• 반도체디스플레이기술학회지
• /
• 제7권1호
• /
• pp.1-5
• /
• 2008

In this paper, we fabricated pressure difference type gas flow sensor using only dry etching technology by ICP-RIE(inductive coupled plasma reactive ion etching). The sensor's structure consists of a common shear stress type piezoresistive pressure sensor with an orifice fabricated in the middle of the sensor diaphragm. Generally, structure like diaphragm is fabricated by wet etching technology using TMAH, but we fabricated diaphragm by only dry etching using ICP-RIE. To equalize the thickness of diaphragm we applied insulator($SiO_2$) layer of SOI(Si/$SiO_2$/Si-sub) wafer as delay layer of dry etching. Size of fabricated diaphragm is $1000{\times}1000{\times}7\;{\mu}m^3$ and overall chip $3000{\times}3000{\times}7\;{\mu}m^3$. We measured the variation of output voltage toward the change of gas pressure to analyze characteristics of the fabricated sensor. Sensitivity of fabricated sensor was relatively high as about 1.5mV/V kPa at 1kPa full-scale. Nonlinearity was below 0.5%F.S. Over-pressure range of the fabricated sensor is 100kPa or more.

• 전기화학회지
• /
• 제24권4호
• /
• pp.120-132
• /
• 2021

기존 LiCoO₂의 고전압 사용의 제약에 따른 용량적 한계와 코발트 원료의 높은 가격을 해결하기 위하여 high-Nickel에 대한 개발이 활발히 진행되고 있지만 Ni 함량의 증가에 따른 구조적 안정성의 저하에 의한 전지 특성의 저하는 상용화를 지연시키는 중요한 원인이 되고 있다. 이에 Ni-rich 삼성분계 양극소재 LiNi_0.6Co_0.2Mn_0.2O₂의 고안정성을 높이고자 전구체에 균일한 이종원소 Ti를 치환을 위해서 나노크기의 TiO₂ 서스펜젼 형태 소스를 사용하여 전구체 Ni_0.6Co_0.2Mn_0.2-x(OH)₂/xTiO₂를 제조하였다. Li₂CO₃와 혼합하고, 열처리 후 양극활물질 LiNi_0.6Co_0.2Mn_0.2-xTi_xO₂ 합성하여 Ti 함량에 따른 물리적 특성을 비교하였다. Field Emission Scanning electron Microscope(FE-SEM) 및 Energy Dispersive Spectroscopy (EDS) mapping 분석을 통해 Ti 치환된 구형의 전구체와 입자 크기 측정을 통해 균일한 입자크기를 가지는 양극 활물질 제조를 확인하였고, 내부치밀도와 강도가 증가함을 확인 하고, X-ray Diffractometry (XRD) 구조 분석과 Inductively Coupled Plasma Mass Spectrometry (ICP-MS) 정량분석을 통해 Ti 치환된 양극활물질 제조 및 고온, 고전압에서 충·방전을 지속하더라도 효과적으로 용량이 유지됨을 확인하였다.

• 전력전자학회논문지
• /
• 제10권6호
• /
• pp.578-586
• /
• 2005

최근 디지털 방송의 시행에 따라 평판디스플레이(FPD)의 수요가 증가하고 있다. 그 중에서도 PDP는 대화면, 고감도, 넓은 시야각, 얇은 두께 등의 장점을 가지기 때문에 다른 FPD 매체들에 비해 경쟁력이 있다. 그리고 최근 PDP 패널의 공정 간소화로 인해 PDP 패널의 제작 비용이 감소하는 추세에 있기 때문에 대화면용 PDP에 관심이 집중되고 있다. 따라서 본 논문에서는 넓은 영전압 스위칭 범위를 갖는 대화면용 PDP 유지전원단을 위한 고효율 전력 변환회로를 제안하고 여러 가지 구동 신호를 인가하여 제안된 회로의 동작을 분석하였다. 기존의 42" PDP는 낮은 부하조건에 대해서 ZVS가 이루어지지 않게 되는데 시간에 따라서 급격하게 변하는 PDP의 부하 특성 때문에 많은 열이 발생하게 된다. 그러나 제안된 60" PDP 회로의 경우, 부가적으로 ZVS를 위한 에너지를 공급해 줄 수 있는 회로를 달아주었기 때문에 넓은 ZVS 영역을 갖게 된다. 그리고 이러한 장점 때문에 스위칭 손실이 감소하여 기존의 컨버터에 비해서 높은 효율을 기대할 수 있을 뿐만 아니라 심각한 열 문제가 없이 안정적인 조건에서 동작하는 것이 가능해 진다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
• /
• pp.135-135
• /
• 2015

