• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.46 no.12
• /
• pp.1-5
• /
• 2009

In this paper, low phase noise push-push oscillator (OSC) using the metamaterial resonator for missile defense systems and satellite communication was design and implemented. The metamaterial resonator has the large coupling coefficient value, which makes a high Q value, and has reduced phase noise of OSC. The OSC with 1.8 V power supply has phase noise of -117 dBc/Hz @100 kHz in the 12 GHz. When it has been compared with metamaterial resonator and coventional spiral resonator, the reduced Q value has been -29.7 dB and -47.6 dB respectively. This low phase noise OSC using metamaterial resonator could be available to a OSC in X-band.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.21 no.1
• /
• pp.107-114
• /
• 2021

In this paper, a planar transistor oscillator for X-band using a newly proposed L-shaped monopole slot resonator is proposed. For planar design, an L-shaped monopole slot with an open-end is used as a resonator for a transistor oscillator. As a result of the simulated design of the resonator in three stages, a high Q value of 1169.84 and a high insertion loss of 49.934 dB were identified. The results of the final design and manufactured oscillator measurements confirmed that the oscillation output is greater than 7 dBm and has good phase noise characteristics of -58 dBc/Hz at 100 kHz offset. The proposed oscillator is planar and has the advantage of being directly applicable to microwave integrated circuit technology. It also has the advantage of being able to reduce its size as it can only be implemented in microstrip form without additional devices such as metal cavities and tuning screws in 3D structures, as in the case of a DRO (dielectric resonance oscillator).

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.49 no.2
• /
• pp.67-71
• /
• 2012

In this paper, a push-push oscillator at K-band with a double H-shape metamaterial resonator (DHMR) based on high-Q is proposed with metamaterial structure to improve the phase noise and output power. The proposed oscillator shows low phase noise and high output power. DHMR is designed to be high-Q at resonance frequency through strong coupling of E-field. oscillators which are combined in push-push structure improve output power. The propose push-push oscillator shows the output power of 3.1 dBm, the fundamental signal suppression of -23.7 dBc and phase noise of -116.28 dBc at 100 kHz offset frequency and 20.20 GHz center frequency.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.46 no.11
• /
• pp.56-60
• /
• 2009

In this paper, a novel voltage controlled oscillator (VCO) has been presented by using the microstrip square multiple spiral resonator for reducing the phase noise of VCO. The microstrip multiple square resonator has the large coupling coefficient value, which makes a high Q value, and has reduced phase noise of VCO. The VCO with 1.8 V power supply has phase noise of -115.0~-117.34 dBc/Hz @100 kHz in the tuning range, 8.935~9.4 GHz. When it has been compared with microstrip square multiple spiral resonator and coventional spiral resonator, the reduced Q value has been -32.7 dB and -57.6 dB respectively. This low phase noise VCO could ve available to a VCO in X-band.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2008.05a
• /
• pp.59-62
• /
• 2008

In this paper, we study ZnO-based a film bulk acoustic resonator (FBAR) using a multi-layered Bragg reflector. We insert chromium adhesion layers of 0.03 mm-thick to the Bragg reflector and improve the performance using thermal treatments. At operating frequency about 2.5 GHz, excellent resonance characteristics are observed in terms of good return loss and high quality factor.

• ETRI Journal
• /
• v.33 no.1
• /
• pp.125-127
• /
• 2011

This letter presents a new type of resonator, namely, the split quarterwave microstrip resonator (SQMR), to improve the poor harmonic suppression and low Q-factors in conventional quarterwave microstrip resonators. An oscillator incorporating the proposed SQMR is designed, fabricated, and tested to demonstrate that, not only the second harmonic suppression, but also the phase noise of the oscillator can be improved. The oscillator with the SQMR shows improved second harmonic suppression of -74.59 dBc and phase noise figure of merit of -169.77 dBc/Hz at 1 MHz offset.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
• /
• 2008.10a
• /
• pp.61-65
• /
• 2008

In this paper, we studied a ZnO-based film bulk acoustic resonator (FBAR) device fabricated on a specially designed multi-layerd Bragg reflector part. Very thin chromium adhesion layers (0,03um thick) were additionally deposited to improve the quality of the Bragg reflector and some thermal treatments were performed to improve the resonant characteristics of the device. At the operating frequency of ${\sim}2.7GHz$, excellent resonant characteristics were observed in terms of return loss and quality factor, and effective electromechanical coupling coefficient. These findings are expected to be highly promising and effective for improving the performance of the FBAR devices at high frequency.

• Korean Journal of Optics and Photonics
• /
• v.28 no.2
• /
• pp.59-67
• /
• 2017

This paper proposes an asymmetric split-loop resonator with an outer square loop (ASLR-OSL), which can actively control terahertz wave transmission properties while maintaining a high-Q-factor of the asymmetric split-loop resonator (ASLR). An added outer square loop is designed to play the roles of both a metamaterial and a micro-heater, which can control the temperature through a directly applied bias voltage. A vanadium dioxide ($VO_2$) thin film, which exhibits an insulator-metal phase transition with temperature change, is used to control the transmission properties. The proposed ASLR-OSL shows transmission properties similar to those of the ASLR, and they can be successfully controlled by directly applying bias voltage to the outer square loop. Based on these results, an electrically controllable terahertz high-Q metamaterial could be achieved simply by adding a square loop to the outside of a well-known high-Q metamaterial.

• Journal of electromagnetic engineering and science
• /
• v.14 no.1
• /
• pp.9-14
• /
• 2014

This paper discusses the resonant characteristics, such as the resonant frequencies and Q factors, as well as tuning methods of the resonant frequency of the triple-mode dielectric resonators, for their possible application to compact bandpass filters for mobile communication systems. The resonators include spheres and cylindrical rods that can be applied to compact bandpass filters. These high Q ceramic resonators can replace the conventional coaxial type resonators, which are large sized and also have relatively low Q values. Both simulated and measured results show that the Q values of the sphere and rod reach 27,000 and 24,000, respectively. Decoupling of degenerate modes is also briefly discussed.

• Journal of the Institute of Electronics Engineers of Korea TC
• /
• v.41 no.5
• /
• pp.69-76
• /
• 2004

In this paper, a VCDRO (Voltage Control Dielectric Resonator Oscillator) with low phase noise for X-band application has been designed and fabricated. A low noise and low flicker noise MESFET and a high Q dielectric resonator were selected to obtain good phase noise Performance. Also, a varactor diode having high Q, qualify factor was used to reduce the loading effects and a big Gamma of diode was chosen for linearity of frequency over voltage tuning range. The fabricated circuits was simulated with circuit design tools, ADS to provide the optimum performances. As the measured results of fabricated oscillator, the output power was 5.8 ㏈m at center frequency 12.05㎓ and harmonic suppression -30㏈c, phase noise -114 ㏈c at 100 KHz offset frequency, respectively, and the frequency tuning range as the function of valtage applied to varactor diode was 15.2 MHz and its power variation with frequency was 0.2 ㏈. This oscillator could be available to a local oscillator in X-band.