• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.290-294
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• 2001

In this study, ZnO is evaporated to be coated on n-type Si wafer substrate. Refractive coefficient of thin film that is evaporating TiO$_2$ onto ZnO increases linearly as thickness is getting thinner to have high value and high angle and it satisfies theoretical equation I(x)=Io exp (-$\alpha$x) theory that represents the strength of photon energy advancing through ZnO thin film. And dielectric constant of TiO$_2$ thin film evaporated onto ZnO is high and $\varepsilon$$_2$ is smaller than $\varepsilon$$_1$. The specimen TiO$_2$ thin film evaporated onto ZnO has much higher dielectric constant when photon energy is increased.

• 한국전기전자재료학회논문지
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• 제16권7호
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• pp.641-646
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) substrate using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in the presence of a N$_2$ reactive gas. We calculated dielectric constant, $\varepsilon$$\_$s/, with a capacitance Schering bridge method. We investigated the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were increased drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and C=N bonds. The carbon nitride thin films were observed crystalline phase confirmed by x-ray diffraction data.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.208-211
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• 2003

The dielectric carbon nitride thin films were deposited onto Si(100) using a pulsed laser ablation of pure graphite target combined with a high voltage discharge plasma in nitrogen gas atmosphere. We can be calculated dielectric constant, ${\varepsilon}_s$, with a capacitance Sobering bridge method. We reported to investigate the influence of the laser ablation of graphite target and DC high voltage source for the plasma. The properties of the deposited carbon nitride thin films were influenced by the high voltage source during the film growth. Deposition rate of carbon nitride films were found to increase drastically with the increase of high voltage source. Infrared absorption clearly shows the existence of C=N bonds and $C{\equiv}N$ bonds. The carbon nitride thin films were observed crystalline phase, as confirmed by x-ray diffraction data.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.276-276
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• 2014

High-performance, fully-transparent, and top-gated oxide thin-film transistor (TFT) was successfully fabricated with Ta2O5 high-k gate dielectric on a glass substrate. Through a self-passivation with the gate dielectric and top electrode, the top-gated oxide TFT was not affected from H2O and O2 causing the electrical instability. Heat-treated InSnO (ITO) was used as the top and source/drain electrode with a low resistance and a transparent property in visible region. A InGaZnO (IGZO) thin-film was used as a active channel with a broad optical bandgap of 3.72 eV and transparent property. In addition, using a X-ray diffraction, amorphous phase of IGZO thin-film was observed until it was heat-treated at 500 oC. The fabricated device was demonstrated that an applied electric field efficiently controlled electron transfer in the IGZO active channel using the Ta2O5 gate dielectric. With the transparent ITO electrodes and IGZO active channel, the fabricated oxide TFT on a glass substrate showed optical transparency and high carrier mobility. These results expected that the top-gated oxide TFT with the high-k gate dielectric accelerates the realization of presence of fully-transparent electronics.

• E2M - 전기 전자와 첨단 소재
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• 제9권4호
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• pp.336-343
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• 1996

We have studied the preparation and the properties of $Ba_{1-x}$Sr$_{x}$TiO$_{3}$(BST) thin films by using the sol-gel method. Through the comparison of the effects of various solvents and additives in making solutions, we establish the production method of the stable solution which generates the high quality of BST film. We also set up the heat-treatment conditions for depositing the BST thin film through the TGA and XRD analyses. Through the comparison of the surface conditions of BST films deposited on Pt/Ta/SiO$_{2}$/Si and Pt/Ti/SiO$_{2}$/Si substrates, we find that Ta is more efficient diffusion barrier of Si than Ti so that Ta layer prevents the formation of hillocks. We fabricate the planar type capacitor and measure the dielectric properties of the BST thin film deposited on the Pt/Ta/SiO$_{2}$/Si substrate. Dielectric constant and dielectric loss tangent at 1V, 10kHz, and leakage current density at 3V of the BST thin film are 339, 0.052 and 13.3.mu.A/cm$^{2}$, respectively.ely.

