• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1487-1489
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• 2001

The tantalum oxide($Ta_2O_5$) is an important material for present thin-film capacitor application owing to its high dielectric constant and thermal stability. We report dielectric property of Si(p type)/Pt/$Ta_2O_5$/Ag based MIM structure obtained by RF sputtering and annealed in vacuum environment. We have measured and researched the characteristics of C-F, C-V and EPMA. And we describe parameter dependence on sputtered condition and annealed temperature with dielectric property.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.409-410
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• 2008

We studied dielectric properties of Organic Light-emitting Diodes(OLEDs) depending on applied voltage of AF(Amorphous Polytetrafluoroethylene), material of hole injection layer in structure of ITO/hole injection layer (AF)/Al. AF is deposited 5 [nm] as deposition rate of 0.1~0.2 [$\AA$/s] in high vacuum of $5\times10^{-6}$ [Torr]. In result of these studies, we can know dielectric properties of OLEDs. The impedance decreases as the applied voltage increases and the Cole-Cole plots of devices are decreases as the applied voltage increases.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 춘계학술회의 초록집
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• pp.21-21
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• 2010

(Ba,Sr)$TiO_3$ (BST) thin film with a perovskite structure has potential for the practical application in various functional devices such as nonvolatile-memory components, capacitor, gate insulator of thin-film transistors, and electro-optic devices for display. Normally, the BST thin films derived from sol-gel and sputtering are amorphous or partially crystalline when processed below $600^{\circ}C$. For the purpose of integrating BST thin film directly into a Si-based read-out integrated circuit (ROIC), it is necessary to process the BST film below $400^{\circ}C$. The microstructural and electrical properties of low-temperature crystallized BST film were studied. The BST thin films have been fabricated at $350^{\circ}C$ by UV-assisted rapidly thermal annealing (RTA). The BST films are in a single perovskite phase and have well-defined electrical properties such as high dielectric constant, low dielectric loss, low leakage current density, and high breakdown voltage. Photoexcitation of the organics contained in the sol-gel-derived films by high-intensity UV irradiation facilitates elimination of the organics and formation of the single-crystalline phase films at low temperatures. The amorphous BST thin film was transformed to a highly (h00)-oriented perovskite structure by high oxygen pressure processing (HOPP) at as low as $350^{\circ}C$. The dielectric properties of BST film were comparable to (or even better than) those of the conventionally processed BST films prepared by sputtering or post-annealing at temperature above $600^{\circ}C$. When external pressure was applied to the well-known contractive BST system during annealing, the nucleation energy barrier was reduced; correspondingly, the crystallization temperature decreased. The UV-assisted RTA and HOPP, as compatible with existing MOS technology, let the BST films be integrated into radio-frequency circuit and mixed-signal integrated circuit below the critical temperature of $400^{\circ}C$.

• 한국응용과학기술학회지
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• 제23권3호
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• pp.238-242
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• 2006

Polyimide is a well-known organic dielectric material, which has not only high chemical and thermal stability but also good electrical insulating and mechanical properties. In this research, the electric conduction mechanism of PI Ultra-Thin Films was investigated at room temperature. At low electric field, ohmic conduction $(I{\propto}V)$ was observed and the calculated electrical conductivity was about $4.23{\times}10^{-15}{\sim}9.81{\times}10^{-15}\;S/cm$. At high electric field, nonohmic conduction $(I{\propto}V^2)$ was observed and the conduction mechanism was explained by space charge limited region effect. The dielectric constant of PI Ultra-Thin Films was about 7.0.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1382-1384
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• 1998

Electroluminescence is occurred when phosphor is located in electric field. Object of this research show new type of powder electroluminescent device (PELD) for high brightness compared with conventional PELD. New type of PELD structured as follow ITO/phosphor + dielectric/Silver paste). To investigate optical properties of PELDs, EL spectrum, CIE coordinate system, Brightness of PELDs was measured. The suitable ratio between phosphor and dielectric in new type of PELD was 7:3(phosphor:dielectric). At 200 V 400 Hz, new type of PELD which had ratio of 7:3 was 5700 cd/$m^2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.203-204
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• 2008

