• Title/Summary/Keyword: high transmittance

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Optimization of Transflective PVA Cell Structure for High Resolution Display

  • Baek, Jong-In;Park, Sung-Jin;Jhun, Chul-Gyu;Kim, Jae-Chang;Yoon, Tae-Hoon
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07a
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    • pp.403-406
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    • 2005
  • We optimized a patterned-vertical-alignment (PVA) transflective liquid-crystal (LC) cell for small pixel application. To achieve the high resolution display performance in the mobile communication equipments such as mobile phones, personal data assistants, and tablet personal computers, we optimized the parameters of liquid crystal and the electrode structure. Both the transmittance and the reflectance are maximized at the same time.

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Current Status of Quartz Glass for Semiconductor Process (반도체 공정용 석영유리 현황)

  • Kim, Hyeong-Jun
    • Ceramist
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    • v.22 no.4
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    • pp.429-451
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    • 2019
  • Quartz glass is a key material for making semiconductor process components because of its purity, low thermal expansion, high UV transmittance and relatively low cost. Domestic quartz glass has a market worth about 500 billion won in 2018, and the market power of Japanese materials is very high. Quartz glass for semiconductor process can be divided into general process and exposure. For general process, molten quartz glass is mainly used, but synthetic quartz glass with higher purity is preferred. Synthetic quartz glass is used as the photomask for the exposure process. Recently, as semiconductors started the sub-nm process, the transition from the transmission type using ArF ultraviolet (194 nm) to the reflection type using EUV ultraviolet (13.5 nm) began. Therefore, the characteristics required for the synthetic quartz glass substrates used so far are also rapidly changing. This article summarizes the current technical trends of quartz glass and recent technical issues. Lastly, the present situation and development possibility of quartz glass technology in Korea were diagnosed.

A Study of viewing angle characteristics of the film compensated TN mode

  • Park, Chi-Hyuck;Kim, Eui-Man;Lee, Jang-Ho;Park, Cheol-Woo;Lee, Kyung-Ho
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1462-1465
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    • 2009
  • Because of its weak points that narrow viewing angle and grayscale inversion, 'bare' twisted nematic (TN) LCD has some limits to use as a display device, though its great strong points that low cost, high yield, simple design, high transmittance and normally white. The 'WideView(WV)' film which introduced by Fuji co., has been good solution to extend the viewing angles of TN mode, therefore that film have been used generally for TN panels needed wide viewing angle. This paper introduce the research to find the parameters of the Wide view film and a TN panel which affect viewing angle characteristics and how to adjust those parameters.

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Enhanced Properties of IZO Thin Film Prepared by Nano-Powder Target

  • Ji, Seung-Hun;Youn, Hyun-Oh;Seo, Sung-Bo;Kim, Mi-Sun;Sohn, Sun-Young;Kim, Jong-Jae;Kim, Hwa-Min
    • 한국정보디스플레이학회:학술대회논문집
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    • 2009.10a
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    • pp.1428-1429
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    • 2009
  • Compared to the indium zinc oxide (IZO) film fabricated by micro-powder target, the IZO film with nano-powder target exhibited improved optoelectronic properties of wide bandgap, high transmittance, surface uniformity, and low sheet resistance due to the high film density.

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Positive Type Photoresist for Patterning of Interdielectric Layer of TFT Array

  • Lee, Hyo-Jung;Kim, Hyo-Jin;Kim, Soon-Hak;Park, Lee-Soon;Lee, Yun-Su;Song, Gab-Deuk
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.564-566
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    • 2007
  • Synthesis of two photoactive compounds containing core imide moiety was carried out for an application to interdielectric layer in TFTLCD array. An aqueous alkaline developable polymer matrix was synthesized by free radical copolymerization. A positive photoresist formulation was developed utilizing synthesized UV monomers, photoactive compound, binder polymer, sulfactant and alkali developable polymer matrix. It was found that via-holes with good resolution, high transmittance and thermal resistance could be obtained by photolithographic process utilizing the new positive interdielectric material with high thermal stability.