• 한국결정성장학회지
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• 제11권2호
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• pp.60-66
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• 2001

($Ba_x$$Sr_{1-x}$)$TiO_3$ (x=0.9, 0.7, 0.5)박막을 졸-겔법으로 ITO-coated glass기판 위에 제조하였다. BST의 perov-skite상 생성온도는 $600^{\circ}C$ 이상이며 Sr함량이 증가할수록, $Ba^{2+}$ 이온보다 작은 $Sr^{2+}$ 이온에 의해 perovskite상들의 피크가 높은 회절 각도로 이동하였다. 그리고 온도가 증가할수록 결정립은 조대화 되었고, Sr 함량이 증가할수록 결정립은 미세화 되었다. BST(50/50)의 유전상수 값은 다른 두 조성보다 큰 값을 나타내고 유전손실 값은 더 낮았다. 1 kHz때의 BST(50/50)박막의 유전상수 및 유전손실 값은 각각 652와 0.042였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.836-839
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• 2001

Ba(Zr$_{x}$Ti$_{l-x}$)O$_3$(BZT) thin films of x=0.2 and 150nm thickness were prepared on Pt/SiO$_2$/Si substrate by RF Magnetron Sputtering deposition at several temperature (40$0^{\circ}C$, 50$0^{\circ}C$, $600^{\circ}C$). As the substrates temperature increase, crystallization of the films and high dielectric constants can be obtained. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature, and the film's breakdown voltage is higher in low temperature.ure.

• 한국표면공학회지
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• 제34권5호
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• pp.481-485
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• 2001

We investigated the structural and electrical properties of the Ba ($Zr_{x}$ $T_{il-x}$ )$O_3$ (BZT thin films with a mole fraction of x=0.2 and thickness 150 nm for the application in MLCC (Multilayer Ceramic Capacitor). BZT films were prepared on $Pt/SiO_2$/Si substrate at various substrate temperatures by the RF-magnetron sputtering system. When the substrate temperature was above $500^{\circ}C$, we could obtain multi-crystalline BZT films oriented at (110), (111), and (200) directions. The crystallization of the film and high dielectric constant were observed with the increase of substrate temperature. Capacitance of the film deposited at high temperature is more sensitive to the applied voltage than that of the film deposited at low temperature. This paper reports surface morphology, dielectric constant, dissipation factor, and C-V characteristics for BZT films deposited at three different temperatures. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties but a little small dielectric constant for MLCC application.

• 한국표면공학회지
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• 제25권3호
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• pp.126-132
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• 1992

Recent VLSI requires materials with high dielectric constant in order to reduce their storage capacitor areas. Thin TaOx film was formed from Ta(OCH3)5 by photo-CVD method at a low temperature. The result shows that the film obtained by photo-CVD method is this study has good step coverage, high dielectric constant (20-25) and low leakage current. The high strong peaks from Ta(4f), Ta(4d), and O(ls) levels were observed by XPS analysis. From the diffraction pattern and TEM prcture analysis, the TaOx thin film was observed to be amorphous. This kind of the deposition method could be considered to be a very promising method applied to VLSI.

• 한국전기전자재료학회논문지
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• 제14권7호
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• pp.567-571
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• 2001

We investigated the structural and electrical properties of Ba(Zr$_{x}$Ti$_{1-x}$ )O$_3$(BZT) thin films with a mole fraction of x=0.2 and a thickness of 150 nm. BZT films were prepared on Pt/SiO$_2$/Si substrate with the various substrate temperature by a RF magnetron sputtering system. When the substrate temperature was above 50$0^{\circ}C$, we obtained multi-crystalline BZT films oriented to (110), (111), and (200) directions. As the substrate temperature increases, the films are crystallized and their dielectric constants become high. C-V characteristic curve of the film deposited at high temperature is more sensitive than that of the film deposited at low temperature. The parameters of the BZT film are as follows; the dielectric constants(dissipation factors) at 1 MHz are 95(0.021), 140(0.024), and 240(0.033) deposited at 400, 500, $600^{\circ}C$, respectively; the leakage currents at 666.7 kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ fo the films deposited at 400, 500, and 600 $^{\circ}C$, respectively; the leakage currents at 666.7kV/cm are 5.73, 23.5, and 72.8x10$^{-8}$ A/$\textrm{cm}^2$ for the films deposited at 400, 500, $600^{\circ}C$, respectively. The BZT film deposited at 40$0^{\circ}C$ shows stable electrical properties, but dielectric constant for application is a little small.ll.