In this study, in order to develop the multilayer piezoelectric actuator and ultrasonic resonator, PMN-PNN-PZT ceramics were fabricated by the variations of ball size at sintering temperature of $900^{\circ}C$ and their piezoelectric and dielectric characteristics were investigated as a function of the variations of ball size. When the ball size was 3mm$\phi$, density, dielectric constant$({\varepsilon}r)$, electromechanical coupling factor(kp) and piezoelectric d constant$(d_{33})$ were increased. At the ball size of 3mm$\phi$, the specimen showed the optimum values of density=7.909g/$cm^3$, kp=0.592, Qm=1292, $d_{33}$=368pC/N, $\varepsioln_r$=1502, respectively.

• 한국전자파학회:학술대회논문집
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• 한국전자파학회 2003년도 종합학술발표회 논문집 Vol.13 No.1
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• pp.59-63
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• 2003

Modal properties of guided waves along circular dispersive double negative (DNG) index metamaterial rod waveguides are numerically investigated. Identical forms of dispersive dielectric and magnetic material constants are used for simplicity. For degenerated azimuthally symmetric mode, a multimode region, a single mode region, a band gap region and a forbidden region are found which cannot be observed in the case of the conventional dielectric rod waveguide. As the normalized frequency goes down, discrete guided modes are continuously generated, which is a reverse property of conventional dielectric rod waveguide. Also, there are high-frequency cutoffs, which have been generally examined in dispersive circular geometries such as a plasma column or a plasma Goubau line. In the single mode region, both the low- and high-frequency cutoffs are existed where the propagation constants are continued between the guided oscillating and surface modes.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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• pp.544-547
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• 1999

To develop the better insulants. the zeolite particle, which is aluminosilicate mineral, was filled In the DGEBA/MDA/SN epoxy resin system. Dynamic DSC curves of cured specimens with various contents of zeolite were observed and the glass transition temperature(T$_{g}$) was obtained. According to this result, we could carry out the experiment concerned with the dielectric breakdown strength around T$_{g}$ and find the limit temperature for the application of the DDEBA/MDA/SN system filled with natural zeolite. T$_{g}$ increased with the content of zeolite. As the temperature increased, the dielectric breakdown strength decreased rapidly, in the region of T$_{g}$. At the high temperature, the deterioration by electrical stress was activated. The diameter of puncture at the high temperature was larger 7han that at the room temperature.erature.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2005년도 춘계학술대회 논문집
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• pp.1571-1574
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• 2005

Generally, the kerosene or the deionized water has been used for dielectric fluid in the electrical discharge machining. The spark occurs when the voltage is over the breakdown voltage and induces high temperature. In this study, the Oxygen gas is used as the dielectric. The voltage behavior in the dry Micro Electrical discharge machining is compared with that of the conventional Micro Electrical discharge machining. The dry Micro EDM has some advantages. The electrode wear isvery smaller than that of the conventional Micro EDM. The contamination in the dry Micro EDM can be drastically reduced comparing to that of the conventional Micro EDM. The Oxygen gas can be replaced as the dielectric successfully.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.497-501
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• 2003

In order to manufacture ceramic capacitors for the industrial electronic parts application using Tape casting method, the dielectric properties as a functions of sintering temperatures and the fabrication conditions of green sheet were investigated to consider the possibility of applications. When the mixing ratio of powder and solvent in slurry was 65:35, the uniform and dense green sheets was obtained. The dielectric constant was increased as the sintering temperature Over 94% of relative density and high were obtained to the specimens sintered at $1000^{\circ}C$. We can find that the device sintered at higher temperature than $1000^{\circ}C$ showed the relative density over 94% and the dielectric constant over 2000.