Tubes are of extreme importance in industries as for fluid channels or wave guides. Furthermore, some weapon systems such as cannons use the tubes as gun barrels. To increase the service life of such tubes, a protective coating must be applied to the tubes' inner surface. However, the coating methods applicable to the inner surface of the tubes are very limited due to the geometrical restriction. A small-diameter cylindrical magnetron sputtering gun can be used to deposit coating layers on the inner surface of the large-bore tubes. However, for small-bore tubes with the inner diameter of one inch (~25 mm), the magnetron sputtering method can hardly be accommodated due to the space limitation for permanent magnet assembly. In this study, a new approach to coat the inner surface of small-bore tubes with the inside diameter of one inch was developed. Instead of using permanent magnets for magnetron operation, an external electro-magnet assembly was adopted around the tube to confine the plasma and to sustain the discharge. The electro-magnet was operated in pulse mode to provide the strong axial magnetic field for the magnetron operation, which was synchronized with the negative high-voltage pulse applied to the water-cooled coaxial sputtering target installed inside the tube. By moving the electro-magnet assembly along the tube's axial direction, the inner surface of the tube could be uniformly coated. The inner-surface coating system in this study used the tube itself as the vacuum chamber. The SS-304 tube's inner diameter was 22 mm and the length was ~1 m. A water-cooled Cu tube (sputtering target) of the outer diameter of 12 mm was installed inside of the SS tube (substrate) at the axial position. The 50 mm-long electro-magnet assembly was fed by a current pulse of 250 A at the frequency and pulse width of 100 Hz and 100 usec, respectively. The calculated axial magnetic field strength at the center was ~0.6 Tesla. The central Cu tube was synchronously driven by a HiPIMS power supply at the same frequency of 100 Hz as the electro-magnet and the applied pulse voltage was -1200 V with a pulse width of 500 usec. At 150 mTorr of Ar pressure, the Cu deposition rate of ~10 nm/min could be obtained. In this talk, a new method to sputter coat the inner surface of small-bore tubes would be presented and discussed, which might have broad industrial and military application areas.

• 대한전자공학회논문지SD
• /
• 제37권11호
• /
• pp.18-24
• /
• 2000

(Ba,Sr)$TiO_3$ 박막은 ULSI-DRAM 즉 1-4 Gbit급 DRAM용 셀(cell) 커패시터의 새로운 유전물질로 각광받고 있다. 본 연구에서는 ICP 장비에서 $BCl_3/Cl_2/Ar$ 플라즈마로 (Ba,Sr)$TiO_3$ 박막을 식각하였다. 이때 RF power/dc bias voltage는 600W/-250V, 반응로의 압력은 10mTorr 이었다. $Cl_2/(Cl_2+Ar)$은 0.2로 고정하였고, $BCl_3$ 가스를 첨가하면서 (Ba,Sr)$TiO_3$ 박막을 식각하였다. $BCl_3$ 가스를 10% 첨가하였을 때, $480{\AA}/min$으로 (Ba,Sr)$TiO_3$ 박막은 가장 높은 식각 속도를 나타내었다. $Cl_2/Ar$가스에 $BCl_3$의 첨가 비에 따른 Cl, BCl 및 B의 라디칼 밀도를 optical emission spectroscopy(OES)에 의해 구하였다. $BCl_3$를 10% 첨가하였을 때 Cl의 라디칼 밀도가 가장 높았다. (Ba,Sr)$TiO_3$ 박막의 표면반응을 규명하기 위하여 XPS 분석을 수행한 결과 이온 bombardment 식각이 Ba-O 결합을 파괴하고 Ba와 Cl의 결합형태인 $BaCl_2$을 제거하기 위하여 필요하다. Sr과 Cl의 결합의 양은 많지 않고, Sr은 주로 물리적인 스퍼터링에 의하여 제거된다. Ti와 Cl은 화학적으로 반응하여 $TiCl_4$ 결합형태로 용이하게 제거된다. 식각후 단면사진을 SEM을 통해 본 결과 식각단면이 약 65~70$^{\circ}$ 정도였다.

