• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1598-1600
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• 1998

When dielectric surface electric field exceed any electric field strength on air, corona discharge is occurred from the dielectric surface. This paper presents corona discharge phenomena on the dielectric in high field were studied under application of ${\pm}DC$ voltage, constitute of the point to plane 20mm gap. The results obtained in experimental are summarized as follow :(1) Corona pulse is appeared periodically after first corona pulse is occurred and the number of corona pulse increases with the instantaneous applied voltage but peak value is not changed greatly.(2)Applied voltage to beccrite and characteristics and peak value of current are almost a straight line. That kind of tendency accorded with characteristics of beccrite resistance.(3)In case of Positive corona, Positive streamers, were progressed greatly to plane electrodes but In case of negative corona, negative streamers smaller than that of Positive corona.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.301.2-301.2
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• 2016

Metal-oxide thin-film transistors (TFTs) have gained a considerable interest in transparent electronics owing to their high optical transparency and outstanding electrical performance even in an amorphous state. Also, these metal-oxide materials can be solution-processed at a low temperature by using deep ultraviolet (DUV) induced photochemical activation allowing facile integration on flexible substrates [1]. In addition, high-dielectric constant (k) inorganic gate dielectrics are also of a great interest as a key element to lower the operating voltage and as well as the formation of coherent interface with the oxide semiconductors, which may lead to a considerable improvement in the TFT performance. In this study, we investigated the electrical properties of solution-processed high-k strontium-doped AlOx (Sr-AlOx) gate dielectrics. Using the Sr-AlOx as a gate dielectric, indium-gallium-zinc oxide (IGZO) TFTs were fabricated and their electrical properties are analyzed. We demonstrate IGZO TFTs with a 10-nm-thick Sr-AlOx gate dielectric which can be operated at a low voltage (~5 V).

• Journal of Information Display
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• v.11 no.3
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• pp.109-112
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• 2010

The solid phase compositions and dielectric properties of silicon nitride ($SiN_x$) films prepared using the plasma enhanced chemical vapor deposition (PECVD) technique at a low temperature ($200^{\circ}C$) were studied. Controlling the source gas mixing ratio, R = $[N_2]/[SiH_4]$, and the plasma power successfully produced both silicon-rich and nitrogen-rich compositions in the final films. The composition parameter, X, varied from 0.83 to 1.62. Depending on the film composition, the dielectric properties of the $SiN_x$ films also varied substantially. Silicon-rich silicon nitride (SRSN) films were obtained at a low plasma power and a low R. The photoluminescence (PL) spectra of these films revealed the existence of nano-sized silicon particles even in the absence of a post-annealing process. Nitrogen-rich silicon nitride (NRSN) films were obtained at a high plasma power and a high R. These films showed a fairly high dielectric constant ($\kappa$ = 7.1) and a suppressed hysteresis window in their capacitance-voltage (C-V) characteristics.

• 한국정보디스플레이학회:학술대회논문집
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• 2000.01a
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• pp.187-188
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• 2000

The conventional firing process method for the transparent dielectric layer in PDP Technology has disadvantages of low through put, high power consumption and large process area. We propose the rapid thermal scinterring (RTS) method as new process method to overcome these disadvantage characteristics. As the experimental result of this method, the optic transmittance(wavelength : 600nm) rate of transparent dielectric layer was more improved than conventional furnaces under the optimized gas supplying. Further, it was certified this method had the best conditions on the firing process of the PDP transparent dielectric layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.309-309
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• 2007

The LTCCs (low-temperature co-fired ceramics) are very important for electronic industry to build smaller RF modules and to fulfill the necessity for miniaturization of devices in wireless communication industry. The dielectric materials with sintering temperature $T_{sint}$<$900^{\circ}C$ are required. In this study, we investigated with glass-ceramic composition, which was crystallized with two crystals. The microstructure, crystal phases, thermal and mechanical properties, and dielectric properties of the composites were investigated using FE-SEM, XRD, TG-DTA, 4-point bending strength test and LCR measurement. The starting temperature for densification of a sintered body was at $779{\sim}844^{\circ}C$ and the glass frits were formatted to the crystal phases, $CaAl_2Si_2O_8$(anorthite) and $CaMgSi_O_6$(diopside), at sintering temperature. The sintered bodies exhibited applicable dielectric properties, namely 6-9 for ${\varepsilon}_r$. The results suggest that the glass-ceramic composite would be potentially possible to application of low dielectric L TCC materials.

