• Journal of Magnetics
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• v.7 no.3
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• pp.63-71
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• 2002

Three fabrication techniques for forming thin barrier layer with uniform thickness and large barrier height in magnetic tunnel junction (MTJ) are discussed. First, the effect of immiscible element addition to Cu layer, a high conducting layer generally placed under the MTJ, is investigated in order to reduce the surface roughness of the bottom ferromagnetic layer, on which the barrier is formed. The Ag addition to the Cu layer successfully realizes the smooth surface of the ferromagnetic layer because of the suppression of the grain growth of Cu. Second, a new plasma source, characterized as low electron energy of 1 eV and high density of $10^{12}$ $cm^{-3}$, is introduced to the Al oxidation process in MTJ fabrication in order to reduce damages to the barrier layer by the ion-bombardment. The magnetotransport properties of the MTJs are investigated as a function of the annealing temperature. As a peculiar feature, the monotonous decrease of resistance area product (RA) is observed with increasing the annealing temperature. The decrease of the RA is due to the decrease of the effective barrier width. Third, the influence of the mixed inert gas species for plasma oxidization process of metallic Al layer on the tunnel magnetoresistance (TMR) was investigated. By the use of Kr-O$_2$ plasma for Al oxidation process, a 58.8 % of MR ratio was obtained at room temperature after annealing the junction at $300{^{\circ}C}$, while the achieved TMR ratio of the MTJ fabricated with usual Ar-$0_2$ plasma remained 48.4%. A faster oxidization rate of the Al layer by using Kr-O$_2$ plasma is a possible cause to prevent the over oxidization of Al layer and to realize a large magnetoresistance.

• Journal of the Korean Magnetics Society
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• v.6 no.3
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• pp.189-193
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• 1996

Magnetoresistance field sensitivity and magnetostriction were measured as a function of annealing temperature for NiFe/Ag multilayer systems displaying giant magnetoresistance. Key multilayer configurations such as number of NiFe/Ag bilayers and Ag spacer thickness were varied. A high giant magnetoresistance ratio up to 5% with zero magnetostriction and high magnetoresistance field sensitivity was possible to achieve simultaneously with optimal sample geometry and annealing condition.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.237-241
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• 2009

Dislocation dipoles were formed in the early stage of deformation of Y-CSZ single crystal at high temperatures. And the dipoles were pinched off to break into dipoles loops by dislocation climb. Dislocation loop annealing was peformed in Y-CSZ single crystal to evaluate the diffusivity of cation which was the rate-controlling ion.

• Progress in Superconductivity and Cryogenics
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• v.8 no.3
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• pp.5-8
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• 2006

The effect of annealing time in Metal Organic Deposition(MOD) method was investigated at reduced total pressure. As the total annealing pressure was reduced, the growth rate of YBCO films increased from 0.14nm/sec at atmospheric pressure to 4.2nm/sec at 1 Torr. For the total pres sure of 700, 500, 300, 100, and 1 Torr, the optimal annealing times of 60, 40, 20, 10, 2minutes were found in our experimental conditions. When the an nealing time was short, poor crystallinity or un-reacted phase was obtained. Also, the degradation of YBCO films occurred when exposed longer to the humid ambient at the high annealing temperature. The reduced pressure was found effective to in crease the growth rate and to control the pore size of the YBCO films in MOD method. A fast growth of MOD-YBCO films was realized with high critical current density over $1MA/cm^2$ using reduced pressure annealing. Large pores, usually observed at atmospheric pressure in MOD method, disappeared and also, the number of pores was reduced.

• Proceedings of the Materials Research Society of Korea Conference
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• 2002.05a
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• pp.127-127
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• 2002

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.289.2-289.2
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• 2016

In-Ga-Zn-O(IGZO) receive great attention as a channel material for thin film transistors(TFTs) as next-generation display panel backplanes due to its superior electrical and physical properties such as a high mobility, low off-current, high sub-threshold slope, flexibility, and optical transparency. For the purpose of fabricating high performance IGZO TFTs, a thermal recovery process above a temperature of $300^{\circ}C$ is required for recovery or rearrangement of the ionic bonding structure. However diffused metal atoms from source/drain(S/D) electrodes increase the channel conductivity through the oxidation of diffused atoms and reduction of $In_2O_3$ during the thermal recovery process. Threshold voltage ($V_{TH}$) shift, one of the electrical instability, restricts actual applications of IGZO TFTs. Therefore, additional investigation of the electrical stability of IGZO TFTs is required. In this paper, we demonstrate the effect of Ti diffusion and modulation of interface traps by carrying out an annealing process on IGZO. In order to investigate the effect of diffused Ti atoms from the S/D electrode, we use secondary ion mass spectroscopy (SIMS), X-ray photoelectron spectroscopy, HSC chemistry simulation, and electrical measurements. By thermal annealing process, we demonstrate VTH shift as a function of the channel length and the gate stress. Furthermore, we enhance the electrical stability of the IGZO TFTs through a second thermal annealing process performed at temperature $50^{\circ}C$ lower than the first annealing step to diffuse Ti atoms in the lateral direction with minimal effects on the channel conductivity.