• 한국표면공학회:학술대회논문집
• /
• 한국표면공학회 2016년도 추계학술대회 논문집
• /
• pp.197-197
• /
• 2016

Commercially pure titanium (CP Ti) and Ti-6Al-4V alloys have been widely used for biomedical applications. However, the use of the Ti-6Al-4V alloy in biomaterial is then a subject of controversy because aluminum ions and vanadium oxide have potential detrimental influence on the human body due to vanadium and aluminum. Hence, recent works showed that the synthesis of new Ti-based alloys for implant application involves more biocompatible metallic alloying element, such as, Nb, Hf, Zr and Mo. In particular, Nb and Hf are one of the most effective Ti ${\beta}-stabilizer$ and reducing the elastic modulus. Plasma electrolyte oxidation (PEO) is known as excellent method in the biocompatibility of biomaterial due to quickly coating time and controlled coating condition. The anodized oxide layer and diameter modulation of Ti alloys can be obtained function of improvement of cell adhesion. Manganese(Mn) plays very important roles in essential for normal growth and metabolism of skeletal tissue in vertebrates and can be detected as minor constituents in teeth and bone. Radio frequency(RF) magnetron sputtering in the various PVD methods has high deposition rates, high-purity films, extremely high adhesion of films, and excellent uniform layers for depositing a wide range of materials, including metals, alloys and ceramics like a hydroxyapatite. The aim of this study is to research the Mn coatings on the micro-pore formed Ti-29Nb-xHf alloys by RF-magnetron sputtering for dental applications. Ti-29Nb-xHf (x= 0, 3, 7 and 15wt%, mass fraction) alloys were prepared Ti-29Nb-xHf alloys of containing Hf up from 0 wt% to 15 wt% were melted by using a vacuum furnace. Ti-29Nb-xHf alloys were homogenized for 2 hr at $1050^{\circ}C$. Each alloy was anodized in solution containing typically 0.15 M calcium acetate monohydrate + 0.02 M calcium glycerophosphate at room temperature. A direct current power source was used for the process of anodization. Anodized alloys was prepared using 270V~300V anodization voltage at room. Mn coatings was produced by RF-magnetron sputtering system. RF power of 100W was applied to the target for 1h at room temperature. The microstructure, phase and composition of Mn coated oxide surface of Ti-29Nb-xHf alloys were examined by FE-SEM, EDS, and XRD.

• 한국산업보건학회지
• /
• 제16권3호
• /
• pp.254-263
• /
• 2006

Manganese has a role as both toxic and essential in humans. Manganese is also an essential component in the welding because it increases the hardness and strength, prevents steel from cracking of welding part and acts as a deoxidizing agent to form a stable weld. In this study, manganese generation rate and its content was determined in flux cored arc welding on stainless steel. Domestic two products and foreign four products of flux cored wires were tested in the well designed fume generation chamber as a function of input power. Welding fume was measured by gravimetric method and metal manganese was determined by inductively coupled plasma-atomic emission spectrophotometer. The outer shell of the flux cored wire tube and inner flux were analyzed by scanning electron microscopy to determine their metal compositions. Manganese generation rate($FGR_{mn}$) was increased as the input power increased. It was 16.3 mg/min at the low input power, 38.1 mg/min at the optimal input power, and up to 55.4 mg/min at the high input power. This means that $FGR_{mn}$ is increased at the work place if welder raise the current and/or voltage for the high productivity. The slope coefficient of $FGR_{mn}$ was smaller than that of the generation rate of total fume(FGR). Also, the correlation coefficient of $FGR_{mn}$ was 0.65 whereas that of FGR is 0.91. $FGR_{mn}$ was equal or higher in the domestic products than that of the foreign products although FGR was similar. From the electron microscopic analytical data, we concluded that outer shell of the wire was composed mainly of iron, chromium, nickel and less than 1.2 % of manganese. There are many metal ingredients such as iron, silica, manganese, zirconium, titanium, nickel, potassium, and aluminum in the inner flux but they were not homogeneous. It was found that both $FGR_{mn}$ and content of manganese was higher and more varied in domestic flux cored wires than those of foreign products. To reduce worker exposure to fumes and hazardous component at the source, further research is needed to develop new welding filler materials that improve the quality of flux cored wire in respect to these points. Welder should keep in mind that the FGR, $FGR_{mn}$ and probably the generation rate of other hazardous metals were increased as the input power increase for the high productivity.

