• Applied Science and Convergence Technology
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• v.23 no.2
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• pp.90-96
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• 2014

Flexible $ZrO_2$ films as dielectric materials for high-energy-density capacitors were deposited on polyethylene terephthalate (PET) substrates by RF magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible $ZrO_2$ films were dependent on the sputtering pressure and gas ratio. Although $ZrO_2$ films were deposited at room temperature, all films showed a tetragonal crystalline structure regardless of the sputtering variables. The surface of the film became a surface with large white particles upon an increase in the $O_2/Ar$ gas ratio. The RMS roughness and crystallite size of the $ZrO_2$ films increased with an increase in the sputtering pressure. The electrical properties of the $ZrO_2$ films were affected by the microstructure and roughness. The $ZrO_2$ films exhibited a dielectric constant of 21~38 at 1 kHz and a leakage current density of $10^{-6}{\sim}10^{-5}A/cm^2$ at 300 kV/cm.

• KIEE International Transactions on Electrophysics and Applications
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• v.4C no.3
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• pp.101-105
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• 2004

The efficient power MOSFET inverter applied for a simple and low cost power supply is proposed for driving the dielectric barrier discharge (DBD) lamp load. For decades, the DBD phenomenon has been used for ozone gas production in industry. In this research, the ultraviolet and visible light sources utilizing the DBD lamp is considered as the load for solid-state high frequency power supply. It is found that the simple voltage-source single-ended quasi-resonant ZVS inverter with only one active power switch could effectively drive this load with the output power up to 700 W. The pulse density modulation based control scheme for the single-ended quasi-resonant ZVS inverter using a low voltage and high current power MOSFET switching device is proposed to provide a linear power regulation characteristic in the wide range 0-100％ of the full power as compared with the conventional control based Royer type parallel resonant inverter type power supplies.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.11a
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• pp.48.1-48.1
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• 2009

Performance of organic field-effect transistors (OFETs) with various temperature-cured polyacrylate(PA) copolymer as a gate insulator was studied. The PA thin film, which was cured at an optimized temperature, showed high dielectric strength (>7 MV/cm), low leakage current density ($5{\times}10^{-9}\;A/cm^2$ at 1 MV/cm) and enabled negligible hysteresis in MIS capacitor and OFET. A field-effect mobility of ${\sim}0.6\;cm^2/V\;s$, on/off current ratio (Ion/Ioff) of ${\sim}10^5$ and inverse subthreshold slope (SS) as low as 1.22 V/decwere achieved. The high dielectric strength made it possible to scale down the thickness of dielectric, and low-voltage operation of -5 V was successfully realized. The chemical changes were monitored by FT-IR. The morphology and microstructure of the pentacene layer grown on PA dielectrics were also investigated and correlated with OFET device performance.

• Proceedings of the KIEE Conference
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• 1998.07e
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• pp.1788-1790
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• 1998

The dielectric layers in AC plasma display panel(AC PDP) are essential to the discharge cell structure, because they protect metal electrodes from sputtering by positive ion bombarding in discharge plasma and form a sheath of wall charges which are essential to memory function of AC PDP. This layer should have high dielectric strength and also be transparent because the luminance of PDP is strongly correlated this layer. In this paper, we discussed the dielectric strength and transparency of the dielectric layer under various conditions. As a result, on the $15{\mu}m$ thickness, the minimum dielectric strength was $29V/{\mu}m$ and the transmittance coefficient was about 80% after $570^{\circ}C$ firing process. It can be proposed that the resonable dielectric thickness in AC PDP is $15{\mu}m$ because it has about 80V margin on the maximum applied voltage.

• Journal of the Korean Ceramic Society
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• v.49 no.2
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• pp.179-184
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• 2012

The size of various alumina ceramics used in semiconductor and display industry is required to increase with increase in wafer and panel size. In this research, large alumina ceramics were fabricated by uniaxial pressing, cold isostatic pressing and filter pressing with commercial powder and thereafter sintering at $1600^{\circ}C$ in gas furnace. The large alumina ceramics exhibited dense microstructure corresponding to 98.5% of theoretical density and 99.8% of high purity. The impurities and microstructural defects of the alumina were found to influence the resistance and dielectric properties. The volume resistances in these four aluminas were almost the same while the pure alumina was higher value. The dielectric constant, dielectric loss and dielectric strength of aluminas were placed within the range of 10.3~11.5, 0.018~0.036, and 10.1~12.4 kV/mm, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.411.1-411.1
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• 2016

