• 전기학회논문지P
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• 제58권4호
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• pp.465-468
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• 2009

The dispersion relation and the characteristic of propagation are measured. The measurements of the dispersion relation are observed by a plunger method employed in slow plasma density by pumping microwaves on the axis are observed in plasma loaded slow wave structure. In case of small incident microwave powers the well known plasma density cavity are observed. At the axial positions of minimal radius in the waveguides, the maxima og the electron density, the plasma potential and the RF electric field are observed in cases of high-power microwaves.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2002년도 추계학술대회 논문집
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• pp.108-111
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• 2002

For the global microwave market, high RF power or deluxe model is applying for Inverter gradually. In this study, 120V/1200W high power Inverter was proposed and verified by an optimized design of PFM-type. Especially the steady power output control was fulfilling at +/- $10\%$ input voltage variation.

• 한국식품저장유통학회지
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• 제13권6호
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• pp.732-739
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• 2006

볶음처리한 새송이버섯의 마이크로웨이브 추출조건, 즉 에탄올 농도, 추출시간 및 마이크로웨이브 power에 따른 품질특성을 살펴보았다. 총 페놀성 화합물 함량, 전자공여능 및 pH 1.2에서의 아질산염소거능은 50% 에탄올로 추출한 경우 높게 나타났다. SOD 유사활성은 75% 에탄을 농도로 추출하였을때 가장 높은 활성을 나타났다. 가용성 고형분 및 총 페놀성 화합물 함량은 추출시간이 증가할수록 증가하다가 7분일 때 가장 높게 나타났으며, 전자공여능은 추출시간이 증가할수록 감소하는 것으로 나타났으며, SOD유사활성 및 아질산염소거능의 경우추출시간에 따른 유의적인 차이가 없는 것으로 나타났다. 마이크로웨이브 power 의 경우 100 W로 추출하였을 때 가용성 고형분, 총 페놀성화합물 함량 및 전자공여능 가장 높게 나타났다. SOD 유사 활성은 25 W일 때 높은 활성을 나타내었다. 그러나 아질산염 소거능은 마이크로웨이브 power에 영향을 많이 받지 않는 것으로 나타났다.

• 대한전자공학회논문지
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• 제14권5호
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• pp.7-14
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• 1977

주로 TWT로 사용되어 오던 2GHz 대 고출력증식기를 근래 개발되어 시판되기 시작한 microwave bipolar transistor를 사용하여 설계 제작하였다. 특히 고출력을 얻을 목적으로 balanced amplifier로 구성하였으며 microstripline을 사용해서 우수한 impedance정합효과를 얻었다. RF출력의 divider 및 combiner로서는 제작상의 편의를 감안해서 stripline directional coupler방식을 채택했으며 이것은 quadrature hybrid coupler로서 좋은 동작특성을 보였다. 직접 실용화를 감안해서 설계, 시작된 본 마이크로파 트랜지스터 증폭기는 측정결과 RF출력 14watt, 이득 14dB, 편파수대역폭 180MHz, 효율 40%의 우수한 종합특성을 얻었다.

• Journal of Advanced Marine Engineering and Technology
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• 제28권7호
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• pp.1172-1177
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• 2004

This paper describes a output power control of magnetron for microwave oven. Magnetron is used extensively in household microwave oven and industrial microwave heating devices it is operated by 3000[V]～5000[V] dc high voltage. Power supply for driving magnetron is consisted of a bridge rectifier. HB(half bridge) inverter, full wave rectifier and gate drive circuit. In proposed system. we confirm that line input power can be controlled extensively and linearly to 24.56[%] by change of duty ratio of inverter through a experiment.

