• 한국재료학회지
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• 제19권10호
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• pp.550-554
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• 2009

Unreported dielectrics based on the binary system of MgO-SiO$_2$ were investigated as potential candidates for microwave dielectric applications, particularly those demanding a high fired density and high quality factors. Extensive dielectric compositions having different molar ratios of MgO to SiO$_2$, such as 2:1, 3:1, 4:1, and 5:1, were prepared by conventional solid state reactions between MgO and SiO$_2$. 1 mol% of V$_2$O$_5$ was added to aid sintering for improved densification. The dielectric compositions were found to consist of two distinguishable phases of Mg$_2$SiO$_4$ and MgO beyond the 2:1 compositional ratio, which determined the final physical and dielectric properties of the corresponding composite samples. The increase of the ratio of MgO to SiO$_2$ tended to improve fired density and quality factor (Q) without increasing grain size. As a promising composition, the 5MgO.SiO$_2$ sample sintered at 1400 $^{\circ}C$ exhibited a low dielectric constant of 7.9 and a high Q $\times$ f (frequency) value of $\sim$99,600 at 13.7 GHz.

• 전기학회논문지
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• 제63권6호
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• pp.780-785
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• 2014

To assess the deterioration condition of stator insulation, diagnostic and AC dielectric strength tests were performed on five high voltage (HV) motors (2,000 HP, 6.6 kV) for boiler feed-water pump (BFP). Two HV motors for BFP were installed per unit. Following the long term rewinding program, the diagnostic test was performed on five 6.6 kV motors during the planning maintenance period. After completing diagnostic test, AC dielectric strength test was done on the stator windings of HV motors. The AC dielectric strength test was conducted at 15 kV for one minute. Dielectric strength test and diagnostics test results confirmed that the stator insulation was judged to be in serviceable condition in the five 6.6 kV motors.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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• pp.898-901
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• 2006

To fabricate mono layer green sheet (MLGS) of transparent dielectric for PDP front panel, dispersion of transparent dielectric slurry and various properties of green sheets were examined as a function of amount and kinds of organic additives. Sedimentation height and viscosity of slurry were measured to determine proper types and amount of dispersant in non-aqueous system transparent dielectric slurry. Many MLGS having various ratios of the transparent dielectric glass frit, binder and plasticizer were fabricated. Finally we got the transparent dielectric layer of high transparency and free from residual pore might be remained in the gap between the electrodes.

• 한국항행학회논문지
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• 제16권6호
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• pp.1038-1043
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• 2012

본 연구에서는 재구성 RF 회로 설계 응용을 위해 BZN/BST/BZN 다층 유전체를 이용한 고-가변 커패시터를 설계 및 그 특성을 측정하였다. 고-가변 특성의 BST계 강유전체와 저-손실 특성의 BZN계 상유전체를 이용하여 47%의 가변성과 0.005의 $tan{\delta}$ 값을 갖는 저-손실 고-가변 BZN/BST/BZN 다층 유전체를 제작하였다. 이 다층 유전체를 이용하여 quartz 기판 위에 $327{\times}642{\mu}m2$ 크기로 제작된 가변 커패시터 칩은 15 V의 인가전압과 800 MHz 주파수에서 Q-factor가 10이고 60 %의 가변율을 달성하였다.

• Journal of Korean Vacuum Science & Technology
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• 제3권2호
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• pp.130-133
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• 1999

Paraelectric ZrTiO4 thin films were synthesized on a Si(100) substrate using DC magnetron reactive sputtering. Films deposited above-400$^{\circ}C$ exhibited crystalline characteristics. The dielectric constants ($\varepsilon$) and dielectric losses (tan$\delta$) of as-deposited and annealed films were measured in the 1 MHz range using a Pt upper electrode and a phosphorous-doped si bottom electrode. Preliminary data showed that as the deposition temperature increased, the dielectric losses decreased while the dielectric constants did not change significantly. similar trends for dielectric losses were observed when the as-deposited samples were annealed at 800$^{\circ}C$. The reduction of dielectric losses at high-deposition temperatures and post annealing correlated well with the x-ray diffraction peak widths.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 추계학술대회 논문집 Vol.18
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• pp.149-150
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• 2005