• Current Photovoltaic Research
• /
• 제7권4호
• /
• pp.97-102
• /
• 2019

Bifacial and semitransparent hydrogenated amorphous silicon (a-Si:H) thin-film solar cells in p-i-n configuration were prepared with front and rear transparent conducting oxide (TCO) electrodes using plasma-enhanced chemical vapor deposition method. Fluorine-doped tin oxide and tin-doped indium oxide films were used as front and rear TCO contacts, respectively. Film thickness of intrinsic a-Si:H absorber layers were controlled from 150 nm to 450 nm by changing deposition time. The dependence of performance characteristics of solar cells on the front and rear illumination direction were investigated. For front illumination, gradual increase in the short-circuit current density (J_SC) from 10.59 mA/㎠ to 14.19 mA/㎠ was obtained, whereas slight decreases from 0.83 V to 0.81 V for the open-circuit voltage (V_OC) and from 68.43% to 65.75% for fill factor (FF) were observed. The average optical transmittance in the wavelength region of 380 ~ 780 nm of the solar cells decreased gradually from 22.76% to 15.67% as the absorber thickness was changed from 150 nm to 450 nm. In case of the solar cells under rear illumination condition, the J_SC increased from 10.81 to 12.64 mA/㎠ and the FF deceased from 66.63% to 61.85%, while the V_OC values were maintained at 0.80 V with increasing the absorber thickness from 150 nm to 450 nm. By optimizing the deposition parameters, a high-quality bifacial and semitransparent a-Si:H solar cell with 350 nm-thick i-a-Si:H absorber layer exhibited the conversion efficiencies of 7.69% for front illumination and 6.40% for rear illumination, and average visible optical transmittance of 17.20%.

• 한국결정성장학회지
• /
• 제22권1호
• /
• pp.5-10
• /
• 2012

일반적으로 mesa 구조의 발광다이오드 제작은 MOCVD법으로 수행되고 있다. 특히 개개의 발광다이오드 칩을 식각하고 분리하기 위해서 발광다이오드는 반응성이온식각(RIE)공정과 절단(scribing) 공정을 거치게 된다. 플라즈마를 이용한 건식식각공정인 RIE 공정은 결함, 전위, 표면의 댕글링 본드 형성과 같은 몇 가지 문제점을 유발하고, 이러한 이유로 인해 소자 특성을 저하시킨다. 선택영역성장법은 사파이어 기판 위에 고품질의 GaN 에피층을 성장시키는 방법으로써 주목받고 있다. 본 논문에서는 고품질의 막을 제작하고 공정을 간소화하기 위해서 선택영역성장법을 도입하였고, 기존의 발광다이오드 특성에 영향을 주지 않는 선택영역의 크기를 규정하고자 한다. 실험에 사용된 원형의 선택성장영역의 직경크기는 2500, 1000, 350, 200 ${\mu}m$이고, 선택성장 된 발광다이오드의 소자 특성을 얻고자 SEM, EL, I-V 측정을 시행하였다. 주된 발광파장의 위치는 직경크기 2500, 1000, 350, 200 ${\mu}m$에서 각각 485, 480, 450, 445 nm로 측정되었다. 직경 350, 200 ${\mu}m$에서는 불규칙한 표면과 기존 발광다이오드보다 높은 저항 값을 얻을 수 있었지만, 직경 2500, 1000 ${\mu}m$에서는 평탄한 표면과 앞서 말한 350, 200 ${\mu}m$의 특성보다 우수한 전류-전압 특성을 얻을 수 있었다. 이러한 결과들로 기존 발광다이오드의 특성에 영향을 주지 않는 적당한 선택성장 직경크기는 1000 ${\mu}m$ 이상임을 확인하였다.