• Transactions on Electrical and Electronic Materials
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• v.8 no.4
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• pp.161-165
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• 2007

In this work, Ni thin films with different thickness from $1,523{\AA}\;to\;9,827{\AA}$ were deposited for the application of micro thermal flow sensors by a magnetron sputtering and oxidized through annealing at $450^{\circ}C$ with increasing annealing time. The initial variation of resistivity decreased radically with increasing films thickness, then gradually stabilizes as the thickness increases. The resistivity of Ni thin films with $3,075{\AA}$ increased suddenly with increasing annealing time at $450{\circ}C$, then gradually stabilizes as the thickness increases after the annealing time 9 h. In case of $3,075{\AA}\;and\;9,827{\AA}$ films, the average of TCR values, measured for the operating temperature range of $0^{\circ}C\;to\;180^{\circ}C$, were $2,413.1ppm/^{\circ}C\;and\;4,438.5ppm/^{\circ}C$, respectively. Because of their high resistivity and very linear TCR, Ni oxide thin films are superior to pure Ni and Pt thin films for flow and temperature sensor applications.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.154-155
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• 2005

Multi-layer film of $MgO/(FePt-B)_{50nm}/ MgO$ was deposited on Si(100) substrates by RF magnetron sputtering. The boron chips were uniformly placed oil tile FePt target. The boron content of thin film was found to be about 5, 10, 15, 25 and $33 at\%$ by using a CAMECA SX-51 wavelength dispersive spectroscopy (WDX). It is observed that X-ray diffraction patterns of FePt-B film by post-annealing exhibited a transformation from disordered fcc structure to ordered $Ll_0$ phase with fct structure from around $400^{\circ}C$. By adding B, annealing temperature for ordering is about $200^{\circ}C$ lower than that of pure FePt. This remarkable decrease of the annealing temperature is closely related to the high diffusivities of Fe and Pt associated with the defects caused by movements of B atoms. The maximum coercivity(Hc) for FePt films was found to be ${\~}$13 kOe after annealing at $600^{\circ}C$ for 1hr.

• Journal of the Korean Society for Heat Treatment
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• v.10 no.1
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• pp.1-9
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• 1997

The variation of the mechanical properties and the formation of retained austenite with heat treatment conditions in austempered Si bearing carbon steels has been investigated. In the case of a steel containing 0.35C-1.48Si-0.95Mn, it has been found that a feather shape bainite structure of lath are obtained under a isothermal treated condition at just below the Ms temperature, and the martensite, bainitic ferrite and retained austenite of second phase particles on the ferrite matrix for a isothermal treated steels after intercritical annealing are precipitated in a linked shape. The retained austenite with $2{\mu}m$ size induced as TRIP is found to increase with increasing the formation rate of retained austenite for the intercritical annealing and high Si containing steels. The tensile strength is increased as austempering temperature increases in all isothermal treatment temperature, whereas the elongation is shown to roughly decrease as the tensile strength increases. The values of tensile strength-elongation balance have showed a marked dependence upon the elongation rather than the tensile stregth, and their values are increased for high Si containing steels and intercritical annealing condition. The most optimum result has been shown to be the tensile stregth-elongation balance of $2882.4kgf/mm^2.%$ and the elongation of 33.3% for a "B" steel in the heat treating temperature range of $780{\sim}370^{\circ}C$.

• Journal of Power System Engineering
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• v.16 no.4
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• pp.60-65
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• 2012

This study was carried out to investigate the effect of reverse transformation on the damping capacity in high manganese austenitic stainless steel. ${\alpha}^{\prime}$-martensite was formed with the specific direction and surface relief by deformation. Over 95% of the austenite phase was transformed to deformation-induced ${\alpha}^{\prime}$-martensite by 70% cold rolling. Reverse transformation became rapid above an annealing temperature of $550^{\circ}C$, but there was no significant transformation above $700^{\circ}C$. In addition, with increasing annealing time at $700^{\circ}C$, reverse transformation was induced rapidly, but the transformation was almost completed at 10 min. Damping capacity was increased up to $700^{\circ}C$, and than unchanged with the increasing annealing temperature. Damping capacity increased steeply with an increasing reverse treatment time up to 10min, whereas there were no significant change with a treatment time of more than 10 min. Damping capacity increased with an increasing the reversed austenite and was strongly affected by reversed austenite.