• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.2
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• pp.18-23
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• 1992

Recently, SSPAs(Solid-State Power Amplifiers) with high linearity and efficiency replace TWTAs (Traveling-Wave-Tube Amplifiers) in satellite transponders. In this paper, a power amplifier with maximum output power is designed and constructed using GaAs FET(MGF-1302) as a test model for the development of SSPAs. For conjugate matching of input and output network, transimission lines and stubs are optimized using microwave CAD program, LINMIC+. Power amplifier is realized on the teflon substrate($\in$S1rT=2.45) with a bandwidth of 1GHz at a center frequency of 8GHz. Maximum stable gain of simulation and simulation and experimental result is obtained 9.23, 7.65 dB, respectively.

• The Transactions of the Korean Institute of Power Electronics
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• v.5 no.3
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• pp.300-306
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• 2000

지금까지 통상적으로 사용되는 전자레인지의 마그네트론 구동용 전력변환 장치는 성층 철심형 HVT를 이용한 방식을 적용하고 있다. 이 방식은 상용 주파수를 사용하므로, 승압트랜스포머나 배전압용의 커패시터를 대형으로 하기 때문에 고중량, 저효율 및 출력 한계성 등의 단점을 지닌다. 이의 해결책으로 최근 인버터 방식의 전원장치를 전자레인지에 적용하고자 하는 연구가 활발하게 진행되고 있다. 본 논문에서는 전자레인지용 마그네트론 구동을 위한 고압전원 발생장치로써 기존의 스위칭 기술과 공진 기법을 적용하여 고속스위칭을 통한 시스템의 소형, 경량화 및 고 전력밀도를 가지는 전원장치를 개발하여 그 특성을 고찰하였다.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.34 no.4C
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• pp.476-483
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• 2009

Tracking and detecting targets by the microwave seeker is affected by the clutter reflecting from the earth's surface. In order to detect retreating targets in look-down scenario, which appear in the sidelobe clutter (SLC) region, in the microwave seeker of high pulse repetition frequency (HPRF) mode, it is necessary to understand statistical characteristics of the surface SLC. Statistical analysis of SLC has been conducted for several kinds of the surface using data obtained by the captive flight test of the microwave seeker in the HPRF mode. The probability density function (PDF) fitting is conducted for several kinds and conditions of the surface. PDFs and PDF parameters, which best describe statistical distribution of the SLC power, are estimated. By using the estimated PDFs and PDF parameters, analyses for setting the target-detection thresholds, which give a desired level of target-detection false alarm probability, are made. These analysis materials for statistical characteristics of SLC power and the target-detection threshold can be used in various fields, such as development of a target-detection method, the constant false alarm rate processing.

• Journal of the Korean Institute of Telematics and Electronics
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• v.13 no.5
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• pp.1-8
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• 1976

Microwave GaAs Metal Semiconductor Field effect Transistors (MESFET) with the gate-length of two micrometers are investigated. The scattering parameters of the transistors have been measured from 1GHz to 2GHz by Hp8545 Automatic network analyzer. From the measured data, an equivalent circuit is established which consists of an ntrinsic and. extrinsic transistor elements. In this paper, GaAb MESFET Amplifier is used in conjunction with conventional microstrip techniques to match into a 50 ohms high input/output impedances system. We found that Power gain is less than 8dB and VSWR is less than 1.5 in L-Band.

• Korean Journal of Pharmacognosy
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• v.21 no.4
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• pp.284-289
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• 1990

Crude Aconiti Tubers were irradiated with microwave for 5 or 10 min with or without $NaHCO_3$. Ten min-irradiation reduced the contents of aconitine and mesaconitine to the level of those of commercially available processed Aconiti tuber power which is prepared with the high pressure-high temperature technique. The contents of benzoylaconine of the 10 min-irradiated Aconiti tubers were also comparable to those of commerciallized processed Aconiti tuber powder. However, irradiation with 1% $NaHCO_3$ soln. resulted in the drastic reduction of all the three above alkaloids.

• Transactions on Electrical and Electronic Materials
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• v.7 no.3
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• pp.103-107
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• 2006

In this paper, a CMOS complementary bridge rectifier for driving RFID transponder chips is presented. The proposed RFID CMOS complementary bridge rectifier is designed with two NMOSs at the input, which are configured by cross-connected gate structures, and two PMOSs and two NMOSs at the output, which are configured by diode-connected MOS structures. Output characteristics of the proposed rectifier are analyzed with the high frequency small-signal equivalent circuit and verified with SPICE for RFID operating frequencies of 13.56 MHz HF for ISO 18000-3, 915MHz UHF for ISO 18000-6, and 2.45 GHz microwave for ISO 18000-4. Simulation results show well-rectified and high enough DC output voltages for driving the low power microchip in the RFID transponder for the frequency range from HF to microwave. DC output voltages are dropped by only around 0.7 V from the input peak-to-peak voltages.

• Proceedings of the KIEE Conference
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• 2001.10a
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• pp.205-207
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• 2001

In response to this inverter microwave oven has been developed to improve high speed cooking time & energy saving performance. The voltage resonating inverter has a defect in switching element that works at 5 or 6times higher than input voltage. Especially, it is very difficult to choose the switching device is very high for the 220 (V) commercial voltage. In this paper, it is proposed the optimum method to realize the turbo 1200(W) output power for microwave oven that is employed the 900(V) IGBT with decreasing operating voltage of the switching component by making the 220(V), 1000(W) inverter through the active clamp voltage resonating inverter.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.609-615
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• 2000

A prototype electrodeless sulfur lamp was developed and investigated the spectroscopic characteristics. The emission spectra of $S_2$ in the microwave-discharged eletrodeless sulfur lamp (ESL) were studied at various input power. The emission spectra of the ESL shift to longer wavelength with increasing of the input power. We have shown that this is due to the self reversal effect in the high pressure gas discharge. We also show that the self reversal effect increases as the rotation of the discharged bulb. The spectral distribution of the ESL shifts about 45 nm toward visible region from UV region due to the rotation of the lamp bulb.

• Journal of Radiation Protection and Research
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• v.42 no.1
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• pp.21-25
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• 2017

Background: We are developing L-band and S-band microwave dielectric absorption systems aiming novel dosimetry using DNAs, such as plasmid DNA and genomic DNA, and microwave technology. Materials and Methods: Each system is composed of a cavity resonator, analog signal generator, circulator, power meter, and oscilloscope. Since the cavity resonator is sensitive to temperature change, we have made great efforts to prevent the fluctuation of temperature. We have developed software for controlling and measurement. Results and Discussion: By using this system, we can measure the resonance frequency, f, and ${\Delta}Q$ (Q is a dimensionless parameter that describes how under-damped an oscillator or resonator is, and characterizes a resonator's bandwidth relative to its center frequency) within about 3 minutes with high accuracy. Conclusion: This system will be expected to be applicable to DNAs evaluations and to novel dosimetric system.

• 한국정보통신설비학회:학술대회논문집
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• 2005.08a
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• pp.149-153
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• 2005

The optical fiber micro-cellular system requires the high linearity that determines the quality and capacity of system. Hence, there is a need for improving the linearity in mobile communication system. In order to compensate dispersion-induced signal distortion, we fabricated the optical feedforward transmitter. The compared 3rd-IMD was enhanced by 38 dB for two-tone case and the Adjacent Channel Power Ratio was enhanced by 20 dB for W-CDMA 1 carrier and by 16 dB for W-CDMA 3 carriers. Also, the induced noise level was reduced.