• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2017.10a
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• pp.238-240
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• 2017

Balun using a coaxial lines i often used in microwave circuits due to easy fabrication, high operating power, and stable operation. However, it is difficult to predict an accurate balun operation characteristic due to the parasitic reactance component to be generated when the coaxial line is connected to the microstrip line existing on the substrate, and the inductance and the capacitance component of the coaxial line itself. In this paper, it is measured the phase characteristics at two output ports of the coaxial line balun which should have opposite phase characteristics. Based on these results, it will examine closely the feasibility of making more improved coaxial line balun.

• Journal of the Korean Vacuum Society
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• v.9 no.1
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• pp.7-15
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• 2000

An ECR-PECVD system with the characteristics of high ionization rat다 ability of plasma processing in a wide pressure range and deposition at low temperature was manufactured and characterized for the deposition of thin films. The system consists of a vacuum chamber, sample stage, vacuum gauge, vacuum pump, gas injection part, vacuum sealing valve, ECR source and a control part. The control of system is carried out by the microprocessor and the ROM program. We have investigated the vacuum characteristics of ECR-PECVD system, and also have diagnosed the characteristics of ECR microwave plasma by using the Langmuir probe. From the data of system and plasma characterization, we could confirmed the stability of pressure in the vacuum chamber according to the variation of gas flow rate and the effect of ion bombardment by the negative DC self bias voltage. The plasma density was increased with the increase of gas flow rate and ECR power. On the other hand, it was decreased with the increase of horizontal radius and distance between ECR source and probe. The calculated plasma densities were in the range of 49.7\times10^{11}\sim3.7\times10^{12}\textrm{cm}^{-3}$. It is also expected that we can estimate the thickness uniformity of film fabricated by the ECR-PECVD system from the distribution of the plasma density.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.99-104
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• 2020

In this study, we fabricated a metamorphic high-electron-mobility transistor (mHEMT) device with a T-type gate structure for the implementation of W-band monolithic microwave integrated circuits (MMICs) and investigated its characteristics. To fabricate the mHEMT device, a recess process for etching of its Schottky layer was applied before gate metal deposition, and an e-beam lithography using a triple photoresist film for the T-gate structure was employed. We measured DC and RF characteristics of the fabricated device to verify the characteristics that can be used in W-band MMIC design. The mHEMT device exhibited DC characteristics such as a drain current density of 747 mA/mm, maximum transconductance of 1.354 S/mm, and pinch-off voltage of -0.42 V. Concerning the frequency characteristics, the device showed a cutoff frequency of 215 GHz and maximum oscillation frequency of 260 GHz, which provide sufficient performance for W-band MMIC design and fabrication. In addition, active and passive modeling was performed and its accuracy was evaluated by comparing the measured results. The developed mHEMT and device models could be used for the fabrication of W-band MMICs.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.9
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• pp.987-994
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• 2010

In this paper, a simple and effective active load-pull method is proposed, and the method to improve the efficiency of X-band power amplifier using harmonic control circuit is presented. The proposed active load-pull system mainly consists of directional coupler, phase shifter, short circuit, and power amplifier, and allows a user to access reflection coefficients near the edge of the Smith chart($\Gamma$=1) easily. The device used in this paper is Mitsubishi's GaAs FET MGF1801, and the operating frequency of the power amplifier is 9 GHz, The amplifier had output power of 21.65 dBm and drain efficiency of 24.9 % at class-A, and had output power of 21.46 dBm and drain efficiency of 53.3 % at class-AB. Harmonic control circuit is designed only second and third harmonic components because of the bandwidth limitation of the microwave components. The drain efficiency is improved as much as 6.4 % compared with class-AB power amplifier.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2003.05a
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• pp.443-446
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• 2003

This paper implement Remote Meter Reading System which is used Bluetooth and SMS in CDMA. This System propose system which tan detect a total amount of gas, electricity or water without a meterman, at home BlueTooth is a close range wireless communication technology which uses a wireless frequency 2.4GHz and has a high trust and self error correction technology according to a low power consumption quality and a high-speed frequency hopping. This makes get a high trust concerning a data transmission than an existing modem. In addition, though wireless modem is restricted by a minimal of a wireless terminal, it will be possible to coincide with the function of the portable with the low power consumption quality by using Bluetooth. And as the system on a chip of module progresses, the possibility of the small size is present. Nowadays, SMS Protocol in CDMA for have a network function based on PPP in CDMA Phone. The proposed Remote Meter Reading System to get more nobility, efficiency, and have good function. SMS Protocol in CDMA have profits which is low power, low cost, and low microwave output.

