• 한국진공학회지
• /
• 제21권6호
• /
• pp.301-311
• /
• 2012

결정질 태양전지 등의 도핑 공정에 적용하기 위한 플라즈마 제트 장치의 기초 방전 특성을 조사한다. 대기압에서의 아르곤 플라즈마 제트와 대기 압력변화에 대한 대기 플라즈마 제트, 그리고 아르곤 분위기 압력 변화에 대한 플라즈마 제트의 전류-전압은 전형적인 정상 글로우 방전의 특성을 갖는다. 대기압 플라즈마 제트의 방전 전압은 약 2.5 kV의 높은 전압이 요구되며, 대기 및 아르곤 플라즈마 제트는 200 Torr 이하의 낮은 압력에 대한 방전 전압은 약 1 kV가 된다. 도핑용 실리콘 웨이퍼에 조사되는 단일 채널 플라즈마 제트의 전류는 인가전압의 조정에 의하여 수 10~50 mA의 고 전류를 용이하게 얻는다. 플라즈마 제트를 웨이퍼에 조사하는 경우에 웨이퍼의 온도 상승은 정상상태에서 약 $200^{\circ}C$가 된다. 실리콘 웨이퍼에 도핑 용재인 액상의 인산을 도포하여 플라즈마를 조사한 결과 얻어진 인 원자의 도핑 분포는 플라즈마 제트 도핑의 가능성을 보여준다.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2002년도 International Meeting on Information Display
• /
• pp.586-589
• /
• 2002

The Ultra Violet(UV) emission characteristics of Neon + Nitrogen gas-mixture discharge was investigated in AC plasma display panel. The firing voltage of Ne+$N_2$ gas-mixture discharge increased with increasing nitrogen concentration. The UV intensity emitted from the gas discharge also increased with increasing nitrogen concentration. The UV efficiency increase with increasing $N_2$ partial pressure at low $N_2$ concentration, and then UV efficiency is saturated at high $N_2$ concentration.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2000년도 제1회 학술대회 논문집
• /
• pp.105-106
• /
• 2000

The positive slope of the current-voltage characteristic at pressure up to 850 torr was obtained using the closed microhollow cathode without the individual and/or distributed ballast. This indicates that the stable parallel operation of the discharge was also achieved using the closed microhollow cathode. The parallel operation makes it possible to manufacture de plasma displays with high pressure, small discharge current, and long lifetime.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
• /
• pp.96-97
• /
• 2012

In nitride and oxide film deposition, sputtered metals react with nitrogen or oxygen gas in a vacuum chamber to form metal nitride or oxide films on a substrate. The physical properties of sputtered films (metals, oxides, and nitrides) are strongly influenced by magnetron plasma density during the deposition process. Typical target power densities on the magnetron during the deposition process are ~ (5-30) W/cm2, which gives a relatively low plasma density. The main challenge in reactive sputtering is the ability to generate a stable, arc free discharge at high plasma densities. Arcs occur due to formation of an insulating layer on the target surface caused by the re-deposition effect. One current method of generating an arc free discharge is to use the commercially available Pinnacle Plus+ Pulsed DC plasma generator manufactured by Advanced Energy Inc. This plasma generator uses a positive voltage pulse between negative pulses to attract electrons and discharge the target surface, thus preventing arc formation. However, this method can only generate low density plasma and therefore cannot allow full control of film properties. Also, after long runs ~ (1-3) hours, depends on duty cycle the stability of the reactive process is reduced due to increased probability of arc formation. Between 1995 and 1999, a new way of magnetron sputtering called HIPIMS (highly ionized pulse impulse magnetron sputtering) was developed. The main idea of this approach is to apply short ${\sim}(50-100){\mu}s$ high power pulses with a target power densities during the pulse between ~ (1-3) kW/cm2. These high power pulses generate high-density magnetron plasma that can significantly improve and control film properties. From the beginning, HIPIMS method has been applied to reactive sputtering processes for deposition of conductive and nonconductive films. However, commercially available HIPIMS plasma generators have not been able to create a stable, arc-free discharge in most reactive magnetron sputtering processes. HIPIMS plasma generators have been successfully used in reactive sputtering of nitrides for hard coating applications and for Al2O3 films. But until now there has been no HIPIMS data presented on reactive sputtering in cluster tools for semiconductors and MEMs applications. In this presentation, a new method of generating an arc free discharge for reactive HIPIMS using the new Cyprium plasma generator from Zpulser LLC will be introduced. Data (or evidence) will be presented showing that arc formation in reactive HIPIMS can be controlled without applying a positive voltage pulse between high power pulses. Arc-free reactive HIPIMS processes for sputtering AlN, TiO2, TiN and Si3N4 on the Applied Materials ENDURA 200 mm cluster tool will be presented. A direct comparison of the properties of films sputtered with the Advanced Energy Pinnacle Plus + plasma generator and the Zpulser Cyprium plasma generator will be presented.