According to the trend for electric power equipment of high capacity and reduction of its size, the needs for the new high performance electric equipments become more and more important. On of the possible solution is high temperature superconducting (HTS) power application. Following the successful development of practical HTS wires, there have been renewed activities in developing superconducting power equipment. HTS equipments have to be operated in a coolant such as liquid nitrogen ($LN_2$) or cooled by conduction-cooling method such as using Gifford-McMahon (G-M) cryocooler to maintain the temperature below critical level. In this paper, the dielectric strength of unfilled epoxy and filled epoxy in $LN_2$ was analyzed. The filled epoxy composite not only compensates for this fragile property but enhances its dielectric strength.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.16.1-16.1
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• 2008

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2005년도 춘계학술대회 논문집
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• pp.29-32
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• 2005

Poly (methyl methacrylate) (PMMA) is one of the promising representive of polymer gate dielectric for its high resistivity and sutible dielectric constant. PMMA (Mw=96700) films were prepared on p-Si by spin coating method. PMMA were coated compactively and flatly as observeed by AFM. MIS(Al/PMMA/p-Si) structure was made and capacitance-voltage (C-V) and current-voltage (I-V) measurements were done with PMMA films for different thermal treatment temperature. PMMA films were showed proper dielectric constant and breakdown voltage. Above the glass transition temperature PMMA films degraded. C-V measured at various frequencies, dielectric constant increased a little. The absence of hysteresis in the C-V characteristics, which eliminate the possibility of mobile charges in the PMMA films. The observed thermal stability, smooth surfaces, dielectric constant, I-V behavior implies PMMA formed by spin coating can be used as an efficient gate dielectric layer in OTFTs.

• 한국세라믹학회지
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• 제51권5호
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• pp.386-391
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• 2014

Silicon nitride ($Si_3N_4$) is regarded as one of the most promising materials for high temperature structural applications due to its excellent mechanical properties at both room and elevated temperatures. However, one high-temperature $Si_3N_4$ material intended for use in radomes has a relatively high dielectric constant of 7.9 - 8.2 at 8 - 10 GHz. In order to reduce the dielectric constant of the $Si_3N_4$, an in-situ reaction process was used to fabricate $Si_3N_4-SiO_2$-BN composites. In the present study, an in-situ reaction between $B_2O_3$ and $Si_3N_4$, with or without addition of BN in the starting powder mixture, was used to form the composite. The in-situ reaction process resulted in the uniform distribution of the constituents making up the composite ceramic, and resulted in good flexural strength and dielectric constant. The composite was produced by pressure-less sintering and hot-pressing at $1650^{\circ}C$ in a nitrogen atmosphere. Microstructure, flexural strength, and dielectric properties of the composites were evaluated with respect to their compositions and sintering processes. The highest flexural strength (193 MPa) and lowest dielectric constant (5.4) was obtained for the hot-pressed composites. The strength of these $Si_3N_4-SiO_2$-BN composites decreased with increasing BN content.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 센서 박막재료 반도체 세라믹
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• pp.277-281
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• 2003

Effects of $CaF_2$ addition as a filler on the high frequency dielectric properties and sintering of CaO-$Al_2O_3-SiO_2-B_2O_3$(CASB) and ZnO-MgO-$B_2O_3-SiO_2$(ZMBS) glass composites were investigated. The optimal glass composition in the CASB system was 33.0CaO-$17.0Al_2O_3-35.0SiO_2-15.0B_O_3$(in wt%). The corresponding dielectric properties were k=8.1 and $Q{\times}fo$=1,200GHz. The sintering temperature was $800{\mu}m$. In case of 2MBS system, 25.0ZnO-25.0MgO-20.0$B_2O_3-30.0SiO_2$(in wt%) glass showed k=6.8 and $Q{\times}fo$=5,200GHz when it was sintered at $750^{\circ}C$. The maximum amount of $CaF_2$ in the CASB and 2MBS glass system without any detrimental effect on the sintering was 25.0 v/o and 15.0 v/o, respectively. The addition of $CaF_2$ in the glass systems improved the high frequency dielectric properties. In case of CASB+$CaF_2$ composite, k was 7.1 and $Q{\times}fo$ was 2,300GHz. And in case of 2MBS+$CaF_2$ composite, k was 5.9 and $Q{\times}fo$ was 8,100GHz. $CaF_2$ addition also reduced sintering temperature. Effects of $CaF_2$ on the dielectric and sintering properties was analyzed in terms of viscosity and crystallization behavior changes due to the interaction between $CaF_2$ and the glass systems.