In this study, we examined the effects of boron doping on the dielectric reliability of solution processed aluminum oxide ($Al_2O_3$). When boron is doped in aluminum oxide, the hysteresis reliability is improved from 0.5 to 0.4 V in comparison with the undoped aluminum oxide. And the accumulation capacitance is increased when boron was doped, which implying the reduction of the thickness of dielectric film. The improved dielectric reliability of boron-doped aluminum oxide is originated from the small ionic radius of boron ion and the stronger bonding strength between boron and oxygen ions than that of between aluminum and oxygen ions. Strong boron-oxygen ion bonding in aluminum oxide results dielectric film denser and thinner. The leakage current of aluminum oxide also reduced when boron was doped in aluminum oxide.

• Transactions on Electrical and Electronic Materials
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• v.7 no.2
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• pp.67-71
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• 2006

In this paper, we have investigated the structure and dielectric properties of the $(Ba_{0.6}Sr_{0.4})TiO_3$ (BST) thin films fabricated on MgO(100)/Si substrate by an alkoxide-based sol-gel method. Both the structure and morphology of those films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). For the MgO(100)/Si substrate, the BST thin films exhibited highly (100) orientation. The highly (100)-oriented BST thin films showed high dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, dielectric loss and tunability of the BST thin films annealed at $700^{\circ}C$ deposited on the MgO(100)/Si substrate measured at 10 kHz were 515.9, 0.0082, and 54.3%, respectively.

• The Transactions of the Korean Institute of Electrical Engineers P
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• v.63 no.4
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• pp.356-360
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• 2014

The environmental pollution caused by green-house gases such as $SF_2$ has been becoming the main issue of industrial society. As a part of these efforts, 180 countries signed the Kyoto Protocol in 1997 to cut back on their green-house gas emissions [1]. Therefore, a study on the dielectric characteristics of the $GN_2$ is important for designing a eco-friendly high voltage apparatuses. In this paper, to develop an electrically reliable, stable, and eco-friendly high voltage apparatus, the breakdown voltage and partial discharge inception voltage characteristics in $GN_2$ considering utilization factors are studied for the establishment of insulation design criteria of an high voltage apparatus. Dielectric experiments are performed by using several kinds of sphere-plane electrode systems made of stainless steel. Also, the dielectric characteristics of the $GN_2$ are analyzed by using a Finite Elements Method (FEM) according to various field utilization factors. The results are expected to be applicable to designing the high voltage apparatuses using $GN_2$ as an insulation gas.

• Transactions on Electrical and Electronic Materials
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• v.4 no.1
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• pp.15-20
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• 2003

NiCr alloys are prepared onto poly-Si/ $SiO_2$/Si substrates to replace Pt bottom electrode with a new one for integration of high dielectric constant materials. Alloys deposited at Ni and Cr power of 40 and 40 W showed optimum properties in the composition of N $i_{1.6}$C $r_{1.0}$. The grain size of films increases with increasing deposition temperature. The films deposited at 50$0^{\circ}C$ showed a severe agglomeration due to homogeneous nucleation. The NiCr alloys from the rms roughness and resistivity data showed a thermal stability independent of increasing annealing temperature. The 80 nm thick BST films deposited onto N $i_{1.6}$C $r_{1.0}$/poly-Si showed a dielectric constant of 280 and a dissipation factor of about 5 % at 100 kHz. The leakage current density of as-deposited BST films was about 5$\times$10$^{-7}$ A/$\textrm{cm}^2$ at an applied voltage of 1 V. The NiCr alloys are possible to replace Pt bottom electrode with new one to integrate f3r high dielectric constant materials.terials.

• ETRI Journal
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• v.23 no.4
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• pp.199-201
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• 2001

The phase noise reduction in a configuration of the HEMT oscillator with a dielectric resonator coupled by a quarter-wavelength impedance inverter is investigated. Two HEMT oscillators for a satellite payload system are manufactured in the same configuration except for the coupling configuration of the dielectric resonator (DR) in order to empirically demonstrate the phase noise reduction. Experimental result shows that a phase noise reduction by 14 dB can be enhanced by increasing the characteristic impedance of a coupling microstrip impedance inverter.