2003

Pinosylvin, a stilbenoid phytoalexin, is a health ingredient to be extracted from pine leaves. In this study, ultrasonication-assisted extraction process for manufacturing extracts with high content of pinosylvin from pine leaves was investigated. As process and system variables, ultrasonic power, sonication time and solvent ratio were selected. According to the experimental results, the effective yield of pinosylvin increased with the increase of ultrasonic power and sonication time and the decrease of solvent ratio. When the ultrasonic power of 2400 W/L was added to the solution of pulverized pine leaves of 8 g per 1 L of a solvent for 10 minutes, yield of extracts and purity, effective yield and concentration ratio of pinosylvin were 0.3166 g/g, 0.7247 mg/g, 0.2294 mg/g and 23.0, respectively.

• 센서학회지
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• 제20권1호
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• pp.30-34
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• 2011

Single crystal of KCl doped with $Eu^{2+}$ ions was grown by the Czochralski method in the high pressure Ar gas(purity 99.999 %) atmosphere with chamber pressure from which the crystal with high quality was obtained. As grown $KCl:Eu^{2+}$ crystal was checked by X-ray diffraction. Luminescence properties of KCl:Eu are investigated by laser-excitation spectroscopy under 355 nm excitation at 14 and 295 K. The broad emission band due to the $Eu^{2+}$ 5d $\rightarrow$ 4f transition is peaked at 417 nm with full width at half maximum of about 20 and 30 nm.

• 한국주조공학회지
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• 제13권6호
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• pp.540-546
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• 1993

The effects of fluid flow on the purification of aluminum were studied. As the revolution rate(N) increased, the size of columnar grain decreased gradually. The concentration of solidified crystal was decreased with increasing distance from chill and revolution rate(N). Distribution boundary layer thickness(${\delta}$) was calculated from the solute distribution obtained in solid experimentally and by use of BPS equation. The value of ${\delta}$ changed from about $60{\mu}m$ at N value of 27rpm to about $15{\mu}m$ at N value of 1000rpm. From this result, high purification was obtained by decreasing the diffusion boundary layer under forced convection.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 추계학술대회 논문집
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• pp.37-39
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• 1996

A hydride vapor phase epitaxy (HVPE) method was performed to prepare the GaN thick-films on c-plane sapphire substrates. The full-width at half maximum of double crystal X-ray rocking curve from 350${\mu}{\textrm}{m}$ thick GaN was 576 arcsecond. The photo- luminescence spectrum measured (at room temperature) show the narrow bound exciton(I$_2$) line and weak donor-acceptor pair recombination peak, however, there was not observed deep donor-acceptor pare recombination indicate the GaN crystals prepared in this study are of high purity and high crystalline quality.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 제5회 영호남 학술대회 논문집
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• pp.76-80
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• 2003

Recently as new digital media like High Definition Television (HDTV) have been made popularization. However In case of image quality characteristics of AC PDP, the problem especially raised is 'image sticking' phenomenon, the phenomenon that the previously displayed pattern still remains after the image in realizing high picture quality. In this paper, Image sticking Phenomena observed in AC PDP are defined and classified, these effects are analyzed as luminance, color purity through chromaticity diagram and firing voltage state using light waveform.

• 한국세라믹학회지
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• 제32권12호
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• pp.1417-1423
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• 1995

α/β sialon based composites containing silicon nitride whisker and silicon carbide platelet were fabricated by hot pressing. Effect of the reinforcing agents on the α to β phase transformation of the sialon as well as on the mechanical properties was investigated. Silicon nitride whisker and silicon carbide platelet promoted the phse transformation. TEM/EDS analysis revealed that the grain containing the whisker had 'core-rim' structure; core being high purity Si3N4 whisker and rim being β-sialon. Flexural strength of the composite decreased with the reinforcement addition which, on the other hand, improved fracture toughness of it. High temperature strength was measured at 1300℃ to be about 130 MPa lower than that measured at RT for the whisker reinforced composites.

• 한국표면공학회지
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• 제24권4호
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• pp.196-205
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• 1991

Multi-level thin films are very important in ULSI applications because of their high electromigration resistance. This study presents the effects of titanium, titanium nitride and titanium tungsten underlayers of the stability of multi-aluminum thin films during isothermal annealing. High purity Al(99.999%) films have been electron-beam evaporated on Ti, TiN, TiW films formed on SiO2/Si (P-type(100))-wafer substrates by RF-sputtering in Ar gas ambient. The hillock growth was increased with annealing temperatures. Growth of hillocks was observed during isothermal annealing of the thin films by scanning electron microscopy. The hillock growth was believed to appear due to the recrystallization process driven by stress relaxation during isothermal annealing. Thermomigration damage was also presented in thin films by grain boundary grooving processes. It is shown that underlayers of Al/TiN/SiO2, Al/TiW/SiO2 thin films are preferrable to Al/SiO2 thin film metallization.

• 한국세라믹학회지
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• 제31권1호
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• pp.55-61
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• 1994

Mn-Zn ferrite powder was obtained by wet method that was to be coprecipitated the metal ions of Fe2+, Mn2+ and Zn2+ with alkali solution. The target composition of the ferrite powder was 52 mol% Fe2O3, 24 mol% MnO, and 24 mol% ZnO, that was based on the region of high permeability. And the other ferrite powder was prepared by the dry method that was to be mixed the metal oxides as the above chemical composition. The wet method was compared with dry method for the powder properties and the electromagnetic characteristics of sintered cores. The synthesized powder by wet method was smaller particle size, narrower particle distribution, and higher purity than that of dry method. The initial permeability of sintered sample prepared by the wet method was 14000~28000, on the other side, 9000~15500 in case of the dry method.