• Progress in Superconductivity
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• 제9권2호
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• pp.173-176
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• 2008

[ $MgB_2$ ] films grown by hybrid physical chemical vapor deposition under appropriate growth conditions commonly exhibit columnar grain structure. The grain boundaries between adjacent columnar grains have been reported to be good flux pinning centers. In this work, we measured the angular dependence of critical current density ($J_c$) and observed the enhanced flux pinning when an external magnetic field was aligned parallel to the columnar direction. This $J_c$ was almost comparable to the $J_c$ for intrinsic pinning case up to 1 T at low temperatures, indicating that grain boundary pinning is very effective. At high fields, however, $J_c$ decreased rapidly resulting from the fact that the density of flux pinning centers provided by grain boundaries was outnumbered by the flux density.

• 한국결정성장학회지
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• 제14권4호
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• pp.151-154
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• 2004

Issues of ferroelectric high-density memories (>64 Mb) indispensable for upcoming ubiquitous era have been on the cell integration less than $0.1\;\mu\textrm{m}^2$ and reliabilities. Thus nanoscale control of microstructures of ferroelectric films with large switching polarization has been one of the issues to obtain the uniform electrical properties for realization of high-density memories. In this study the grain orientations and distributions of BT-based films by spin-on coatings were examined by FEG-SEM/EBSD. Ferroelectric domain characteristics by PFM were also performed to study the dependence of reliabilities on the grain orientations and distributions. It is believed that understandings of the nucleation and growth mechanisms of the a- or b-axis oriented films during the thermal processes such as RTA and furnace annealing affecting on grain orientation and uniformity could be possible based on our experimental results.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2000년도 전력전자학술대회 논문집
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• pp.685-688
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• 2000

Pulse plating is about to deposit material at high current density compared to conventional DC plating. For example pulse plating can get more fine grain can improve adhension and metal distribution and current efficiency can reduce internal stress and crack. therefore we studied pulsed power supply which has high current density and improve deposition quality and increase plating speed in this paper.

• Journal of Welding and Joining
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• 제33권5호
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• pp.31-34
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• 2015

Microstructure and tensile property in the weld heat-affected zone (HAZ) of austenitic Fe-Mn-Al-C low density steels were investigated through transmission electron microscopy analysis and tensile tests. The HAZ samples were prepared using Gleeble simulation with high heat input welding condition of 300 kJ/cm, and the HAZ peak temperature of $1200^{\circ}C$ was determined from differential scanning calorimetry (DSC) test. The strain- stress responses of base steels showed that the addition of V improved the tensile and yield strength by grain refinement and precipitation strengthening. Tensile strength and elongation decreased in the weld HAZ as compared to the base steel, due to grain growth, while V-added steel had a higher HAZ strength as compared than V-free steel.

• Nuclear Engineering and Technology
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• 제52권1호
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• pp.148-154
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• 2020

The radiation induced segregation of Cr at grain boundaries (GBs) in Ferritic/Martensitic steels was modeled assuming vacancy and interstitialcy diffusion mechanisms. In particular, the dependence of segregation on temperature and grain boundary misorientation angle was analyzed. It is found that Cr enriches at grain boundaries at low temperatures primarily through the interstitialcy mechanism while depletes at high temperatures predominantly through the vacancy mechanism. There is a crossover from Cr enrichment to depletion at an intermediate temperature where the Cr:Fe vacancy and interstitialcy diffusion coefficient ratios intersect. The bell-shape Cr enrichment response is attributed to the decreasing void sinks inside the grains as temperature rises. It is also shown that low angle grain boundaries (LAGBs) and special Σ coincidence-site lattice (CSL) grain boundaries exhibit suppressed radiation induced segregation (RIS) response while high angle grain boundaries (HAGBs) have high RIS segregation. This different behavior is attributed to the variations in dislocation density at different grain boundaries.

• 한국분말재료학회지
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• 제17권1호
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• pp.52-58
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• 2010

Bulk nanostructured metallic materials are generally synthesized by bottom-up processing which starts from powders for assembling bulk materials. In this study, the bottom-up powder metallurgy and High Pressure Torsion (HPT) approaches were combined to achieve both full density and grain refinement at the same time. After the HPT process at 473K, the disk samples reached a steady state condition when the microstructure and properties no longer evolve, and equilibrium boundaries with high angle grain boundaries (HAGBs) were dominant. The well dispersed alumina particles played important role of obstacles to dislocation glide and to grain growth, and thus, reduced the grain size at elevated temperature. The small grain size with HAGBs resulted in high strength and good ductility.

• 한국표면공학회지
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• 제37권4호
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• pp.196-199
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• 2004

Seedlayers with low surface energy which increases the density of nucleation sites in the initial growth region of the recording layer deposited on them was studied to reduce grain size in recording layer. The seedlayer with low surface energy was so effective to attain finer grain in magnetic upper-layers. The Ni-Fe-O intermediate layer with low surface energy was found to be effective in reduction of grain size as well as magnetic cluster size of Co-Cr-Ta-Pt recording layer. Furthermore, the reduction of grain size in Co-Cr-Ta-Pt recording layer on Ni-Fe-O intermediate layer with low surface energy led to decrease the noise level in the high recording density region.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 하계학술대회 논문집 C
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• pp.1427-1429
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-Wire CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the wire temperature($T_w$). The films deposited at high $T_w$ of 2000$^{\circ}C$ have superior crystalline properties; average lateral grain sizes are larger than $1{\mu}m$ and there at·e no vertical grain boundaries. The surface of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and textured surface are believed to give high current density when applied to solar cells. However, the poly-si films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.

• 한국분말재료학회지
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• 제18권5호
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• pp.411-416
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• 2011

In this study, powder metallurgy and severe plastic deformation by high-pressure torsion (HPT) approaches were combined to achieve both full density and grain refinement at the same time. Water-atomized pure iron powders were consolidated to disc-shaped samples at room temperature using HPT of 10 GPa up to 3 turns. The resulting microstructural size decreases with increasing strain and reaches a steady-state with nanocrystalline (down to ~250 nm in average grain size) structure. The water-atomized iron powders were deformed plastically as well as fully densified, as high as 99% of relative density by high pressure, resulting in effective grain size refinements and enhanced microhardness values.

• 한국태양에너지학회 논문집
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• 제21권1호
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• pp.1-10
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• 2001

Polycrystalline silicon(poly-Si) films are deposited on low temperature glass substrate by Hot-CVD(HWCVD). The structural properties of the poly-Si films are strongly dependent on the temperature$(T_w)$. The films deposited at high $T_w$ of $2000^{\circ}C$ have superior crystalline proper average lateral grain sizes are larger than $1{\mu}m$ and there are no vertical grain boundaries. The sur of the high $T_w$ samples are naturally textured like pyramid shape. These large grain size and text surface are believed to give high current density when applied to solar cells. However, the poly films are structurally porous and contains high defect density, by which high concentration of C and O resulted within the films by air-penetration after removed from chamber.