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A study on efficiency improvement of poly-Si solar cell using a selective etching along the grain boundaries (결정입계 선택적 식각 기법을 적용한 다결정 규소 태양전지의 효율 향상에 관한 연구)

  • 임동건;이수은;박성현;이준신
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.597-600
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    • 1999
  • A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

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SINGLE CRYSTAL GROWTH OF OPTIC-GRADE LiNbO3 USING A FLOATING ZONE TECHNIQUE

  • Han, Ji-Woong;Kyung Joo;Shin, Kwang-Bo;Auh, Keun-Ho
    • Proceedings of the Korea Association of Crystal Growth Conference
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    • 1998.09a
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    • pp.43-46
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    • 1998
  • The effect of dopant and stoichiometry on the optical properties of LiNbO3 were studies. We prepared three samples, which are undoped, MgO doped LiNbO3 and near-stoichiometric LiNbO3 dielectric constant and transmittance in UV/VIS/IR light range were measured. The results showed that the features for high [Li]/[Nb] were similar to those for low [Li]/[Nb] but with high [Mg].

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Electromagnetic Wave Propagation in Anisotropic Composite Structures (이방성 복합재료의 전자기파 투과특성)

  • 전흥재;신현수
    • Proceedings of the Computational Structural Engineering Institute Conference
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    • 2002.04a
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    • pp.407-414
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    • 2002
  • The knowledge of interaction of electromagnetic waves in composite structures is important for designing the shielding structure for antenna such as radome. Recently, radomes are constructed in the form of foam core sandwich structures that have many mechanical advantages such as high strength, long fatigue life, low density and adaptability to the intended function of structure. However, the propagation of electromagnetic waves is affected by high anisotropic permeability and loss tangent of the composite skin. In this study, the analytical model to understand the propagation of electromagnetic waves in the anisotropic composites and foam core sandwich structures with composite skins was proposed. Numerical analyses of unidirectional composites and foam core sandwich structure as a function of incident angle were performed. From the results of analysis, the general tendencies of transmittance of electromagnetic wave through composites and foam core sandwich structure were obtained.

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Authentic-color Characteristic of the Fringe-field Switching Mode using a Liquid Crystal with Negative Dielectric Anisotropy (유전율 이방성이 음인 액정을 이용한 Fringe-field Switching Mode의 Authentic-color 특성)

  • Song, Je-Hoon;Choi, Yoon-Seok;Moon, Dae-Gyu;Han, Jeong-In;Lee, Seung-Hee
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.17 no.6
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    • pp.633-640
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    • 2004
  • We have studied color tracking of a fringe-field driven homogenously aligned nematic liquid crystal (LC) cell with negative dielectric anisotropy and compared it with other devices such as the twisted nematic(TN) and in-plane switching(IPS) modes. According to studies, the TN device shows bluish color at grey scale and even at a low retardation cell it cannot avoid color tracking. The authentic IPS device having cell retardation value of 0.23 ${\mu}{\textrm}{m}$ also shows bluish white color. However, the FFS device shows excellent color tracking characteristics even at high retardation value of the cell while keeping high transmittance and greenish white.

Properties of ZnO:Ga Thin Films Deposited by RF Magnetron Sputtering with Ar Gas Flows (RF 마그네트론 스퍼터링법으로 제조한 GZO 박막의 Ar 유량에 따른 특성)

  • Kim, Deok Kyu
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.6
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    • pp.450-453
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    • 2020
  • In this study, ZnO:Ga thin films were fabricated on a glass substrate using various Ar flows by an RF magnetron sputter system at room temperature. The dependencies of Ar flow on different properties were investigated. An appropriate control over the Ar flow led to the formation of a high-quality thin film. The ZnO:Ga films were formed as a hexagonal wurtzite structure with high (002) preferential orientation. The films exhibited a typical columnar microstructure and a smooth top face. The average transmittance was 85~89% within the visible area. By decreasing the Ar flow, the sheet resistance was decreased due to an increase in the grain size and a decrease in the root mean square roughness. The lowest sheet resistance of 86 Ω/□ was obtained at room temperature for the 40 sccm Ar flow.