• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.92-92
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• 2010

In this paper, the test is performed on MgO, which is used as a filler in epoxy additives, respectively (0, 1.0, 3.0, 5.0, 7.0, 10 [wt%]) for HVDC(high voltage direct current) submarine cable insulating material to improve electrical properties of epoxy resin in high temperature. The breakdown strength due to increasing amount of filler increased to 5.0 [wt%] by the effects of the Coulomb blockade. However, it is confirmed that strength of dielectric breakdown decreased because the filler functioned as impurities and affected the breakdown when filler additive exceeded by 5.0 [wt%] or more. We have found that the highest dielectric breakdown strength of specimen added 5.0 wt% at $25^{\circ}C$, and is more increased approximately 13.7 [%] than virgin specimen.

• Proceedings of the International Microelectronics And Packaging Society Conference
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• 2003.11a
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• pp.205-207
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• 2003

In this paper, we propose novel, small and integrated microwave chip filter using high dielectric substrates. A variety of dielectric substrates can be selected for the specifications of products according to dielectric, Q-factors, temperature stability ect. This paper describes an application of the very high dielectric constant (K=133) substrate for design of a band pass filter to a 5.8GHz Transmitter/receiver(T/R) module.

• Applied Microscopy
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• v.46 no.3
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• pp.155-159
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• 2016

This paper analyses the relationship between the distribution of a dielectric layer on the apex of a metal field electron emitter and the distribution of electron emission. Emitters were prepared by coating a tungsten emitter with a layer of epoxylite resin. A high-resolution scanning electron microscope was used to monitor the emitter profile and measure the coating thickness. Field electron microscope studies of the emission current distribution from these composite emitters (Tungsten-Clark Electromedical Instruments Epoxylite resin [Tungsten/CEI-resin emitter]) have been carried out. Two forms of image have been observed: bright single-spot images, thought to be associated with a smooth substrate and a uniform dielectric layer; and multi-spot images, though to be associated with irregularity in the substrate or the dielectric layer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.271-271
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• 2010

$BaTiO_3$(BT) has high permittivity so that has been applied to dielectric and insulator materials in 3D system-level package integration. In order to achieve excellent performance of device, the BT layer should be highly dense. In this study, BT thick films were prepared by the inkjet printing method. And these films were cured at $280^{\circ}C$ after infiltration of polymer resin. As a result, we have successfully fabricated not only the inkjet-printed hybrid BT film but also metal-insulator-metal(MIM) capacitor without sintering process. Changes in the dielectric constant of BT hybrid film with particle size and packing density were investigated. The dielectric constant was increased with increasing packing density and particle size. Further, the BT hybrid film using two different size particles had even higher packing density and dielectric constant.

• Journal of Integrative Natural Science
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• v.2 no.1
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• pp.13-17
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• 2009

A newly developed OTFT manufacturing process using the combination of self-assembly techniques and vapor phase polymerization method revealed that a thick $SiO_2$ dielectric layer (100~200 nm) is not well compatible with conducting polymer electrode, thereby resulting in still recognizable contact resistance, unstable $V_{th}$ and leaking off current. A couple of very recent studies showed that this issue may be solved by replacing such inorganic dielectric with a self-assembled monolayer or multilayer (organic) dielectric. Therefore, this short review introduces recent trends in the development of high performance thin film transistor consisting of both organic semiconductor and SAM dielectric.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08a
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• pp.367-370
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• 2007

An EEFL with the sodium free alumino-silicate glass of high K and low $tan{\delta}$, has been investigated. As compared with borosilicate and the soda-lime EEFLs, the luminous efficiency as well as the pinhole stability of new EEFLs improves remarkably without blackening of $NaHg_2$.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.420-422
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• 1995

PVDF (polyvinylidene fluoride) has at least from known crystalline structure ( ; they are referred to as the $\alpha$, $\beta$, $\gamma$ and $\alpha_p$ phase or forms II, I, III and $IV_p$). In this study, the manufactured PVDF thin films through vapor deposition method had for II ( ; the substrate temperature at 30$^{\circ}C$). The dielectric behavior of poly(vinylidene fluoride) is affected by orientation and crystal modification. The very high value of the dielectric constant for high temperature conditioned film is believed to be due to the orientation effect. The loss peak caused by molecular motion of the molecules in crystalline regions.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05a
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• pp.61-64
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• 2003

The degradation of the dielectric properties of insulating papers that were used under loaded conditions at cryogenic temperature was paid attention. Electrical and tensile stress properties of dielectric paper at cryogenic temperature have been investigated to optimum insulating design of high-Tc superconducting(HTS) cable. Tensile strength of PPLP in liquid nitrogen was high more than that of air, but tensile strain could know that decrease sharply. According as tensile strength increases, the breakdown stress of PPLP in liquid nitrogen was decreased.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.49 no.11
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• pp.603-608
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• 2000

$(Ba, Sr)TiO_{3}$[BST] thin films were fabricated on the Pt/TiO$_2$/SiO$_2$/Si substrate by the RF sputtering. The structure and dielectric properties of the BST thin films with the substrate temperature were investigated. Increasing the substrate temperature, The BST phase increased and barium multi titanate phases decreased. Increasing the frequency, the dielectric constant decreased and the dielectric loss increased. The dielectric constant and dielectric loss of the BST thin films deposited at 50$0^{\circ}C$ were 300 and 0.018, respectively at 1 kHz. The leakage current density of the BST thin films deposited at 50$0^{\circ}C$ was $10^{-9}$ A/$\textrm{cm}^2$ with applied voltage of 3V. Because of the high dielectric constant(300), low dielectric loss(0.018) and low leakage current($10^{-9}$ A/$\textrm{cm}^2$), BST thin films deposited at 50$0^{\circ}C$ is expecting for the application of DRAM.

• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.290-298
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• 2018

In order to investigate the effect of thickness on the dielectric and piezoelectric properties of (001) PMN-29PT single crystals, three different types of PMN-29PT samples were prepared using the solid-state single crystal growth (SSCG) method: high density crystal [99%], low density crystal [95%], and high density crystal doped with Mn [98.5%]. When their thickness decreased from 0.5 mm to 0.05 mm, their dielectric constant ($K_3{^T}$), piezoelectric constants ($d_{33}$ and $g_{33}$), and electromechanical coupling factor ($k_t$) decreased continuously. However, their dielectric loss (tan ${\delta}$) increased. The addition of Mn to PMN-PT induced an internal bias electric field ($E_I$), increased the coercive electric field ($E_C$), and prevented local depoling. Therefore, Mn-doped PMN-PT crystals show high stability as well as high performance, even in the form of very thin plates (< 0.2 mm), and thus are suitable for application to high frequency composites, medical ultrasound probes, non-destructive testing devices (NDT), and flexible devices.