• 한국환경과학회지
• /
• 제27권8호
• /
• pp.621-629
• /
• 2018

Many chemically active species such as ${\cdot}H$, ${\cdot}OH$, $O_3$, $H_2O_2$, hydrated $e^-$, as well as ultraviolet rays, are produced by Dielectric Barrier Discharge (DBD) plasma in water and are widely use to remove non-biodegradable materials and deactivate microorganisms. As the plasma gas containing chemically active species that is generated from the plasma reaction has a short lifetime and low solubility in water, increasing the dissolution rate of this gas is an important challenge. To this end, the plasma gas and water within reactor were mixed using the air-automizing nozzle, and then, water-gas mixture was injected into water. The dissolving effect of plasma gas was indirectly confirmed by measuring the RNO (N-Dimethyl-4-nitrosoaniline, indicator of the formation of OH radical) solution. The plasma system consisted of an oxygen generator, a high-voltage power supply, a plasma generator and a liquid-gas mixing reactor. Experiments were conducted to examine the effects of location of air-automizing nozzle, flow rate of plasma gas, water circulation rate, and high-voltage on RNO degradation. The experimental results showed that the RNO removal efficiency of the air-automizing nozzle is 29.8% higher than the conventional diffuser. The nozzle position from water surface was not considered to be a major factor in the design and operation of the plasma reactor. The plasma gas flow rate and water circulation rate with the highest RNO removal rate were 3.5 L/min and 1.5 L/min, respectively. The ratio of the plasma gas flow rate to the water circulation rate for obtaining an RNO removal rate of over 95% was 1.67 ~ 4.00.

• 한국표면공학회지
• /
• 제38권2호
• /
• pp.73-78
• /
• 2005

A real-time monitoring of ICP(inductively coupled plasma) assisted magnetron sputtering of MgO was carried out using a QMS(quadrupole mass spectrometer), an OES(optical emission spectrometer), and a digital oscilloscope with a high voltage probe and a current monitor. At the time of ICP ignition, the most distinct impurity was OH emission (308.9 nm) which was dissociated from water molecules. For reactive deposition oxygen was added to Ar and the OH emission intensity was reduced abruptly When the discharge voltage was regulated by a PID controller from 240V(metallic mode) to 120V(oxide mode), the emission intensity from Mg (285.2 nm) changed proportionally to the discharge voltage, but the intensity of Ar I(811.6 nm) was constant. At 100V of discharge voltage, Mg sputtering was almost stopped. Emissions from Ar I(420.1 nm) and Mg I were dropped down to 1/10, but Ar I(811.6 nm) didn't change. And the emission from atomic oxygen (O I, 777.3 nm) was increased to 10 times. These results are compatible with those from QMS study.

• Journal of Korean Society for Atmospheric Environment
• /
• 제21권E2호
• /
• pp.57-65
• /
• 2005

An experimental study was performed on the decomposition of gaseous ammonia and two selected volatile organic compounds (VOCs: toluene and acetone) in a combined nonthermal plasma reactor with corona and glow discharges. A lab pilot scale reactor (206 liter) equipped with a high electric power pack was used to determine the decomposition efficiency in relation with the inlet concentration and applied voltage. Three different types of discharging electrode such as wired rack, wire strings for corona discharge, and thin plate for glow discharge were put in order in the reactor. While decomposition of ammonia decreased with an increase in the initial concentration, acetone showed an opposite result. In the case of toluene however no explicit tendency was found in toluene and aceton. Negative discharge resulted in high decomposition efficiency than the positive one for all gases. A better removal of gas phase element could be achieved when fume dust were present simultaneously.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.795-798
• /
• 2008

The discharge characteristics of a flat plasma backlight with long electrode gap are investigated. The effect of operating voltage and repetition rate on brightness and luminance efficiency is investigated. A new high efficacy mode is found at low frequencies around 15-40 KHz; a lumen efficacy of 15.3 lm/W is achieved at a luminance of $2400\;cd/m^2$. In the high brightness mode, present at high voltage, we find a maximum luminance of $5900\;cd/m^2$ at 30KHz.

• 한국전기전자재료학회논문지
• /
• 제32권4호
• /
• pp.320-326
• /
• 2019

Recently, the application of atmospheric plasma technology in air filtration is increasing. Sterilization by an atmospheric plasma device is very effective. However, ozone gas, which is generated during atmospheric plasma formation, poses a hazard to human health. To reduce the ozone gas during plasma discharge, we fabricated a one-plate hybrid plasma discharge device with a heating element, which can decompose ozone gas effectively by a simple heating action. In this study, we evaluated the plasma discharge characteristics and ozone concentrations with various Ar flow rates and temperatures. With increasing Ar gas flow rate, the ozone concentration and spectrum intensity increased till an Ar gas flow rate of 60 sccm, and decreased thereafter. When discharged in high temperature, the ozone concentration and spectrum intensity decreased. Further, to evaluate the state of the treated surface under various plasma discharge and heating conditions, we measured the variation in the contact angles on the surface. Regardless of the temperature, the contact angle increased with increasing discharge voltage. However, the contact angle increased when discharged at high temperature.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
• /
• pp.809-812
• /
• 2008

Structural parameter variation effects (changing the coplanar gap under different discharge dimensions) and use of complex gas mixtures (He, Ne, Ar and Xe) in mercury-free fluorescent lamps are studied in this paper. Pure Neon gas is the best buffer gas for obtaining high luminous efficiency in mercury-free fluorescent lamps. It is shown that with a shorter coplanar gap (30mm), a high luminous efficiency can be obtained at low operating voltage, as well as high luminance uniformity and stable discharge with a Ne-Xe 20% gas mixture.