• Bulletin of the Korean Chemical Society
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• v.33 no.12
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• pp.3977-3980
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• 2012

Nanostructured thermoelectric bismuth telluride ($Bi_2Te_3$) powders with various morphologies, such as nanoplates, nanorods, and nanotubes, were prepared by a hydrothermal method based on the reaction between $BiCl_3$, Te, and sodium ethylenediaminetetraacetate ($Na_2$-EDTA) at 150, 180, and $210^{\circ}C$. The products were characterized by X-ray diffraction (XRD), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and selected area electron diffraction (SAED). The effect of reaction temperature on the morphology of the $Bi_2Te_3$ particles was investigated, and the possible mechanism of morphology control was proposed.

• Korean Journal of Crystallography
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• v.6 no.2
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• pp.69-74
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• 1995

GaAs tilt grain boundaries were propared by growing GaAs epilayers on Ge bicrystals by an organometallic vapor phase epitaxy (OMVPE) method ∑ =9 tilt grain boundaries were produced when two different first-order twin boundaries interacted with one another in GaAs epilayers. Structural investigations were performed for the coherent and second-order twin boundaries of GaAs by high-resolution transmission electron microscopy (HRTEM). Polarities of cross-boundary bondings were determined from the high-order Laue zone (HOLZ) lines in the (200) convergent beam disks : these were recorded from the two grains on either side of the boundaries, respectively, at particular diffraction conditions.

• Journal of the Microelectronics and Packaging Society
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• v.16 no.2
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• pp.27-31
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• 2009

Sn whiskers can grow from the pure Sn and high Sn-based finish and cause the electrical shorts and failures. Even with the wealth of information on whiskers, we have neither the clear understanding of whisker growth nor methods for its prevention. In this study, the whisker grain roots which connected with intermetallic layer were analyzed by high-resolution transmission electron microscopy (HR-TEM). In the Sn-Cu plated leadframe (LF) that was stored at ambient condition for 540 days, filament-shaped whiskers were grown on the Sn-plated surface and ${\eta}'-Cu_6Sn_5$ precipitates were widely distributed along the grain boundaries at the Sn matrix. The measured of the lattice fringes at the ${\eta}'-Cu_6Sn_5$ was $4.71{\AA}$ at the coarse grain and $2.91{\AA}$ at the fine grain. The $Cu_3Sn$ which generates the tensile stresses was not observed. The formation of $Cu_6Sn_5$ precipitates and intermetallic layer were strongly related to whisker growth, but, the whisker growth tendency does not closely relate with the geometric morphology of irregularly grown intermetallic compound (lMC).

• Bulletin of the Korean Chemical Society
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• v.30 no.11
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• pp.2669-2674
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• 2009

Controlled reduction of silver alkylcarbamate complexes with hydrogen gas was investigated as a facile synthetic method for high concentrations of silver nanocolloids in organic solvent. Polyvinylpyrrolidone (PVP) was used to stabilize the silver colloids obtained from the chemical reduction. To determine optimum conditions for preparation of the stable and controlled silver colloids with the narrowest particle size and distribution, a large number of experiments were carried out involving variations in the concentrations of the silver 2-ethylhexylcarbamate (Ag-EHCB) complex, PVP, and 2-propanol. The initial colloid had a mean particle diameter between 5$\sim$50 nm, as measured by transmission electron microscopy, and exhibited a sharp absorption band in the UV region with a maximum size near 420 nm. After treatment with a reducing agent, the colloids were characterized by ultraviolet-visible spectroscopy, X-ray diffraction, and high-resolution transmission electron microscopy.

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.11a
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• pp.17.1-17.1
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• 2006

• Proceedings of the Materials Research Society of Korea Conference
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• 2006.05a
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• pp.22.2-22.2
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• 2006

• Polymer Science and Technology
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• v.25 no.3
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• pp.239-243
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• 2014

• Applied Microscopy
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• v.36 no.spc1
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• pp.41-46
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• 2006

Interfacial atomic structure (chemical structure) of a Pd/ZnO hetero junction was investigated by atomic resolution high voltage transmission electron microscopy (ARHVTEM). A misfit dislocation did not work as a stress accommodation mechanism in the ZnO(0001)/Pd (111) interface. But the periodic stress localization occurred in the ZnO($10\bar{1}0$)/(200) interface. The periodicity of the local strain coincided with that of misfit dislocation. Atomic structure image of the ARHVTEM showed that an atomic arrangement across the interface was in the order of O-Zn-Pd. It was shown that mechanical weakness of the ZnO(0001)/Pd(111) interface against cyclic heating is attributable to the absence of the periodic stress localization of the misfit dislocation.

• Korean Journal of Materials Research
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• v.28 no.10
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• pp.595-600
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• 2018

This study investigates the microstructural properties of CoCrFeMnNi high entropy alloy (HEA) oxynitride thin film. The HEA oxynitride thin film is grown by the magnetron sputtering method using nitrogen and oxygen gases. The grown CoCrFeMnNi HEA film shows a microstructure with nanocrystalline regions of 5~20 nm in the amorphous region, which is confirmed by high-resolution transmission electron microscopy (HR-TEM). From the TEM electron diffraction pattern analysis crystal structure is determined to be a face centered cubic (FCC) structure with a lattice constant of 0.491 nm, which is larger than that of CoCrFeMnNi HEA. The HEA oxynitride film shows a single phase in which constituting elements are distributed homogeneously as confirmed by element mapping using a Cs-corrected scanning TEM (STEM). Mechanical properties of the CoCrFeMnNi HEA oxynitride thin film are addressed by a nano indentation method, and a hardness of 8.13 GPa and a Young's modulus of 157.3 GPa are obtained. The observed high hardness value is thought to be the result of hardening due to the nanocrystalline microstructure.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.239.2-239.2
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• 2015

Graphene is a most interesting material due to its unique and outstanding properties. However, semi-metallic properties of graphene along with zero bandgap energy structure limit further application to optoelectronic devices. Recently, many researchers have shown that band gap can be induced in the Bernal stacked bilayer graphene. Several methods have been used for the controlled growth of the Bernal staked bilayer graphene, but it is still challenging to control the growth process. In this paper, we synthesize the large area Bernal stacked bilayer graphene using multi heating zone low pressure chemical vapor deposition (LPCVD). The synthesized bilayer graphenes are characterized by Raman spectroscopy, optical microscope (OM), scanning electron microscopy (SEM). High resolution transmission electron microscopy (HRTEM) is used for the observation of atomic resolution image of the graphene layers.