• Advances in materials Research
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• v.1 no.1
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• pp.93-107
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• 2012

Epoxy resin is widely used in high voltage apparatus as insulation. Fillers are often added to epoxy resin to enhance its mechanical, thermal and chemical properties. The addition of fillers can deteriorate electrical performance. With the new development in nanotechnology, it has been widely anticipated that the combination of nanoparticles with traditional resin systems may create nanocomposite materials with enhanced electrical, thermal and mechanical properties. In the present paper we have carried out a comparative study on dielectric properties, space charge and dielectric breakdown behavior of epoxy resin/nanocomposites with nano-fillers of $SiO_2$ and $Al_2O_3$. The epoxy resin (LY556), commonly used in power apparatus was used to investigate the dielectric behavior of epoxy resin/nanocomposites with different filler concentrations. The epoxy resin/nanocomposite thin film samples were prepared and tests were carried out to measure their dielectric permittivity and tan delta value in a frequency range of 1 Hz - 1 MHz. The space charge behaviors were also observed by using the pulse electroacoustic (PEA) technique. In addition, traditional epoxy resin/microcomposites were also prepared and tested and the test results were compared with those obtained from epoxy resin/nanocomposites.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.60-60
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• 2008

We manufactured Liquid Crystal Polymer (LCP) and (1-x)$BaTiO_3-xSrTiO_3$(BST) ceramic composites and investigated dielectric properties to use as embedded capacitor in printed circuit boards and replace LTCC substrates. The dielectric properties of these composites are varied with volume fraction of BST and ratios of BT/ST. Dielectric constants are in the range of 3~28. In addition, we could get low TCC and High Q value that could not achieve in other ceramic-polymer composites. Especially, in composite with x=0.4 and 50vol% BST, the dieletric constant and Q-value are 27 and 300, respectively. And more TCC is -116~145ppm/$^{\circ}C$ in the temperature range of -55~$125^{\circ}C$. We think that this composites can be used high-Q substrate material like LTCC and embedded temperature compensation capacitor in printed circuit boards.

• Progress in Superconductivity and Cryogenics
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• v.14 no.1
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• pp.25-29
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• 2012

The novel type of cable under consideration is cooled by gaseous Helium at elevated pressure. Helium is known for having poor electric breakdown strength; therefore the dielectric capabilities of this type of cable must be tested under conditions similar to the envisaged operation. In order to study the dielectric performance we have designed and built a novel high pressure cryostat rated at 2.17 MPa which has been used for testing model cables of lengths of up to 1 m. The cryostat is an open system where the gas is not re-circulated. This allows maintaining a high purity of the gas. The target temperature range is between 40 K and 70 K. This substantially increases the critical current density of the HTS compared to 77 K, which is the typical temperature of cables cooled by liquid nitrogen. The cryostat presented allows for adjusting the temperature and keeping it constant for the time necessary to run a complete dielectric characterization test. We give a detailed description of the cryostat. Measurements of partial discharge inception voltages as well as the temperature distribution along the model cables as a function of time are presented.

• ETRI Journal
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• v.33 no.6
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• pp.887-896
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• 2011

We investigated the effects of a gate dielectric and its solvent on the characteristics of top-gated organic field-effect transistors (OFETs). Despite the rough top surface of the inkjet-printed active features, the charge transport in an OFET is still favorable, with no significant degradation in performance. Moreover, the characteristics of the OFETs showed a strong dependency on the gate dielectrics used and its orthogonal solvents. Poly(3-hexylthiophene) OFETs with a poly(methyl methacrylate) dielectric showed typical p-type OFET characteristics. The selection of gate dielectric and solvent is very important to achieve high-performance organic electronic circuits.

• Journal of Powder Materials
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• v.13 no.2 s.55
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• pp.129-137
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• 2006

In this study, high purity fine $BaTiO_3$ powders were prepared by SHS (Self-propagating High-temperature Synthesis). We would examinate the study of sintering properties and characteristics as a function of temperature with various additives (binder, sintering agent). In separately binder addition, the green and sintered density of specimen were increased as binder content increases. The increased porosity resulted in fine grain size due to the inhibition of grain boundary moving. The $Al_{2}O_{3},\;TiO_{2}$ and MgO playa role of increasing dielectric constants at room temperature. These values were decreased at curie temperature. In case of $SiO_2$, the Curie temperature was decreased. In this study, a high dielectric ceramic capacitor material with temperature stability was synthesized by using various additives.