• Journal of Advanced Marine Engineering and Technology
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• 제29권7호
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• pp.744-749
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• 2005

This paper describes the performance improvement of power control system of magnetron (MGT) for microwave oven. The MGT is used extensively in household microwave oven and industrial microwave heating devices, and is operated by 3.0[kV] $\∼$5.0[kV] dc high voltage. The proposed power supply is consisted of a bridge rectifier, step-up converter(SUC) and its controller, half bridge inverter(HBI) and its controller, and full wave double voltage rectifier(DVR). In the proposed system, a good power factor can be obtained by the SUC' switching method that the inductor current waveforms follows that of the rectified voltage, and a line input power can be controlled to a range of 17.5[$\%$] by duty ratio (DR) adjustment of the HBI.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.481-481
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• 2007

The characteristics of slow wave structure employed for backward wave oscillator expected to be a high power microwave source are studied analytically. The slow wave structure is a sinusodially corrugated wall waveguide. The waveguide is designed and transmitted characteristics for microwave are measured in the air. There exist literatures on high efficiency of enhansed radiation from backward wave oscillators involving plasmastudied experimentally another results.

• 한국결정성장학회지
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• 제15권1호
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• pp.10-15
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• 2005

Microwave plasma CVD 다이아몬드/Ti 박막 성장 시 CH₄/H₂ 가스의 유량비율, chuck bias, microwave power 등이 다이아몬드 박막의 구조적 특성과 입자밀도에 미치는 영향에 대하여 조사하였다. 2∼3 CH₄ Vol.% 조건일 때 sp³-결합성의 탄소 neutral 들이 우선적으로 형성되고 sp²-결합성의 탄소 neutral 들이 선택적으로 제거됨에 따라 양질의 다이아몬드 박막을 얻을 수 있었으며, 다이아몬드 입자 증착 기구를 해석하였다. Ti 기판에 걸어준 negative chuck bias가 증가함에 따라 다이아몬드 핵생성이 증진되어 다이아몬드 입자 밀도가 증가하였고, 임계 전압은 약 -50V 임을 확인하였다. 또한, microwave power가 증가함에 따라 미세결정질(micro-crystalline) graphite 층 생성이 제어되고 다이아몬드 층이 형성됨을 확인하였다.

• 농업과학연구
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• 제45권4호
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• pp.847-857
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• 2018

Recently, customers' demand and attention to dried agricultural products or foods have increased due to their convenience and nutritional values. Conventional drying methods such as solar drying and hot air drying have been most widely used for producing a large amount of dried agricultural products; however, those methods require quite a long time and high energy consumption. To compensate for these issues associated with conventional methods, dielectric heating such as microwave and radio frequency heating has been used as a supplemental method in the drying procedure. This study investigated the microwave drying characteristics of squash slices with different thicknesses under different microwave power intensities and determined the best drying model that could precisely describe the experimental drying curves of the squash slices. The squash was cut into slices with two different thicknesses (5 and 10 mm), and then, they were dried under different microwave power intensity ranges between 90 and 900 W with an increase interval of 90 W. Six drying models were tested to evaluate the fit to the experimental drying data, and the effective moisture diffusivity ($D_{eff}$) values of the squash slices under microwave drying were determined. The results clearly show that as the microwave power was increased, the drying time of both squash slices was significantly decreased, and the slope of the drying rate increased. The effective moisture diffusivity was also significantly related with the microwave power intensities and thicknesses of the slices. In addition, the Page model was most suitable to delineate the drying curves of both squash slices under different microwave power intensities.

• 전기학회논문지
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• 제56권7호
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• pp.1282-1287
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• 2007

We investigated the damage of the CMOS IC which manufactured three different technologies by high power microwave. The tests separated the two methods in accordance with the types of the CMOS IC located inner waveguide. The only CMOS IC which was located inner waveguide was occurred breakdown below the max electric field (23.94kV/m) without destruction but the CMOS IC which was connected IC to line organically was located inner waveguide and it was occurred breakdown and destruction below the max electric field. Also destructed CMOS IC was removed their surface and a chip condition was analyzed by SEM. The SEM analysis of the damaged devices showed onchuipwire and bondwire destruction like melting due to thermal effect. The tested results are applied to the fundamental data which interprets the combination mechanism of the semiconductors from artificial electromagnetic wave environment and are applied to the data which understand electromagnetic wave effects of electronic equipments.