• Journal of the Korean Society for Aeronautical & Space Sciences
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• v.37 no.11
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• pp.1121-1130
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• 2009

In order to investigate the offshore wind resources, the measured data from the QuikSCAT satellite was analyzed from Jan 2000 to Dec 2008. QuikSCAT satellite is a specialized device for a microwave scatterometer that measures near-surface wind speed and direction under all weather and cloud conditions. Wind speed measured at 10 m above from the sea surface was extrapolated to the hub height by using the power law model. It has been found that the high wind energy prevailing in the south sea and the east sea of the Korean peninsula. From the limitation of seawater depth for piling the tower and archipelagic environment around the south sea, the west and the south-west sea are favorable to construct the large scale offshore wind farm, but it needs efficient blade considering relatively low wind speed. Wind map and monthly variation of wind speed and wind rose using wind energy density were investigated at the specified positions.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.20 no.8
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• pp.813-822
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• 2009

We have investigated operation of a 1:2:2 asymmetric 3-stage Doherty PA(Power Amplifier) and implemented using the Freescale's 4 W, 10 W PEP LDMOSFETS at 1 GHz. By employing the three peak efficiency characteristics, compared to the two peak N-way Doherty PA, the asymmetric 3-stage Doherty can overcome the serious efficiency degradation along the backed-off output power region and maximize the average efficiency for the modulation signal. To maximize the efficiency characteristic, the inverse class F PA has been designed as carrier and peaking amplifiers. Furthermore, to extract the proper load modulation operation, the adaptive gate bias control signal has been applied to the two peaking PAs based on the envelope tracking technique. For the 802.16e Mobile WiMAX(World Interoperability for Microwave Access) signal with 8.5 dB PAPR(Peak to Average Power Ratio), the proposed Doherty PA has shown 55.46 % of high efficiency at an average output power of 36.85 dBm while maintaining the -37.23 dB of excellent RCE(Relative Constellation Error) characteristic. This is the first time demonstration of applying the saturated PA and adaptive gate bias control technique to the asymmetric 3-stage Doherty PA for the highly efficient transmitter of the base-station application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.353-353
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• 2008

Carbon nanotubes (CNTs) are attractive for field emitter because of their outstanding electrical, mechanical, and chemical properties. Several applications using CNTs as field emitters have been demonstrated such as field emission display (FED), backlight unit (BLU), and X-ray source. In this study, we fabricated a CNT cathode using transparent ultra-thin CNT film. First, CNT aqueous solution was prepared by ultrasonically dispersing purified single-walled carbon nanotubes (SWCNTs) in deionized water with sodium dodecyl sulfate (SDS). To obtain the CNT film, the CNT solution in a milliliter or even several tens of micro-litters was deposited onto a porous alumina membrane through vacuum filtration process. Thereafter, the alumina membrane was solvated by the 3 M NaOH solution and the floating CNT film was easily transferred to an indium-tin-oxide (ITO) glass substrate of $0.5\times0.5cm^2$ with a film mask. The transmittance of as-prepared ultra-thin CNT films measured by UV-Vis spectrophotometer was 68~97%, depending on the amount of CNTs dispersed in an aqueous solution. Roller activation, which is a essential process to improve the field emission characteristics of CNT films, increased the UV-Vis transmittance up to 93~98%. This study presents SEM morphology of CNT emitters and their field emission properties according to the concentration of CNTs in an aqueous solutions. Since the ultra-thin CNT emitters prepared from the solutions show a high peak current density of field emission comparable to that of the paste-base CNT emitters and do not contain outgassing sources such as organic binders, they are considered to be very promising for small-size-but-high-end applications including X-ray sources and microwave power amplifiers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.6
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• pp.10-15
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• 2008

In this paper, a new NMOS gate cross-connected current-mirror type bridge rectifier for UHF RFID applications is presented. The DC converting characteristics of the proposed rectifier are analyzed with the high frequency equivalent circuit and the gate capacitance reduction technique for reducing the gate leakage current due to the increasing of operating frequency is also proposed theoretically by circuitry method. As the results, the proposed rectifier shows nearly same DC output voltages as the existing NMOS gate cross-connected rectifier, but it shows the gate leakage current reduced to less than 1/4 and the power consumption reduced more than 30% at the load resistor, and it shows more stable DC supply voltages for the valiance of load resistance. In addition, the proposed rectifier shows high enough and well-rectified DC voltages for the frequency range of 13.56MHz HF(for ISO 18000-3), 915MHz UHF(for ISO 18000-6), and 2.45 GHz microwave(for ISO 18000-4). Therefore, the proposed rectifier can be used as a general purpose one to drive RFID transponder chips on various RFID systems which use specified frequencies.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.6
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• pp.548-553
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• 2004

In this paper, single, two, and three-section microstrip directional couplers are implemented for realizing the high directivity characteristics. The achievement of the high directivity with microstrip configuration is carried out by the distributed capacitor to decrease the even and odd mode phase difference. Capacitive compensation is performed by gap coupling of open stub formed in sub-coupled line. Therefore, insertion loss and power handling capability are not affected by the gap coupling. The proposed structure is easy to fabricate and incorporate another microwave device due to the planner microstrip. We designed and fabricated single, two, and three-section directional coupler with 20 ㏈ coupling. In spite of microstrip structure, the capacitive compensation structure shows 30 ㏈, 27 ㏈, and 25 ㏈ of directivity in single, two, and three-section directional couplers, respectively.